Abstract: In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.

Abstract: A lamp tube according to the present invention at least comprises: a tube body, a light-emitting module, a driving module and an electrical connection module. The light-emitting module and the driving module are disposed in the tube body. The light-emitting module is provided with a first circuit board and a plurality of LEDs. The driving module is provided with at least a second circuit board and a drive circuit. The electrical connection module forms an electrical connection between the first and second circuit boards. It is convenient to independently replace or repair the driving module or the light-emitting module without discarding the entire lamp tube so as to effectively save costs and achieve the effects of energy saving and environmental protection.

Abstract: The present invention discloses a light emitting element including a carrier, at least one light emitting chip, an adhesive and a first encapsulated layer. The light emitting chip is fixed onto the carrier by the adhesive, and most of the carrier and adhesive are made of a light absorbing material, so that the external luminescence quantum efficiency of the light emitting element is poor. The invention adopts a first encapsulated layer disposed on the carrier to cover the light absorbing material including the adhesive or carrier, so as to reduce the light absorption and improve the external luminescence quantum efficiency of the light emitting element.

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

Abstract: A light-emitting diode has a metal structure, a light-emitting chip, and a bowl structure. The metal structure has a platform and a heat sink. The platform has a top face, a first side, and a second side opposite to the first side. A first reflector and a second reflector respectively extend from the first side and the second side. The heat sink extends below the top face and has a drop from the bottom surfaces of the first reflector and the second reflector. The light-emitting chip is disposed on the top face. The bowl structure covers the outer surface of the metal structure and shields the bottom surfaces of the first reflector and the second reflector. A thermal dispassion surface of the heat sink is exposed from the bowl structure. An inner surface of bowl wall has a plurality of reflection structures to promote the light extraction efficiency.

Abstract: A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.