Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

Abstract: An illuminating device comprises a base, a light source and at least one first layer, wherein said light source is assembled on said base to emit a first color temperature light, while first layer is located on the base along the first light irradiation path. The first light is passed through the first layer to react with said first layer to form a second color temperature light for emission, wherein said first color temperature is ranged from 2800K to 20000K, while excitation wavelength range of said first layer is mainly beyond the wavelength of ultraviolet lights for further adjusting the second color temperature range.

Abstract: A light emitting diode includes a casing, a frame in the casing, one or a plurality of light emitting chip, and a packaging polymer; the frame being provided with a placement area to receive placement of the light emitting chip, and an electrode area separated from the placement area; a sectional fall being disposed at where appropriately on the placement area to increase contact area between the frame and the casing and improve the relative stability between the casing and the frame.

Abstract: A method for transferring chips is provided for fixing one of the chips on a blue tape without sorting. A blue tape, a plurality of chips disposed thereon and a mapping data are provided, wherein the chips are disposed on the same blue tape, belong to the same wafer, and belong to a plurality of specifications. The specifications include a first specification and a second specification. The mapping data include the specifications the chips belonging to and the positions of the chips relative to the blue tape. According the mapping data, the chips belonging to the first specification are moved from the blue tape and fixed to a package carrier corresponding to the first specification. According the mapping data, the chips belonging to the second specification are moved from the blue tape and fixed to a package carrier corresponding to the second specification. A chip transferring apparatus is also provided.

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract: An LED lighting device includes a circuit board, a plurality of LED units, a waterproof layer and a middle layer. The LED units are disposed on the circuit board by surface mounted way. The light beam emitted from the LED units emits from the light-emitting surface. The waterproof layer wraps the circuit board and the LED units. The middle layer is located between the light-emitting surface and the water-proof layer. The middle layer extends from a direction of the LED units being disposed on the circuit board so that the middle layer fully covers the light-emitting surface. The light beams passing through the light-emitting surface enters into the waterproof layer via the middle layer. Thereby, the middle layer is located between the LED units and the waterproof layer to make the color of the light beam be more uniform.

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract: A casting adapted to carry a light emitting diode die and an anti-static die is disclosed. The casting comprises two electrodes for opposite electrodes and a wall. The light emitting diode die is mounted one of electrodes and the anti-static die is mounted on the other electrode. The wall is arranged between the light emitting diode die and the anti-static die. Further, the height of the wall is larger than that of the anti-static die to shade the anti-static die, whereby reflecting the light emitted from the light emitting diode die. Therefore, the reflection ratio of the light emitting diode die is improved, and the intensity generated by the whole light emitting diode is also improved.

Abstract: A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1<T2. Then, a second type doped semiconductor layer is formed on the light emitting layer.

Abstract: A light emitting diode (LED) chip includes a substrate, a light emitting semiconductor device, a first electrode, and a second electrode. The light emitting semiconductor device has a recess and includes a first portion and a second portion. The first portion is disposed on the substrate and located between the second portion and the substrate. The recess penetrates the second portion and exposes an exposed region of the first portion. The transverse sectional area of the first portion and the transverse sectional area of the second portion increase along a direction away from the substrate. The first electrode is disposed on the exposed region of the first portion and electrically connected to the first portion. The second electrode is disposed on and electrically connected to the second portion.

Abstract: A package substrate of the present invention at least comprises a metal substrate and a plurality of light emitting dies. The metal substrate is provided thereon with at least one trench. The trench is recessed into the surface of the metal substrate through an insulating layer. The light emitting dies are secured in the trench and electrically connected to a predetermined wiring layer on the metal substrate by metal wires, thereby obtaining a light emitting die package substrate with good thermal conductivity, high heat dissipation, separate electrical and thermal paths and a simple and firm structure.

Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

Abstract: A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.

Abstract: An LED package including a lead-frame, at least an LED chip and an encapsulant is provided. The lead-frame has a roughened surface, the LED chip is disposed on the lead-frame and electrically connected to the lead-frame, and the roughened surface is suitable to scatter the light emitted from the LED chip. In addition, the encapsulant encapsulates the LED chip and a part of the lead-frame, and the rest part of the lead-frame is exposed out of the encapsulant.