Abstract: This metal paste for bonding includes a metal powder, a copper salt, an amine, and an alcohol, in which a ratio A/B of a weight A of Cu in the copper salt to a weight B of the metal powder is set to be in a range of 0.02 or more and 0.25 or less, the metal paste is in a paste form in a temperature range of 15° C. or higher and 35° C. or lower, a liquid phase is generated in a temperature raising process starting from 35° C., the liquid phase dissipates in the temperature raising process at a liquid phase generation temperature or higher, and a metal sintered body is formed at a liquid phase dissipation temperature or higher.

Abstract: A resin composition according to the present invention is characterized by containing, with respect to 100 parts by mass of the thermoplastic, carbon fibers in a range of 2 parts by mass or more and 70 parts by mass or less and a silane coupling agent in a range of 0.3 parts by mass or more and 7 parts by mass or less.

Abstract: This method is a machining method using a tool body (10, 110) to which a distance sensor (31, 32) is attached, the method including a coordinate setting step of setting each of a cutting edge coordinate with a point of a cutting edge (22, 122) provided at the tool body (10, 110) as reference and a sensor coordinate with a reference point of the distance sensor (31, 32) as reference, a machining step of forming a machined surface using the cutting edge coordinate, and a measurement step of measuring a dimension of the machined surface using the sensor coordinate.

Abstract: A nitride semiconductor material having low lattice thermal conductivity and a heat flow switching element including the same are provided. The nitride semiconductor material according to the present invention is a metal nitride represented by M-Si—N—Te (where M represents at least one kind of transition metal element, and Te represents an arbitrary element), and has a thermal effusivity of less than 2000 Ws0.5/m2K. In particular, the M is at least one of Cr, Mn, Ni, Mo, and W. In addition, a heat flow switching element according to the present invention includes an N-type semiconductor layer 3, an insulator layer 4 formed on the N-type semiconductor layer, and a P-type semiconductor layer 5 formed on the insulator layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material described above.

Abstract: This continuous cast wire rod contains Cu: 62.0 mass % or greater and 70.0 mass % or less, Sn: 0.3 mass % or greater and 0.9 mass % or less, Zr: 0.0050 mass % or greater and 0.1000 mass % or less, and P: 0.0050 mass % or greater and 0.1000 mass % or less, with a balance being Zn and impurities, and a mass ratio Zr/P of Zr to P is 0.3 or greater.

Abstract: This method for recovering a valuable metal from a used LIB includes: a step of adding, to an electrode assembly taken out of a detoxified used LIB, metallic zinc in an excess amount relative to a mass of the electrode assembly; a step of heating a mixture of the electrode assembly and the metallic zinc to form a molten metal; a step of taking out the molten metal and separating the molten metal into an alloy metal and a slag; and a step of heating the alloy metal to volatilize zinc in the alloy metal, and thereby, recovering an alloy metal of a valuable metal.

Abstract: A cBN sintered compact in accordance with an embodiment of the present invention comprises: cBN grains in the amount of 40 vol % or more and 80 vol % or less; and a binder phase containing titanium boride grains. The cBN sintered compact satisfies the following relation: 3.0?X/Y?10.0, where Y is the sum of the lengths of envelopes on which the cBN grains are in contact with the binder phase, and X is the sum of the interfacial lengths of the titanium boride grains that are present within 2 ?m from the surfaces of each cBN grain and have an oblateness of 1.3 or more and 30.0 or less where the oblateness is defined by L2/(4?S), where L is the interfacial length and S is the area of the titanium boride grain.

Abstract: Provided is a more appropriate method of producing lithium sulfide having high ionic conductivity and no by-products generated. The method of producing lithium sulfide includes a temperature rising step (Step S14) of reducing lithium sulfate fed into a furnace in a state of heating to a temperature of more than 700° C. under an atmosphere of a reduced pressure of 0.05 MPa or less.

Abstract: A valuable metal recovery method includes: recovering a battery slag from lithium ion battery waste; adding an acid to the battery slag; adding a sulfur compound the leachate; filtering the first processed product to obtain a first processed filtrate; adding a sulfur compound to the first processed filtrate; filtering the second processed product to obtain a second processed filtrate; adding calcium hydroxide to the second processed filtrate; filtering the third processed product to obtain a third processed filtrate; adding sodium carbonate to the third processed filtrate; filtering the processed product; heating the fourth processed filtrate; blowing carbon dioxide or adding a carbonate; and filtering the processed product, wherein a pH of the second processed product is higher than a pH of the first processed product, and a pH of the third processed product is higher than the pH of the second processed product.

Abstract: A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 0.01 mass ppm or more and 3.00 mass ppm or less of P, 10.0 mass ppm or less of a total content of Pb, Se, and Te, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 ?m or more, an aspect ratio of the crystal grain on the rolled surface is set to 2.0 or less, and a length percentage of the small tilt grain boundary and the subgrain boundary with respect to all grain boundaries is set to 80% or less in terms of partition fraction.

Abstract: This hot-rolled copper alloy sheet contains Mg: 0.2 mass % or more and 2.1 mass % or less, Al: 0.4 mass % or more and 5.7 mass % or less, and Ag: 0.01 mass % or less, with a remainder being Cu and inevitable impurities, an area ratio of Cube orientation (area ratio of crystal orientation) measured by an EBSD method is 5% or less, an average KAM value when a boundary between adjacent pixels where an orientation difference between the pixels is 5° or more is regarded as a crystal grain boundary is 2.0 or less, and an average crystal grain size ? in a sheet-thickness central portion is 40 ?m or less.

Abstract: The coating film includes a laminated structure including at least one first layer and at least one second layer alternately disposed. The or each first layer has an average thickness of 0.5 to 100.0 nm and has an average composition: (AlxTi1-x-y-zMy)BzN, where M is at least one element selected from the group consisting of Groups 4, 5, and 6 elements, and lanthanide elements in the periodic table, 0.100?x?0.640, 0.001?y?0.100, and 0.060?z?0.400. The or each second layer has an average thickness of 0.5 to 100.0 nm and has an average composition: (AlpCr1-p-q-rM?q)BrN, where M? is at least one element selected from the group consisting of Groups 4, 5, and 6 elements, and lanthanide elements in the periodic table, 0.650?p?0.900, 0.000?q?0.100, and 0.000?r?0.050.

Abstract: A polyimide resin composition includes a polyimide resin and a filler dispersed in the polyimide resin, in which the polyimide resin has a dicarboxylic acid group or an acid anhydride group of the dicarboxylic acid group at both ends, and the filler includes at least one inorganic compound selected from the group consisting of aluminum oxide, aluminum hydroxide, magnesium oxide, and magnesium hydroxide on a surface thereof.

Abstract: This dithiapolyether diol has a halogen content of less than 10 ppm and a purity of 80% or more and is represented by the following general formula (1) or (2).

Abstract: To improve performance. A negative electrode material is a negative electrode material for a battery, and includes carbon, tungsten trioxide, and silicon particles (33) including silicon, and in the silicon particles (33), a ratio of the amount of Si in Si2p derived from elemental silicon to the amount of Si in Si2p derived from SiO2 in a surface layer is 3 or more, on an atomic concentration basis, as measured by X-ray photoelectron spectroscopy.

Abstract: A cBN sintered compact includes a binder phase that contains a Ti—Al alloy containing at least one of the Si, Mg, and Zn elements, Ti2CN, TiB2, AlN, and Al2O3; the ratio ITi2CN/ITiAl is 2.0 or more and 30.0 or less, wherein ITi2CN represents the intensity of the Ti2CN peak appearing at 2? from 41.9° to 42.2° and ITiAl represents the intensity of the Ti—Al alloy peak appearing at 2? from 39.0° to 39.3° in XRD; and, in the mapped image of each element of Ti, Al, Si, Mg, and Zn by Auger electron spectroscopy, the ratio STiAlM/STiAl, is 0.05 or more and 0.98 or less wherein STiAlM represents the average area of the portions wherein Ti, Al and at least one selected from the group consisting of Si, Mg, and Zn overlap and STiAl represents the average area of the portions where Ti and Al overlap.

Abstract: A cutting insert has a multi-stage columnar shape with an insert central axis as a center, the cutting insert including: a head portion having a circular cutting edge with the insert central axis as a center, a shaft portion disposed on a lower side of the head portion in an insert axial direction along the insert central axis and having a smaller outer diameter dimension than the head portion; a step portion configured to connect the head portion and the shaft portion; and an index portion disposed over a part of the step portion and a part of the head portion and recessed inward in an insert radial direction from an outer peripheral surface of each of the step portion and the head portion, in which a plurality of the index portions are arranged in an insert circumferential direction, and each of the index portions has a planar alignment surface.

Abstract: This flat conductive plate provided with an insulating film includes a flat conductive plate which is a punched product, and an insulating film which coats at least a part of the flat conductive plate, the insulating film is an electrodeposited film, the insulating film includes a polyamide-imide resin and a fluorine-based resin, an amount of the fluorine-based resin with respect to a total amount of the polyamide-imide resin and the fluorine-based resin is in a range of 72% by mass or more and 95% by mass or less, a relative permittivity at 25° C. is in a range of 2.2 or more and 2.8 or less, and an average film thickness is in a range of 5 ?m or more and 100 ?m or less.

Abstract: A method of producing a copper/ceramic bonded body, the copper member having a composition having a Cu purity of 99.96 mass % or more, a balance of inevitable impurities, a P content of 2 mass ppm or less, and a total content of Pb, Se and Te of 10 mass ppm or less, the method includes bonding the laminated copper member and the ceramic member by pressing and heating, wherein an average crystal grain size of the copper member before bonding is 10 ?m or more, an aspect ratio is 2 or less, and a pressing load is 0.05 MPa or more and 1.5 MPa or less, a heating temperature is 800° C. or higher and 850° C. or lower, and a holding time at the heating temperature is 10 minutes or longer and 90 minutes or shorter.

Abstract: A Li recovery method includes: an acid leaching step of adding an acid to a battery slag to produce a leachate; a first addition step of adding a Ca content to the leachate to produce a first processed product; a post-first-addition filtration step of filtering the first processed product to be separated into a first processing filtrate and a first processing residue; a second addition step of adding sodium carbonate to the first processing filtrate to produce a second processed product; a post-second-addition filtration step of filtering the second processed product to be separated into a second processing filtrate and a second processing residue; heating the second processing filtrate; blowing carbon dioxide into the heated second processing filtrate to produce a third processed product; and a post-carbonation filtration step of filtering the third processed product to be separated into a third processing filtrate and a third processing residue.