Abstract: Apparatuses for timing control in a write path are disclosed. An example apparatus includes: a clock input circuit that receives a clock signal and provides an internal clock signal; a command decoder that receives command signals and the internal clock signal, and provides an active write command signal when the command signals indicates a write operation; a write latency shifter that receives the write command signal, a latency value and a WICA value, adjusts timing of the write command signal responsive to the latency value and the WICA value, and provides a shifted write command signal; and a write DLL including a delay line that receives the shifted write command signal and provides a delayed write command signal. The write DLL provides the WICA value to set a propagation time from the clock input circuit to the write DLL to be a multiple of a period of the clock signal.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple to conductor material of the conductor tier. Below the stack, an insulating tier is directly above the conductor tier and a metal-material tier is directly above the insulating tier. Conductive rings extend through the metal-material tier and the insulating tier to conductor material of the conductor tier. The conductive rings individually are around individual horizontal locations directly above which are individual of the channel-material strings. The channel-material strings directly electrically couple to the conductor material of the conductor tier through the insulating tier by the conductive rings.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a lower portion of a stack that will comprise vertically-alternating conductive tiers and insulative tiers. The stack comprises laterally-spaced memory-block regions. The lower portion comprises multiple lower of the conductive tiers and multiple lower of the insulative tiers. The lower insulative tiers comprise insulative material. The lower conductive tiers comprise sacrificial material that is of different composition from that of the insulative material. The sacrificial material is replaced with conducting material. After the replacing of the sacrificial material, the vertically-alternating conductive tiers and insulative tiers of an upper portion of the stack are formed above the lower portion. The upper portion comprises multiple upper of the conductive tiers and multiple upper of the insulative tiers. The upper insulative tiers comprise insulating material.

Abstract: In some implementations, an extended reality (XR) device may detect, using a camera of the XR device, a clothing item, wherein the clothing item is associated with an identifier. The XR device may transmit, to a server, a request that indicates the identifier. The XR device may receive, from the server, metadata associated with the clothing item, wherein the metadata is associated with the identifier. The XR device may retrieve, from the server, a three-dimensional model of a user associated with the XR device. The XR device may generate a three-dimensional model of the user wearing the clothing item using the three-dimensional model of the user and the metadata. The XR device may provide, via an interface of the XR device, the three-dimensional model of the user wearing the clothing item.

Abstract: Methods, systems, and devices for techniques for indicating a write link error are described. The method may include a memory device receiving, from a host device, a write command, data, and a first set of error control bits for the data. The memory device may determine that the data includes an uncorrectable error using the first set of error control bits and generate a second set of error control bits for the data based on determining that the data includes the uncorrectable error. Further, the method may include the memory device storing the data and the second set of error control bits in a memory device and transmitting, to the host device, the data and an indication that the data received from the host device included the uncorrectable error based on the second set of error control bits.

Abstract: Methods, systems, and devices for dynamic low power mode are described. An apparatus may include a memory device and a controller. The controller may receive a command to transition from a first power state to a second power state, the first power state associated with executing received command and the second power state associated with deactivating one or more components of the memory device. The controller may execute, while in the first power state, a set of operations associated with the transition from the first power state to second power state. The controller may determine whether a duration to execute the set of operations satisfies a delay duration between receiving the command and transitioning to the second power state from the first power state. The controller may transition from the first power state to the second power state based on determining whether the duration satisfies the delay duration.

Abstract: Disclosed in some examples are systems, methods, devices, and machine-readable mediums to detect and terminate programmable atomic transactions that are stuck in an infinite loop. In order to detect and terminate these transactions, the programmable atomic unit may use an instruction counter that increments each time an instruction is executed during execution of a programmable atomic transaction. If the instruction counter meets or exceeds a threshold instruction execution limit without reaching the termination instruction, the programmable atomic transaction may be terminated, all resources used (e.g., memory locks) may be freed, and a response may be sent to a calling processor.

Abstract: Devices and techniques for thread scheduling control and memory splitting in a processor are described herein. An apparatus includes a hardware interface configured to receive a first request to execute a first thread, the first request including an indication of a workload; and processing circuitry configured to: determine the workload to produce a metric based at least in part on the indication; compare the metric with a threshold to determine that the metric is beyond the threshold; divide, based at least in part on the comparison, the workload into a set of sub-workloads consisting of predefined number of equal parts from the workload; create a second request to execute a second thread, the second request including a first member of the set of sub-workloads; and process a second member of the set of sub-workloads in the first thread.

Abstract: Apparatuses and methods for coupling semiconductor devices are disclosed. In a group of semiconductor devices (e.g., a stack of semiconductor devices), a signal is provided to a point of coupling at an intermediate semiconductor device of the group, and the signal is propagated away from the point of coupling over different (e.g., opposite) signal paths to other semiconductor devices of the group. Loading from the point of coupling at the intermediate semiconductor device to other semiconductor devices of a group may be more balanced than, for example, having a point of coupling at semiconductor device at an end of the group (e.g., a lowest semiconductor device of a stack, a highest semiconductor device of the stack, etc.) and providing a signal therefrom. The more balanced topology may reduce a timing difference between when signals arrive at each of the semiconductor devices.

Abstract: Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

Abstract: In some implementations, a memory device may detect a first read failure associated with a page type and a memory section of the memory device. The memory device may perform multiple read recovery operations in a first order defined by a first sequence of read recovery operations. The memory device may identify a read recovery operation that results in successful recovery from the first read failure. The memory device may reorder the first sequence of read recovery operations to generate a second sequence of read recovery operations that prioritizes the read recovery operation. The memory device may detect a second read failure associated with the page type and the memory section. The memory device may perform one or more read recovery operations to recover from the second read failure in a second order defined by the second sequence of read recovery operations.

Abstract: A microelectronic device includes tiers of alternating dielectric and conductive materials, a cap oxide material vertically adjacent to the tiers, and pillars extending vertically through the tiers. The cap oxide material is formulated to exhibit a different etch rate relative to an etch rate of the oxide material of the tiers. Additional microelectronic devices, microelectronic systems, and methods of forming a microelectronic device are also disclosed.

Abstract: A front-end firmware component of a memory sub-system receives a first request to perform a first set of initialization operations and initiates a first set of initialization operations for the front-end component in parallel with initiating a second set of initialization operations for a back-end component. Responsive to completing the first set of initialization operations, the front-end component sends a first notification to a host computer system to indicate that the front-end component is available to respond to requests for configuration data associated with the memory sub-system, receives a second request from the host computer system for a configuration data associated with the memory sub-system, and responsive to receiving the second request from the host computer system before the back-end component has completed the second set of initialization operations, provides the configuration data to the host computer system.

Abstract: The disclosed embodiments are related to securely updating a semiconductor device and in particular to a key management system. In one embodiment, a method is disclosed comprising receiving a request for an activation code database from a remote computing device, the request including at least one parameter; retrieving at least one pair based on the at least one parameter, the pair including a unique ID (UID) and secret key; generating an activation code for the UID; and returning the activation code to the remote computing device.

Abstract: In some implementations, a host processor associated with a vehicle may select, from a plurality of devices that are configured to communicate with the host processor for performing security functions, a first device to serve as a primary device and a second device to serve as a secondary device. The first device may include a first memory with an embedded hardware security module and may be associated with a first set of nodes of the vehicle. The second device may include a second memory with an embedded hardware security module and may be associated with a second set of nodes of the vehicle. The host processor may determine, based on a signal, a failure associated with the first device or the second device. The host processor may initiate a remediation process based on the failure associated with the first device or the second device. Numerous other implementations are described.

Abstract: The disclosed embodiments are related to storing critical data in a memory device such as Flash or DRAM memory device. In one embodiment, a device comprising a plurality of parallel processors is disclosed, the plurality of parallel processors configured to: perform a search and match operation, the search and match operation loading a plurality of synaptic identifier bit strings and a plurality of spike identifier bit strings, the search and match operation further generating a plurality of bitmasks; perform a synaptic integration phase, the synaptic integration phase generating a plurality of synaptic current vectors based on the plurality of bitmasks, the synaptic current vectors associated with respective synthetic neurons; solve a neural membrane equation for each of the synthetic neurons; and update membrane potentials associated with the synthetic neurons, the membrane potentials stored in a memory device.

Abstract: Methods, systems, and devices for techniques for generating a shared secret for an electronic system are described. A memory system may identify an initial key pair and exchange a public key of the key pair with a public key associated with a server. The memory system and the server may each generate a shared secret. In some cases, the memory system and the server may use the shared secret to generate a device identifier for the memory system, for example by incorporating the device identifier into a cryptographic representation of a software layer of the memory system. The memory system and the server may use the device identifier to generate one or more asymmetric key pairs, which may be used by the server to authenticate the memory system.

Abstract: Aspects of the present disclosure configure a system component, such as memory sub-system controller, to perform empty page scan operations. The controller selects a portion of the set of memory components that is empty and ready to be programmed. The controller reads one or more signals from the selected portion of the set of memory components. The controller generates an error count value representing whether the portion of the set of memory components is valid for programming based on a result of reading the one or more signals from the selected portion. The controller updates a scan frequency for performing the empty page scan operations for the portion of the set of memory components based on the error count value.

Abstract: Systems and methods for a semiconductor device having a front-end-of-line structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor substrate material and a front side, and an interconnect structure extending through the dielectric material. The interconnect structure may be electrically connected to a semiconductor memory array proximate the front side of the dielectric material. The semiconductor device may further have an insulating material encasing at least a portion of the semiconductor memory array and an opening created during back-end-of-line processing through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.

Abstract: Methods and apparatuses for thin film transistors and related fabrication techniques are described. The thin film transistors may access two or more decks of memory cells disposed in a cross-point architecture. The fabrication techniques may use one or more patterns of vias formed at a top layer of a composite stack, which may facilitate building the thin film transistors within the composite stack while using a reduced number of processing steps. Different configurations of the thin film transistors may be built using the fabrication techniques by utilizing different groups of the vias. Further, circuits and components of a memory device (e.g., decoder circuitry, interconnects between aspects of one or more memory arrays) may be constructed using the thin film transistors as described herein along with related via-based fabrication techniques.