Abstract: A method for marking a wafer that is cut from a boule. A surface of the boule is marked with an encoded marking that extends completely along a distance of the boule that is used for cutting wafers. The encoded marking is disposed substantially parallel to a length axis of the boule. The wafer is cut from the boule from within the distance, such that the encoded marking along the surface of the boule is disposed at a peripheral edge of the wafer. The encoded marking contains information in regard to the wafer.

Abstract: An integrated circuit is provided which includes at a first, a second, or a third row of bonding pads. A plurality of trace conductors is provided to route the signal of each bonding pad to an I/O ring and/or a core. The trace conductors of different metal widths are configured on a separate and distinct metal layers such that routing may be done above or below the bonding pad rows and other trace conductors. A plurality of vias is provided to connect between the different metal layers. This allows multiple rows of bonding pads to be arranged on the perimeters of the core without having to compromise for small pitch distances or longer routing paths.

Abstract: A bonding pad structure having an electrically conductive capping layer. An electrically conductive first supporting layer is disposed immediately under the electrically conductive capping layer, without any intervening layers between the electrically conductive capping layer and the electrically conductive first supporting layer. The electrically conductive first supporting layer is configured as one of a sheet having no voids and a sheet having slotted voids in a first direction. An electrically conductive second supporting layer is disposed under the electrically conductive first supporting layer. The electrically conductive second supporting layer is configured as one of a sheet having slotted voids in the first direction, a sheet having slotted voids in a second direction, and a sheet having checkerboard voids.

Abstract: A method is presented for built-in redundancy analysis of a semiconductor memory device. The method does not require retention of an entire memory bitmap, and may be implemented on-chip and integrated within existing BIST circuitry. The regular memory is comprehensively tested, and defective rows and columns are flagged for replacement by redundant rows and/or columns; the elements containing the most defects are the first to be flagged. If all of the defective memory locations can be replaced using redundant rows and columns, the method designates the memory as repairable; a repair solution may then be scanned out of the memory device. The method is believed to provide a fast, cost-effective means of testing and repairing memory devices, with a consequent improvement in production yields.

Abstract: A method of performing data shifts in a data processing system between a source and a plurality of destinations using a direct memory accessing scheme, comprising the steps of: (A) reading a data block from the source destinations; (B) writing the data block to a first of the plurality of destinations; and (C) writing the data block to a second of the plurality of destinations. Addresses of the first and second destinations are previously stored.

Abstract: An architecture is described having characteristics, scale and realized according to a minimized cost function with the ability to control and govern liability, availability, band width, capacity and quality of service as one pleases subject to a desired type of management software or framework.

Abstract: A method of determining temperature of a semiconductor wafer during wafer fabrication includes the step of providing a response circuit on the semiconductor wafer. The method also includes the step of transmitting an interrogation signal with a signal transceiver so as to excite the response circuit. The method further includes the step of receiving a response signal which was generated by the response circuit as a result of excitation thereof. In addition, the method includes the step of determining temperature of the semiconductor wafer based on the response signal. Moreover, the method includes the step of fabricating a circuit layer on the semiconductor wafer. Both the transmitting step tri and the receiving step are performed contemporaneously with the fabricating step. An apparatus for determining temperature of a semiconductor wafer during wafer fabrication is also disclosed.

Abstract: A capping layer of an insulator such as silicon oxynitride is formed over horizontally closely spaced apart metal lines on an oxide layer of an integrated circuit structure formed on a semiconductor substrate. Low k silicon oxide dielectric material which exhibits void-free deposition properties in high aspect ratio regions between the closely spaced apart metal lines is then deposited over and between the metal lines and over the silicon oxynitride caps on the metal lines. After the formation of such void-free low k silicon oxide dielectric material between the closely spaced apart metal lines and the silicon oxynitride caps thereon, the structure is planarized to bring the level of the low k silicon oxide dielectric material down to the level of the tops of the silicon oxynitride caps on the metal lines. A further layer of standard k silicon oxide dielectric material is then formed over the planarized void-free low k silicon oxide dielectric layer and the silicon oxynitride caps.

Abstract: A method of making a semiconductor device includes providing a first element formed of a first substantially electrically conductive material and having an upper surface. A second element adjacent to the first element is provided. The second element is formed of a first substantially non-electrically conductive material. An upper surface of the second element slopes downwardly toward the upper surface of the first element. A first layer of a second substantially non-electrically conductive material is disposed over the upper surface of the first element and the upper surface of the second element. The first layer has a thickness in the vertical direction that is greater in an area over the downward slope of the second element than in an area over the first element. An etching process is performed such that the layer is perforated above the upper surface of the first element and imperforated in the vertically thicker area above the downwardly sloping upper surface of the second element.

Abstract: A method of calculating skews for memory cells and flip-flops in a circuit design to reduce peak power includes receiving a circuit design containing memory cells and other clocked cells; constructing a first graph that includes a union of all inputs, vertices representative of the memory cells and the other clocked cells, a union of all outputs, and edges between the vertices each having a length equal to a delay between corresponding vertices minus a clock period; constructing a second graph having vertices representative of only the memory cells and corresponding edges such that the maximum length between any two corresponding vertices is less than zero; calculating a skew for each of the memory cells from the second graph; constructing a third graph from the first graph by merging the vertices of the memory cells into a single vertex; calculating a skew for each of the other clocked cells from the third graph; normalizing each skew calculated for the other clocked cells; recalculating the skew for each of

Abstract: A DRAM cell capacitor is described. Capacitor formation and cell isolation methods are integrated by using existing isolation trench sidewalls to form DRAM capacitors. A doped silicon substrate adjacent to the vertical sidewalls of the isolation trench provides one DRAM cell capacitor plate. The DRAM capacitor also contains a dielectric material that partially covers the interior vertical sidewalls of the isolation trench. A conductive layer covering the dielectric material on the vertical sidewalls of the isolation trench forms the second capacitor plate and completes the DRAM capacitor.

Abstract: A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of the layer of low k dielectric material with a plasma to form a layer of densified dielectric material over the remainder of the underlying layer of low k dielectric material, forming a second layer of low k dielectric material over the layer of densified dielectric material, and treating this second layer of low k dielectric material to form a second layer of densified dielectric material over the second layer of low k dielectric material. The layer or layers of densified dielectric material formed from the low k dielectric material provide mechanical support and can then function as etch stop and mask layers for the formation of vias and/or trenches.

Abstract: A package substrate is contemplated herein for reducing cross-talk for noise-sensitive signals. The package substrate includes noise-sensitive conductors adapted to receive the noise-sensitive signals. In one embodiment, the cross-sectional width of the noise-sensitive conductors is increased to reduce certain parasitic effects such as resistance and/or inductance. The package substrate also includes guard conductors which are arranged co-planar with and substantially parallel to the noise-sensitive conductors. A plurality of vias spaced equidistant from one another extends from a ground conductor to the guard conductors, providing a substantially uniform voltage across the guard conductors. The overall effect will reduce the inductive and capacitive cross-talk from neighboring signals and increase the signal integrity of noise-sensitive signals.

Abstract: The present invention provides a comprehensive design environment defining a system architecture and methodology that may integrate interconnects, cores, ePLC, re-configurable processors and software into a manageable and predictable system designs that achieve on-time system IC design results meeting desired specifications and budgets. For example, an interscalable interconnect maybe provided that is scalable and isochronous capable. Additionally, an abstract language may be provided to be able to describe interconnecting core functions. Further, a self-programmable chip may be provided that, upon receiving a construct, it could program itself to achieve the desired functionality, such as through the use of on-chip knowledge and the like.

Abstract: Disclosed is a method for translating a SPICE format circuit description to Verilog format and design method employing Verilog to SPICE and SPICE to Verilog translation, allowing simulation in Verilog or SPICE formats and allowing verification of Verilog to SPICE translation. SPICE to Verilog translation may employ identification of SPICE sub circuits, circuit elements, input signals, and output signals; and translation of these to Verilog format wherein signal names and design hierarchy can be maintained. Circuit element instance names may be translated to Verilog names associated with SPICE instance names. Identification and translated may employ lookup tables, rule sets, specialized filed delimiters, naming conventions, or combinations thereof. An intermediate file of input and output signals may be created. SPICE node names may be converted to Verilog wire definitions.

Abstract: Disclosed is an improved hard macro design for use in an ASIC, which avoids undesirable buildup of electrostatic charge on a gate of an I/O transistor of the hard macro. The hard macro includes a port level metallic conductor of an I/O port positioned at a low level metalization layer and an electrical connection between the port level metallic conductor and a gate conductor of the I/O transistor. The electrical connection includes a first conducting section extending from the gate conductor to a top level metallic conductor at a highest level metalization layer and a second conducting section extending from the top level metallic conductor layer to the port level conductor. Antenna rule violations at the I/O port of the hard macro are eliminated due to the electrical connection between the top level metallic conductor and a diffusion region.

Abstract: A method of forming a layer over a substrate is provided. Generally, a layer of a first reactive species is deposited over the substrate. The layer of the first reactive species is reacted with a second reactive species to create a first product. Unreacted reactive species is preferentially desorbed leaving a layer of the first product.

Abstract: A method of applying a layer of a flowable material to a substrate. The substrate is received with a rotatable chuck, and an amount of the flowable material is dispensed on to the substrate. The substrate is spun on the rotatable chuck, thereby spreading the flowable material across the substrate and conveying a surplus amount of the flowable material away from the substrate. An exhaust stream is created with a vacuum source. At least a portion of the surplus amount of the flowable material conveyed away from the substrate is entrained into the exhaust stream, which exhaust stream is conveyed into an exhaust system. A pressure drop is created in the exhaust stream across a vane anemometer within the exhaust system. The blow back of the entrained portion of the surplus amount of the flowable material from a downstream position in the exhaust system to the substrate is thereby reduced.

Abstract: An apparatus comprising a first circuit, a second circuit and a third circuit is disclosed. The first circuit may be configured to generate a plurality of intermediate signals from a data signal. Each of the intermediate signals may be switchable between (i) a common delay and (ii) one of a plurality of different staggered delays determined by a stagger signal. The a second circuit may be configured to generate a plurality of first drive signals by gating the intermediate signals with a plurality of enable signals. The a third circuit may be configured to generate a plurality of first output signals at a transmit interface of a chip by buffering the first drive signals.

Abstract: A method of detecting spatially correlated variations that may be used for detecting statistical outliers in a production lot of integrated circuits to increase the average service life of the production lot includes measuring a selected parameter of each of a plurality of electronic circuits replicated on a common surface; calculating a difference between a value of the selected parameter at a target location and a value of the selected parameter an identical relative location with respect to the target location for each of the plurality of electronic circuits to generate a distribution of differences; calculating an absolute value of the distribution of differences; and calculating an average of the absolute value of the distribution of differences to generate a representative value for the residual for the identical relative location.