Abstract: A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.
Type:
Application
Filed:
January 30, 2020
Publication date:
May 28, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Abstract: An apparatus includes a first directional coupler, a second directional coupler, a first detector, and a second detector. A through port of the first directional coupler is coupled to a through port of the second directional coupler. An isolated port of the first directional coupler is coupled to an isolated port of the second directional coupler. A coupled port of the first directional coupler is coupled to the first detector. A coupled port of the second directional coupler is coupled to the second detector. A detected power signal is generated by combining an output of the first detector and an output of the second detector.
Type:
Grant
Filed:
June 22, 2018
Date of Patent:
May 12, 2020
Assignee:
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Abstract: High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
Type:
Grant
Filed:
July 29, 2016
Date of Patent:
May 12, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Inventors:
Anthony Kaleta, Douglas Carlson, Timothy E. Boles
Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
Type:
Application
Filed:
August 12, 2019
Publication date:
May 7, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Inventors:
Simon John Mahon, Allen W. Hanson, Chuanxin Lian, Frank Gao, Rajesh Baskaran, Bryan Schwitter
Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
Type:
Application
Filed:
August 12, 2019
Publication date:
May 7, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Inventors:
Simon John Mahon, Allen W. Hanson, Bryan Schwitter, Chuanxin Lian, Rajesh Baskaran, Frank Gao
Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Type:
Application
Filed:
May 29, 2019
Publication date:
April 30, 2020
Applicants:
MACOM Technology Solutions Holdings, Inc.
Abstract: Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.
Type:
Grant
Filed:
June 14, 2016
Date of Patent:
April 28, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Abstract: A circuit and method provide a headroom voltage for a laser driver driving a laser diode such that the laser diode provides signals to an optical communications device. The circuit includes a headroom control circuit receiving the headroom voltage from the laser driver, the headroom control circuit generating a controlled voltage based on the headroom voltage, and a DC-DC converter receiving the controlled voltage from the headroom control circuit generating a voltage Vout based on the controlled voltage, and applying the voltage Vout as an input to the laser diode. The headroom control circuit and the DC-DC converter are connected in a feedback loop with the laser diode to continuously provide the voltage Vout to the laser diode, and the DC-DC converter modifies the voltage Vout to compensate for burn-in characteristics or temperature drift of the laser diode over time to maintain an optimized headroom voltage for the laser driver.
Type:
Grant
Filed:
October 4, 2018
Date of Patent:
April 21, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Abstract: High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.
Type:
Grant
Filed:
November 26, 2018
Date of Patent:
April 14, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Inventors:
Timothy E. Boles, Douglas Carlson, Anthony Kaleta
Abstract: Apparatus and methods for a low-load-modulation power amplifier are described. Low-load-modulation power amplifiers can include multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see low modulation of its load between the power amplifier's fully-on and fully backed-off states. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained.
Type:
Application
Filed:
October 4, 2019
Publication date:
April 9, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Abstract: An adaptive CTLE used in a receiver with its zero and/or pole frequencies automatically and continuously adjustable based on an error signal and post-cursors. The error signal is derived from the sliced equalized signal that is output from the CTLE. A correction control signal can be determined based on one or more delayed and sampled data (corresponding to the post-cursors) and the error signal. As controlled by the correction control signal, the CTLE zero/pole frequency setting is then adapted such that the CTLE transfer function causes the error signal to decrease while the post cursor ISI is reduced or eliminated. As a result, effective equalization can be advantageously accomplished in a consistent and fast manner.
Type:
Grant
Filed:
October 4, 2018
Date of Patent:
March 31, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Abstract: A voltage regulator operable to selectively supply an extended range of regulated voltages by using multiple levels of unregulated voltages and a single amplifier. The voltage regulator is coupled to a plurality of passing elements in parallel via enabling switches. Each passing element is configured to receive a respective level of unregulated voltage and, when enabled, can pass current to the voltage regulator and thereby induce a corresponding level of regulated voltage at the output terminal of the voltage regulator. To output a specific regulated voltage, the voltage regulator can operate in a single passing mode in which only the passing element receiving the corresponding unregulated voltage is enabled to pass current. Alternatively, in a parallel passing mode, two or more passing elements receiving different levels of unregulated voltages can be enabled to pass current.
Type:
Grant
Filed:
May 11, 2018
Date of Patent:
March 31, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Abstract: An apparatus includes a first circuit and a second circuit. The first circuit may be configured to inject charge into an I-region of a PIN diode in response to a first state of a control signal. The second circuit may be configured to remove charge from the I-region of the PIN diode in response to a second state of the control signal. A radio frequency switching time of the apparatus is generally about two orders of magnitude lower than a carrier lifetime of the PIN diode.
Type:
Grant
Filed:
February 14, 2019
Date of Patent:
March 17, 2020
Assignee:
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Abstract: A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.
Type:
Grant
Filed:
November 6, 2018
Date of Patent:
March 3, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Abstract: Circuits for protecting devices, such as gallium nitride (GaN) devices, and operating methods thereof are described. Such circuits may include a temperature sensor configured to sense the temperature of at least a portion of a device, and a phase shifter configured to shift the phase of the signal output by the device, when the sensed temperature is outside a safe temperature range, e.g., above a predefined temperature threshold. The phase may be shifted discretely or continuously. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.
Type:
Application
Filed:
June 12, 2019
Publication date:
February 27, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Abstract: Driving circuitry is described that includes multiple programmable bias voltages useful for biasing radio-frequency components such as PIN diodes and gallium-nitride devices. Programmable voltages as high as 30 volts and as low as ?20 volts are generated. The drive circuitry can operate from a single, low-voltage power source.
Type:
Grant
Filed:
November 18, 2016
Date of Patent:
February 11, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Inventors:
Brendan Foley, Michelle Dowling, Chi Mo
Abstract: III-nitride materials are described herein, including material structures comprising III-nitride material regions (e.g., gallium nitride material regions). In certain cases, the material structures also comprise substrates having relatively high electrical conductivities. Certain embodiments include one or more features that reduce the degree to which thermal runaway occurs, which can enhance device performance including at elevated flange temperatures. Some embodiments include one or more features that reduce the degree of capacitive coupling exhibited during operation. For example, in some embodiments, relatively thick III-nitride material regions and/or relatively small ohmic contacts are employed.
Type:
Application
Filed:
July 19, 2018
Publication date:
January 23, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Abstract: High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.
Type:
Grant
Filed:
July 29, 2016
Date of Patent:
January 21, 2020
Assignee:
MACOM Technology Solutions Holdings, Inc.
Inventors:
Timothy E. Boles, Douglas Carlson, Anthony Kaleta
Abstract: Apparatus and methods relating to heterolithic microwave integrated circuits HMICs are described. An HMIC can include different semiconductor devices formed from different semiconductor systems in different regions of a same substrate. An HMIC can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Type:
Application
Filed:
June 4, 2019
Publication date:
January 16, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Abstract: A multi-voltage converter is described that includes integrated temperature-protection circuitry. The converter may be used to bias radio-frequency components such as PIN diodes and gallium-nitride devices, and may include integrated bias-sequencing circuitry. Programmable output voltages as high as 30 volts and as low as ?20 volts may be generated.
Type:
Application
Filed:
March 15, 2019
Publication date:
January 16, 2020
Applicant:
MACOM Technology Solutions Holdings, Inc.
Inventors:
Andrew Patterson, Brendan Foley, Michelle Dowling