Abstract: The invention describes an LED lighting unit comprising a container with a number of partially reflective side walls; a light exit opening defined by the side walls; and a number of light-emitting diodes arranged in the container to emit light of a first color through the light exit opening during an on-state of the lighting unit; characterized in that the material properties of the partially reflective container side walls are chosen to impart a second non-white color to the container side walls, and to absorb light in at least one specific region of the visible spectrum such that light of the non-white second color exits the lighting unit through the light exit opening during an off-state of the lighting unit. The invention further describes a method of manufacturing such an LED lighting unit.

Abstract: Systems, devices and methods are described herein. A device includes a power stage circuit, a switch and a first circuit. The switch is electrically coupled to the power stage circuit. The first circuit is electrically coupled to the power stage circuit and the switch and has a single output. The first circuit is configured to provide a first circuit output voltage at the single output. The first circuit output voltage has a first level on a condition that the power stage circuit is conducting at a peak current level. The first circuit output voltage has a second level on a condition that the power stage circuit is not conducting.

Abstract: The invention provides a luminescent material comprising wavelength converter nanoparticles (120) with siloxane polymer capping ligands (130) associated to the wavelength converter nanoparticles (120), wherein the siloxane polymer capping ligands (130) comprise siloxane polymers which comprise at least one capping group comprising a terminal carboxylic acid group, wherein the capping group comprises in total at least six carbon atoms.

Abstract: A system and methods for light-emitting diode (LED) devices with a dimming feature that can tailor a color point shift in the light color temperature of a scattering/transparent layer to enlarge a dim to warm range are disclosed herein. A light-emitting device may include a wavelength converting structure configured to receive light from a light emitting semiconductor structure and an adjacent light scattering structure. The light scattering structure may comprise a plurality of scattering particles with a lower refractive index (RI) than the RI of the matrix material in which the scattering particles are disposed. The wavelength converting structure may include a red phosphor and a green phosphor such that to adjust overlap between green emission and absorption by the red phosphor to correspondingly adjust scattering and magnitude of color shift. In an embodiment, the light scattering structure may be integrated in the wavelength converting structure.

Abstract: A lighting strip comprises a flexible printed circuit strip. The flexible printed circuit strip comprises a plurality of wiring portions and a plurality of carrying portions. The plurality of wiring portions are configured to supply electrical power to the plurality of carrying portions. The lighting strip comprises a plurality of solid-state lighting elements respectively disposed on the plurality of carrying portions. The plurality of wiring portions include at least one pitch adjusting portion configured to adjust a pitch between two adjacent carrying portions and to enable the flexible printed circuit strip to be arranged in a three-dimensional shape.

Abstract: Systems are described herein. A system includes a thermally conductive plate and multiple light-emitting devices (LEDs) on a surface of a substrate. The substrate is thermally coupled to the thermally conductive plate and includes first electrical power contacts on the surface. The system also includes an electronics board having second electrical power contacts. The electronics board is on the thermally conductive plate with the first and second electrical power contacts electrically coupled together and the electronics board at least partially covering the surface of the substrate on which the plurality of LEDs is disposed.

Abstract: In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.

Abstract: The invention describes a laser lighting module for a vehicle headlight comprising a laser for emitting laser light, a light conversion device, and a holographic optical device for transforming part of the laser light to first transformed laser light and focusing that on the light conversion device for converting the first transformed laser light to converted light. The holographic optical device is transparent to the converted light, and transforms another part of the laser light to second transformed laser light which is mixed with the converted light after the latter has been transmitted through the holographic optical device. The invention further describes a vehicle headlight comprising at least one such laser lighting module.

Abstract: A light engine is disclosed in which the light engine contains a core comprising an opening extending completely through the core and independently addressable LED segments. The opening defines an inner surface of the core. Each segment has multiple LEDs. A PCB contains a body adjacent to one of an inner or outer surface of the core and to which the LED segments are attached and legs extending from the body and bent to be adjacent and traverse to the other of the inner or outer surface. Each leg is associated with a different LED segment. Control circuitry is connected with the legs of the flexible PCB and independently controls parameters of the LED segments to provide a preset illumination distribution and intensity based on user input.

Abstract: In one embodiment, a semiconductor device wafer (10) contains electrical components and has electrodes (28) on a first side of the device wafer (10). A transparent carrier wafer (30) is bonded to the first side of the device wafer (10) using a bonding material (32) (e.g., a polymer or metal). The second side of the device wafer (10) is then processed, such as thinned, while the carrier wafer (30) provides mechanical support for the device wafer (10). The carrier wafer (30) is then de-bonded from the device wafer (10) by passing a laser beam (46) through the carrier wafer (30), the carrier wafer (30) being substantially transparent to the wavelength of the beam. The beam impinges on the bonding material (32), which absorbs the beam's energy, to break the chemical bonds between the bonding material (32) and the carrier wafer (30). The released carrier wafer (30) is then removed from the device wafer (10), and the residual bonding material is cleaned from the device wafer (10).

Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.

Abstract: A system may include a light source. A converter may be configured to convert an AC voltage to a DC operating voltage during normal operation. A power backup device may be coupled to the converter. A current source may have a first terminal configured to receive the DC operating voltage during regular operation and a second terminal configured to provide a pulse-width modulated (PWM) signal to an anode end of the light source. A switching device may have a first connecting terminal coupled to the anode end of the light source, a second connecting terminal coupled to the power backup device, and a control terminal coupled to the converter. The switching device may be configured to open a switch between the first connecting terminal and the second connecting terminal during normal operation and close the switch upon detecting an interruption of the DC operating voltage at the control terminal.

Abstract: A lighting arrangement includes at least a first and a second LED lighting element arranged next to each other on a carrier surface. The spacer element has, at least in a portion thereof which is in contact with the second LED lighting element, a width which is less than 20% of a width of the first LED lighting element. The first LED lighting element comprises a spacer element projecting into a direction in parallel to the carrier surface. The second LED lighting element is arranged in contact with the spacer element such that it is arranged aligned relative to the first LED lighting element, and such that the first and second LED lighting elements are arranged at a distance forming a gap between the first and second LED lighting elements.

Abstract: A method includes mounting a ceramic phosphor (102) on an acrylic-free and metal-containing catalyst-free tacky layer (108) of a dicing tape (104), dicing the ceramic phosphor (102) from the dicing tape (104) into ceramic phosphor plates (11)2, removing the ceramic phosphor plates (112) from the dicing tape (104), and attaching the ceramic phosphor plates (112) on light-emitting device (LED) dies.

Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Abstract: A lens comprises an elongated shape. The lens has a short axis and a long axis. The lens comprises an upper surface through which a substantial majority of light exits the lens when a light emitting element is situated at or below a base of the lens. The upper surface includes a trough that extends along at least one of the short and the long axis. The upper surface includes a surface of a curved wall that joins the upper surface to the base of the lens. A lower surface of the trough is curved along the short axis and along the long axis. The lower surface of the trough has a curvature along the short axis that differs from a curvature along the long axis.

Abstract: The invention describes a method of analyzing a light distribution of a vehicle headlight. The method determines a cutoff line based on a brightness distribution within a column of an image of the light distribution, the column being perpendicular to a horizon in the image. The method compares the cutoff line with a reference cutoff line and uses the deviations revealed by such comparison to attribute a reduced quality of the light distribution to a particular one of several possible causes. The invention further describes a vehicle headlight analyzer which is arranged to perform the method. The invention finally describes a corresponding computer program product comprising code for executing the method on a processing device.

Abstract: A method comprises forming a mask on a first surface of a substrate. The mask is patterned to form openings on the first surface of the substrate. Notches are formed in the first surface of the substrate in the openings. The mask is removed from the first surface of the substrate A plurality of LEDs are provided on the first surface of the substrate and between notches. A second surface of the substrate is thinned to expose the notches and separate the LEDs. The second surface of the substrate is opposite of the first surface of the substrate.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: A lighting device comprises at least one LED element for emitting light into an emission direction. A bendable light guide is arranged to guide light emitted from the LED element. The bendable light guide comprises at least a first portion formed of an elastic, light transmitting light guide material covering at least the emission direction of the LED element, and a second portion formed of an elastic, light transmitting light guide material. In order to be able to function under varying environmental conditions, the second portion is arranged spaced from the first portion in the emission direction by a separation space.