Abstract: The present invention is related to a superconductive ceramic wire and a method for making same. According to the first aspect of the invention, there is provided a method for making a superconductive ceramic wire, the method comprising the steps of: (a) preparing a superconductive porous ceramics; (b) depositing lead in the pores of the ceramics; (c) covering the lead-depositted ceramics with a metal; and (d) extending the metal-clad and lead-deposited ceramics. According to the second aspect of the invention, there is provided a superconductive ceramic wire which is obtained by: (a) preparing a superconductive porous ceramics; (b) depositing lead in the pores of the ceramics; (c) covering the lead-depositted ceramics with a metal; and (d) extending the metal-clad lead-depositted ceramics.

Abstract: A twist drill includes a cylindrical body having an axis of rotation therethrough and having a forward end which contacts a workpiece. The body has a spiral flute formed in an outer peripheral surface thereof so as to extend spirally along a length thereof to the forward end and a land disposed adjacent to the flute. The flute has a first wall facing in the direction of rotation of the body and a second wall extending from an inner end of the first wall to the outer periphery of the body. The first wall terminates at the forward end in a first cutting lip having a radially outermost end disposed on the outer periphery of the body. The second wall is concavely shaped when viewed from the forward end and formed so that, assuming a first line extending from the outermost end perpendicular to a second line which connects the outermost end and the axis of the body, the maximum distance between the first line and the second wall is set to range between 0.45 D and 0.65 D, wherein D is a diameter of the body.

Abstract: An inside diameter blade has an annular plate and a layer of abrasive grains deposited on an internal circumferential portion of the annular plate. The thickness of the internal circumferential portion of the annular plate is set to no greater than 1/5,000 of its outer diameter. The tensile strength of the annular plate is set to no less than 230 kgf/mm.sup.2.

Abstract: A fine gold alloy wire of high tensile strength for bonding semiconductor elements is disclosed. The wire consists essentially of 0.0003 to 0.010 wt % of at least one rare earth element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y, the balance being Au and incidental impurities. The wire does not present a deformed loop and has greater bond strength if it contains 0.0003 to 0.010 wt % of at least one rare earth element of the Cerium Group selected from the group consisting of La, Ce, Pr, Nd and Sm and 0.0001 to 0.0060 wt % of at least one element selected from among Ge, Be and Ca.

Abstract: A quartz double crucible assembly utilized for producing silicon crystalline rods is manufactured as follows. First, outer and inner quartz crucibles are prepared by means of arc fusion method. Then, the outer and inner crucibles are received in a vessel accommodated in a heat-treating furnace. Subsequently, the crucibles are heated to a prescribed elevated temperature. Thus, the outer and inner crucibles are caused to join together, and a double crucible assembly is produced.

Abstract: There are provided an apparatus and a method for manufacturing a copper-base alloy. The apparatus includes an alloying spout, at least one feeder and a tundish. The tundish is inclined downwardly from one end toward the other end for flowing a molten copper therethrough. The feeder is connected to the alloying spout for introducing at least one solid solute constituent into the alloying spout. The method includes the steps of providing the above apparatus, continuously introducing the molten copper from the inlet into the passageway of the alloying spout and causing the molten copper to flow downwardly through the passageway to the outlet, and continuously introducing the solid solute constitutent into the passageway of the alloying spout through the feeder to mix the solute constituent with the molten copper to produce the copper-base alloy.

Abstract: A superconductive resin material comprising a resin matrix in which 70-90% by weight on the basis of the total composition of a superconductive compound metal oxide powder is homogeneously dispersed is disclosed.

Abstract: Amorphous silicon powder or film can be prepared by thermally decomposing a perchloropolysilane.

Abstract: A composition for forming a compound metal oxide of a specific composition and a process for preparing said compound oxide are disclosed. The composition comprises an alkoxide of a rare earth metal, an alkoxide of an alkaline earth metal and an organic acid salt of an organic complex of copper. The process comprises refluxing said composition for reaction and thermally decomposing the reaction product. Also a film-forming composition for forming a thin layer of a compound metal oxide is disclosed. Said film-forming compound comprises the above-mentioned composition plus a film forming resin and an organic solvent.

Abstract: An indexable cutter insert for a rotary cutter includes a plate having front and rear faces. The front face has at least one pair of first and second marginal ridges intersecting each other. The first marginal ridge is generally arcuately shaped when viewed in a direction perpendicular to the front face and serves as a main cutting edge. The second marginal ridge is short and straight and serves as a second cutting edge. The main cutting edge has a leading end portion intersecting the second cutting edge so as to define an obtuse angle therebetween. The front face serves as a rake surface for the main and second cutting edges and has a marginal surface portion disposed adjacent to the second cutting edge and the leading end portion of the main cutting edge. The marginal surface portion is convexly curved so as to slope toward the rear face toward the second cutting edge.

Abstract: A zirconium alloy that has sufficient corrosion resistance, strength and stress relaxation property for use as a component of a pressurized water nuclear reactor fuel assembly is disclosed. This alloy consists essentially of 0.2 to 0.91% Sn, 0.18 to 0.6% Fe, 0.07 to 0.4% Cr, one or both of 0.05 to less than 0.5% and 0.01 to 0.2% Ta, one or both of 0.05 to 1% V and 0.05 to 1% Mo, with the balance being Zr and incidental impurities, all percentages being based on weight.

Abstract: A heat-resistant pigment can be produced by forming a dense and uniform coating on the surface of the pigment by contacting a hydrophilic pigment with a metal oxide in at least partly water-miscible solvent.

Abstract: Making uranium dioxide pellets of controlled grain size by treating 50-500 g/l UO.sub.2 F.sub.2 with NH.sub.3 in a first and a second stages to form (NH.sub.4).sub.2 U.sub.2 O.sub.7 precipitate, wherein the NH.sub.3 /U molar ratio is between 3-5 in the first stage and between 6-12 in the second stage. The precipitate is then formed into UO.sub.2 pellets having grain size within the range from 10 to 100 .mu.m.

Abstract: An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure.

Abstract: A method of electrowinning a metal in which electrolysis and servicing and treatments of the electrodes are carried out using an electrode unit. A plurality of anode plates and cathode plates are allunately and insulatedly assembled and regularly spaced and secured. By use of such electrode units, the anode plates and the cathode plates can be arranged closely-spaced, and thus the efficiency of electrolysis is enhanced, the electrolytic cell can be made compact, and the operation space can be reduced. Also, this method is suitable for automation of an electrowinning operation.

Abstract: An inserted cutting tool includes a tool body, a plurality of cutting inserts, a plurality of wedge members and a plurality of clamp screws. The body includes a plurality of pockets formed therein, and each pocket includes a recess for receiving the insert. Each wedge member has a hole formed therethrough and has a first abutment surface disposed in abutment with a front face of the insert and at least one second abutment surface disposed in abutment with the body. Each clamp screw passes through the hole of a respective one of the wedge members and threaded into the body so that the tightening of the clamp screw causes the wedge member to wedge the insert against the body. The first abutment surface of each wedge member is inclined with respect to an axis of the hole in such a manner that a wedge angle defined therebetween ranges from about 30.degree. to about 50.degree..

Abstract: A superconducting structural body comprisinga superconducting ceramics anda metal sheath surrounding the superconducting ceramics,the metal sheath includingan Ag portion anda non-Ag metal portion, the Ag portion existing from inner to outer faces of the metal sheath, and the superconducting ceramics portion existing in the structural body and the non-Ag metal portion used as a structural material for the metal sheath as the outermost indirectly contacting each other through the Ag material.

Abstract: A twist drill includes a cylindrical body having an axis of rotation therethrough and having a forward end which contacts a workpiece. The body has a spiral flute formed in an outer peripheral surface thereof so as to extend spirally along a length thereof to the forward end and a land disposed adjacent to the flute. The flute had a first wall facing in the direction of rotation of the body and a second wall extending from an inner end of the first wall to the outer periphery of the body. The first wall terminates at the forward end in a first cutting lip having a radially outermost end disposed on the outer periphery of the body. The second wall is concavely shaped when viewed from the forward end and formed so that, assuming a first line extending from the outermost end perpendicular to a second line which connects the outermost end and the axis of the body, the maximum distance between the first line and the second wall is set to range between 0.45D and 0.65D, wherein D is a diameter of the body.

Abstract: In a rare earth-iron-boron alloy magnet powder, each individual particle includes a recrystallized grain structure containing a R.sub.2 Fe.sub.14 B intermetallic compound phase as a principal phase thereof, wherein R represents a rare earth element. The intermetallic compound phase are formed of recrystallized grains of a tetragonal crystal structure having an average crystal grain size of 0.05 .mu.m to 50 .mu.m. For producing the above magnet powder, a rear earth-iron-boron alloy material is first prepared. Then, hydrogen is occluded into the alloy material by holding the material at a temperature of 500.degree. C. to 1,000.degree. C. either in an atmosphere of hydrogen gas or in an atmosphere of hydrogen and inert gases. Subsequently, the alloy material is subjected to dehydrogenation at a temperature of 500.degree. C. to 1,000.degree. C. until the pressure of hydrogen in the atmosphere is decreased to no greater than 1.times.10.sup.-1 torr, and is subjected to cooling.

Abstract: A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.