Abstract: In a multi-layer coating for a material of good transparency for visible light, with an emissivity e<0.04 and a light transmission T.gtoreq.78% and with two silver layers of different thickness, three oxide coatings are provided, and very thin metal or metal suboxide coatings as blockers, the oxide layers being alloys of the metals SnMg, SnAl, SnZr, SnTi or SnTa.

Abstract: A source (1) is equipped with a conveying device (4) for discharging the particles (2, 2a) at adjustable rates per unit time. A crystal (16), formed from doped particles, is withdrawn from the melting crucible (13) at a predetermined rate per unit time. So that the control process can be conducted smoothly over prolonged periods of time with precise doping, the particles (2, 2a) are fed single file to the melting crucible (13) and counted by at least one sensor (21, 22). The sequence of count pulses is sent to a counter (25) and compared there with a corresponding sequence of reference input pulses. The comparison signal formed from the count pulses and the reference input pulses is used, in accordance with its sign, as a control signal for adjusting the amount of particles being discharged per unit time from source (1) to correspond to the reference value.

Abstract: A counterflow leak-detector unit (1) with an inlet (2) connected to a test specimen, or a chamber housing a test specimen. A high-vacuum pump (4) produces pressure in a test-gas detector. The inlet (2) to the leak-detector unit is connected to an intermediate line (16) in the high-vacuum pump (4). To increase detection sensitivity without any danger of the pressure in the detector rising to inadmissible levels, a constriction (17) is located between two high-vacuum pump states (5, 6) of the high vacuum pump (4). Pump stages (5, 6) are separated by the intermediate line (16). The inlet (2) to the leak-detector unit (1) is connected to the outlet side of the high-vacuum pump state (5) at a point upstream of the constriction (17).

Abstract: The invention relates to a gas friction pump with a high vacuum (HV) area and a forevacuum area (FV) area; in order to avoid, on the pumping surfaces, the formation of solid materials when such pumps are used for chemical processes, it is proposed that the HV area and the FV area have different working temperatures, so that the temperature of the HV area is lower than the temperature of the FV area (FIG. 1).

Abstract: In a coating apparatus, a sputter cathode (1) has, directly side by side, two electrodes (2, 3) connected in common to a high-frequency generator and having each a target (9, 10). The targets (9, 10) of both electrodes (2, 3) abut one another each with a straight edge (11, 12). A dark space shield surrounds both electrodes (2, 3) and targets (9, 10) together.

Abstract: A coating system has, in a housing (1), a sputtering chamber (3) for the coating of a substrate (22) and a target carrier coating chamber (4) for the continuous coating of a rotating target carrier (2) with a coating of target material (25), which projects into both chambers (3, 4). The surface of the carrier which has been coated in the target carrier coating chamber (4) passes continuously through the sputtering chamber (3). The previously produced coating forms the target for the sputtering process in the sputtering chamber (3).

Abstract: A substrate carrier plate (17, 17a) designed to hold at least one substrate is removably attached to a support element (19, 19a) of a base (2). The carrier plate is held to the support element (19, 19a) at least at one point by a centering pin (22, 23; 22a, 23a), which projects from the plate of the support element (19) and fits into a hole (24, 25) in the substrate carrier plate (17), and at least at one other point by a clamping device (18, 18a). The clamping device (18, 18a) is held on a control part (11) on the base (2) in such a way that it can be moved by the displacement of an actuating arm (21) between a clamping position and a release position, and it is also provided with a tensioning roller (14), which is supported on a ramp (15, 15a) on the substrate carrier plate (17). The substrate carrier plate (17) has an opening (20, 20a) to allow the passage of the tensioning roller (14), the tensioning roller (14, 14a) being located behind this opening when in its release position.

Abstract: A method is proposed for controlling a reactive sputtering process wherein the working point on the physical characteristic curves, cathode voltage or working current intensity over reactive gas flow to the sputtering apparatus, defined by the value of one of the two factors determining the electrical power drain of the reactive sputtering process, is adjusted and maintained constant by metering the reactive gas, for example O.sub.2, to the process chamber. Further, the invention proposes a device for the practice of the method, wherein a sputtering apparatus is provided, comprising a controller 5 (reactive gas controller) and a control valve 8 for metering the reactive gas. Further, a signal line 15 is provided which carries the cathode voltage to the input of the controller in which the output of the controller is connected to the control valve via a line 16 which supplies the adjusting magnitude computed in the controller to the control valve.

Abstract: An electronic circuit for measuring current in a working circuit is provided with a first operational amplifier having a positive input, a negative input, and an output connected to at least one in-line amplifier to form a first current path. A second operational amplifier having a positive input, a negative input, and an output connected to a differential amplifier is provided within the circuit to form a second current path. An input terminal is connected to the negative inputs of each of the operational amplifiers to provide a connection between the electronic circuit and the working circuit. A variable conductance component is connected in series between the input terminal and the negative input of the second operational amplifier to control the flow of variable currents through the two current paths.

Abstract: A cryogenic pump with an essentially cup-shaped housing (2), with a radiation screen (4) disposed in the housing and also essentially cup-shaped, with an inlet opening (6), with a cold head (3) extending into the housing and the radiation screen, with pump surfaces (15) for condensable gases, disposed on the cold head, with a collecting chamber for liquid condensate developing during regeneration of the pump; in order to make possible a regeneration of the pump in various installation positions it is proposed that the condensate collecting chamber is laterally disposed in such a way that the pump (1) can be regenerated even if attached horizontally.

Abstract: A magnetron cathode for a cathode sputtering system has a target holder for holding a target 9 where the erosion zone is opposite the substrate. The non-sputtering target surfaces 9a are covered with a barrier layer or protective layer 21.

Abstract: A closed cylindrical housing defining a transport chamber has a top plate with a first opening communicating with an entry and exit chamber, and a second opening communicating with a coating chamber. A turntable rotatable about an axis in the transport chamber carries a holder to a first position below the first opening as it carries a like holder to a second position below the second opening. Each holder has thereon a container with a diameter smaller than the first opening but larger than the second opening. A first lifter raises a holder sealingly against the top plate around the first opening, the container thereon passing through the first opening to load or unload substrates. A second lifter raises the other holder so that the container thereon abuts a mask defining the second opening in order to coat a substrate in the container.

Abstract: A vacuum coating system has a processing station (2) designed as a sputter-etching station, in which a high-frequency input electrode (25) is mounted between two substrate holders (23, 24), which carry the substrates (5, 6). Between the substrate holders (23, 24) and the high-frequency input electrode (25), a distance (a) is provided, which is smaller than the dark space distance.

Abstract: An evacuable chamber serving as a cathode contains a rotatable magnet system and is connected to a high frequency power supply for sputtering a target. The chamber is electrically isolated from an evacuable housing containing the substrate to be coated, the chamber being covered by a cup-like shield fixed to the housing to define an interior space. A pipe for evacuating the chamber includes first and second sections separated by a gap and connected by an electrically insulating collar in which parallel metal grids are installed in the gap and respectively connected to the power source and to ground in order to prevent the formation of secondary plasma.

Abstract: Individual target segments (A-F), are mounted on a mounting plate by means of locating studs inserted into mounting holes of elongate or circular cross sections in correspondence with the change in length caused by the thermal expansion of the target segments. The segments are retained by screws received in tapped bones in the studs, which are welded to the target backplates. The individual segments (A-F) each consist of a target backplate and a target bonded to the backplate. The perimeter of each backplate over laps the perimeter of each target segment, this overlap amounting to 0.05-0.2 mm when molybdenum or titanium is used for the target backplate and an indium-tin alloy is used for the sputter target.

Abstract: The invention relates to a microwave-enhanced sputtering configuration. In this sputtering configuration a magnetron cathode is disposed in a housing whose target opposes a substrate. At both sides of the target is provided in each instance a microwave inlet comprising a waveguide coupled with a cavity resonator. The waveguide is implemented so that the microwave extends parallel to the target surface. Around the target is looped a first magnet coil generating a first magnetic field, while around an L-shaped end of the waveguide is looped a second magnet coil.

Abstract: The target (5) of a sputter cathode 3 is permanently bonded to a metallic backing plate (14, 15) with a coefficient of thermal expansion similar to that of the target (5). This backing plate (14, 15) is held removably on the electrode (4), for example by means of spring clips (16, 17).

Abstract: The inside of a coating chamber (2) has a sputtering cathode (3) bearing a magnet set (6) and having a pot-shaped electrode (4) and a target (5). The electrode (4) is closed on the side facing away from the target (5) by a cover (11) to form a pressure equalizing chamber (12). The latter has a vacuum connection (13) for establishing a vacuum acting against the vacuum in the coating chamber (2).

Abstract: The invention relates to a device and a method for cleaning a filter (7) disposed between a chamber contaminated with particles and a pump station. Herein a feedline (21) for oxygen or for an oxygen/inert gas mixture to the filter (7) is provided which is equipped with an arrangement (11) influencing the flow of gas. Moreover, the device has a drainage (20) for gaseous reaction products and, if necessary, inert gas from the filter (7), which is provided with an arrangement (15) influencing the throughflow of this gas.

Abstract: For the production of a coating formed by cathode sputtering, a target made from an alloy of gold and preferably vanadium is used. During the cathode sputtering, nitrogen gas is used as the reactive gas. The result is the formation of vanadium nitrides on the substrate to be coated. By varying the nitrogen content, the proportion of the vanadium nitrides can be changed thereby causing the appearance and the hardness of the coating to also change. This change in coating characteristics can accommodate a broad range of requirements avoiding the necessity of using different targets for different coating characteristics.