Abstract: This pure copper material includes Cu in an amount of 99.9 mass % or more and 99.999 mass % or less, an average crystal grain size in a rolled surface is 10 ?m or more, and when a measurement area of 1 mm2 or more is measured by an EBSD method at a measurement interval of 1 ?m, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.

Abstract: A surface-coated cutting tool includes a substrate and a coating layer provided on the substrate, wherein 1) the coating layer includes an alternating layer of A sublayers and B sublayers, 2) the A sublayers are each A Al1-aTiaN (where 0.30?a?0.70), 3) the B sublayers are each Cr1-cM2cN (where M2 is B and/or Si, where 0.01?c?0.40), 4) the A and B sublayers each have an average thickness of 1 nm or more and 500 nm or less, and 5) the alternating layer has an average thickness of 0.3 ?m or more and 7.0 ?m or less, 6) the adjoining A and B sublayers satisfy the relation: 0.1?TA/TB?0.8 or 1.2?TA/TB?10.0, where TA is the average thickness of the A sublayers and TB is the average thicknesses of the B sublayers.

Abstract: A slit copper material comprises 99.96% by mass or greater of Cu. In this slit copper material, a ratio W/t of a plate width W to a plate thickness t is 10 or greater, an electrical conductivity is 97.0% IACS or greater, a ratio B/A of an average crystal grain size B in a plate surface layer portion to an average crystal grain size A in a plate center portion is in a range of 0.80 or greater and 1.20 or less, and the average crystal grain size A in the plate center portion is 25 ?m or less.

Abstract: An insulated copper wire is an insulated copper wire having a copper wire and an insulating film coating a surface of the copper wire, in which the insulating film contains a polymer material having an amide bond, on a peeled surface formed on a surface of the insulated copper wire by peeling off the insulating film, there more copper atoms bonded to a nitrogen atom or a carbon atom than copper atoms bonded to an oxygen atom, an oxygen-containing layer containing 10 atom % or more of oxygen in a depth direction from the peeled surface is formed, and a film thickness of the oxygen-containing layer is in a range of 2 nm or more and 30 nm or less. An electric coil is formed by winding the above-described insulated copper wire.

Abstract: A hafnium compound-containing sol-gel liquid contains an alcohol as a solvent and a hafnium compound as a hafnia source, in which the hafnium compound-containing sol-gel liquid contains one or two or more elements M selected from the group consisting of Zr, Ti, and Nb, a mass ratio WM/WHf of a content WM of the elements M to a content WHf of Hf as a metal component is within a range of 0.2% or more and 5.0% or less. A hafnia-containing film containing hafnia (HfO2) and one or two or more elements M selected from the group consisting of Zr, Ti, and Nb, and in which a mass ratio WM/WHfO2 of a content WM of the elements M to a content WHfO2 of the HfO2 is within a range of 0.05% or more and 5.0% or less.

Abstract: This pure copper material includes Cu in an amount of 99.9 mass % or more and 99.999 mass % or less, an average crystal grain size in a rolled surface is 10 ?m or more, and when a measurement area of 1 mm2 or more is measured by an EBSD method at a measurement interval of 1 ?m, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.

Abstract: This method for separating cobalt and nickel includes a step (S3) of immersing an electrode material of a lithium ion secondary battery in a treatment liquid containing sulfuric acid and hydrogen peroxide to obtain a leachate, a step (S4) of adding a hydrogen sulfide compound to the leachate to precipitate copper, either one of a first treatment step (S5A) or a second treatment step (S5B), a step (S6) of obtaining a precipitate substance containing cobalt sulfide and nickel sulfide and a residual liquid containing lithium, and a re-dissolution step (S7) of dissolving cobalt and nickel in a suspension obtained by suspending the precipitate substance in distilled water or dilute sulfuric acid, in which, in the re-dissolution step (S7), the suspension is bubbled with an oxidizing gas containing oxygen using a fine-bubble generation apparatus.

Abstract: This pure copper material includes Cu in an amount of 99.96 mass % or more, either one or both of one or more A-group elements selected from Ca, Ba, Sr, Zr, Hf, Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and one or more B-group elements selected from O, S, Se, and Te are included in a total amount of 10 mass ppm or more and 300 mass ppm or less, an average crystal grain size in a rolled surface is 15 ?m or more, and a high-temperature Vickers hardness at 850° C. is 4.0 HV or more and 10.0 HV or less.

Abstract: This pure copper material includes Cu in an amount of 99.96 mass % or more, either one or both of one or more A-group elements selected from Ca, Ba, Sr, Zr, Hf, Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and one or more B-group elements selected from O, S, Se, and Te are included in a total amount of 10 mass ppm or more and 300 mass ppm or less, an average crystal grain size in a rolled surface is 15 ?m or more, and a high-temperature Vickers hardness at 850° C. is 4.0 HV or more and 10.0 HV or less.

Abstract: A Cu—Ni—Si based copper alloy containing Ni and Si: in a center portion in a plate thickness direction, containing 0.4% by mass or more and 5.0% by mass or less of Ni, 0.05% by mass or more and 1.5% by mass or less of Si, and the balance Cu and inevitable impurities; where an Ni concentration on a plate surface is 70% or less of a center Ni concentration in the thickness center portion; a surface layer portion having a depth from the plate surface to be 90% of the center Ni concentration; in the surface layer portion, the Ni concentration increases from the plate surface toward the thickness center portion at 5.0% by mass/?m or more and 100% by mass/?m or less of a concentration gradient; to improve the electric connection reliability under high-temperature environment.

Abstract: A titanium substrate material includes: a substrate main body made of a sintered titanium particle body; and a titanium oxide film formed on the substrate main body, wherein a proportion of anatase titanium oxide among titanium oxide constituting the titanium oxide film is 90% or more. It may have a porosity of the substrate main body is within a range of 30% or more and 92% or less. It may have a compressive strength of the titanium substrate is 0.5 MPa or more.

Abstract: This aluminum powder mixture is an aluminum powder mixture obtained by mixing two or more powders containing aluminum, in which an oxygen content of the aluminum powder mixture is 0.3 mass % or less, and a total content of one or more elements selected from Ca, Cu, Fe, Mg, Mn, Ni, Si, and Zn contained in the aluminum powder mixture is 0.4 mass % or more and 5.0 mass % or less.

Abstract: This silver paste is used to form a silver paste layer by applying the silver paste directly on the surface of a copper or copper alloy member, and the silver paste includes a silver powder, a fatty acid silver salt, an aliphatic amine, a high-dielectric-constant alcohol having a dielectric constant of 30 or more, and a solvent having a dielectric constant of less than 30. The content of the high-dielectric-constant alcohol is preferably 0.01% by mass to 5% by mass when an amount of the silver paste is taken as 100% by mass.

Abstract: A ball end mill includes an end mill body; a chip discharge groove, a first gash, and a bottom cutting edge. A second gash is formed at an interval from the bottom cutting edge on at least a first wall surface of the first gash. A minimum curvature radius in a cross section perpendicular to an axis of the second gash is larger than a minimum curvature radius in a cross section perpendicular to an axis of a groove bottom portion of the first gash.

Abstract: Provided is a method of manufacturing an electrode plate for a plasma processing apparatus for forming a plurality of gas holes having a straight portion exceeding 12 mm in length in a thickness direction of an electrode plate main body in a penetrating state and in parallel to each other, the method including: a prepared hole forming step of forming a prepared hole with a diameter of 50% or more and 80% or less of a diameter of a hole forming the straight portion with a first drill from one surface of the electrode plate main body; and a straight portion forming step of forming the straight portion to overlap the prepared hole with a second drill.

Abstract: Provided is a bonding sheet using a copper particle that is less prone to deteriorate the sintering property due to oxidation of the copper particle, and can form a dense bonding layer having fewer voids, and can also bond an electronic component and the like with a high bonding strength. A bonding sheet (1) contains a copper particle (2) and a solvent (3) having a boiling point of 150° C. or higher, in which the copper particle (2) has a surface covered with an organic protective film, the content ratio of the copper particle (2) to the solvent (3) is in the range of 99:1 to 90:10 by mass, and the BET diameter of the copper particle (2) is in the range of 50 nm to 300 nm both inclusive.

Abstract: This copper alloy powder includes a copper alloy that contains 5% by mass or more and 50% by mass or less of Ni. This copper alloy powder may contain 45% by mass or more and 95% by mass or less of Cu. This copper alloy powder may contain 1% by mass or more and 42% by mass or less of Zn. This copper alloy powder may contain 7% by mass or less of Mn.

Abstract: A tungsten compound is appropriately disposed on a surface of carbon. The negative electrode material is a negative electrode material for a battery that includes amorphous carbon and sodium tungstate is attached on a surface on the amorphous carbon and provided on the surface of the amorphous carbon. The sodium tungstate may have at least one of a cubic crystal and a tetragonal crystal.

Abstract: This copper alloy has a composition containing Mg in an amount of 0.10 mass % or greater and 2.6 mass % or less, with a balance being Cu and inevitable impurities, in which in a plastic deformation region of a stress-strain curve obtained in a low-speed tensile test at a strain rate of 1.0×10?6/s, an average value of a period of a strain of a saw edge-shaped curve is 0.01% or greater and 1.0% or less, an average value of a difference in level of stress of the saw edge-shaped curve is 0.1 MPa or greater and 2 MPa or less, and there are five or more saw edge-shaped curves with a period of strain of 0.01% or greater and 1.0% or less and a difference in the level of stress of 0.1 MPa or greater and 2 MPa or less.

Abstract: This copper alloy contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise: 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater. The half-softening temperature ratio TLD/TTD is greater than 0.95 and less than 1.08. The half-softening temperature TLD is 210° C. or higher.