Abstract: A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.

Abstract: A method is provided for implementing a security mechanism in an integrated MEMS (Micro-Electro-Mechanical-System) device having a MEMS sensor with an output register associated with a sensing operation, the integrated MEMS device being electrically coupled to a computing system programmed to perform the method. The method includes, in normal operation, reading from the output register an output of the sensing operation, and in a test mode, determining, by a processor disposed within the computing system, a random value. Determining the random value can include reading from the output register, which in the test mode or provides a value from an internal pattern generator. The method also includes determining, by the processor, a validation value, reading, by the processor, the random value stored in the output register; and determining, by the processor, whether the integrated device is valid using the validation value and the random value stored in the output register.

Abstract: A method for a MEMS device includes receiving a diced wafer having a plurality devices disposed upon an adhesive substrate and having an associated known good device data, removing a first set of devices from the plurality of devices from the adhesive substrate in response to the known good device data, picking and placing a first set of the devices into a plurality of sockets within a testing platform, testing the first set of integrated devices includes while physically stressing the first set of devices, providing electrical power to the first set of devices and receiving electrical response data from the first set of devices, determining a second set of devices from the first set of devices, in response to the electrical response data, picking and placing the second set of devices into a transport tape media.

Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

Abstract: A MEMS rate sensor device. In an embodiment, the sensor device includes a MEMS rate sensor configured overlying a CMOS substrate. The MEMS rate sensor can include a driver set, with four driver elements, and a sensor set, with six sensing elements, configured for 3-axis rotational sensing. This sensor architecture allows low damping in driving masses and high damping in sensing masses, which is ideal for a MEMS rate sensor design. Low driver damping is beneficial to MEMS rate power consumption and performance, with low driving electrical potential to achieve high oscillation amplitude.

Abstract: A method is provided for time synchronization in a MEMS (MicroElectroMecahnical system) based system having a MEMS processor and a plurality of MEMS devices. In a specific embodiment, the method includes, in the MEMS processor, transmitting a synchronization signal to the plurality of MEMS devices and saving a local time upon transmitting the synchronization signal. The MEMS processor also receives sampled data and time information from the plurality of MEMS devices, when the data and information become available. The method also includes, in one or more of the MEMS devices, receiving the synchronization signal from the MEMS processor and storing a local time upon receiving the synchronization signal. The MEMS device also performs a sensing operation and stores sampled sense data and sense time information.

Abstract: A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.

Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.

Abstract: A centrifuge screening system and method of testing MEMS devices using the system. The wafer level centrifuge screening system can include a base centrifuge system and a cassette mounting hub coupled to the base centrifuge system. The method can include applying a smooth and continuous acceleration profile to one or more MEMS components via the base centrifuge system. Each of the one or more MEMS components can have one or more MEMS devices formed thereon. The one or more MEMS components can be provided in one or more cassettes configured on the cassette mounting hub. The method can also include identifying one or more target MEMS components, which can include identifying stiction in one or more MEMS devices on the one or more MEMS components.

Abstract: A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.

Abstract: A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.

Abstract: A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

Abstract: A sensor processor system is provided on a platform including a semiconductor substrate. The system has multiple integrated subsystems including a micro controller unit provided on one or more first regions of the semiconductor substrate. The subsystems also include an array of programmable memory provided on one or more second regions of the semiconductor substrate, among other elements. The subsystems also include one or more MEMS devices operably coupled to the micro controller unit. In one or more embodiments, an application processor is coupled to the semiconductor substrate and, optionally, a baseband processor is coupled to the semiconductor substrate.

Abstract: A portable proximity device and method of operation thereof. The method for proximity detection implemented on a portable device can include determining an initial perturbation data, a tracking point data, and a stable position data with a physical sensor of the portable device. The initial perturbation data can include previous state data and current state data. The tracking point data can include one or more track data. An action to be performed can be determined, by a processor within the portable device, based on the initial perturbation data, the tracking point data, and the stable position data. The portable proximity device can include a physical sensor and a processor configured to perform these steps.

Abstract: A method and device for calibrating a magnetometer device. In an embodiment, the present invention provides a method to automatically calibrate a magnetometer device in the background with only limited movement in each of the three axis (approximately 20 degrees in each direction). A device implementing the present method will never get stuck in a lock-up state. Embodiments of the present invention provide a conservative and accurate magnetometer status indicator that is essential for indoor navigation using inertial sensors. The implemented algorithm is relatively low computationally intensive and is intelligent enough to know when it has the right kind and right amount of magnetic data before it initiates a calibration.

Abstract: A wafer level centrifuge (WLC) system and method of testing MEMS devices using the system. The wafer level centrifuge (WLC) system can include a base centrifuge system and a cassette mounting hub coupled to the base centrifuge system. The method can include applying a smooth and continuous acceleration profile to two or more MEMS wafers via the base centrifuge system. Each of the two or more MEMS wafers can have one or more MEMS devices formed thereon. The two or more MEMS wafers can be provided in two or more wafer holding cassettes configured on the cassette mounting hub. The method can also include identifying one or more target MEMS wafers, which can include identifying stiction in one or more MEMS devices on the one or more MEMS wafers.

Abstract: A system can include a MEMS gyroscope having a MEMS resonator overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. The system incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.

Abstract: A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The method also includes providing a second substrate having a second crystal orientation, forming at least one or more NMOS devices overlying the second substrate, and forming a second dielectric layer overlying the one or more NMOS devices. The method further includes coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

Abstract: A hand-held processor system for processing data from an integrated MEMS (Micro-Electro-Mechanical-Systems) device disposed within a hand-held computer system and methods therefor. The Single Point Offset Correction (SPOC) process computes offset values to calibrate MEMS sensors using a single set of data measurements at an orientation without dynamic perturbation, and without requiring advance knowledge of orientation of the device. Arbitrary output biases, which are known to be dominant on a single axis, can be corrected to ensure consistent performance. The SPOC process provides a simple method to effectively calibrate a MEMS sensor without requiring extensive system resources. This process can be enhanced by additional estimations of sensor offsets using the set of data measurements or by use of rule-based empirical gain factors.