Abstract: A deferred error correction code (ECC) scheme for memory devices is disclosed. In one embodiment, a method is disclosed comprising starting a deferred period of operation of a memory system in response to detecting the satisfaction of a condition; receiving an operation during the deferred period, the operation comprising a read or write operation access one or more memory banks of the memory system; deferring ECC operations for the operation; executing the operation; detecting an end of the deferred period of operation; and executing the ECC operations after the end of the deferred period.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a memory access request specifying a logical address of a data item and a memory access operation to be performed with respect to the data item; produce a truncated logical address by applying a predefined mathematical transformation to the specified logical address; identifying, in an address translation table, an address translation table entry identified by the truncated logical address; and perform the memory access operation using a physical address specified by the address translation table entry.

Abstract: Methods, apparatuses and systems related to managing deck-specific read levels are described. The apparatus may include a memory array having the memory cells organized into two or more decks. The apparatus can determine a delay between programming the decks. The apparatus can derive and implement the deck-specific read levels by selectively adjusting a base read level with an offset level according to the delay and/or the targeted read location.

Abstract: Methods, systems, and devices for status check using signaling are described. A memory system may receive ready signals from memory dies. The ready signal may indicate whether a memory die is available to receive a command. The memory system may generate an indicator of whether the memory die is available based on values of ready signals. The memory system may output the indicator to a controller over one or more pins based on generating the indicator.

Abstract: An example method of performing read operation with respect to a memory device comprises: receiving a request to perform a read operation with respect to a memory page of a memory device; identifying a block family associated with a block comprising the memory page; determining a block family-based read voltage level associated with the block family; performing, using the block family-based read voltage level, a read operation with respect to the memory page; determining, by performing an error correction operation with respect to the memory page, a new read voltage level associated with the block family; and associating, by a last successful read voltage level memory data structure, the new read voltage level as a last the successful read voltage level with the block family.

Abstract: Methods, systems, and devices for separate cores for media management of a memory sub-system are described. A controller of a memory sub-system can include a first processing core and a second processing core for a garbage collection procedure. The first processing core can perform a first set of one or more operations associated with a read process of a first stage of a garbage collection procedure for a plurality of transfer units of the memory sub-system. The second processing core can perform a second set of one or more operations associated with a write process of the first stage of the garbage collection procedure, where the second set of one or more operations are concurrent with the first set of one or more operations.

Abstract: Implementations described herein relate to memory device operations for unaligned write operations. In some implementations, a memory device may receive, from a host device, a write command indicating data having a first size that corresponds to a first write unit and a first logical address. The memory device may allocate a set of buffers for the write command. The memory device may determine a set of physical addresses corresponding to a physical address that is associated with the second size, where the set of physical addresses are each associated with the first size. The memory device may merge stored data from the set of physical addresses to one or more buffers, from the set of buffers, that do not include the data to generate a data unit having the second size. The memory device may write the data unit to memory indicated by the set of physical addresses.

Abstract: A computing system having memory components, including first memory and second memory. The computing system further includes a processing device, operatively coupled with the memory components, to: store a memory allocation value in association with a context of executing instructions; execute a set of instructions in the context; allocate, for execution of the set of instructions in the context, an amount of memory, including an amount of the first memory and an amount of the second memory; and access the amount of the second memory via the amount of the first memory during the execution of the set of instructions in the context.

Abstract: Systems, apparatuses, and methods related to channel architecture for memory devices are described. Various applications can access data from a memory device via a plurality of channels. The channels can be selectively enabled or disabled based on the behavior of the applications. For instance, an apparatus in the form of a memory system can include an interface coupled to a controller and a plurality of channels. The controller can be configured to determine an aggregate amount of bandwidth used by a plurality of applications accessing data from a memory device coupled to the controller via the plurality of channels and disable one or more channels of the plurality of channels based, at least in part, on the aggregate amount of bandwidth used by the plurality of applications.

Abstract: Components of sense amplifiers may share contacts that couple the components to a global line via a local line. In some examples, the components may be pull-down circuits of a same sense amplifier or pull-down circuits of adjacent sense amplifiers. The shared contact may include a transistor or a resistance between the local line and the global line. In some examples, the global line may be an RNL line. The transistor or resistance may reduce the impact of voltage across the components from affecting the global line and/or reduce the impact of voltage changes on the global line on the individual components.

Abstract: A memory system includes a memory device comprising a content addressable memory (CAM) block storing a plurality of stored search keys and a value data block. The memory system further includes a processing device that receives an input search key and identifies one of the plurality of stored search keys that matches the input search key, the one of the plurality of stored search keys having an associated match location in the CAM block. The processing device further determines, using the associated match location, a corresponding value location in the value data block and retrieves, from the value location in the value data block, data representing a value associated with the input search key.

Abstract: A microelectronic device comprises a conductive line and a transistor adjacent to the conductive line. The transistor comprises a channel material extending into the conductive line, the channel material contacting the conductive line in three dimensions, a dielectric material adjacent to the channel material, a conductive material adjacent to the dielectric material, and a passivation material adjacent to the channel material. The microelectronic device further comprises a conductive contact adjacent to the channel material, the conductive contact including a portion extending between opposing portions of the channel material. Related microelectronic devices, electronic devices, and related methods are also disclosed.

Abstract: A timing of an execution of a command in a memory device can be affected delay elements. The delay elements of a unit of delay elements can cause variable delays of the command paths. The delay elements can be activated based on settings stored in a fuse array of a memory device. The delay elements can be used to change a timing of current draw of the memory devices.

Abstract: Methods, systems, and devices for host verification for a memory device are described. A memory device may receive a first value from a host device that is associated with an identification of the host device after an event. The memory device may transmit a second value to the host device that is based on the first value and comprises a random set of bits. The memory device may receive from the host device data or a command that comprises an encrypted third value that is based at least in part on the second value and a secret shared between the host device and the memory device. The memory device may also enable a functionality of the memory device based on the encrypted third value.

Abstract: An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

Abstract: Methods, systems, and devices for techniques for managed NAND translation with embedded memory systems are described. A host system may generate a first command to access a logical memory address associated with a memory system. The host system may identify a physical memory address of the memory system based on generating the first command. The host system may output to the memory system a second command and the physical memory address, where the second command may be communicated to the memory device using a protocol associated with a controller of the memory system. The memory system may then access memory cells in a memory device associated with the physical memory address based on receiving the second command and the physical memory address.

Abstract: Methods, systems, and devices for error protection for managed memory devices are described. In some examples, a memory system may receive data units from a host device. The data units may include respective sets of parity bits, and the memory system may perform an error detection operation on the data units. A first controller of the memory system may generate a protocol unit using data (e.g., a subset of data) from the data units. The protocol unit may include a set of parity bits (e.g., a different set of parity bits), and a second controller of the memory system may perform an error detection operation on the protocol unit. The second controller of the memory system may generate a data storage unit using data (e.g., a subset of data) from the protocol unit, and may store the data unit and another set of parity bits to a memory device.

Abstract: Provided is a computing system including a memory system in communication with a host, to store data therein. The memory system includes a memory having a plurality of memory components coupled to the controller via a memory interface; and a memory controller configured to communicate with the memory to control data transmission and performing scrubbing operation of the memory components and detecting a region of the memory to be sanitized and performing a sanitization operation of the detected region to prevent the occurrence of failure.

Abstract: A system includes a memory array; and a processing device coupled to the memory array. The processing device may be configured to iteratively adjust an active processing level, wherein, for each iteration, the processing device is configured to: determine a first set of read results corresponding to the active processing level, determine a second set of read results based on an offset processing level different than the active processing level, and incrementally adjust the active processing level based on a comparison of the first and the second read results.

Abstract: Implementations described herein relate to burst data read storage. In some implementations, a controller may receive a write command. The controller may determine whether a burst read flag, included in the write command, is set. The controller may write host data, associated with the write command, to a first type of storage block of the memory device or to a second type of storage block of the memory device based on whether the burst read flag is set.