Patents Assigned to Materious, LLC
  • Patent number: 8197885
    Abstract: A method for producing a metal article according to one embodiment may include: Providing a supply of a sodium/molybdenum composite metal powder; compacting the sodium/molybdenum composite metal powder under sufficient pressure to form a preformed article; placing the preformed article in a sealed container; raising the temperature of the sealed container to a temperature that is lower than a sintering temperature of molybdenum; and subjecting the sealed container to an isostatic pressure for a time sufficient to increase the density of the article to at least about 90% of theoretical density.
    Type: Grant
    Filed: February 25, 2009
    Date of Patent: June 12, 2012
    Assignee: Climax Engineered Materials, LLC
    Inventors: Dave Honecker, Christopher Michaluk, Carl Cox, James Cole
  • Patent number: 8198120
    Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: June 12, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Jitendra S. Goela, Michael A. Pickering, Neil D. Brown, Angelo Chirafisi, Mark Lefebvre, Jamie L. Triba
  • Publication number: 20120132533
    Abstract: A gold plating bath and a plating method is disclosed where gold cyanide or salts thereof provide the source of gold, a cobalt compound, and a reaction product of compound containing at least a nitrogen-containing heterocyclic compound and an epihalohydrin. The gold plating bath has high deposition selectivity.
    Type: Application
    Filed: November 22, 2011
    Publication date: May 31, 2012
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Koichi YOMOGIDA, Makoto Kondo
  • Publication number: 20120132530
    Abstract: To provide a tin plating solution having uniformity of through-hole plating, uniformity of film thickness distribution and no burn deposits even. The tin plating solution include a tin ion source, at least one non-ionic surfactant, imidazoline dicarboxylate and 1,10-phenanthroline.
    Type: Application
    Filed: October 22, 2011
    Publication date: May 31, 2012
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Shinjiro HAYASHI, Makoto SAKAI, Mutsuko SAITO
  • Patent number: 8188599
    Abstract: A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time.
    Type: Grant
    Filed: February 27, 2007
    Date of Patent: May 29, 2012
    Assignee: Advanced Interconnect Materials, LLC
    Inventor: Junichi Koike
  • Publication number: 20120129104
    Abstract: New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise such PAG compounds are provided.
    Type: Application
    Filed: November 15, 2011
    Publication date: May 24, 2012
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Emad AQAD, Mingqi Li, Cheng-Bai Xu, Cong Liu
  • Publication number: 20120129108
    Abstract: This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.
    Type: Application
    Filed: November 15, 2011
    Publication date: May 24, 2012
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Emad AQAD, Mingqi LI, Cheng-Bai XU, Deyan WANG, Cong LIU, Joon Seok OH, Shintaro YAMADA
  • Publication number: 20120129332
    Abstract: Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.
    Type: Application
    Filed: October 14, 2011
    Publication date: May 24, 2012
    Applicants: Alliance for Sustainable Energy, LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Erik REDDINGTON, Thomas C. Sutter, Lujia Bu, Alexandra Perras, Susan E. Habas, Calvin J. Curtis, Alexander Miedaner, David S. Ginley, Marinus Franciscus Antonius Maria Van Hest
  • Publication number: 20120121977
    Abstract: An anode active material comprising silicon particles with an interfacial layer formed on the surface of the silicon is provided. The interfacial layer has good electron conductivity, elasticity and adhesion among anode materials, thereby enhancing anode capacity and reducing stress caused by expansion of silicon particles during charge and discharge cycles. Direct contact between silicon particles and electrolyte is remarkably reduced as well. In addition, anodes and lithium batteries including the anode active material exhibit excellent capacity and cycle efficiency.
    Type: Application
    Filed: December 27, 2011
    Publication date: May 17, 2012
    Applicant: Electrochemical Materials, LLC
    Inventors: WANLI XU, JOHN C. FLAKE
  • Publication number: 20120122030
    Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
    Type: Application
    Filed: November 15, 2011
    Publication date: May 17, 2012
    Applicants: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Deyan WANG, Cong LIU, Mingqi LI, Joon Seok OH, Cheng-Bai XU, Doris H. KANG, Clark H. CUMMINS, Matthias S. OBER
  • Patent number: 8169079
    Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer and a barrier layer including a metal element and copper, formed between the insulating layer and the interconnection body. An atomic concentration of the metal element in the barrier layer is accumulated toward an outer surface of the barrier layer facing the insulating layer, and an atomic concentration of copper in the barrier layer is accumulated toward an inner surface of the barrier layer facing the interconnection body. The inner surface of the barrier layer comprises copper surface orientation of {111} and {200}, and an intensity of X-ray diffraction peak from the inner surface of the barrier layer is stronger for the {111} peak than for the {200} peak.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: May 1, 2012
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Akihiro Shibatomi
  • Publication number: 20120097548
    Abstract: Stable tin-free palladium catalysts are used to metalize through-holes of printed circuit boards. A stabilizer is included in the catalyst formulation which prevents precipitation and agglomeration of the palladium.
    Type: Application
    Filed: October 21, 2011
    Publication date: April 26, 2012
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Feng LIU, Maria Anna Rzeznik
  • Patent number: 8163649
    Abstract: A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.
    Type: Grant
    Filed: June 24, 2010
    Date of Patent: April 24, 2012
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Akihiro Shibatomi
  • Patent number: 8164701
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: April 24, 2012
    Assignee: Advanced Interconnect Materials, LLC.
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 8158325
    Abstract: Overcoating layer compositions that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.
    Type: Grant
    Filed: October 3, 2006
    Date of Patent: April 17, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deyan Wang, Cheng-Bai Xu
  • Patent number: 8147586
    Abstract: Method for producing molybdenum metal powder. The invention includes introducing a supply of ammonium molybdate precursor material into a furnace in a first direction and introducing a reducing gas into a cooling zone in a second direction opposite to the first direction. The ammonium molybdate precursor material is heated at an initial temperature in the presence of the reducing gas to produce an intermediate product that is heated at a final temperature in the presence of the reducing gas, thereby creating the molybdenum metal powder comprising particles having a surface area to mass ratio of between about 1 m2/g and about 4 m2/g, as determined by BET analysis, and a flowability of between about 29 s/50 g and 86 s/50 g as determined by a Hall Flowmeter. The molybdenum metal powder is moved through the cooling zone.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: April 3, 2012
    Assignee: Climax Engineered Materials, LLC
    Inventors: Loyal M. Johnson, Jr., Sunil Chandra Jha, Patrick Ansel Thompson
  • Publication number: 20120077120
    Abstract: New photoresist compositions are provided that comprise a component that comprises two or more amide groups.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 29, 2012
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Gregory P. PROKOPOWICZ, Gerhard Pohlers, Cong Liu, Chunyi Wu, Cheng-Bae Xu, Joon Seok Oh
  • Patent number: 8142988
    Abstract: Organic coating composition are provided including antireflective coating compositions that can reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing or via-fill layer. Preferred compositions of the invention comprise contain a crosslinker component that is resistant to sublimination or other migration crosslinker from the composition coating layer during lithographic processing.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: March 27, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Anthony Zampini, Edward K. Pavelchek
  • Patent number: 8142639
    Abstract: A hard gold plating solution and plating method which provides a gold plating solution with high deposition selectivity using a gold plating solution containing gold cyanide, cobalt salt, and hexamethylenetetramine.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: March 27, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Masanori Orihashi, Yasushi Takizawa
  • Patent number: 8142637
    Abstract: Compositions and methods for depositing gold alloys are disclosed. The compositions include certain dithiocarboxylic acids, salts and esters thereof and mercapto group containing compounds which provide bright gold alloy deposits with uniform color.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: March 27, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Andre Egli, Wing Kwong Wong, Raymund W. M. Kwok, Jochen Heber