Abstract: A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

Abstract: A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.

Abstract: An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices.

Abstract: A method and structure for fabricating sensor(s) or electronic device(s) using vertical mounting is presented. The method includes providing a substrate having a surface region and forming sensor(s) or electronic device(s) on a first region overlying the surface region. At least one bond pad structure can be formed from at least one trench structure. The resulting device can then be singulated within a vicinity of the bond pad structure(s) to form at least one integrated sensor or electronic devices having at least one vertical bond pad. At least one singulated device(s) can be coupled to a package, having a package surface region, such that the vertical bond pad(s) are configured horizontally, and at least one interconnection can be formed between the vertical bond pad(s) and at least one portion of the package surface region.

Abstract: A method and structure for a three-axis magnetic field sensing device is provided. The device includes a substrate, an IC layer, and preferably three magnetic field sensors coupled to the IC layer. A nickel-iron magnetic field concentrator is also provided.

Abstract: A computer implemented method for initiating capture of an image on a computer system, performed by the computer system that is programmed to perform the method includes determining by a physical sensor of the computer system, a change in physical state of the computer system, wherein the change in physical state is associated with a magnitude of change in physical state, determining by the computer system, whether the magnitude of change in physical state by the physical sensor exceeds a threshold level, determining by the computer system, a plurality of parameters for a camera associated with the computer system, and initiating by the computer system, capture of one or more images using the camera after the magnitude of change in physical state by the physical sensor exceeds the threshold level.

Abstract: A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.

Abstract: A three-dimensional integrated circuit device includes a first substrate having a first crystal orientation comprising at least one or more PMOS devices thereon and a first dielectric layer overlying the one or more PMOS devices. The three-dimensional integrated circuit device also includes a second substrate having a second crystal orientation comprising at least one or more NMOS devices thereon; and a second dielectric layer overlying the one or more NMOS devices. An interface region couples the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

Abstract: Methods and structure for adapting MEMS structures to form electrical interconnections for integrated circuits. A first portion and a second portion of the metal conductor, which can be electrically isolated within a CMOS IC device, can be etched to form an unetched portion of the metal conductor. The MEMS device can be patterned, from a MEMS layer formed overlying the metal conductor, via a plasma etching process, during which the unetched portion of the metal conductor is protected from the plasma. The metal conductor can be electrically coupled to the CMOS IC device via a conductive jumper or the like. Furthermore, the integrated CMOS-MEMS device can include a MEMS device coupled to a CMOS IC device via an electrically isolated metal conductor within the CMOS IC device. Also, the metal conductor can be electrically coupled to the substrate of the CMOS IC device via a conductive jumper.

Abstract: A computer implemented method for performing a user-defined function in a computer system, performed by the computer system that is programmed to perform the method includes determining by a display a display position in response to a change and a rate change in state of a user-controlled user input device, determining by a physical sensor a magnitude of change in sensed physical in response to the rate of change in the state, determining whether the magnitude of change exceeds a threshold level, determining a function to perform in response to display position when magnitude of change in sensed physical properties exceeds the threshold level, initiating performance of the function in response to the function, and inhibiting performance of the function when the magnitude of change in sensed physical properties does not exceed the threshold level.

Abstract: An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices.

Abstract: A hand-held processor system for processing data from an integrated MEMS (Micro-Electro-Mechanical-Systems) device disposed within a hand-held computer system and methods therefor. The Dynamic Temperature Correction (DTC) process computes offset values to calibrate MEMS sensors using a single set of data measurements at an orientation without dynamic perturbation and one or more temperature data measurements, and without requiring advance knowledge of orientation of the device. Arbitrary output biases, which are known to be dominant on a single axis, can be corrected to ensure consistent performance. The DTC process provides a simple method to effectively calibrate a MEMS sensor without requiring extensive system resources. This process can be enhanced by additional estimations of sensor offsets using the set of data measurements or by use of rule-based empirical gain factors.

Abstract: An improved MEMS transducer apparatus and method. The method includes providing a movable base structure having a base surface region overlying a substrate and a center cavity with a cavity surface region. At least one center anchor structure and one spring structure can be spatially disposed within a substantially circular portion of the surface region. The spring structure(s) can be coupled the center anchor structure(s) to a portion of the cavity surface region. The substantially circular portion can be configured within a vicinity of the center of the surface region. At least one capacitor element, having a fixed and a movable capacitor element, can be spatially disposed within a vicinity of the cavity surface region. The fixed capacitor element(s) can be coupled to the center anchor structure(s) and the movable capacitor element(s) can be spatially disposed on a portion of the cavity surface region.

Abstract: A hand-held processor system for processing data from an integrated MEMS (Micro-Electro-Mechanical-Systems) device disposed within a hand-held computer system and methods therefor. The Single Point Offset Correction (SPOC) process computes offset values to calibrate MEMS sensors using a single set of data measurements at an orientation without dynamic perturbation, and without requiring advance knowledge of orientation of the device. Arbitrary output biases, which are known to be dominant on a single axis, can be corrected to ensure consistent performance. The SPOC process provides a simple method to effectively calibrate a MEMS sensor without requiring extensive system resources. This process can be enhanced by additional estimations of sensor offsets using the set of data measurements or by use of rule-based empirical gain factors.

Abstract: A monolithic integrated electronic device includes a substrate having a surface region and one or more integrated micro electro-mechanical systems and electronic devices provided on a first region overlying the surface region. Each of the integrated micro electro-mechanical systems and electronic devices has one or more contact regions. The first region has a first surface region. One or more trench structures are disposed within one or more portions of the first region. A passivation material overlies the first region and the one or more trench structures. A conduction material overlies the passivation material, the one or more trench structures, and one or more of the contact regions. The device also has one or more edge bond pad structures within a vicinity of the one or more bond pad structures, which are formed by a singulation process within a vicinity of the one or more bond pad structures.

Abstract: An integrated inertial sensing device. The device includes a substrate member. The device also has a first inertial sensing device comprising at least a first material and configured to detect at least a first direction. The device has a second inertial sensing device comprising at least the first material and configured to detect at least a second direction. The device also has a third inertial sensing device comprising at least a quartz material and configured to detect at least a third direction. The three devices can be integrated to form an integrated inertial sensing device.

Abstract: The present invention is related shielding integrated devices using CMOS fabrication techniques to form an encapsulation with cavity. The integrated circuits are completed first using standard IC processes. A wafer-level hermetic encapsulation is applied to form a cavity above the sensitive portion of the circuits using IC-foundry compatible processes. The encapsulation and cavity provide a hermetic inert environment that shields the sensitive circuits from EM interference, noise, moisture, gas, and corrosion from the outside environment.

Abstract: An improved MEMS transducer apparatus and method. The apparatus has a movable base structure including an outer surface region and an inner surface region. At least one central anchor structure can be spatially disposed within a vicinity of the inner surface region and at least one peripheral anchor structure can be spatially disposed within a vicinity of the outer surface region. Additionally, the apparatus can have at least one peripheral spring structure. The peripheral spring structure(s) can be coupled to the peripheral anchor structure(s) and at least one portion of the outer surface region. The apparatus can also have at least one central spring structure. The central spring structure(s) can be operably coupled to the central anchor structure(s) and at least one portion of the inner surface region.

Abstract: An improved MEMS transducer apparatus and method is provided. The apparatus includes a movable base structure having a base surface region. An anchor structure is disposed within a substantially circular portion of the surface region typically at or near the center of the surface region. A spring structure is coupled to the anchor structure and at least one portion of the base surface region. A capacitor, having a fixed capacitor element and a movable capacitor element, are disposed near the base surface region. The fixed capacitor element can be coupled to the anchor structure and the movable capacitor element can be spatially disposed on a portion of the base surface region near the anchor structure.

Abstract: A computer-implemented method for reducing extraneous input in a portable device programmed to perform the method includes displaying with the portable device a text entry interface via a display to a user of the portable device, receiving with the portable device one or more taps on a portion of the portable device other than the display, wherein the one or more taps is associated with a first action, while displaying with the portable device, an interface other than a text entry interface via the display to the user, the method includes performing with the portable device the first action in response to the one or more taps, and while displaying with the portable device, a text entry interface via the display to the user, the method includes inhibiting with the portable device the first action in response to the one or more taps.