Abstract: A light emitting module with improved optical functionality and reduced thermal resistance is described, which comprises a light emitting device (LED), a wavelength converting (WC) element and an inorganic optically-transmissive thermally-conductive (OTTC) element. The WC element is capable of absorbing light generated from the LED at a specific wavelength and re-emitting light having a different wavelength. The re-emitted light and any unabsorbed light exits through at least one surface of the module. The OTTC is in physical contact with the WC element and at least partially located in the optical path of the light. The OTTC comprises one or more layers of inorganic material having a thermal conductivity greater than that of the WC element. As such, a compact unitary integrated module is provided with excellent thermal characteristics, which may be further enhanced when the OTTC provides a thermal barrier for vertical heat propagation through the module but not lateral propagation.

Abstract: An LED package includes a substrate having an electrically conductive portion and an electrically non-conductive portion composed of an oxide of the conductive portion; an LED mounted on the conductive portion and electrically connected to the conductive portion; a first electrode disposed on the non-conductive portion and electrically connected to the LED by a wire; and a second electrode disposed on the substrate and electrically connected to the LED.

Abstract: A circuit board for a light emitting diode package improved in heat radiation efficiency and a manufacturing method thereof. In a simple manufacturing process, insulating layers are formed by anodizing on a portion of a thermally conductive board body and plated with a conductive material. In the light emitting diode package, a board body is made of a thermally conductive metal. Insulating oxidation layers are formed at a pair of opposing edges of the board body. First conductive patterns are formed on the insulating oxidation layers, respectively. Also, second conductive patterns are formed in contact with the board body at a predetermined distance from the first conductive patterns, respectively. The light emitting diode package ensures heat generated from the light emitting diode to radiate faster and more effectively. Additionally, the insulating layers are formed integral with the board body by anodizing, thus enhancing productivity and durance.

Abstract: The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.

Abstract: A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract: A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Abstract: A high power Light Emitting Diode (LED) package and a method of producing the same. The high power LED package according to the present invention includes a plurality of light emitting diode chips, a first lead frame with the light emitting diode chips mounted thereon, and a second lead frame disposed at a predetermined interval from the first lead frame. The LED package also includes a package body fixing the first and second lead frames and bonding wires for electrically connecting the plurality of LED chips with upward-inclined inner side walls thereof and a second reflecting part surrounding the entire plurality of LED chips with an upward-inclined inner side wall thereof.

Abstract: A lighting system has an array (100) of at least one light-emitting solid-state element such as a light-emitting diode (LED) or a laser diode. A voltage source (10), which may supply either alternating or direct current, energizes the array. Array state circuitry (125; Q2, R2), electrically connected in series with the array (100), senses at least one state of the array, such as the amount of current passing through the array, or temperature. Secondary circuitry (127; R1, Q1; 200, 201, 202; 200, R4, Q1; 126, 127) is connected in parallel with the array (100). A switching component (Q1; Q1, Q3; 202) adjusts the current passing through the secondary circuitry in accordance with the sensed state of the array such that current through the array is maintained substantially constant.

Abstract: The invention relates to a method of forming a phosphor film and a method of manufacturing an LED package incorporating the same. The method of forming a phosphor film includes mixing phosphor and light-transmitting beads in an aqueous solvent such that the nano-sized light-transmitting beads having a first charge are adsorbed onto surfaces of phosphor particles having a second charge. The method also includes coating a phosphor mixture obtained from the mixing step on an area where the phosphor film is to be formed, and drying the coated phosphor mixture to form the phosphor film. The invention further provides a method of manufacturing an LED package incorporating the method of forming the phosphor film.

Abstract: A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

Abstract: Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

Abstract: Septic barriers interposed between a target tissue such as an oral or vaginal cavity, exposed epidermis, or wound or surgical site, and a user and his/her optical interrogation instruments to reduce cross-infection and/or contamination. In certain embodiments, the septic barrier is substantially transparent for viewing purposes and is typically effectively non-fluorescent, particularly when used for investigating autofluorescence or other fluorescence emanating from a target, so as to have little or no effect on the measurements and observations being made. The sepsis barrier can comprises a window through which the user sees the tissue, a frame holding the window, and an attachment structure, such as threads or bayonet attachment, configured to connect the barrier to the instrument. If desired, the system can also have an optional attachment mechanism for permanent or temporary connection of a further instrument to the frame, such as a tissue retractor configured to aid manipulation of the target tissue.

Abstract: A chip coated LED package and a manufacturing method thereof. The chip coated LED package includes a light emitting chip composed of a chip die-attached on a submount and a resin layer uniformly covering an outer surface of the chip die. The chip coated LED package also includes an electrode part electrically connected by metal wires with at least one bump ball exposed through an upper surface of the resin layer. The chip coated LED package further includes a package body having the electrode part and the light emitting chip mounted thereon. The invention improves light efficiency by preventing difference in color temperature according to irradiation angles, increases a yield, miniaturizes the package, and accommodates mass production.

Abstract: Lighting devices that comprise a light source and a reflector, the reflector comprising first, second and third reflector regions. In some devices, a first portion of light is reflected by the first region and then by the third reflector region, a second portion of light is reflected by the second region and forms a primary beam, and at least 5% of the first portion of light that is reflected by the third region is within the primary beam of light. In some devices, at least 5% of all light reflected by the first reflector region travels from the first reflector region directly to the third reflector region. In some devices, at least 5% of all light reflected by the third reflector region traveled directly from the first reflector region to the third reflector region. In some devices, the reflector comprises means for providing the features described above.

Abstract: A lighting device comprising a first group of solid state light emitters, an element containing luminescent material and a second group of solid state light emitters spaced from the element. In some embodiments, (1) at least 50% of light emitted by one of the first group does not mix with light emitted by the second group before the light emitted by the second group has entered the element, (2) at least 90% of exiting light emitted by the second group travels farther within the lighting device than 90% of exiting light emitted by the first group, (3) an average distance traveled by exiting light emitted by the second group is farther than an average distance traveled by exiting light emitted by the second group, and/or (4) light emitted by the first group directly exiting the lighting device exits the lighting device without being incident upon the element.

Abstract: The invention provides a high quality composite phosphor powder which ensures diversity in emission spectrum, color reproduction index, color temperature and color, a light emitting device using the same and a method for manufacturing the composite phosphor powder. The composite phosphor powder comprises composite particles. Each of the composite particles includes at least two types of phosphor particles and a light transmitting binder. The phosphor particles have different emission spectrums. In addition, the light transmitting binder is formed between the phosphor particles and binds them together.