Abstract: Embodiments of the invention include a calibration standard for semiconductor metrology tools. The standard comprises a substrate having a surface with a calibration layer formed thereon. A protective layer is formed over the underlying calibration layer. The calibration layer and protective layer are each formed to precise tolerances. The invention also includes methods for forming a calibration standard for semiconductor metrology tools.

Abstract: A data processing system comprising a block move engine, a memory, a register and a reader. The block move engine may be configured to process data. The memory may be configured to store data in the form of a linked list comprising a plurality of items of control data. The register may be associated with the block move engine and configured to control the block move engine, in response to the control data. The reader may be configured to read the control data from the memory and apply the control data to the register.

Abstract: An integrated circuit having functional circuitry within a core portion of the integrated circuit. Input circuits are disposed on a first layer within a peripheral portion of the integrated circuit, where the input circuits are electrically connected to the functional circuitry. Power and ground buss lines are disposed on a second layer within the peripheral portion of the integrated circuit, where the second layer overlies the first layer. The power and ground buss lines overlie the input circuits, and are electrically connected to the input circuits. Bonding pads are disposed on a third layer within the peripheral portion of the integrated circuit, where the third layer overlies the second layer. The bonding pads overlie the power and ground buss lines and the input circuits, and are electrically connected to the input circuits.

Abstract: A system for designing an integrated circuit (IC). The system generally comprising a circuit and a programmable portion used for diagnostics and finding bugs. The circuit generally comprises (i) a functional portion and (ii) a logic portion that may be connected to the functional portion. The logic portion generally includes one or more interfaces. The programmable portion may be configured to detect, correct and/or diagnose errors in the logic portion through the one or more interfaces.

Abstract: An apparatus comprising one or more enclosures and a controller. The one or more enclosures may each comprise one or more drives. The controller may be configured to map correctly correlating addresses to one or more drives. An advantageous aspect of the present invention is the ability to support general enclosure wiring when associating data with physical devices, such as associating SES data with physical devices on a fiber channel loop with soft addresses.

Abstract: The present invention provides a method of forming a semiconductor device fuse and a semiconductor device fuse structure. A first dielectric layer is formed on top of a metal layer in a semiconductor device. The dielectric layer is patterned to provide access to at least two contacts in the metal layer. A conductive metal layer is deposited and patterned to form a fuse between the fuse contacts. A second dielectric layer is deposited on the conductive metal layer.

Abstract: A substrate that includes a non-electrically conductive core having a first side and an opposing second side. A first electrically conductive layer is disposed on the first side of the core, and a second electrically conductive layer is disposed on the second side of the core. Electrically conductive core vias extend from the first side of the core to the second side of the core. The core vias are disposed in an array. An electrically conductive contact is formed on an upper build-up layer on the first side of the core, and overlies the array of core vias. A first electrically conductive via electrically connects the contact to an intervening build-up layer disposed between the upper build-up layer and the first electrically conductive layer. The first via overlies the core via array. A second electrically conductive via electrically connects the intervening build-up layer and the first electrically conductive layer, where the second electrically conductive via is not disposed over the core via array.

Abstract: A method for checking power errors in an ASIC design is disclosed. The method includes providing a power checker software program with one or more power checker modules that each check a particular type of power element in the ASIC design. A power checker database is created that stores the following: individual power elements in the ASIC design, a connectivity graph of the power elements, and location bins corresponding to physical areas in ASIC design that identify the power elements that are located within each area. The method further includes providing a user with a choice of which power elements in the design to check, and executing the power checker modules corresponding to the selected power elements in order to check for errors in the selected power elements. Finally, any detected errors are output for the user.

Abstract: The mask includes a substrate formed of a material having a first index of refraction and a first level of transmittance to a wavelength of light with which the phase shift mask is designed for use. Second portions of the substrate are impregnated with a dopant species, leaving first portions of the substrate unaffected by the dopant species. The second portions of the substrate have a second index of refraction and a second level of transmittance to the wavelength of light. The first index of refraction is not equal to the second index of refraction. The second portions of the substrate shift a phase of the light relative to the first portions of the substrate and thereby increase an effective imaging resolution of the phase shift mask. In this manner, instead of using an etch process or a deposition process to form phase shifting regions of the mask, a doping processing is used instead. Most preferably, an ion implantation process is used.

Abstract: A method of forming a metal interconnect in an integrated circuit. A copper layer is formed over dielectric structures on the integrated circuit, where the dielectric structures have an upper level. The copper layer is planarized to be no higher than the upper level of the dielectric structures, without reducing the upper level of the dielectric structures. An electrically conductive capping layer is formed over all of the copper layer, without the capping layer forming over any of the dielectric structures.

Abstract: A packaged integrated circuit including a package substrate having electrical contacts for receiving an integrated circuit. The integrated circuit is electrically connected to the electrical contacts of the package substrate. A stiffener is mounted to the package substrate, where the stiffener has a non-orthogonal cut out in which the integrated circuit is disposed. The edges of the cut out are disposed at no greater a distance from the corners of the integrated circuit than they are from the sides of the integrated circuit.

Abstract: A stiffener for reinforcing a package integrated circuit. The stiffener includes a rigid planar element having a first surface for bonding to a package substrate. The rigid planar element forms a major interior aperture for receiving and surrounding an integrated circuit on all sides of the integrated circuit. The rigid planar element also forms a minor interior aperture for receiving and surrounding a secondary circuit structure on at least three sides of the secondary circuit structure. In this manner, the stiffener provides structural support to the integrated circuit package, which reduces and preferably eliminates twisting and warping of the substrate package as it heats and is subjected to other stresses.

Abstract: A varactor is formed with a semiconductor junction having a retrograde dopant concentration profile in a depletion region. The retrograde dopant concentration profile results in an approximately linear capacitance/voltage characteristic response of the varactor. The retrograde dopant concentration profile also enables a peak of the dopant concentration to function as a low resistance conductive path connecting to the varactor.

Abstract: A system is provided for yield enhancement in programmable logic. The system includes first and second random combinational logic, first and second sets of IP logic blocks, and first and second BIST/MUX controllers. The first controller is electrically connected between the first logic and each of the blocks in the first set and electrically connected between each of the blocks in the first set and the second logic. The second controller is connected in the same manner with respect to the second set of blocks. The controllers are configured to test the blocks for functionality or non-functionality, to identify functional ones of the blocks and to provide electrical connections between a predetermined number of the functional blocks and the first and second logic.

Abstract: A bonding pad structure having an electrically conductive capping layer. An electrically conductive first supporting layer having major orthogonal sides is disposed under the electrically conductive capping layer. The electrically conductive first supporting layer is configured as a sheet having slotted voids in a first direction. An electrically conductive second supporting layer having major orthogonal sides is disposed under the electrically conductive first supporting layer. The electrically conductive second supporting layer is configured as a sheet having slotted voids in a second direction. The first direction and the second direction are associated one with another by being disposed at a positive value and a negative value of an angle, where the angle is neither zero nor ninety degrees with respect to the major orthogonal sides of the electrically conductive first supporting layer and the electrically conductive second supporting layer.

Abstract: A method for fabricating a semiconductor package having a 2-layer substrate, which includes an array of solder balls, is disclosed. The method includes patterning signal traces on a top layer of the substrate and identifying groups of signal traces to isolate. According to the present invention, a grounded isolation trace is then patterned adjacent to one of the groups of traces to isolate the signal traces, thereby providing noise shielding. In a preferred embodiment, the grounded isolation trace is provided with multiple vias, rather than only one. In a further aspect of the present invention a row of solder balls is connected together and to ground to create a bottom-layer isolating ground trace to further reduce noise. The bottom-layer isolating ground trace may be connected to the top-layer isolating ground trace using a via.

Abstract: A process for forming a capacitive structure that includes an upper layer having a first capacitor electrode section therein. A capacitor dielectric layer is formed adjacent the upper layer. The capacitor dielectric layer covers the first capacitor electrode section. A second capacitor electrode layer is formed adjacent the capacitor dielectric layer. The second capacitor electrode layer includes a second capacitor electrode section that at least partially covers the first capacitor electrode section, and which has an edge portion that extends beyond the underlying first capacitor electrode section. The capacitor dielectric layer being disposed between the first capacitor electrode section and the second capacitor electrode section. An upper dielectric layer is formed adjacent the second capacitor electrode section.

Abstract: A shared resource manager circuit for use in conjunction with multiple processors to manage allocation and deallocation of a shared resource. The shared resource manager allocates and deallocates software resources for utilization by the processors in response to allocation and deallocation requests by the processors. The shared resource manager may include a bus arbitrator as required in a particular application for interfacing with a system bus coupled to the processors to provide mutual exclusion in access to the shared resource manager among the multiple processors. The shared resource manager may manage a memory block (FIFO queue) with multiple resource control blocks. A system may advantageously apply a plurality of shared resource managers coupled to a plurality of processors via a common interface bus. Each shared resource manager device may then be associated with management of one particular shared resource.

Abstract: A tool for designing an integrated circuit and semiconductor product that generates correct RTL for I/O buffer structures in consideration of the requirements of diffused configurable I/O blocks and/or I/O hardmacs of the product. Given either a slice description of a partially manufactured semiconductor product, a designer can generate the I/O resources of an application set. Then given an application set having a transistor fabric, and the diffused configurable I/O blocks and/or the I/O hardmacs, and a plurality of accompanying shells, the I/O generation tool herein automatically reads a database having the slice description and generates the I/O buffer structures from the transistor fabric. The I/O generation tool further conditions and integrates input from either or both customer having her/his own logic and requesting a specific semiconductor product or from IP cores with their preestablished logic.

Abstract: An improved error correction code process takes advantage of information available from a post processor. This information is a list of highly probable error event patterns and locations found by employing a list Viterbi or a set of matched filters on Viterbi data. This list of possible errors can be used by the error correction code decoder in an iterative process whenever the correction power of the error correction code decoder is exceeded. If the error correction code decoder cannot correct the data on its first unassisted try, an iterative process is employed which, in essence, modifies the data with potential errors identified from the list created by the post processor and tries the correction process over again. An algorithm may be employed to try each error singly or in combination with other errors. This iterative process continues until a correctable indication is given by the error correction code decoder algorithm.