Abstract: Methods of operating a dimmer switch interface are described. A method includes receiving a dimmer input voltage, providing a dimmer output signal based on the dimmer input voltage, and detecting a voltage level of the dimmer output signal. The voltage level of the dimmer output signal is compared with the threshold. A transformer is intermittently turned off when the voltage level of the dimmer output signal is below the threshold.

Abstract: An electronic device is described. The electronic device includes a body having a first surface and a second surface opposite the first surface. The first surface of the body is a first surface of the electronic the device. The electronic device also has a second surface opposite the first surface. A metal pattern is disposed on the second surface of the electronic device. The metal pattern includes a first electrode, a second electrode, and at least two thermal pads. The at least two thermal pads are electrically isolated from the first electrode and the second electrode, are located along opposite sides of the second surface of the electronic device, and have substantially identical shapes.

Abstract: A thin flash module for a camera uses a flexible circuit as a support surface. A blue GaN-based flip chip LED die is mounted on the flex circuit. The LED die has a thick transparent substrate forming a “top” exit window so at least 40% of the light emitted from the die is side light. A phosphor layer conformally coats the die and a top surface of the flex circuit. A stamped reflector having a knife edge rectangular opening surrounds the die. Curved surfaces extending from the opening reflect the light from the side surfaces to form a generally rectangular beam. A generally rectangular lens is affixed to the top of the reflector. The lens has a generally rectangular convex surface extending toward the die, wherein a beam of light emitted from the lens has a generally rectangular shape corresponding to an aspect ratio of the camera's field of view.

Abstract: A flash system for an electronic device includes a ring-shaped light guide having a central opening. A camera lens is positioned in or behind the opening. A first light emittting diode (“LED”) is mounted on a printed circuit board (“PCB”), and the LED and PCB are encapsulated by a molded light guide of the flash system. An identical LED and PCB are encapsulated at an opposite end of the molded light guide (i.e., 180 degrees away). The back surfaces of each PCB diffusively reflects light from the LED on the other PCB. Light extraction features on the light guide surface uniformly leak out light from the LEDs. The light emission profile of the light guide has a peak axially aligned with the central opening of the light guide and rolls off to the edge of the camera's field of view.

Abstract: Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

Abstract: The invention describes a LED lighting unit comprising a heatsink; an LED module mounted onto the heatsink, which LED module comprises a carrier, a number of LED dies mounted on the carrier, and LED electrode contacts formed on the carrier; an overmould formed to encase the heatsink and to expose the mounting surface region of the heatsink upon which the LED module is mounted; and an electrical interface also encased in the overmould and arranged to electrically connect the LED module to a power supply. The invention further describes a method of manufacturing such an LED lighting unit.

Abstract: Devices and techniques are disclosed herein which include a die including side surfaces such that light emitted from the die can exit through the side surfaces. The die includes a first surface and a second surface opposite the first surface such that the distance between the first surface and the second surface is at least 100 micro meters. The die also include a wavelength converting material deposited external to the die such that the wavelength converting material covers the side surfaces. The wavelength converting material includes phosphor particles, a transparent risen carrier, and transparent particles configured to increase the volume of the wavelength converting material, the transparent particles having a refractive index (RI) that is similar to the RI of the transparent risen carrier.

Abstract: A method for manufacturing a lighting assembly is disclosed, wherein a light emitting diode (LED) element (120) is arranged on a leadframe (110). The LED element (120) is configured to emit light when supplied with electrical power by means of the leadframe (110). At least a portion of the leadframe (110) is provided with an optically reflective and electrically insulating material (130) arranged to reflect light emitted from the LED element (120) and to electrically insulate at least a portion of the leadframe (110). A lighting assembly comprising the LED element (120) and the leadframe (110) is also disclosed.

Abstract: Light emitting devices (LEDs) are described. An LED includes a light emitting semiconductor structure that includes a light emitting active layer disposed between an n-layer and a p-layer. A wavelength converting material may be disposed adjacent the light emitting semiconductor structure. The wavelength converting material includes multiple pores, at least one of which contains a second material. An absolute value of a ratio of a coefficient of thermal expansion of the second material to a coefficient of thermal expansion of the wavelength converting material is at least two in an embodiment, at least ten in another embodiment, at least 100 in another embodiment, and at least 1,000 in yet another embodiment.

Abstract: In some embodiments of the invention, a device includes a semiconductor light emitting device having a first light extraction surface, a wavelength converting element, and a second light extraction surface. A majority of light extracted from the semiconductor light emitting device is extracted from the first light extraction surface. The first light extraction surface has a first area. The second light extraction surface is disposed over the first light extraction surface and has a second area. The first area is larger than the second area.

Abstract: The image capture system of the present disclosure comprises an illuminator comprising at least one infrared light LED or laser and one visible light LED, an image sensor that is sensitive to infrared light and visible light, a memory configured to store instructions, and a processor configured to execute instructions to cause the image capture system to emit infrared light as a pre-flash, receive image data comprising at least one infrared image, and determine infrared exposure settings based on the infrared image data. Although the image capture system of the present disclosure is described as having an illuminator configured to emit infrared light, the illuminator may be configured to emit other invisible light. For example, in an alternate embodiment, the illuminator is configured to emit UV light during pre-flash. In such an embodiment, the image sensor is configured to detect UV light.

Abstract: LED devices and methods of operating LED devices are described. An LED device includes a light-emitting element, a wavelength converting layer and a dichroic mirror. The light-emitting element is configured to emit ultra violet, visible, or ultra violet and visible light. The wavelength converting layer is configured to absorb at least a portion of the light emitted by the light-emitting element and in response emit infrared light. The dichroic mirror transmits the infrared light emitted by the wavelength converting layer, reflects the light emitted by the light emitting element, and is arranged to reflect back into the wavelength converting layer light emitted by the light emitting element, transmitted unabsorbed through the wavelength converting layer, and incident on the dichroic mirror.

Abstract: The image capture system of the present disclosure comprises an illuminator comprising at least one infrared light LED or laser and one visible light LED, an image sensor that is sensitive to infrared light and visible light, a memory configured to store instructions, and a processor configured to execute instructions to cause the image capture system to emit infrared light, receive image data comprising at least one infrared image, and determine depth maps, visible focus settings, or infrared exposure settings based on the infrared image data.

Abstract: A system and methods for light-emitting diode (LED) devices with a dimming feature that can tailor a color point shift in the light color temperature of a scattering/transparent layer to enlarge a dim to warm range are disclosed herein. A light-emitting device may include a wavelength converting structure configured to receive light from a light emitting semiconductor structure and an adjacent light scattering structure. The light scattering structure may comprise a plurality of scattering particles with a lower refractive index (RI) than the RI of the matrix material in which the scattering particles are disposed. The wavelength converting structure may include a red phosphor and a green phosphor such that to adjust overlap between green emission and absorption by the red phosphor to correspondingly adjust scattering and magnitude of color shift. In an embodiment, the light scattering structure may be integrated in the wavelength converting structure.

Abstract: Light emitting devices (LEDs) are described herein. An LED includes a light emitting semiconductor structure, a wavelength converting material and an off state white material. The light emitting semiconductor structure includes a light-emitting active layer disposed between an n-layer and a p-layer. The wavelength converting material has a first surface adjacent the light emitting semiconductor structure and a second surface opposite the first surface. The off state white material is in direct contact with the second surface of the wavelength converting material and includes multiple core-shell particles disposed in an optically functional material. Each of the core-shell particles includes a core material encased in a polymer or inorganic shell. The core material includes a phase change material.

Abstract: An LED package comprising an LED pump die, a phosphor and a dielectric mirror is described. The LED pump die emits light within a first wavelength range. The phosphor encapsulates the LED pump die and has characteristics that convert light within the first wavelength range to light within a second wavelength range, the second wavelength range being higher than the first wavelength range. The dielectric mirror is configured to reflect light within the first wavelength range and transmit light within the second wavelength range. As such, the unconverted light within the first wavelength that is emitted from the LED package is recycled back into the LED package.

Abstract: A device (1) for providing an amount of power to a gas discharge lamp (2) comprises a control circuit (3) for controlling a supply circuit (4) for supplying the power according to a power versus voltage graph (10). A calculator (30) calculates a boundary voltage value as a function of a measured voltage value of a voltage signal that has been measured after a predefined time-interval from a cold start of the gas discharge lamp (2). A more accurate boundary voltage value results in more stability and in less time required to reach a steady state. The calculator (30) may be arranged for calculating the boundary voltage value as a function of a minimum voltage value of the voltage signal and of a steady state voltage value of the voltage signal. A memory (31) may store voltage values of the voltage signal and a processor (32) may update these voltage values.

Abstract: An imaging device comprising an image sensor, an imaging lens, an infrared light source to illuminate a scene, and an infrared autofocus system for providing an autofocus function, wherein the image sensor comprises an array of sensor pixels each arranged as dual pixel comprising two separate pixel sensors per dual pixel to record the image data as a sum signal from both pixel sensors and providing infrared data as individual signals from each of the two pixel sensors for phase contrast autofocusing, wherein an infrared filter arranged between an aperture of the imaging device and an imaging sensor and is adapted to locally transmit only a portion of the infrared light to the imaging sensor by comprising at least one first area arranged as infrared blocking area and at least one second area arranged as infrared bandpass area. The invention further relates to a method to automatically focusing this device.

Abstract: The invention describes an array of light sources comprising multiple VCSELs arranged laterally to each other on top of a substrate, wherein each VCSEL comprises a light emitting area surrounded by an electrode structure which does not emit light, wherein a shielding layer is applied on top of at least the electrode structure only covering a surface (of the electrode structure facing towards an average light emitting direction of the VECSELs, the shielding layer is an opaque layer and being adapted to optically match the array in a switched-off state to an outer surface of a housing of a device, where the array of light sources is to be installed. The invention further describes the device comprising such an array and a method for manufacturing an array of light sources.

Abstract: A method for allowing a reflective layer to abut against an edge of a metal contact while preventing contamination of a metal contact for an LED die is provided. The method includes encapsulating an electrical contact (i.e. metal contact) via with a barrier layer prior to deposition of a reflective film layer. The barrier layer encapsulates the metal contact by defining a mask pattern with a larger size than the metal contact via, which prevents the metal contact from becoming contaminated by the reflective film. This encapsulation reduces contamination of the metal contact and also reduces the voltage drop during operation of the LED die.