Abstract: A mechanically strong, robust, and flexibly designed fuse module is provided that can include (1) a fusible element surrounded by two housings and (2) mechanically reinforced terminals. In particular, the fusible element can be disposed between a first terminal and a second terminal, an inner housing can surround the fusible element, and an outer housing can be overmolded over the inner housing such that the first terminal and the second terminal can extend outside of both the inner housing and the outer housing. The first terminal can be mechanically reinforced by bending so as to fold around and onto the outer housing, and the second terminal can be double layered for mechanical reinforcement.

Abstract: A method for forming a semiconductor package. The method may include performing a lead attachment operation, comprising attaching at least one lead directly to a substrate that is configured to support one or more semiconductor die, wherein the at least one lead is attached to the substrate in singulated fashion.

Abstract: A method of manufacturing a metal oxide varistor (MOV), the method including placing a quantity of a MOV composition in a pressing die, the MOV composition including metal oxide granules mixed with a polyaniline-polymer, performing a pressing operation including operating the pressing die to compress the MOV composition into a solid MOV chip, and applying first and second electrodes to opposing first and second sides of the MOV chip, wherein the pressing operation is performed at a temperature in a range of 15 degrees Celsius to 200 degrees Celsius.

Abstract: Systems and methods for identifying a location of a thermal event detected by a temperature sensing tape are provided. In some embodiments, the temperature sensing tape can include a resistive ladder with parallel resistors between a plurality of temperature sensing elements to create voltage dividers, and unique analog output voltages can correspond to different ones of the plurality of temperature sensing elements being activated. In some embodiments, pulses injected into and reflected by the temperature sensing tape can be used detect a distance to a location where a triggering event is detected.

Abstract: A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, electrically conductive first and second leads connected to the first and second electrodes, respectively, and an arc mitigating, flame retarding coating covering the MOV chip, the first and second electrodes, and portions of the first and second leads, the arc mitigating, flame retarding coating comprising a silicone composition formed of a filler material suspended in a silicone resin, wherein the filler material includes one or more of melamine, guanidine, guanine, hydantoin, allantoin, urea, melamine-formaldehyde, melamine-cyanurate polymer, and boric acid.

Abstract: Methods for making reverse-blocking insulated gate bipolar transistors and associated structures. A first and a second silicon wafer substrates are provided and bonded. One or more separation diffusion regions are formed in the first silicon wafer substrate. One or more front side metal-oxide semiconductor (MOS) structures are formed on a top surface of the first silicon wafer substrate. The second silicon wafer substrate layer is removed. A contact diffusion layer is formed on a bottom surface of the first silicon wafer substrate. A backside metallization layer is formed on a bottom surface of the contact diffusion layer.

Abstract: A battery master disconnect switch includes a front panel and a back panel. The front panel has a selector knob for selecting between multiple positions. The back panel has a primary terminal, a secondary terminal, and an auxiliary terminal. The primary terminal is for connection, using a first cable, to a primary battery. The secondary terminal is for connection, using a second cable, to a secondary battery. The auxiliary terminal is for enabling a device. The device receives power for any of the positions of the selector knob. The battery master disconnect switch can present a voltage for the primary, the secondary, or both the primary and secondary batteries.

Abstract: A resistance stable polymer positive temperature coefficient (PPTC) material is provided that can include a polymer matrix, a plurality of filler components disposed in the polymer matrix, and a plurality of carbon black particles bonded around each of the plurality of filler components to increase dispersion of the plurality of carbon black particles in the polymer matrix, thereby increasing a conductive volume of the polymer matrix and reducing a resistance variance in the polymer matrix.

Abstract: A method for preparing a preparing a polymeric positive temperature coefficient (PPTC) compound and conformally applying such compound to a substrate in accordance with an embodiment of the present disclosure may include preparing and mixing raw materials to form a PPTC mixture, processing the PPTC mixture through polymer compounding equipment, wherein the PPTC mixture is heated and is extruded as a PPTC compound, performing a beaming process on the polymer compound to establish crosslinking between polymer chains in the PPTC compound, and applying the PPTC compound to a substrate using a hot application process wherein the PPTC compound is heated and is conformally applied to a surface of the substrate.

Abstract: A method may include providing a semiconductor substrate, comprising a first layer of a first thickness dopant, a first dopant polarity, and a first dopant concentration; and a second layer having a second thickness greater than the first thickness, a second polarity, and second dopant concentration, wherein the second layer defines a second dopant concentration, greater than the first dopant concentration. The method may further include forming a separation diffusion region having a dopant of the second dopant polarity around a periphery of the first layer, where the separation diffusion region extends from a first surface to a separation depth, greater than the first thickness of the first layer. The method may also include performing a thinning of the semiconductor substrate by removing a portion of the second layer from the second surface, wherein after the thinning, the second layer comprises a third thickness, less than the first thickness.

Abstract: A substrate package arrangement may include a substrate that contains a ceramic body, a top metal layer, disposed on a top side of the ceramic body, and a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top surface. The substrate package arrangement may further include a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer, wherein the substrate and lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.

Abstract: Disclosed is an adaptive pre-charge control circuit, for use in a solid state battery disconnect and protection system, wherein the adaptive pre-charge control circuit includes a high-voltage switch coupled between an electric battery and a DC link capacitor of an electric vehicle, and wherein the electric vehicle is powered by the electric battery. The control circuit may be operable to issue a pulse width modulated (PWM) signal to generate a current profile wherein every other pulse exceeds a predefined limit, monitor, during pre-charging, the current profile, and to determine an overcurrent fault exists in the case that two consecutive pulses exceed the predefined limit.

Abstract: A circuit protection device may include a varistor body including a first side, wherein a thermal electrode is disposed along the first side, and wherein a first lead is electrically connected to the thermal electrode and a second lead is electrically connected to a second side. The circuit protection device may further include a reflowable circuit protection device atop the thermal electrode, and a third lead connected to the reflowable circuit protection device, wherein an end of the third lead is a spring connected to the thermal electrode by a conductive element.

Abstract: A pressure contact assembly includes a power substrate, a chip, and a lead. The power substrate has a surface connected to a ceramic tile and a cavity. The chip is soldered to the surface. The lead is to be inserted into the cavity and has a top portion to connect to an external device and a bottom portion to fit into the cavity.

Abstract: A fuse holder includes a movable tab, a base, and a cover. A stud is affixed to the movable tab and secures a terminal of a bolt-down fuse. A second stud is affixed to the base and secures a second terminal of the bolt-down fuse. The base has a channel into which the movable tab is slidably inserted. The cover connects to the base and is located over the stud and the second stud.

Abstract: A circuit protection device may include a current sensor and a pyrotechnic fuse connected to the current sensor, wherein the pyrotechnic fuse includes a housing and a busbar extending through the housing, and wherein the busbar is positioned between a first chamber and a second chamber. The circuit protection device may further include a piston within the first chamber, wherein the piston is operable to receive a force from a squib, and wherein in response to a signal from the current sensor, the force from the squib causes the piston to create an opening in the busbar.

Abstract: An apparatus and an associated method for a reverse-conducting insulated gate bipolar transistors and associated structures. The apparatus includes a substrate disposed between a frontside and a backside, a diode pilot region disposed in the substrate, an insulated gate bipolar transistor (IGBT) region disposed in the substrate, and a diode region with a barrier layer disposed adjacent to each of and between the diode pilot region and the IGBT region. The barrier layer is configured to prevent flow of electrons at a first predetermined current and allow flow of electrons at a second predetermined current.

Abstract: Novel methods of preparing a metal bonded substrate. A method may include providing a ceramic substrate, the ceramic substrate comprising a ceramic body. The method may include bonding a thick metal sheet to the ceramic substrate, wherein the bonding comprises forming a metal oxide layer by powder deposition on a metal surface, and bringing the ceramic substrate and thick metal sheet together, wherein the metal oxide layer and the thick metal sheet interact to form an interface layer between the thick metal sheet and the ceramic substrate, after the bonding.

Abstract: A method of manufacturing a power semiconductor device in accordance with an embodiment of the present disclosure may include providing a substrate disposed atop a heatsink, electrically connecting a semiconductor die to a top surface of the substrate, disposing a thin metallic layer atop the substrate, disposing a terminal atop the thin metallic layer, and performing a welding operation wherein a laser beam is directed at a top surface of the terminal to produce a plurality of weld connections connecting the terminal to the substrate, wherein the weld connections are separated by gaps, and wherein heat generated during the welding operation melts the thin metallic layer and molten material of the thin metallic flows into the gaps.

Abstract: The disclosure is directed to protection devices including a positive temperature coefficient (PTC) element having a first main side opposite a second main side, and a thermal device coupled to the PTC element by a conductive material. The thermal device may include a main body, a first heating element coupled to a first side of the main body, and a second heating element coupled to a second side of the main body, wherein the first heating element is directly coupled to the second main side of the PTC element.