Abstract: A scaling factor for a data unit of a memory device is obtained. The scaling factor corresponds to a difference between a first error rate associated with a first set of memory access operations performed at the data unit and a second error rate associated with a second set of memory access operations performed at the data unit. A media management operation is scheduled on the data unit in view of the scaling factor.

Abstract: Methods, systems, and devices for temperature monitoring for memory devices are described for monitoring one or more temperature ranges experienced by a memory device. The memory device may include monitoring circuitry or logic that may identify one or more durations of operating the memory device within the one or more temperature ranges. The memory device may store an indication of the one or more durations, or an indication of information associated with the one or more durations. The indication may be accessed a host device associated with the memory device or may be transmitted by the memory device to the host device. The host device may use information included in the indication to perform an operation associated with the memory device.

Abstract: An automaton is implemented in a state machine engine. The automaton is configured to observe data from a beginning of an input data stream until a point when an end of data (EOD) signal is seen. Additionally the automaton is configured to report an event only when one and only one occurrence of a target symbol is seen in the input data stream.

Abstract: A memory controller may calculate a sum of a first number of entries stored in a read buffer and a second number of entries stored in a write buffer. If the sum is less than a first threshold and the read/write buffer is not full of entries, then the memory controller can request read/write commands from a host computing device. If the sum is not less than the first threshold or the read/write buffer is full of entries, then the memory controller can assert backpressure to stop the incoming flow newly incoming read/write commands from the host computing device. Additionally, or alternatively, the memory controller may dequeue a write command entry only if a number of write command entries stored in a write command FIFO memory is greater than a second threshold.

Abstract: A device includes a match element that includes a first data input configured to receive a first result, wherein the first result is of an analysis performed on at least a portion of a data stream by an element of a state machine. The match element also includes a second data input configured to receive a second result, wherein the second result is of an analysis performed on at least a portion of the data stream by another element of the state machine. The match element further includes an output configured to selectively provide the first result or the second result.

Abstract: Methods, systems, and devices for assigning blocks of memory systems are described. Some memory systems may be configured to initiate an operation to characterize a plurality of blocks of a memory system; identify a first quantity of complete blocks of the plurality of blocks and a second quantity of reduced blocks of the plurality of blocks based at least in part on initiating the operation; determine, for a block of the second quantity of reduced blocks, whether a quantity of planes available for use to store the information in the block satisfies a threshold; and assign the block as a special function block configured to store data associated with a function of the memory system based at least in part on determining that the quantity of planes available for use to store the information in the block of the second quantity of reduced blocks satisfies the threshold.

Abstract: An average number of program erase cycles (PECs) for a memory device is identified. A set of trims associated with the average number of PECs is identified. One or more write trims associated with the memory device are set according to the set of trims. A write command directed to the memory device is received. The write command is executed according to the one or more write trims.

Abstract: A memory system having memory components, a remote direct memory access (RDMA) network interface card (RNIC), and a host system, and configured to: allocate a page of virtual memory for an application; map the page of virtual memory to a page of physical memory in the memory components; instruct the RNIC to perform an RDMA operation; perform, during the RDMA operation, a data transfer between the page of physical memory in the plurality of memory components and a remote device that is connected via a computer network to the remote direct memory access network interface card; and at least for a duration of the data transfer, lock a mapping between the page of virtual memory and the page of physical memory in the memory components.

Abstract: A method performed by a processing device receives a plurality of write operation requests, where each of the write operation requests specifies a respective one of the memory units, identifies one or more operating characteristic values, where each operating characteristic value reflects one or more memory access operations performed on a memory device, and determines whether the operating characteristic values satisfy one or more threshold criteria. Responsive to determining that the operating characteristic values satisfy the one or more threshold criteria, the method performs a plurality of write operations, where each of the write operations writes data to the respective one of the memory units, and performs a multiple-read scan operation subsequent to the plurality of write operations, where the multiple-read scan operation reads data from each of the memory units.

Abstract: An indication to perform a write operation at a memory component can be received. A voltage pulse can be applied to a destination block of the memory component to store data of the write operation, the voltage pulse being at a first voltage level associated with a programmed state. An erase operation for the destination block can be performed to change the voltage state of the memory cell from the programmed state to a second voltage state associated with an erased state. A write operation can be performed to write the data to the destination block upon changing the voltage state of the memory cell to the second voltage state.

Abstract: Methods, systems, and devices for purging data from a memory device are described. A memory system may receive, from a host system, a command to write data to an address storing an encryption key in a first portion of the memory system that is configured to store secure information (e.g., a Replay Protected Memory Block). The encryption key may be configured to encrypt data associated with the host system that is stored in a second portion of the memory system. The memory system may then receive an indication of a purge command from the host system. The memory system may execute the purge command by transferring data from the first portion of the memory system to a third portion of the memory system configured to store secure information and erasing the data from the first portion of the memory system.

Abstract: A microelectronic device having a stack structure with an alternating sequence of conductive material and insulative material arranged in tiers, and having blocks separated by dielectric slot structures. Each of the blocks has a stadium structure, a filled trench overlying the stadium structure, support structures extending through the filled trench and tiers of the stack structure, and dielectric liner structures covering sidewalls of the support structures. The stadium structure has staircase structures each having steps with edges of the tiers of the stack structure. The filled trench has a dielectric material interposed between at least two additional dielectric materials. The dielectric liner structures have first protrusions at vertical positions of the dielectric material, and second protrusions at vertical positions of the conductive material of the tiers of the stack structure. The second protrusions have greater horizontal dimensions that the first protrusions.

Abstract: Apparatuses, methods, and systems for generating patterns for memory using threshold voltage difference are disclosed. An embodiment includes circuitry and a memory array including a plurality of memory cells. The circuitry can select a group of memory cells from the plurality of memory cells, program each memory cell of the group to a first data state, determine a first threshold voltage of each memory cell of the group, program each memory cell of the group to a second data state, perform a number of snapback events on each memory cell of the group, program each memory cell of the group to the first data state, determine a second threshold voltage of each memory cell of the group having the first data state, and generate a pattern for the memory array based, at least in part, on a difference between the first threshold voltage and the second threshold voltage.

Abstract: An apparatus that includes a first conductive pattern positioned at a first wiring layer and extending in a first direction, a second conductive pattern positioned at a second wiring layer located above the first wiring layer and extending in a second direction, and a contact plug connecting the first conductive pattern with the second conductive pattern. The contact plug includes a lower conductive section contacting the first conductive pattern and an upper conductive section contacting the second conductive pattern. The width of the lower conductive section on a first boundary between the lower and upper conductive sections in the first direction is greater than the width of the upper conductive section on the first boundary in the first direction and the width of the second conductive pattern on a second boundary between the contact plug and the second conductive pattern in the first direction.

Abstract: An apparatus that includes a semiconductor substrate having first and second gate trenches arranged in parallel and extending in a first direction, and first and second gate electrodes embedded in the first and second gate trenches, respectively, via a gate insulating film. Each of the first and second gate electrodes includes a first conductive film located at a bottom of the respective first and second gate trenches and a second conductive film stacked on the first conductive film. The second conductive film included in a first portion of the second gate electrode is thinner than the second conductive film included in a first portion of the first gate electrode which is arranged adjacently to the first portion of the second gate electrode in a second direction crossing to the first direction. The second conductive film is lower in work function than the first conductive film.

Abstract: Memory devices might include an array of memory cells and a controller configured to access the array of memory cells. The controller might be further configured to receive a command to perform an erase operation and in response to the command to perform the erase operation, begin execution of the erase operation. The controller might be further configured to while executing the erase operation, receive a command to perform a program operation; in response to the command to perform the program operation, suspend the execution of the erase operation; and with the execution of the erase operation suspended, execute the program operation.

Abstract: A method includes receiving a request for an allocation of memory resources based on quality of service (QoS) parameters. The method further includes provisioning, via a QoS manager component, a plurality of physical functions to provide the requested allocation of resources. At least two of the plurality of physical functions can be provided to meet a QoS criteria.

Abstract: Methods and apparatuses associated with surface cleaning are described. Examples can include detecting at a processing resource of a robot and via a temperature sensor of the robot, a temperature of a surface on which the robot is located. Examples can include the processing resource shutting down the robot in response to the temperature being at or above a particular threshold temperature, and the processing resource instructing the robot to clean the surface following a particular cleaning path using a vacuum, a scrubber, or both in response to the temperature being below a particular threshold temperature.

Abstract: A technique to control write operations in a logical partition. For example, a device can receive a user specified write threshold for the logical partition that is hosted on a pool of memory cells shared by a plurality of logical partitions in wear leveling. An accumulated amount of data written into the memory cells according to write requests addressing the logical partition is tracked. In response to the accumulated amount reaches the write threshold, further write requests addressing the logical partition can be blocked, rejected, and/or ignored. For example, the logical partition can be used to buffer data for time shift in playing back content streaming from a server. Write operations for time shift can be limited via the user specified threshold to prevent overuse of the total program erasure budget of the pool of memory cells shared with other logical partitions.

Abstract: Methods, systems, and devices for opportunistic data movement are described. A memory device may include a non-volatile memory and a volatile memory that operates as a cache for the non-volatile memory. The memory device may receive a write command from a host device. The write command may be associated with a row of a bank in a volatile memory. The memory device may write data associated with the write command to a buffer that is associated with the bank and that is coupled with the volatile memory. And the memory device may communicate the data from the buffer to the volatile memory based on the write command and before a pre-charge command for the row of the bank is received from the host device.