Abstract: The invention relates to a multi-axis differential interferometer (1) for measuring a displacement and/or rotation between a first reflective surface (21, 321) and a second reflective surface (81, 381), wherein said measuring is carried out using at least two pairs of beams, wherein each pair is formed by a measurement beam (Mb) to be emitted onto a first one (21, 321) of said reflective surfaces, and a reference beam (Rb) to be emitted onto another one (81, 381) of said reflective surfaces, said interferometer (1) comprising: a first optical module (20) and a second optical module (40), wherein each optical module (20, 40) is configured for receiving a respective coherent beam and for creating one of said pairs therefrom. The invention further relates to a lithography system comprising such an interferometer and to a method for assembling such a multi-axis differential interferometer.

Abstract: A lithography system having one or more lithography elements Each lithography element has a plurality of lithography subsystems. The lithography system further has a control network forming a control network path between the plurality of the lithography subsystems and at least one element control unit for communication of control information. The lithography system is arranged for: issuing control information to the at least one element control unit to control operation of one or more of the lithography subsystems for exposure of one or more wafers; issuing a process program to the element control unit. The process program has a set of predefined commands and associated parameters. The element control unit is arranged to transmit a command of the process program to a lithography subsystem to be executed by the lithography subsystem, regardless of an execution status of a preceding command transmitted to the lithography subsystem.

Abstract: A lithography system (10) comprising a radiation projection system (20) for projecting radiation onto a substrate, a substrate transport system (30) for loading and positioning the substrate to be processed in the path of the projected radiation, a control system (40) for controlling the substrate transport system to move the substrate, and a resist characterization system (50) arranged for determining whether a specific type of resist is suitable to be exposed by radiation within the lithography system. The resist characterization system (50) may be arranged for exposing the resist on a surface of the substrate with one or more radiation beams, measuring a mass distribution of molecular fragments emitted from the resist, predicting a growth rate of deposited molecular fragments on the basis of a growth rate model and the measured mass distribution, and comparing the expected growth rate with a predetermined threshold growth rate.

Abstract: Methods and systems for verification of a mark written on a target surface during a multiple beam lithography process, and for verifying beam position of individual beams on the target surface based on mark verification are disclosed. A mark can be verified by scanning an optical beam over the mark and measuring the reflected optical beam and the position of the target with respect to the optical beam. By comparing the intensity of the reflected light as a function of distance over the mark with reference mark data representing an intended definition of the mark, and any deviation between the measured representation and the reference mark data are determined. If any deviation deviate more than the predetermined limit, incorrectly positioned beams can be verified from the data.

Abstract: The invention relates to an arrangement for transporting radicals. An electron beam system is presented comprising a beamlet generator; a beamlet manipulator (204) comprising an array of apertures; a plasma generator comprising a chamber for forming a plasma, an inlet receiving input gas and outlets removing plasma or radicals created therein, the plasma generator further comprising outlets in flow connection with the plasma chamber outlets; and a hollow guiding body (309b) guiding radicals formed in the plasma towards the array of apertures for removing contaminant deposition. The hollow guiding body (309b) is removably connectable to an extended portion (307b) of the plasma generator outlet. A cover (400) can be placed over a connection between the hollow guiding body (309b) and the extended portion (307b). The extended portion (307b) of the plasma generator outlet and the hollow guiding body (309b) can be similarly formed as a slit.

Abstract: The invention relates to a cathode arrangement comprising: a cathode body housing an emission surface for emitting electrons in a longitudinal direction, wherein the emission surface is bounded by an emission perimeter; a focusing electrode at least partially enclosing the cathode body in a transversal direction and comprising an electron transmission aperture for focusing the electrons emitted by the emission surface, wherein the aperture is bounded by an aperture perimeter, wherein the cathode body is moveably arranged within the focusing electrode over a maximum transversal distance from an aligned position, and wherein the aperture perimeter transversally extends over the emission surface and beyond the emission perimeter over an overlap distance that exceeds the maximum transversal distance.

Abstract: A method for forming an optical fiber array. A substrate having a first surface and an opposing second surface is provided. The substrate is provided with a plurality of apertures extending through the substrate from the first surface to the second surface. In addition, a plurality of fibers are provided. The fibers have fiber ends with a diameter smaller than the smallest diameter of the apertures. A first fiber is inserted in a first corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface. The inserted first fiber is bent in a predetermined direction such that the fiber abuts a side wall of the first aperture at a predetermined position. After the first fiber is bent, a second fiber is inserted in a second corresponding aperture, from the first surface side of the substrate, such that the fiber end is positioned in close proximity of the second surface.

Abstract: A method for processing exposure data (40) for exposing a pattern on a target (30) using a plurality of charged particle beams (24), the exposure data comprising pattern data (42) representing one or more features (60) to be written on the target (30) and exposure dose data (52) describing exposure dose of the charged particle beams.

Abstract: The invention relates to a method of clamping a substrate on a surface of a substrate support structure. First, a liquid is applied on a surface of the substrate support structure. The surface is provided with a plurality of contact elements. The liquid is applied such that the contact elements are fully covered by a liquid layer. Then the substrate is provided and placed onto the liquid layer. Finally, liquid underneath the substrate is removed such that the substrate rests on the plurality of contact elements and is clamped by means of a capillary clamping force exerted by a capillary layer of the liquid between the substrate and the surface of the substrate support structure.

Abstract: The invention relates to a modulation device for modulating charged particle beamlets in accordance with pattern data in a multi-beamlet charged particle lithography system. The device comprises a plate-like body, an array of beamlet deflectors, a plurality of power supply terminals (202-205) for supplying at least two different voltages, a plurality of control circuits, and a conductive slab (201) for supplying electrical power to one or more of the power supply terminals (202-205). The plate-like body is divided into an elongated beam area (51) and an elongated non-beam area (52) positioned with their long edges adjacent to each other. The beamlet deflectors are located in the beam area. The control circuits are located in non-beam area. The conductive slab is connected to the control circuits in the non-beam area. The conductive slab comprises a plurality of thin conductive plates (202-205).

Abstract: The invention relates to a cathode arrangement comprising: a thermionic cathode comprising an emission portion provided with an emission surface for emitting electrons, and a reservoir for holding a material, wherein the material, when heated, releases work function lowering particles that diffuse towards the emission portion and emanate at the emission surface at a first evaporation rate; a focusing electrode comprising a focusing surface for focusing the electrons emitted from the emission surface of the cathode; and an adjustable heat source configured for keeping the focusing surface at a temperature at which accumulation of work function lowering particles on the focusing surface is prevented.

Abstract: The invention relates to a support structure and support module, for instance for use in a lithography system, comprising a frame and a support for supporting a load, wherein said support is moveable relative to said frame, said support structure further comprising a force compensation spring assembly connecting said support to said frame for at least partially supporting said support and/or said load, wherein said force compensation spring assembly comprises a first spring having a negative stiffness characteristic over a predefined range of motion of said spring, and a second spring having a positive stiffness.

Abstract: A capacitive measurement system for generating a measurement signal representative of a measured position or distance to a target.

Abstract: The invention relates to a substrate for use in a lithography system, said substrate being provided with an at least partially reflective position mark comprising an array of structures, the array extending along a longitudinal direction of the mark, characterized in that said structures are arranged for varying a reflection coefficient of the mark along the longitudinal direction, wherein said reflection coefficient is determined for a predetermined wavelength. In an embodiment a specular reflection coefficient varies along the substrate, wherein high order diffractions are substantially absorbed by the substrate. A position of a beam on a substrate can thus be determined based on the intensity of its reflection in the substrate. The invention further relates to a positioning device and lithography system for cooperation with the substrate, and a method of manufacture of the substrate.

Abstract: The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.

Abstract: The invention relates to a lithography system for processing a target, wherein the lithography system comprises a final projection system arranged for projecting a pattern on the target surface. The lithography system comprises a mark position detection system arranged for detecting a position of a position mark on the target surface. The mark position detection system comprises an optical element arranged for projecting a light beam on the target surface and a light detector arranged for detecting a reflected light beam. The optical element may be positioned adjacent to the final projection system and the light detector may be positioned inside a frame.

Abstract: The invention relates to a charged particle system for processing a target surface with at least one charged particle beam. The system comprises an optical column with a beam generator module for generating a plurality of charged particle beams, a beam modulator module for switching on and off said plurality of beams and a beam projector module for projecting beams or subbeams on said target surface. The system further comprises a frame supporting each of said modules in a fixed position and alignment elements for aligning at least one of beams and/or subbeams with a downstream module element.

Abstract: The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.

Abstract: The invention relates to a maskless lithography system for patterning a target using a plurality of charged particle beamlets. The system comprises an electron optical column including a blanker array for modulating the beamlets. The blanker array includes receivers for receiving data signals and blanker elements for modulating the beamlets in accordance with the data signals. The system further comprises a data path comprising a preprocessing system for processing pattern data and a plurality of transmission channels for transmitting processed pattern data to the blanker elements. The data path further comprises a pattern streaming system for receiving pattern data and generating data signals. First and second channel selectors connect a subset of selected transmission channels for pattern data transmission. The first channel selector is connected between the preprocessing system and the transmission channels. The second channel selector is connected between the channels and the blanker elements.

Abstract: The invention relates to a charged-particle multi-beamlet lithography system for transferring a pattern onto the surface of a target. The system comprises a beam generator for generating a plurality of charged particle beamlets, a beamlet blanker array for patterning the beamlets in accordance with a pattern, and a projection system for projecting the patterned beamlets onto the target surface. The blanker array comprises a plurality of modulators and a plurality of light sensitive elements. The light sensitive elements are arranged to receive pattern data carrying light beams and to convert the light beams into electrical signals. The light sensitive elements are electrically connected to one or more modulators for providing the received pattern data. The blanker array is coupled to a fiber fixation substrate which accommodates end sections of a plurality of fibers for providing pattern data carrying light beams as an assembled group with a fixed connection.