Abstract: A flash memory and its data refresh method, where data read out in program verify mode and erase verify mode from read address are compared in each address (ST110), and data of a memory cell corresponding to inconsistent data are rewritten (ST112). Or adding values of data read out in the program verify mode and the erase verify mode are compared in each block (ST137) and a defective block is retrieved and data in each address are compared in the defective block (ST160), and data of a memory cell corresponding to inconsistent data are rewritten (ST162). Thereby, defective data can be retrieved and corrected.

Abstract: A closed caption decoder with a pause function suitable for learning a language comprising: a closed caption decode circuit for decoding closed caption signals included in video signals outputted from a video cassette recorder and for outputting a detection signal when a predetermined control code is decoded; a timer which measures an elapse of time from a time when the predetermined control code is decoded; and a pause control circuit for instructing the caption decode means to perform a pause operation of caption decode and the video cassette recorder to perform a pause of video reproduction when the detection signal is outputted form the closed caption decode circuit and for outputting a pause termination signal of caption decode to the closed caption decoder and a pause termination signal of video reproduction to the video cassette recorder when the timer measures a predetermined period of time.

Abstract: An emulator probe comprising a direction changing board 10 having a first connector 11 to be coupled to a relaying connector 9 set on one surface thereof and a second connector 12 set on the other surface thereof such that the direction of setting of the same is different from the direction of setting of the first connector 11 and adapted such that soldering to a microcomputer mounting foot pattern 3 is achieved not through a pin terminal but through a semicircular edge portion of a semicircular through hole 8a formed in the peripheral surface of a semicircular through-hole board 8, and therefore, the emulator can be mounted on a user target board 1 easily without the need to deform the emulator cable and, further, the area occupied by the microcomputer mounting foot pattern can be decreased.

Abstract: A buffer circuit with driving current adjusting function is provided which may automatically set a driving current characteristics of a buffer to the most suitable value according to a system where the driving current is to be applied.

Abstract: In an EEPROM, a column decoder control register stores, in accordance with a first signal on a system bus, a state indicating whether one byte of bit lines or all of the bit lines are selected. When the column decoder control register stores the state for selecting all of the bit lines, a column decoder selects a full Y-gate so that the same data is latched in a full column latch by latching data once. The latched data is written by a controller into all bytes in a page.

Abstract: A unique word detecting apparatus comprising a preamble code detecting circuit 202 for detecting a preamble code PR to be transmitted before the unique word UW, a unique word detecting circuit 204 for holding in advance the data of the unique word UW to be detected, an error detecting circuit 203 for comparing the external data with the unique word UW successively bit by bit only when and after the preamble code PR is detected and for outputting an error signal E when not coincide, and a unique word detecting circuit 204 for counting the number of outputs of the error signal E and for outputting a detecting signal DT indicating that the unique word UW has been detected when the count value is equal to or smaller than a predetermined value.

Abstract: A nonvolatile semiconductor storage device has a sense characteristic modifying circuit for modifying the sense characteristic of a sense amplifier that amplifies the data in a memory cell and a volatilization discriminating unit that discriminates whether or not a memory cell suffers volatilization by comparing the level of a data read before modifying the sense characteristic and the level of a data read after modifying the sense characteristic. In this nonvolatile semiconductor storage device, the level of the data read on the basis of a sense characteristic with a more strict criterion is compared with the level of the data read on the basis of another sense characteristic with a less strict criterion, and it is discriminated whether or not the memory cell suffers volatilization on the basis of the result of the comparison.

Abstract: An intermittent operation circuit provided with a charge/discharge means in which, when a central processing means stops the operation of an internal clock oscillating means, a charging is started after discharging stored charges, and provided with an interruption control means which starts the operations of the internal oscillating means and the central processing means when a charge level of the charge stored in the charge/discharge means is once lowered and then the charge level reaches or exceeds a predetermined value, thereby, when the central processing means is in the stop mode, the operation of the processing means can be restored, without operating the timer and the internal clock oscillating means, resulting in that the consuming power of the circuit system can be further reduced than in the prior art.