Abstract: A high intensity LED based lighting array for use in an obstruction light with efficient uniform light output is disclosed. The high intensity LED based lighting array has a first concentric ring having a plurality of reflectors and light emitting diodes. The concentric ring has a planar surface mounting each of the plurality of reflectors in perpendicular relation to a respective one of the plurality of light emitting diodes. At least some of the first plurality of reflectors are adjustable relative to the position of the respective light emitting diode to produce a precise beam pattern from the light emitting diode.

Abstract: An LED backlight unit has a substrate, a plurality of light emitting diodes disposed on the substrate, and a light guide plate is placed adjacent to the light source. A chassis fixes the light source and the light guide plate therein. Fixing means engagingly fit a side of the light guide plate into the light source plate and chassis with the substrate of the light source is fixed in surface contact with the chassis. The light guide plate is assemblable without a thermosetting adhesive.

Abstract: There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

Abstract: A light emitting device comprises a novel low-loss array of conductive vias embedded in a dielectric multilayer stack, to act as an electrically-conductive, low-loss, high-reflectivity reflector layer (CVMR). In one example the CVMR stack is employed between a reflective metal bottom contact and a p-GaN semiconductor flip chip layer. The CVMR stack comprises at least (3) layers with at least (2) differing dielectric constants. The conductive vias are arranged such that localised and propagating surface plasmons associated with the structure reside within the electromagnetic stopband of the CVMR stack, which in turn inhibits trapped LED modes coupling into these plasmonic modes, thereby increasing the overall reflectivity of the CVM R. This technique improves optical light extraction and provides a vertical conduction path for optimal current spreading in a semiconductor light emitting device. A light emitting module and method of manufacture are also described.

Abstract: Provided is a backlight unit of an LCD device including a printed circuit board; a plurality of light emitting diodes (LEDs) mounted on the printed circuit board; and a bottom chassis formed with only an outer frame and having the printed circuit board housed thereon.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.

Abstract: A coupler for coupling a light source to a fiber optic, comprising an adapter having a cavity for receiving the fiber optic, said adapter including pins extending in a direction perpendicular to the fiber optic's axis; a coupler body having an aperture for receiving the adapter, said aperture including a pair of through slots for receiving the pins, said body including interior pin sockets radially offset from the slots; a plate mounted within the coupler body; and biasing means urging said plate towards the aperture in the coupling body wherein when the adapter is inserted into the aperture of the coupler body, the adapter initially urges the plate in a direction away from the aperture, whereupon the adapter is rotated until the pins become aligned with and captured within the pin sockets allowing the plate to be urged in a direction back towards the aperture locking the coupler in place.

Abstract: A device comprising a plurality of LEDs arranged in a coplanar array, the coplanar array comprising an LED at the center and LEDs positioned radially symmetrically around the LED at the center, and wherein the central axes of the LEDs are arranged to be parallel to each other; a one-piece lens array collimating light from the LEDs, the lens array comprising a plurality of coplanar lens tiles, the coplanar lens tiles comprising a lens tile at the center and lens tiles positioned radially symmetrically around the lens tile at the center, and wherein the central axis of each of the lens tiles is aligned with the central axis of a corresponding LED; and a focusing lens converging the collimated light from the lens array into a single image in a focal plane, wherein the central axis of the focusing lens is aligned with the central axis of the lens array.

Abstract: A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step. The device includes an electrical conducting mirror layer, which reflects at least 60% of generated light incident on it, and an isolation layer having electrical insulating properties and thermal conducting properties. A first electrode, which is not in contact with the main semiconductor layers of the device, is located on the mirror layer. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device.

Abstract: The present invention relates to a safety workbench having a working inner chamber enclosed by a housing, whose bottom terminus is formed by a floor trough and which is accessible on a housing front side via a work opening closable using an adjustable front pane. The floor trough is implemented as double-walled and has an internal and an external wall, which enclose an intermediate chamber, which may be placed under vacuum, between them, at least one of the walls having at least one opening which is connected to means for generating the partial vacuum.

Abstract: A lighting device comprising sources of visible light comprising solid state light emitters and/or luminescent materials emitting three or four different hues. A first group of the sources, when illuminated, emit light of two hues which, if combined, would produce illumination having coordinates within an area on a 1931 CIE Chromaticity Diagram defined by points having coordinates: 0.59, 0.24; 0.40, 0.50; 0.24, 0.53; 0.17, 0.25; and 0.30, 0.12. A second group of the sources is of an additional hue. Mixing light from the first and second groups produces illumination within ten MacAdam ellipses of the blackbody locus. Also, a lighting device comprising a white light source having a CRI of 75 or less and at least one solid state light emitters and/or luminescent material. Also, methods of lighting.

Abstract: A light-emitting device including a light source that exhibits polarization anisotropy and a reflector that is shaped so that for light emitted in at least two directions from the light source, the angle between the dominant polarization directions after reflecting from the reflector is smaller than the angle between the dominant polarization directions before reflecting from the reflector. In the light-emitting device the light source may be a light-emitting diode chip or one of a plurality of light sources.

Abstract: There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

Abstract: A lighting device includes: at least one lighting module including a lead frame and a plurality of light emitting diodes packaged on the lead frame; an upper plate disposed on the lead frame, and having at least one perforated region formed with a plurality of through-holes for extension of the light emitting diodes therethrough, and at least two conductor regions respectively provided on two sides of the perforated region, the conductor regions being connected electrically to the lead frame; a heat sink disposed below the lead frame; and a plurality of fasteners fastening the lighting module to the upper plate and the heat sink such that the heat sink is in tight contact with bottom ends of the light emitting diodes.

Abstract: Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

Abstract: A wavelength conversion laser apparatus including: a laser light source emitting primary wavelength light; a non-linear optical crystal including: a light waveguide region having a first refractivity, the light waveguide region receiving the primary wavelength light to output as secondary wavelength light; and a clad region adjacent to the light waveguide region, the clad region having a second refractivity lower than the first refractivity, wherein at least the light waveguide region has a periodically domain-inverted structure formed such that a domain-inverted period varies in a direction perpendicular to an incident axis of the primary wavelength light; and a mover moving the non-linear optical crystal to change the domain-inverted period on a path where the primary wavelength light incident on the light waveguide region passes.

Abstract: A lighting device comprising at least one solid state light emitting light source, a power supply and a housing. The light source(s), and optionally also the power supply, is/are positioned within the housing. The power supply is configured to supply power to the light source(s). The housing comprises at least one substantially transparent light passing structure which comprises at least one thermoplastic material. When power is supplied to the light source, at least a portion of the light emitted by the source light passes through the light passing structure.

Abstract: The present invention relates to a rotor chamber for a centrifuge, in particular an air-cooled laboratory centrifuge, having a chamber wall, comprising an inner side facing toward the chamber interior, the chamber interior being implemented to receive a centrifuge rotor, and an outer side facing away from the chamber interior, and having a sound barrier which is implemented to reduce the sound emitted from the rotor chamber, which comprises a multilayer damping lining. The present invention also relates to a centrifuge having such a rotor chamber, and methods for reducing the sound emanating from the rotor chamber of a centrifuge, in particular an air-cooled laboratory centrifuge.

Abstract: A chemical vapor deposition apparatus includes a substrate ceiling unit forming a reaction chamber to which a reaction gas is supplied to epitaxially grow a substrate, and an exhaust unit separated from the substrate ceiling unit and serving to discharge an exhaust gas after epitaxial growth reaction. The exhaust unit includes a particle formation part to which particles generated in the epitaxial growth of the substrate are attached.