Abstract: A device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is disclosed. The device comprises a porous region. The device comprises a first layer disposed between the light emitting layer and the porous region. The device comprises a mask layer disposed between the porous region and the first layer. The device comprises a plurality of openings formed in the mask layer.

Abstract: A light-emitting device is disclosed. The light emitting device includes a base, a reflective layer formed on the base, a coating layer formed on the reflective layer, a sidewall disposed on the base, the sidewall being arranged to form a reflector cup, and a light-emitting diode (LED) chip disposed in the reflector cup.

Abstract: A tunable illumination system is disclosed which splits a single channel output into three by means of current steering and/or time division and multiplexing techniques. More particularly, the tunable light system may split the input current into three pulse-width modulated (PWM) channels. The individual duty cycles of the PWM channels may be adjusted based on a control signal that is received via a control signal interface. The control signal interface may include a switch and/or other circuitry that is manipulated by the user when the user wants to change the color of light that is output by the illumination system.

Abstract: The invention describes an array of light sources comprising multiple VCSELs arranged laterally to each other on top of a substrate, wherein each VCSEL comprises a light emitting area surrounded by an electrode structure which does not emit light, wherein a shielding layer is applied on top of at least the electrode structure only covering a surface (of the electrode structure facing towards an average light emitting direction of the VECSELs, the shielding layer is an opaque layer and being adapted to optically match the array in a switched-off state to an outer surface of a housing of a device, where the array of light sources is to be installed. The invention further describes the device comprising such an array and a method for manufacturing an array of light sources.

Abstract: Described is a reflector for light emitting devices. A device includes a reflector in contact with a first n-type region and a second n-type region. The reflector includes multiple layers. One layer having an index of refraction different than the other layers. The device includes a light emitting region (LER) in contact with the second n-type region, a p-type region in contact with the LER and a light extraction region (LXR) in contact with the p-type region. A majority of light escapes the device through the LXR. The reflector reflects light emitted by the LER back towards the LXR. In another device, a reflector is embedded in a n-type region of the device. The device includes a LER, a p-type region, and a wavelength converter structure. The reflector reflects light emitted by the wavelength converting structure back towards the wavelength converting structure.

Abstract: A lighting device and a method of manufacturing a lighting device are described. A lighting device includes a flat carrier that has a front surface and a rear surface opposite the front surface. The flat carrier includes a cutout and multiple carrier-side electrical contacts on the rear surface. A mounting element is provided on the rear surface of the flat carrier and includes multiple mount-side electrical contacts electrically coupled to the multiple carrier-side electrical contacts and an elevated portion projecting into the cutout. Multiple LED elements are provided on the elevated portion of the mounting element and electrically coupled to the mounting element on the same side as the multiple mount-side side electrical contacts. A heat sink element is thermally coupled to the mounting element on a side of said mounting element opposite the flat carrier.

Abstract: A light-emitting device is disclosed, including: a substrate; a light-emitting diode (LED) formed on a first surface of the substrate, the LED being arranged to emit primary light; a fence disposed on a second surface of the substrate, the fence including a plurality of walls arranged to define a cell; a light-converting structure disposed in the cell, the light-converting structure being arranged to convert at least a portion of the primary light to secondary light having a wavelength that is different from the wavelength of the primary light; and a reflective element formed on one or more outer surfaces of the walls of the fence, such that the reflective element and the light-converting structure are disposed on opposite sides of the walls of the fence.

Abstract: An LED device holder, an LED lighting system and a method of manufacturing an LED lighting system are described herein. An LED lighting system includes a holder defining an aperture. The aperture has a perimeter and a fillet adjacent the perimeter. The fillet has a radius greater than or equal to 2.0 mm and less than or equal to 4.6 mm. An LED array is mechanically coupled to the holder. The LED array has a light emitting surface exposed through the aperture.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: In a thin flash module for a camera, a rectangular array of LEDs is mounted on a single lead frame. The lead frame connects the LEDs in series. The LEDs are much smaller than conventional LEDs in a flash module. The LEDs may be in 5×3 array or a 4×3 array, for example. An array of reflective cups is molded over the lead frame or attached to the lead frame, where each of the cups has a substantially square aperture to produce a square sub-beam. A layer of phosphor is located within each cup overlying its associated LED to produce white light. The aspect ratio of the array is selected to generally match the aspect ratio of the camera's field of view (e.g., 16:9). Since the LEDs are very small, the height of the cups may be small to form an ultra-thin flash module. Thin lenses may instead be used.

Abstract: Various embodiments include apparatuses and methods enabling a dim-to-warm circuit operation of an LED multi-colored array. In one example, an apparatus includes a hybrid driving-circuit coupled to the LED array and to a single control-device to receive an indication of a luminous flux desired from the LED array. A color temperature for the LED array is determined based on the desired luminous flux of the LED array. In various embodiments, the hybrid driving-circuit includes an analog current-division circuit to produce current for at least two LED current-driving sources and a multiplexer array coupled between the analog current-division circuit and the LED to provide periodically, for a predetermined amount of time, current from at least one of the at least two LED current-driving sources to at least two colors of the LED array. Other apparatuses and methods are described.

Abstract: A translucent body's first surface is coupled to a top surface of a light converter. The light converter's bottom surface is coupled to a reflective bottom layer. A light coupling structure includes a hole in the reflective bottom layer and at least a slot in the light converter for receiving a light guide, and a light coupling surface for receiving laser light with a laser peak emission wavelength via the light guide. The light coupling surface is arranged so at least 80% of the laser light passing the light coupling surface is received by the translucent body. The translucent body comprises a second surface which is opposite the first surface and is coupled to a reflective top layer for reflecting at least part of the laser light back to the light converter. A peak emission wavelength of the converted light has a longer wavelength than the laser peak emission wavelength.

Abstract: An illumination system is disclosed that is arranged to compensate for variations in brightness between different LEDs in the system. The system may include an array of LEDs coupled to a light guide that is provided with a plurality of light extraction patterns. Each light extraction pattern may include a plurality of light extraction features. The light extraction patterns may differ from one another in the density of the features. Light extraction patterns having a greater density may be combined with LEDs in the array that are less bright, whereas light extraction patterns having a lower feature density may be combined with LEDs in the array that are brighter.

Abstract: A method for allowing a reflective layer to abut against an edge of a metal contact while preventing contamination of a metal contact for an LED die is provided. The method includes encapsulating an electrical contact (i.e. metal contact) via with a barrier layer prior to deposition of a reflective film layer. The barrier layer encapsulates the metal contact by defining a mask pattern with a larger size than the metal contact via, which prevents the metal contact from becoming contaminated by the reflective film. This encapsulation reduces contamination of the metal contact and also reduces the voltage drop during operation of the LED die.

Abstract: Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg—H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.

Abstract: Different wavelength conversion materials, or different concentrations of a wavelength conversion material are used to encapsulate the light emitting elements of different colors of a hybrid light emitting module. In an embodiment of this invention, the light emitting elements of a particular color are encapsulated with a transparent encapsulant, while the light emitting elements of a different color are encapsulated with a wavelength conversion encapsulant. In another embodiment of this invention, a particular set of light emitting elements of different colors is encapsulated with a different encapsulant than another set of light emitting elements.

Abstract: A light emitting diode (LED) light source is disclosed. The LED light source comprises a lens structure that includes a hemispherical dome with a base. The LED light source comprises a cavity in the base. The cavity has an opening and a taper such that a cross-section area within the cavity is smaller than an area of the opening. The LED light source comprises a light emitting device comprising an LED die contacting the taper. The taper allows for easy insertion of the LED die into the lens structure. The taper serves to accurately align the LED die when the LED die is inserted.

Abstract: A device is provided that comprises a metallic substrate defining a plurality of openings, the openings having a first area. The openings form one or more heat dissipating elements having a second area. The device comprises a plurality of sites on a surface of the one or more heat dissipating elements. Each site is configured to receive a light emitting element. The device comprises a plurality of conductor elements having a third area. The conductor elements are physically separated from the one or more heat dissipating elements by the openings. The conductor elements are configured to enable electrical connections to the light emitting elements and are electrically isolated from the one or more heat dissipating elements.

Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Abstract: A light engine is disclosed in which the light engine contains a core having an opening extending completely therethrough and independently addressable LED segments. The opening defines an inner surface of the core. Each segment has LEDs and is attached to a flexible PCB. The PCB has a flexible body attached to one of an inner or outer surface of the core and to which the segments are mounted, and flexible legs extending from the body, along the core, and traverse and adjacent to the other of the inner or outer surface. A light guide plate (LGP) receives and guides light from the segments so that the light exits to provide illumination. The segments emit light in all directions of a plane created by the LGP. A reflector opposes and covers a top surface of the LGP and the segments and reflects light from the LGP back into the LGP.