Abstract: A lamp module is provided, including an insulative member, a cover lens connected to the insulative member, and a light module disposed between the insulative member and the cover lens. The light module can emit light through the cover lens for illumination.

Abstract: A fabrication method of a light-emitting diode including forming an epitaxial layer on a first substrate; forming a metal pad and a stress release ring on the epitaxial layer, wherein the stress release ring surrounds the metal pad; performing a substrate replacement process to transfer the epitaxial layer, the metal pad, and the stress release ring onto a second substrate, wherein the metal pad and the stress release ring are disposed between the epitaxial layer and the second substrate; patterning the epitaxial layer to expose a portion of the stress release ring; and removing the stress release ring to suspend a portion of the epitaxial layer. Moreover, a light emitting diode is provided.

Abstract: A semiconductor light emitting structure includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer and two electrodes. The substrate has a top surface and a bottom surface. The top surface is not parallel to the bottom light emitting surface of the active layer. The first semiconductor layer is disposed on the top surface. The active layer is disposed on at least one portion of the first semiconductor layer. The second semiconductor layer is disposed on the active layer. In an embodiment, the top surface can be realized by an oblique surface, a curved surface or a zigzag surface.

Abstract: A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

Abstract: A wafer splitting apparatus suitable for splitting a plurality of chip regions of a wafer into a plurality of independent dice is provided. The wafer splitting apparatus includes a splitting knife body and at least a vibrating hammer. The splitting knife body is disposed at one side of the wafer, and has a first surface facing the wafer. The first surface stretches over a plurality of chip regions in all extending directions of the first surface passing through a center of the first surface. The splitting knife body is disposed between the wafer and the vibrating hammer, and the vibrating hammer is suitable for knocking the splitting knife body in a direction toward the wafer to make the splitting knife body move toward the wafer, so as to split the chip regions of the wafer into a plurality of independent dice. A wafer splitting process is also provided.

Abstract: An inspection machine capable of inspecting optical property and electrical property of a light emitting device is provided. The inspection machine includes a substrate table, a probe mechanism, a heating apparatus, a cooling apparatus, an image-sensing apparatus, a temperature-sensing apparatus and a moving mechanism. The probe mechanism is capable of moving toward the light emitting device to contact therewith. The heating apparatus is capable of heating the light emitting device within a first temperature range. The cooling apparatus is capable of cooling the light emitting device within a second temperature range. The image-sensing apparatus senses a light emitting image provided from the light emitting device. The temperature-sensing apparatus senses the present temperature of the light emitting device. The image-sensing apparatus is disposed on the moving mechanism. The moving mechanism is capable of moving the image-sensing apparatus.

Abstract: An SMD diode holding structure includes a plastic housing and a plurality of metal holders. Two ends of the plastic housing from a function area and a notch. The metal holder has a base portion and a connecting pin portion. The top and bottom surfaces of the base portion are exposed to the function area and the notch. The top surface of one base portion in the function area is connected with an LED chip, and the bottom surface of another base portion in the notch is connected with the anti-ESD chip. The LED chip, the anti-ESD chip, and the base portion are connected with a conductive wire. The function area is covered with a first sealing compound, and the notch is covered with a second sealing compound. Light emitted from the LED chip is uniformly reflected in the function area, and the brightness is uniform.

Abstract: A light emitting diode includes a casing, a frame in the casing, one or a plurality of light emitting chip, and a packaging polymer; the frame being provided 5 with a placement area to receive placement of the light emitting chip, and an electrode area separated from the placement area; a sectional fall being disposed at where appropriately on the placement area to increase contact area between the frame and the casing and improve the relative stability between the casing and the frame.

Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.