Abstract: In a synchronous semiconductor memory device, memory arrays (MA) forming activation units each are divided into a plurality of small memory arrays (MK). There are provided local I/O line pairs (LIO) each for two small memory arrays. The global I/O line pairs (GIO) crossing word lines are arranged in word line shunt regions (WS). The connection switches (BS) are arranged in the crossing between the local I/O line pairs and global I/O line pairs. Each small memory array in the activated memory array is connected to the corresponding global I/O line pair through the local I/O line pair. Thereby, a plurality of bits can be simultaneously read without increasing an area occupied by interconnections. The control of connection switch is made using a sense amplifier activation signal. Global I/O lines are precharged/equalized after data are transferred to read data registers provided for data output terminal for sequential data output or into selected memory cells.
Type:
Grant
Filed:
January 31, 1994
Date of Patent:
April 4, 1995
Assignees:
Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Engineering Co., Ltd.