Abstract: Disclosed are various protection devices and associated methods. In some embodiments, a protection device may include a substrate, and a fusible element extending between a first terminal and a second terminal, wherein the fusible element, the first terminal, and the second terminal are coupled to the substrate. The protection device may further include a cover formed over the fusible element, wherein the fusible element is positioned between the cover and the substrate.

Abstract: A fuse holder includes a housing and a knob. The housing has a telescoping chamber designed to receive a knob terminal, where the knob terminal is adapted to receive a fuse. The knob has a neck which is inserted into the telescoping chamber to enclose the cylindrical fuse. The housing and neck are made of a polymer having a thermal conductivity in a range of 4.0 to 10 W/mK.

Abstract: A device assembly for surface mount devices includes a matrix of SMD skeletons and a polymeric positive temperature coefficient (PPTC) material disposed over the matrix. The matrix consists of multiple rows, with each SMD skeleton having a pair of terminals and multiple whiskers perpendicular to and between the terminals. The PPTC material connects the terminals to the whiskers.

Abstract: A lead-free power semiconductor package (PSP) includes a substrate, multiple copper leads, a die, and an encapsulant. The substrate has alternating layers of copper and silicon nitride. The copper leads, which are not part of a leadframe, are connected to the substrate using active metal brazing. The die, which contains circuitry to allow the PSP to operate, is connected to the substrate using silver sintered paste. The encapsulant encases the substrate and the die with a portion of the multiple leads being outside the encapsulant.

Abstract: A positive temperature coefficient (PTC) heater including a PTC layer formed of a material exhibiting a non-linear change in resistance in response to changes in temperature, an electrode layer including first and second electrodes disposed atop the PTC layer, each of the first and second electrodes including a spine and a plurality of tines extending inwardly therefrom, with the spine of the first electrode oriented parallel to the spine of the second electrode and with the tines of the first electrode disposed in an interdigitated relationship with the tines of the second electrode, an adhesive layer including first and second adhesive strips disposed atop the spines of the first and second electrodes, respectively, and a busbar layer including first and second busbars disposed atop the first and second adhesive strips, respectively, and adhered to the spines of the first and second electrodes by the first and second adhesive strips, respectively.

Abstract: Circuitry and techniques for providing a bidirectional switch in devices for overcurrent protection and voltage protection are disclosed herein. In one embodiment, a circuit may include a first reverse-blocking insulating gate bipolar transistor (IGBT), having a first gate terminal, first collector terminal and a first emitter terminal. The circuit may include a second reverse-blocking IGBT, having a second gate terminal, a second collector terminal, electrically coupled to the first emitter terminal, and a second emitter terminal, electrically coupled to the first collector terminal. As such the first IGBT and the second IGBT may define a first current path, extending from the first collector to the second emitter; and a switch control circuit, coupled to send a control signal to at least one of: the first gate terminal and the second gate terminal, during an overcurrent event.

Abstract: A pre-charge circuit. The precharge circuit may include a switching device for controlling a voltage to be supplied to a battery; and a heterogeneous thermistor circuit, coupled to the switching device. The heterogeneous thermistor circuit may include a negative temperature coefficient (NTC) component; and a polymer positive temperature coefficient (PPTC) component, arranged in electrical series with the NTC component and the switching device.

Abstract: Disclosed is an adaptive pre-charge control circuit, for use in a solid state battery disconnect and protection system, wherein the adaptive pre-charge control circuit includes a high-voltage switch coupled between an electric battery and a DC link capacitor of an electric vehicle, and wherein the electric vehicle is powered by the electric battery. The control circuit may be operable to issue a pulse width modulated (PWM) signal to generate a current profile wherein every other pulse exceeds a predefined limit, monitor, during pre-charging, the current profile, and to determine an overcurrent fault exists in the case that two consecutive pulses exceed the predefined limit.

Abstract: A substrate package arrangement may include a substrate that contains a ceramic body, a top metal layer, disposed on a top side of the ceramic body, and a bottom metal layer, disposed on a bottom side of the ceramic body, opposite the top surface. The substrate package arrangement may further include a lead structure, electrically connected to the top metal layer, and being electrically isolated from the bottom metal layer, wherein the substrate and lead structure are arranged in a discrete package, and wherein the ceramic body is formed of a high thermal conductivity material.

Abstract: Disclosed is a control circuit, for use in a solid state battery disconnect and protection system, wherein control circuit includes a high-voltage switch coupled between an electric battery and a DC link capacitor of an electric vehicle, wherein the electric vehicle is powered by the electric battery, and a control block. The control block may by operable to monitor a rate of change and a value of a current on a connection to the high-voltage switch, determine whether the rate of change of the current exceeds a first predetermined threshold and determine whether the value of the current exceeds a second predetermined threshold, and determine an overcurrent fault exists in the case that the first or second predetermined threshold is exceeded.

Abstract: A method of manufacturing a power semiconductor device in accordance with an embodiment of the present disclosure may include providing a substrate disposed atop a heatsink, electrically connecting a semiconductor die to a top surface of the substrate, disposing a thin metallic layer atop the substrate, disposing a terminal atop the thin metallic layer, and performing a welding operation wherein a laser beam is directed at a top surface of the terminal to produce a plurality of weld connections connecting the terminal to the substrate, wherein the weld connections are separated by gaps, and wherein heat generated during the welding operation melts the thin metallic layer and molten material of the thin metallic flows into the gaps.

Abstract: A self-limiting heater and method for building the self-limiting heater are disclosed. The self-limiting heater consists of a resistor and a PTC resistor coupled together in series with a power supply. Both resistive devices have good thermal coupling. The resistor has a minimal resistance change over changes in temperature while the resistance of the PTC resistor increases with an increase in temperature. The ohmic resistance ratio between the resistor and the PTC may be used to adjust the heater characteristics and limit the characteristic sharpness.

Abstract: Methods for making reverse-blocking insulated gate bipolar transistors and associated structures. A first and a second silicon wafer substrates are provided and bonded. One or more separation diffusion regions are formed in the first silicon wafer substrate. One or more front side metal-oxide semiconductor (MOS) structures are formed on a top surface of the first silicon wafer substrate. The second silicon wafer substrate layer is removed. A contact diffusion layer is formed on a bottom surface of the first silicon wafer substrate. A backside metallization layer is formed on a bottom surface of the contact diffusion layer.

Abstract: A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, and electrically conductive first and second leads connected to the first and second electrodes, respectively, wherein the first and second electrodes are formed of a material having a melting point greater than 1100 degrees Celsius.

Abstract: A miniature circuit breaker for providing short circuit and overload protection is disclosed herein. The miniature circuit breaker features a field effect transistor (FET), which may be a depletion mode metal oxide semiconductor FET (D MOSFET), a junction field-effect transistor (JFET), or a silicon carbide JFET, the FET being connected to a bi-metallic switch, where the bi-metallic switch acts as a temperature sensing circuit breaker. In combination, the D MOSFET and bi-metallic switch are able to limit current to downstream circuit components, thus protecting the components from damage.

Abstract: A fuse holder includes a housing and a knob. The housing has a telescoping chamber designed to receive a knob terminal, where the knob terminal is adapted to receive a fuse. The knob has a neck which is inserted into the telescoping chamber to enclose the cylindrical fuse. The housing and neck are made of a polymer having a thermal conductivity in a range of 4.0 to 10 W/mK.

Abstract: Provided herein a circuit protection devices including a fusible element attached to a ceramic substrate, the fusible element comprising a paste including a plurality of nickel particles.

Abstract: A relay circuit, including a solid state relay switch, connected to a first relay line and to a charging capacitor, and connected to a second relay line. The relay circuit may also include a solid state relay control circuit, coupled between the charging capacitor and the solid state relay switch. The solid state relay control circuit may include a voltage detection circuit, having an input coupled to an output of the charging capacitor, and having an output arranged to generate a LOW voltage signal when a voltage level of the charging capacitor is below a low threshold value. The solid state relay control circuit may also include a zero crossing circuit, coupled to the first relay line and the second relay line, and having an output to generate a clock signal when a zero crossing event takes place between the first relay line and the second relay line.

Abstract: A fuse element includes a bridge assembly located adjacent one side of a center portion. The bridge assembly includes multiple bridges connected to a fuse terminal. Each bridge has a cross-sectional area different from each other bridge. A first bridge is adjacent the center portion and has a first cross-sectional area. A last bridge is adjacent the fuse terminal and has a second cross-sectional area greater than the first cross-sectional area.

Abstract: A chip fuse includes a first terminal disposed on a first end of a fuse element array and a second terminal disposed on a second end of the fuse element array opposite the first end. The fuse element array includes multiple layers disposed in a stacked arrangement, each layer including a first terminal portion disposed within the first terminal, a second terminal portion disposed within the second terminal, a first fuse element portion orthogonal to and extending between the first terminal portion and the second terminal portion, and a second fuse element portion orthogonal to and extending between the first terminal portion and the second terminal portion. The first fuse element portion is adjacent the second fuse element portion.