Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

Abstract: The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.

Abstract: A light emitting diode (LED) package includes a carrier, an LED chip, an encapsulant, a plurality of phosphor particles, and a plurality of anti-humidity particles. The LED chip is disposed on and electrically connected to the carrier. The encapsulant encapsulates the LED chip. The phosphor particles and the anti-humidity particles are distributed within the encapsulant. A first light emitted from the LED chip excites the phosphor particles to emit a second light. Some of the anti-humidity particles are adhered onto a surface of the phosphor particles, while the other anti-humidity particles are not adhered onto the surface of the phosphor particles. The anti-humidity particles absorb H2O so as to avoid H2O from being reacted with the phosphor particles. The LED package of the present application has favorable water resistance.

Abstract: A method for forming a semiconductor layer includes following steps. First, an epitaxial substrate having at least a first growth region and at least a second growth region is provided. An area ratio of C plane to R plane in the first growth region is greater than 52/48. An epitaxial process is then performed on the epitaxial substrate to form a semiconductor layer. During the epitaxial process, a semiconductor material is selectively grown on the first growth region, and then the semiconductor material is laterally overgrown on the second growth region and covers the same.

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract: A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.