Abstract: Teachings of the present disclosure include systems and/or methods for encoding digital data into a handwritten sample. An example method includes: accessing a predetermined vibration pattern stored in a memory corresponding to defined data; and vibrating a stylus based on the predetermined vibration pattern during creation of the handwritten sample to encode the defined data into the handwriting sample.

Abstract: A High-Electron-Mobility-Transistor comprising an upper insulating layer formed over a third buffer layer formed over a third barrier layer formed over a second buffer layer formed over a second barrier layer formed over a first buffer layer formed over a first barrier layer formed over a first doped structure and formed over a substrate. A second doped structure formed within the third barrier layer. A first gate electrode connected to the first doped structure. A second gate electrode connected to the second doped structure. A drain terminal formed at a first side of the first gate electrode. A source terminal formed at a second side of the first gate electrode.

Abstract: An apparatus, system, and method for incorporating monitoring systems, e.g., smoke detectors, in pre-existing devices, e.g., a garage door opener, light switch, or electric outlet is disclosed. The apparatus may include an interface to a hazard detector. The hazard detector may have dimensions that fit substantially within a fixture installed in a wall or a ceiling of a building and attached to the fixture such that the hazard detector is contained substantially within the fixture, the fixture to serve a purpose unrelated to hazard detection. The apparatus may also include a control circuit. The control circuit may be configured to receive a signal from the hazard detector via the interface. The control circuit may also be configured to detect an unsafe condition based on the signal. The control circuit may further be to raise an alarm in response to the unsafe condition.

Abstract: A method of detecting an over-programming of a memory cell during a write operation in a non-volatile memory media of a solid-state drive, and a solid-state drive with over-programming detection. When data is written to the states of the memory cell, a current last bit is routinely or selectively checked to detect an over-programming condition of the current state. An over-programming verification level may be used to check the current last bit and may be between zero and twenty-five millivolts lower than a regular programming verification level for a next first bit of the next state. When the over-programming condition is not detected, the program operation continues to write data to the next state. When the over-programming condition is detected, either the over-programmed current last bit is identified and the program operation is adjusted, or a memory block in which the over-programmed current last bit is located is retired.

Abstract: An apparatus comprises a computing device including one or more processors, multiple peripheral communication devices of different communication protocol types operably connected to the one or more processors, and a memory to store processor-executable instructions of an application layer protocol stack. The processor-executable instructions are adapted such that, when executed by the one or more processors, cause the one or more processors to perform operations for respective ones of secure communication sessions to be established with respective destination devices via respective ones of the multiple peripheral communication devices. The operations comprise establishing the respective ones of secure communication sessions with the respective destination devices via the respective ones of the multiple peripheral communication devices according to an exchange of messages of a mutual authentication and key exchange protocol that is common to the multiple peripheral communication devices.

Abstract: A method for distress signal monitoring with EMS and public notification in crowded public spaces. The method includes receiving a distress signal from a first personal device in a crowded public space; locating the first personal device closest to an EMS unit indicating that a user of the first personal device is in distress; transmitting a location of the first personal device to the EMS unit; identifying a second personal device proximate to the first personal device; and transmitting a notification signal to the second personal device indicating that a person is in distress.

Abstract: Examples disclosed herein relate generally to providing frames at a network port. Some examples relate to an apparatus. The apparatus may include a network port to directly couple the apparatus to a switch. The apparatus may also include a transmission logic to provide a frame at the network port at a time slot of a switch-associated cycle time. The transmission logic may provide the frame at the time slot at least partially responsive to an offset value and a port number. Related devices, systems and methods are also disclosed.

Abstract: A High-Electron-Mobility-Transistor comprising an upper insulating layer formed over a second buffer layer formed over a second barrier layer formed over a first buffer layer formed over a first barrier layer formed over a first doped structure and formed over a substrate. A second doped structure formed within the second barrier layer. A first gate electrode connected to the first doped structure. A second gate electrode connected to the second doped structure. A drain terminal formed at a first side of the first gate electrode. A source terminal formed at a second side of the first gate electrode.

Abstract: A system and method for an automated interfacing system for docking a mobility aid with target platforms are disclosed. The method may include detecting, by a mobility aid equipped with a plurality of antennas, a presence of a target platform equipped with an antenna. The method may also include establishing a connection between the mobility aid and the target platform. The method may further include determining a relative position and an orientation between the mobility aid and the target platform. The method may be to generating a docking route to the target platform based on the determined relative position and orientation.

Abstract: A data storage system includes, a memory device including a virtual block, non-transitory computer readable media storing instructions thereon, and at least one processor. The instructions, when executed by the at least one processor, cause the at least one processor to: measure a program temperature associated with the virtual block; measure a read temperature associated with the virtual block; determine, based at least in part on the measured program temperature and the measured read temperature, a cross-temperature condition; and based on the determined cross-temperature condition, determine an adjusted voltage. The adjusted voltage includes one or more of: an adjusted pass through voltage, an adjusted bit line bias voltage, or an adjusted source line voltage.

Abstract: A Schottky barrier diode (SBD) comprises a volume of semiconductor material presenting opposite first and second ends, a plurality of laterally spaced pockets of doped material extending into the volume of semiconductor material adjacent the first end, a Schottky layer located adjacent the first end between the pockets of doped material of doped material, and a silicide layer located adjacent each pocket of doped material.

Abstract: A semiconductor device including a volume of semiconductor material, an integrated metal-oxide semiconductor field-effect transistor (MOSFET), and an integrated Schottky barrier diode (SBD). The volume of semiconductor material presents laterally spaced first and second sides and a trench extending from the first end and being spaced between the sides. The MOSFET includes a split gate comprising a first gate section located adjacent the first end and a laterally spaced apart second gate section located adjacent the first end, and a gate oxide underlying the first and second gate sections. The SBD is located within the trench. The SBD includes a Schottky metal.

Abstract: A data storage device with adjustable power credit allocation, and a method of providing adjustable power credit allocation in a data storage device. The device includes a non-volatile memory media and a controller. Relevant operating conditions are quantified, including a number of program/erase cycles completed by the memory media and a temperature of the controller. Recommended power credit numbers are determined for relevant commands, including read, write, and erase, based on the quantified operating conditions. The power credit allocation for the data storage device is adjusted based on the determined recommended power credit numbers. More or fewer program/erase cycles may result in, respectively, raising or lowering the power credit allocation. Higher or lower temperatures may result in, respectively, lowering or raising the power credit allocation. The controller may adjust the power credit allocation based on the plurality of recommended power credit numbers using a look-up table or using a formula.

Abstract: A Schottky barrier diode (SBD) includes a volume of semiconductor material, a plurality of laterally spaced pockets of doped material, and a silicon layer. The volume of semiconductor material presents opposite first and second ends. The plurality of laterally spaced pockets of doped material extend into the volume of semiconductor material adjacent the first end. The silicon layer is located adjacent the first end between the pockets of doped material.

Abstract: A trench MOSFET with a trench bottom oxide thickness that is equal to or greater than a trench sidewall oxide thickness, and a method of making the same. A trench, including a sidewall and a bottom, is created in a semiconductor material. A first bottom thickness of a gate oxide is deposited on the bottom, and a first sidewall thickness of the gate oxide is deposited on the sidewall. The first sidewall thickness is removed, leaving the first bottom thickness. A second sidewall thickness is grown on the sidewall of the trench, and a second bottom thickness is grown on top of the first bottom thickness. The first and second bottom thicknesses of the gate oxide form a total bottom thickness that is at least equal to the second sidewall thickness, and may be between one (1) and two (2) times greater than the second sidewall thickness.

Abstract: An apparatus includes a control circuit to connect to an audio device of a safety system. The safety system is to detect a hazardous condition. The audio device is to alert a user of the hazardous condition. The safety system is to include a sensor to sense the hazardous condition. The apparatus includes an interface to connect the control circuit to the audio device. The control circuit is to determine whether to clean a housing of the sensor and, based on a determination to clean the housing of sensor, cause the audio device to vibrate or issue sound waves at an inaudible frequency.

Abstract: An apparatus may have a detector configured to fit substantially within a utility box installed in a cavity of a ceiling or a wall in a room, a wiring assembly configured to couple the detector to a power source, and an attachment assembly configured to attach the detector to the utility box, wherein the detector may be recessed within the utility box when attached to the utility box.

Abstract: A system, and method for automatically updating configuration or software information on a device without a connection to a central server are disclosed. A first device may include a memory of the first device to store a first configuration. The first device may also include a timer to indicate an age of the first configuration stored in the memory. The first device may further include a control circuit of the first device. The control circuit may be configured to determine, based on the age of the first configuration, that the first device has golden unit status and broadcast a status that the first device is a golden unit. The control circuit may additionally be configured to establish a communication channel between the first device and a second device. The control circuit may further be configured to transfer the first configuration from the first device to the second device.

Abstract: One or more examples relate to an apparatus to amplify differential voltage signal components of voltage across a resistor. Such an apparatus may include a resistor; a differential amplification circuit operatively coupled with the resistor to amplify a differential voltage signal component of a voltage across the resistor; and an operative coupling between the resistor and the differential amplification circuit to pass the differential voltage signal component and isolate a common mode voltage signal component of the voltage across the resistor.

Abstract: An apparatus comprises an upstream hub port, a plurality of downstream hub ports, a hub controller, a device response memory accessible to the hub controller, and a routing system connecting (a) the upstream hub port to the plurality of downstream hub ports and (b) respective downstream hub ports to the hub controller. The routing system to communicate device responses from respective downstream hub ports to the hub controller. The hub controller includes hub controller circuitry to identify specified device data in a respective device response received from a respective downstream hub port, and store the specified device data in the device response memory.