Abstract: A pattern of contacts that includes high speed transmitter contacts disposed in a first portion of the pattern, where the high speed transmitter contacts are disposed in transmitter differential pairs. High speed receiver contacts are disposed in a second portion of the pattern, where the first portion of the pattern is not interspersed with the second portion of the pattern, and the high speed receiver contacts are disposed in receiver differential pairs. At least one unbroken line of other contacts is disposed between the first portion of the pattern and the second portion of the pattern, where the other contacts do not contain any high speed transmitter contacts and high speed receiver contacts. Low speed IO contacts are disposed in a third portion of the pattern, where the third portion of the pattern is disposed in an interior portion of the pattern relative to both the first portion of the pattern and the second portion of the pattern.

Abstract: Design and optimization of NMOS drivers using a self-ballasting ESD protection technique in a fully silicided CMOS process. Silicided NMOS fingers which include segmented drain diffusion. Specifically, the segmented drain diffusion provides self-ballasting resistors which improves the ESD performance. Preferably, the width of the each diffusion resistor is relatively small, as this can improve a non-uniform silicidation process. The resistance of the segmented diffusion resistors is determined by their width and length, and effectively increases the ballasting effect of parasitic n-p-n bipolar transistors.

Abstract: The present invention provides a method of verification of a RRAM tiling netlist. The method may include steps as follows. Properties “memory_number”, “clock_number” and “netlist_part” of all nets and cells of a RRAM tiling netlist are set to a value 0. A boolean value 0 is assigned to all ground nets of the RRAM tiling netlist, and a boolean value 1 is assigned to all power nets of the RRAM tiling netlist. The RRAM tiling netlist is verified for each customer memory Memk, k=1, 2, . . . , N.

Abstract: A gas delivery system for delivering a gas to a reactor. The reactor has a reactor chamber, a gas inlet port, and a gas exhaust port. The gas delivery system included a torch chamber having an outer wall extending along a first axis. A torch injector extends into the torch chamber at a first end of the torch chamber. The torch injector includes at least one gas intake port for receiving at least one gas and a gas injector section for expelling the at least one gas into the torch chamber. A gas outlet section is disposed at a second end of the torch chamber. The gas outlet section includes a first tubing member disposed along a second axis and a gas outlet port connected to the first tubing member. The gas outlet port of the gas outlet section engages the gas inlet port of the reactor. The torch chamber, the torch injector, and the gas outlet section of the gas delivery system are formed into a unitized structure with no resealable connections between them.

Abstract: The present invention is directed to a method and system for disk drive data recovery utilizing CRC information and RAID parity. CRC meta data is compared with either the CRC generated from the data read from the disk drive or the CRC generated from the data reconstructed from the parity drive. If the CRC metadata matches the CRC generated from the data read from the disk drive, the data from the disk drive is accepted as valid. Otherwise, another comparison is made between the CRC generated from data reconstructed from RAID parity and the CRC metadata. If there is a match, the reconstructed data is used as the valid data; otherwise, the data read from the disk drive is used as valid data.

Abstract: A method for creating a reference for a first position on a substrate edge. A first reference point is selected relative to a circumference of the substrate edge, and a second reference point is selected relative to a bevel of the substrate edge. A first distance along the circumference of the substrate edge between the first reference point and the first position is identified as a first coordinate, and a second distance along the bevel of the substrate edge between the second reference point and the first position is identified as a second coordinate. The first coordinate and the second coordinate are used as the reference for the first position.

Abstract: A method of making a packaged electrical device comprises the steps of (a) connecting one end of a wire to a first point (e.g., a first electrical node) in the package, and (b) connecting the other end of the wire to a second point (e.g., a second electrical node) in the package, characterized by (c) causing energy from an external source to heat at least one predetermined segment of the wire to a temperature that is below its melting point (MP) but not below its recrystallization temperature (RCT), and (d) cooling the heated segment to a temperature below its RCT [e.g., to room temperature (RT)], thereby to increase the stiffness modulus of the segment. In one embodiment, the external source is a laser whose optical output is absorbed by the segment. In another embodiment, the heated segment is rapidly cooled (i.e., quenched) to RT.

Abstract: A persistent reservation emulation structure to emulate exclusive reservation SCSI-3 protocol features in a host system having multiple paths to a storage device. An enhanced multiple-path driver layer (or other processing elements) provide emulation of persistent reservation commands directed from a host system to a storage device. The driver does not forward exclusive type reservations to the storage device but rather emulates the desired exclusive operations on the systems behalf using only non-exclusive reservation types. The emulated reservation handling enables parallel use of multiple paths between a host system and a storage device to improve reliability and/or performance of the storage device.

Abstract: A dual damascene interconnect structure is formed by patterning a first dielectric to form a metal line. A second dielectric is disposed on the first dielectric and patterned to form a via. The first metal line is patterned in a configuration relative to a via landing so that a cavity is formed when the via etch into the second dielectric is extended into the first dielectric. The cavity is filled with a conductive metal in an integral manner with the formation of the via to form a via projection for improved electrical contact between the via and the metal line.

Abstract: The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.

Abstract: An integrated circuit includes a phase-locked loop (PLL) in which the loop bandwidth of the PLL is proportional to the input frequency of the PLL. The PLL includes a phase/frequency detector (PFD), a charge pump, a loop filter, and a voltage-controlled oscillator (VCO) that generates the PLL output clock. The VCO includes a current scaling block that scales the sum of a variable current, which is proportional to the loop filter voltage, and a fixed current. The frequency of the PLL output clock is a function of the current output from the current scaling block. Since the same scaling factor is applied to both the fixed current and the variable current, the gain from the loop filter voltage to the PLL output frequency is proportional to the PLL output frequency, and thus the loop bandwidth of the PLL is proportional to the PLL input frequency.

Abstract: An integrated circuit layout is provided, which includes a base platform for an integrated circuit, a processor hardmac and a support memory. The base platform includes a memory matrix having leaf cells arranged in rows and columns. Each column of leaf cells has interface pins that are routed to a common matrix edge and have a common pin order along the matrix edge. The processor hardmac is placed along the memory matrix and has a hardmac edge adjacent the memory matrix edge and a plurality of interface pins for interfacing with corresponding interface pins of the memory matrix. The interface pins of the processor hardmac have the same pin order along the hardmac edge as the interface pins along the matrix edge. The support memory for the processor hardmac is mapped to a portion of the memory matrix along the hardmac edge.

Abstract: An apparatus configured to process a digital video signal comprising an input circuit, a processing circuit and an encoder circuit. The input circuit may be configured to present a digital video signal comprising a plurality of frames. The processing circuit may be configured to detect scene changes in the digital video signal by analyzing (i) a current one of the plurality of frames and (ii) two or more other frames. The encoder circuit may be configured to generate an encoded signal in response to the digital video signal and the scene changes.

Abstract: A frequency reduction or phase shifting circuit has an input receiving an input data stream having an input frequency and a representation of desired output frequency. A splitter splits the input data stream into a plurality of split signals each at a frequency of the desired output frequency. A plurality of catchers identify valid bits of each respective split signal. A shifter shifts valid bits identified by at least some of the catchers by a predetermined number, which establishes a de-serialization level for frequency reduction or phase shifting. An output provides an output data stream at the desired output frequency.

Abstract: The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.

Abstract: A method of determining the distance from an edge feature to a wafer edge. The wafer is put onto an image acquisition tool, and images are captured and classified. Based on the coordinates of the images and their classifications, the distance between an edge feature and the wafer edge is determined. Reference marks can be etched into the wafer to facilitate the measurement. The measurement technique is objective, and can be used to minimize the edge exclusion ring as well as defects that originate from the edge of the wafer.

Abstract: Systems and methods for improving network throughput in a packet ties to network communication environment. In one aspect here of, delays associated with retransmission of a packet or reduced to improve total performance and bandwidth utilization on the communication network medium. A roundtrip time parameter of TCP/IP communications networks may be adjusted according to actual measured response time of a successful packet transmission and used as a timeout value to detect a possible packet loss sooner than previous techniques. Another aspect hereof provides for dynamically adjusting estimated available bandwidth of the communication medium. The estimated available bandwidth is then useful to better avoid congestion on the medium and the resulting packet loss.

Abstract: An apparatus comprising an output circuit, a first processing circuit and a second processing circuit. The output circuit may be configured to generate an output data stream in response to (i) a first intermediate signal, (ii) a second intermediate signal, and (iii) a third intermediate signal. The first processing circuit may be configured to generate the first intermediate signal in response to (i) a processed video signal and (ii) a prediction flag. The second processing circuit may be configured to generate (i) the processed video signal, (ii) the second intermediate signal and (iii) the third intermediate signal in response to an input video signal.

Abstract: A master controller for an RRAM subsystem. An interface communicates with at least one RRAM controller. A main control unit selects and implements test and repair operations on the RRAM subsystem through the RRAM controller. A timer determines a maximum number of test and repair operations that can be implemented within a given time. Thus, a master controller is included in the RRAM subsystem. The master controller has a relatively simple interface, and performs test and repair operations on the RRAM subsystem. The advantages of using the master controller include an elimination of additional test ports, simplification of the process of preparing the test vectors for RRAM testing, and the master controller is able to accumulate test results and initiate repairs based on those results. In this manner, the RRAM subsystem has a self-repair functionality.

Abstract: A test vehicle a system and method for evaluating an interconnect module manufacturing process while dynamically testing performance with high-speed operational frequencies is disclosed. The test vehicle incorporates a self-timed or gated speed circuit that can detect subtle resistive faults and also show the exact location in the array where the speed fault occurred based on test program data logs from scan flip flops. One embodiment incorporates a gated clock in the gated speed circuit producing gated data that delivers greater statistical properties with respect to Integrated Circuit Direct Drain Quiescent Current (IDDQ) testing.