Abstract: Light beams are outputted from optical devices and mixed together to obtain uniform white light free from color stains, thereby achieving a backlight unit improved in light mixing feature. In the backlight unit, a surface light source has a reflecting surface with a plurality of optical devices mounted thereon. An optical sheet is disposed in front of the surface light source. A reflecting layer is disposed between the surface light source and the optical sheet and has reflectivity varied by an incident angle of light beams from the optical devices. The backlight unit enables the light beams from the optical devices to be mixed together. The light beams outputted from the optical devices are effectively mixed together by a reflecting layer having reflectively varied by an incident angle of the light beams from the optical devices, thereby achieving uniform white light without color stains.

Abstract: The invention relates to a side-emitting LED package and a manufacturing method thereof. The side-emitting LED package includes a substrate with an electrode formed thereon, and a light source disposed on the substrate and electrically connected to the electrode. The side-emitting LED package also includes a molded part having an upper surface with a center thereof depressed concavely, covering and protecting the substrate and the light source, and a reflection layer covering an entire upper surface of the molded part to reflect light sideward from the molded part which forms a light transmitting surface. The package is not restricted in the shape of the molded part and is not affected by the LED chip size, enabling a compact structure. The invention can also process a substrate by a PCB process, enabling mass-production.

Abstract: A light emitting device having a plurality of light extracting elements defined on an upper surface of a semiconductor layer of the device, wherein the light extracting elements are adapted to couple light out of the device and to modify the far field emission profile of the device. Each element comprises an elongate region having a length at least twice its width and also greater than the effective dominant wavelength of light generated in the device. The elongate region extends orthogonal to the upper surface but not into the light emitting region of the device and may be oriented at an angle of less than 45° relative to one of a pair of basis axis defining a plane parallel to the semiconductor layer. Each elongate region is spatially separated from neighbouring elongate regions such that it perturbs light generated in the light emitting region independently of the neighbouring regions.

Abstract: A surface light source using LEDs is provided. The surface light source includes a substrate having a plurality of divided regions, a plurality of red, green and blue LEDs arranged on each divided region in a predetermined arrangement structure, and a plurality of LED driving units each having red, green and blue LED driving circuits for respectively driving the red, green and blue LEDs. Identical color LEDs in each divided region are interconnected in series. The series connections of the red, green and blue LEDs in one divided region are respectively connected to the series connections of the red, green and blue LEDs in one or more other divided regions in parallel. The parallel connections of the series connections are connected to corresponding color LED driving circuits.

Abstract: An LED lamp cover structure containing luminescent material, its fabrication methods, and an LED package using the LED lamp cover are disclosed. The LED lamp cover is comprised of a first lens cap providing the outer surface of the lamp cover, a second lens cap providing the inner surface of the lamp cover, and an encapsulating layer sandwiched between the first and second lens caps. The lamp cover of the invention covering a color LED package such as blue color can provide white light output.

Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.

Abstract: The present invention is directed generally to lighting devices, and more particularly to white light LED-based lighting devices configured such that key subassemblies may be replaced, thereby enabling the modification, upgrade and/or repair of said device.

Abstract: A light emitting diode (LED) lamp for street lighting includes: a curved lamp cover; a lamp case coupled to the lamp cover at one open end thereof and having an inner space in which a drive module for driving the lamp and a plurality of LED modules as light sources are mounted; and a reflective plate fastened to the lamp case to reflect light from the LED modules installed in the lamp case, wherein the lamp case is divided into a first housing portion having a hollow space in which the drive module is fixedly installed and a second housing portion in which a mounting member configured to mount the LED modules thereon is installed, and wherein direction adjusting members are respectively inserted between the mounting member and at least one of the LED modules in the second housing portion and each having a lower joining surface and an upper joining surface, the lower joining surface being flat such that the direction adjusting member contacts the mounting member and the upper joining surface being flat such th

Abstract: An LED lamp includes a curved lamp cover, a lamp case coupled to the lamp cover at one open end thereof, and a reflective plate fastened to the lamp case. The lamp case has an inner space in which a drive module for driving the lamp and a plurality of LED modules as light sources are mounted. The lamp case is divided into a first housing portion and a second housing portion. The first housing portion has a hollow space in which the drive module is fixedly installed. A mounting member configured to mount the LED modules thereon is installed in the second housing portion. Each of the LED modules includes a printed circuit board (PCB) substrate attached to the mounting member, a plurality of LED devices mounted on the PCB substrate, a lens seated on the PCB substrate to diffuse light from the LED devices, a spacer ring inserted between the PCB substrate and the lens, and a color film bonded to the lower surface of the lens facing the LED devices to determine the color of light from the LED modules.

Abstract: A light emitting diode (LED) lamp for street lighting is provided. The LED lamp includes a curved lamp cover, a lamp case coupled to the lamp cover at one open end thereof, and a reflective plate fastened to the lamp case. The lamp case has an inner space in which a drive module for driving the lamp and a plurality of LED modules as light sources are mounted. The lamp case is divided into a first housing portion and a second housing portion. The first housing portion has a hollow space in which the drive module is fixedly installed. A channel-shaped mounting member configured to mount the LED modules thereon is installed in the second housing portion. The inner surface of the channel-shaped mounting member has two bends to form a central area and first and second side areas formed at both sides of the central area. The areas of the inner surface of the channel-shaped mounting member disperse light from the LED modules in different directions.

Abstract: There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1?x?yN, where 0<x<1, 0<y<1, and 0<x+y<1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InxGa1?xN, where 0<x<0.2, and GaN; a well layer including InxGa1?xN, where 0<x<1; a third barrier layer including one of InxGa1?xN, where 0<x<0.2 and GaN; and a lattice mismatch relaxation layer including one of AlxInyGa1?x?yN, where 0<x<1, 0<y<1, and 0<x+y<1, AlxGa1?xN, where 0<x<1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.

Abstract: A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0<x<1) and GaN layers, and the composition ratio of aluminum of the AlxGa(1-x)N layers decreases at a predetermined rate away from the active layer.

Abstract: A smart groove seal integrating a communication system within a groove seal used to seal expansion joints and grooves formed in pathways or roadways. One embodiment of the smart groove seal embeds one or more illumination sources that emits visible and/or infrared light into a clear elastomeric expansion joint seal. The communication system includes an expansion joint seal having a selectable array on one or more light sources (such as LEDs and/or OLEDs) positioned within the expansion joint seal, a power supply, and a controller. The smart groove seal enhances the lighting of lanes on vehicular and pedestrian roadways and/or provides vehicular or roadway information to vehicular operators.

Abstract: A light emitting diode bulb includes: a base having a screw-in type electrical connector at a first end of the base; a power converter in the base for converting alternating current voltage into direct current voltage; a plurality of light emitting diode modules stacked on the base, wherein each of the light emitting diode modules have a plurality of side-emitting light emitting diodes; and a cover surrounding the plurality of light emitting diode modules stacked on the base.

Abstract: A light guide plate having a top surface through which light is emitted, a bottom surface opposite to the top surface and a side surface between the top and bottom surfaces, a bottom reflector on the bottom surface for reflecting light at the bottom surface back into the light guide plate, light emitting diodes at the side surface and a side reflector on the side surface for reflecting light at the side surface back into the light guide plate, wherein the side reflector on the side surface has an opening corresponding to at least one of the light emitting diodes

Abstract: An LED package includes a substrate having an electrically conductive portion and an electrically non-conductive portion composed of an oxide of the conductive portion; an LED mounted on the conductive portion and electrically connected to the conductive portion; a first electrode disposed on the non-conductive portion and electrically connected to the LED by a wire; and a second electrode disposed on the substrate and electrically connected to the LED.

Abstract: The present invention is directed generally to lighting devices, and more particularly to white light LED-based lighting devices configured such that key subassemblies may be replaced, thereby enabling the modification and/or repair of said device.

Abstract: The present invention is directed generally to internet-based commerce, and more particularly to a method to real-time track purchase orders and aggregate similar archived purchasing agents inputs and utilize this information to reduce the customer selling price of goods and services.

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract: The present invention provides a light emitting diode (LED) package and the fabrication method thereof. The LED package includes a lower metal layer, and a first silicon layer, a first insulation layer, a second silicon layer, a second insulation layer, and a package electrode pattern formed in their order on the lower metal layer. The LED package also includes a spacer having a cavity, formed on the electrode pattern. The LED package further includes an LED mounted in the cavity by flip-chip bonding to the electrode patterns, and an optical element attached to the upper surface of the spacer.