Abstract: Examples described herein include systems and methods which include wireless devices and systems with examples of cross correlation including symbols indicative of radio frequency (RF) energy. An electronic device including a statistic calculator may be configured to calculate a statistic including the cross-correlation of the symbols. The electronic device may include a comparator configured to provide a signal indicative of a presence or absence of a wireless communication signal in the particular portion of the wireless spectrum based on a comparison of the statistic with a threshold. A decoder/precoder may be configured to receive the signal indicative of the presence or absence of the wireless communication signal and to decode the symbols responsive to a signal indicative of the presence of the wireless communication signal. Examples of systems and methods described herein may facilitate the processing of data for wireless communications in a power-efficient and time-efficient manner.

Abstract: Memories might include an array of memory cells having a plurality of strings of series-connected memory cells and a controller configured to cause to memory to access a first string of series-connected memory cells of the plurality of strings of series-connected memory cells in a first mode of operation for volatile storage of data to the first string of series-connected memory cells, and access a second string of series-connected memory cells of the plurality of strings of series-connected memory cells in a second mode of operation for non-volatile storage of respective data to each memory cell of a plurality of memory cells of the second string of series-connected memory cells

Abstract: Apparatuses and methods including circuits in gap regions of a memory array are disclosed. An example apparatus includes first and second memory mats adjacent along a first direction, and further includes a region between the first and second memory mats along the first direction. The region includes a local input/output (LIO) line that extends along a second direction perpendicular to the first direction through the region, and further includes a LIO driver and a LIO precharge circuit coupled to the LIO line. The LIO driver is configured to drive the LIO line to data voltage levels based on data read from memory cells or based on data to be written to memory cells, and the LIO precharge circuit is configured to provide a LIO precharge voltage to the LIO lines.

Abstract: Described apparatuses and methods facilitate sharing redundant memory portions at a controller-level to enable memory repair between two or more memory blocks. Each memory die of multiple memory dies can include, for instance, multiple spare rows for use if a row of a memory array has a faulty bit. If a memory die has more faults than spare rows, the memory die cannot repair the additional faults. This document describes a controller that can inventory unrepaired faults and available spare rows across multiple memory dies. The controller can then “borrow” a spare row from a second memory die that has an available one and “share” the spare row with a first memory die that has a fault than it cannot repair. The controller can remap a memory access request targeting the row with the unrepaired fault in the first memory die to a spare row in the second memory die.

Abstract: Apparatuses, systems, and methods for enhanced metadata information. The memory array includes a number of column planes and an extra column plane. A memory device is set in an ×4 single-pass operational mode. In this mode, the memory may store a data codeword in a selected ones of the column planes, and metadata may be stored in a non-selected ones of the column planes and in the extra column plane. An error correction code circuit (ECC) may store parity bits associated with the data and metadata in the non-selected ones of the column planes. In this manner, the data, metadata, and parity may be accessed as part of a single access of the memory array.

Abstract: Examples of systems and method described herein or generating, in a memory controller and/or memory device, access codes for memory regions of the memory device using authentication logic, and for accessing the memory device using the access codes. For example, a memory controller and/or a coupled memory device may generate access codes that a host computing device may include in a memory access request to access one or more memory regions of the memory device. Data read or written at the memory device may in some examples only be accessed in accordance with the access codes for memory regions of the memory device. Accordingly, the systems and methods described herein may provide security for specific memory regions of a memory device because the access code are updated periodically (e.g., based on obtained reset indication) or in accordance with an updated count value from a counter.

Abstract: Apparatuses and techniques for implementing shareable usage-based disturbance circuitry are described. Shareable usage-based disturbance circuitry includes circuits (e.g., shared circuits) that manage usage-based disturbance across at least two sections of a bank of memory within a die of a memory device. In example implementations, the shareable usage-based disturbance circuitry includes a counter circuit and/or an error-correction-code circuit that is coupled to sense amplifiers associated with two neighboring sections. With the shareable usage-based disturbance circuitry, dies within the memory device can be cheaper to manufacture, can consume less power, and can have a smaller footprint with less complex signal routing compared to other dies with other circuits dedicated to mitigating usage-based disturbance within each section.

Abstract: Methods, systems, and devices for electron beam probing techniques and related structures are described to enable inline testing of memory device structures. Conductive loops may be formed, some of which may be grounded and others of which may be electrically floating in accordance with a predetermined pattern. The loops may be scanned with an electron beam and image analysis techniques may be used to generate an optical pattern. The generated optical pattern may be compared to an expected optical pattern, which may be based on the predetermined pattern of grounded and floating loops. An electrical defect may be determined based on any difference between the generated optical pattern and the expected optical pattern. For example, if a second loop appears as having a brightness corresponding to a grounded loop, this may indicate that an unintended short exists. Fabrication techniques may be adjusted for subsequent devices to correct identified defects.

Abstract: Methods, systems, and devices for improved implicit ordered command handling are described. For instance, a memory device may receive, from a host device, a first command and a second command. The memory device may determine whether a first memory operation associated with the first command and a second memory operation associated with the second command are to be performed in an order relative to each other based on a first time when the first command is received relative to a second time when the second command is received. The memory device may select whether to perform a first memory access procedure or a second memory access procedure based on whether the first memory operation and the second memory operation are a same type of memory operation and on whether the first memory operation and the second memory operation are to be performed in the order relative to each other.

Abstract: Various embodiments described herein provide a label configured for thermal conductivity and configured to pass over an edge of a printed circuit board (PCB) and attached to both sides of the printed circuit board. The label can be used with a printed circuit board that is associated with a memory sub-system, such as a memory module (e.g., solid state drive, SSD module).

Abstract: An image or a spectrum of a surface may be acquired by a computing device, which may be included in a mobile device in some examples. The computing device may extract a measured spectrum from the image and generate a corrected spectrum of the surface. In some examples, the corrected spectrum may be generated to compensate for ambient light influence. The corrected spectrum may be analyzed to provide a result, such as a diagnosis or a product recommendation. In some examples, the result is based, at least in part, on a comparison of the corrected spectrum to reference spectra. In some examples, the result is based, at least in part, on an inference of a machine learning model.

Abstract: A memory system includes a memory device and a processing device, operatively coupled to the memory device. The processing device performs operations comprising: identifying one or more mandatory scan wordlines of the memory device and one or more remaining wordlines of the memory device; performing a plurality of scan iterations with respect to a plurality of pages of the memory device, such that performing each scan iteration comprises: identifying, among the remaining wordlines, one or more scheduled scan wordlines of the memory device, scanning a subset of pages of the memory device that are addressable by the mandatory scan wordlines and the scheduled scan wordlines; wherein a combination of a first plurality of pages addressable by the scheduled scan wordlines selected by the plurality of scan iterations and a second plurality of pages addressable by the mandatory wordlines comprises the plurality of pages of the memory device.

Abstract: Exemplary methods, apparatuses, and systems including a device health manager for managing health of a memory device. The device health manager identifies a memory device having a service life. The device health manager receives multiple requests to perform one or more computing operations. The device health manager predicts, using a machine learning model, an adjustment of the service life of the memory device using the health data. The device health manager generates a notification including the adjustment of the service life.

Abstract: Memory with efficient storage of event log data is disclosed herein. In one embodiment, a memory device includes a non-volatile memory subsystem storing a persistent event log file, and a volatile memory subsystem including a working buffer. The memory device is configured to write newly generated event log data of the memory device to the working buffer. The memory device is further configured to write the newly generated first event log data to a first subregion of the persistent event log file. The first subregion can be one of a plurality of subregions of the persistent event log file, and can correspond to an end of event log data stored to the persistent event log file. The volatile memory subsystem can be positioned inside or outside a controller operably connected to the non-volatile memory subsystem.

Abstract: Managed units (MUs) of data can be stored on a memory device according to a slice-based layout. A slice of the slice-based layout can include a plurality of stripes, each of the stripes including respective partitions and respective MUs of data. A subset of the stripes each include a quantity of partitions and a first quantity of MUs of data. Another subset of the stripes each include a lesser quantity of partitions and a lesser quantity of MUs of data.

Abstract: A system includes a memory device having a plurality of data blocks and a processing device, the processing device to perform operations identifying an erase operation being performed on a first portion of a plurality of data blocks. The operations further include determining a first rate of performance of the erase operation being performed on the first portion of the plurality of data blocks, identifying a write operation being performed on a second portion of the plurality of data blocks, and determining a second rate of performance of the write operation being performed on the second portion of the plurality of data blocks. The operations further include determining whether the second rate of performance corresponds to the first rate of performance and responsive to the second rate of performance not corresponding to the first rate of performance, adjusting the second rate of performance.

Abstract: Methods, systems, and devices for storing parity during refresh operations are described. In some examples, refresh operations may be performed on a memory device when the memory device is idle. For example, a refresh operation may entail performing a logical operation on first data and a first set of parity bits and second data and a second set of parity bits. The logical operation may generate a third set of parity bits which may be used for data retention purposes. Moreover, during a read operation, the third set of parity bits may be used to recover corrupt or otherwise invalid data in the event of an error.

Abstract: Methods, systems, and devices for resuming write operation after suspension are described. A memory system may be configured to determine an upper limit of a threshold voltage of a page of a block at which a performance of a write operation was suspended based at least in part on an indication to resume the performance of the write operation that was previously suspended at a memory system; determine a difference between a first quantity of a first logic state stored in the page and a second quantity of the first logic state associated with an unsuspended write operation based at least in part on determining the upper limit of the threshold voltage; and resume the performance of the write operation based at least in part on determining the difference between the first quantity of the first logic state and the second quantity of the first logic state.

Abstract: Implementations described herein relate to memory devices including a single-level cell (SLC) block storing data for migration to multiple multi-level cell (MLC) blocks. In some implementations, a memory device includes multiple MLC blocks that include MLCs, with each MLC being capable of storing at least four bits of data, and multiple SLC blocks that can store data prior to the data being written to one of the MLC blocks. Each SLC block may be capable of storing different data sets that are destined for storage in different MLC blocks. The memory device may include a mapping component that can store a mapping table that includes multiple entries, in which an entry indicates a mapping between a memory location in the SLC blocks and a corresponding MLC block for which data stored in the memory location is destined. Numerous other implementations are described.

Abstract: Methods, systems, and devices for chalcogenide memory device compositions are described. A memory cell may use a chalcogenide material having a composition as described herein as a storage materials, a selector materials, or as a self-selecting storage material. A chalcogenide material as described herein may include a sulfurous component, which may be completely sulfur (S) or may be a combination of sulfur and one or more other elements, such as selenium (Se). In addition to the sulfurous component, the chalcogenide material may further include one or more other elements, such as germanium (Ge), at least one Group-III element, or arsenic (As).