Abstract: The hard coating layer of the cutting tool includes a complex nitride or complex carbonitride layer expressed by the composition formula: (Ti1-xAlx)(CyN1-y). xavg and yavg satisfy 0.60?xavg?0.95 and 0?yavg?0.005. xavg is an average content ratio of Al in a total amount of Ti and Al, and yavg is an average content ratio of C in a total amount of C and N. Some crystal grains composing the complex nitride or complex carbonitride layer have a cubic structure. In crystal grains having the cubic structure, the average crystal grain misorientaion is 1 degree or more; or 2 degrees or more, based on analysis of the polished surface perpendicular to a surface of the layer. A peak exists in 1-2 degrees of the average crystal grain misorientation in the frequency distribution of the average crystal grain misorientation and the area ratio.
Abstract: A casting mold material used when casting a metal material includes, as a composition: Cr within a range of 0.3 mass % or more and 0.7 mass % or less; Zr within a range of 0.025 mass % or more and 0.15 mass % or less; Sn within a range of 0.005 mass % or more and 0.04 mass % or less; P within a range of 0.005 mass % or more and 0.03 mass % or less; and a balance consisting of Cu and inevitable impurities, in which a Zr content [Zr] (mass %) and a P content [P] (mass %) have a relationship of [Zr]/[P]?5, and a Sn content [Sn] (mass %) and a P content [P] (mass %) have a relationship of [Sn]/[P]?5.
September 28, 2018
July 9, 2020
MITSUBISHI MATERIALS CORPORATION
Shoichiro YANO, Shinobu SATOU, Kanta DAIRAKU
Abstract: This insulated flat conductive wire includes: a flat conductive wire having an aspect ratio a/b of 12 or more, wherein the aspect ratio is a ratio of a length a of a long side of a rectangular cross-section to a length b of a short side thereof; and an insulating film which consists of a polyamide-imide resin or a polyimide resin and coats the flat conductive wire, wherein the insulating film has a film thickness t1 of 10 ?m or more at a center portion of the long side of the rectangular cross-section, and the insulating film has a film thickness ratio t1/t2 of 0.80 to 1.35, and wherein the film thickness ratio t1/t2 is a ratio of the film thickness t1 at the center portion of the long side to a film thickness t2 at an edge portion of the long side of the rectangular cross-section.
Abstract: A copper alloy for an electronic and electric device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a strength ratio TSTD/TSLD, which is calculated from strength TSTD obtained in a tensile test performed in a direction perpendicular to a rolling direction and strength TSLD obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 0.9 and less than 1.1. The copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.
Abstract: A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.
Abstract: A composite member in which WC-based cemented carbide members are bonded to each other via a bonding layer formed by solid phase diffusion bonding of a bonding member made of a Ti foil. The bonding layer is constituted by first layers adjacent to the WC-based cemented carbide members and made of a TiC phase and a metal W phase in which an average area ratio of the TiC phase is 40 to 60%. The bonding layer also includes second layers adjacent to the first layers and made of a TiCo phase and a metal Ti phase in which an average area ratio of the TiCo phase is 50 to 95%, and a residual Ti layer.
Abstract: A copper ingot of the present invention which is casted by a belt-caster type continuous casting apparatus includes: 1 ppm by mass or less of carbon; 10 ppm by mass or less of oxygen; 0.8 ppm by mass or less of hydrogen; 15 ppm by mass to 35 ppm by mass of phosphorus; and a balance of Cu and inevitable impurities, and includes inclusions formed of oxides containing carbon, phosphorus, and Cu.
Abstract: A first radiance meter is directed toward an object to be measured, radiance is measured through a space where dust is present with the use of at least two wavelengths by the first radiance meter, second radiance meters which are equal in number to one or more objects having temperatures different from that of the object to be measured are directed toward the objects, radiances are measured through the space with the use of at least two wavelengths by the second radiance meters respectively, and a temperature of the object to be measured, a temperature of the dust, and concentration of the dust are measured from the radiances measured by the first radiance meter and the second radiance meters.
Abstract: In a hard coating layer that contains at least any of a layer of a complex nitride or a complex carbonitride (composition formula: (Ti1-xAlx)(CyN1-y)) of chemically-vapor-deposited Ti and Al, a layer of a complex nitride or a complex carbonitride (composition formula: (Ti1-?-?Al?Mr?)(C?Ni1-?)) of Ti, Al, and Me, and a layer of a complex nitride or a complex carbonitride (composition formula: (Cr1-pAlp)(CqN1-q) of Cr and Al in a surface-coated cutting tool, some crystal grains that form the layer of a complex nitride or a complex carbonitride have cubic structures, and a predetermined average crystal grain misorientation and inclined angle frequency distribution are present in the crystal grains that have cubic structures.
Abstract: A surface-coated cutting tool includes a tool body and a hard coating layer including a lower layer and an upper layer. The lower layer is made of a complex nitride layer of Al, Ti, and Si with the thickness of 0.3 to 3.0 ?m. It satisfies 0.3???0.5 and 0.01???0.10 (atomic ratio) being expressed by (Al1-?-?Ti?Si?)N. The upper layer is made of a complex nitride layer of Al, Cr, Si, and Cu with the thickness of 0.5 to 5.0 ?m. It satisfies 0.15?a?0.40, 0.05?b?0.20, and 0.005?c?0.05 (atomic ratio) being expressed by (Al1-a-b-cCraSibCuc)N. The upper layer is made of crystals having a hexagonal structure, and a half width of a diffraction peak of a (110) plane present in a range of 2?=55° to 65° is 1.0° to 3.5°.
Abstract: A surface-coated cutting tool includes: a tool body made of any one of tungsten carbide-based cemented carbide, TiCN-based cermet, a cubic boron nitride sintered material, and high-speed tool steel; and a hard coating layer provided on a surface of the tool body. The hard coating layer includes at least a complex nitride layer of Al, Cr, Si, and Cu with an average layer thickness of 0.5 to 8.0 ?m. The complex nitride layer of (Al1-a-b-cCraSibCuc)N satisfies 0.15?a?0.40, 0.05?b?0.20, and 0.005?c?0.05 (here, each of a, b, and c is in atomic ratio). The complex nitride layer has a hexagonal crystal structure. A half width of a diffraction peak of a (110) plane present in a range of 2?=55° to 65° by performing X-ray diffraction on the complex nitride layer is 1.0° to 3.5°.
Abstract: In this surface-coated cutting tool, a hard coating layer includes at least a layer of a complex nitride or complex carbonitride expressed by a composition formula: (Cr1-xAlx)(CyN1-y) or a layer of a complex nitride or complex carbonitride expressed by a composition formula: (Ti1-?-?Al?Me?)(C?N1-?), crystal grains configuring the layer of a complex nitride or complex carbonitride having an NaCl type face-centered cubic structure are present, and predetermined average crystal grain misorientation and inclined angle frequency distribution are present in the crystal grains having an NaCl type face-centered cubic structure.
Abstract: The SnAg alloy plating solution of the invention is a SnAg alloy plating solution including a water-soluble tin compound, a water-soluble silver compound, and a particular sulfide compound in an amount in the range of 0.25 mol or more and 10 mol or less with respect to 1 mol of silver in the water-soluble silver compound.
December 21, 2016
Date of Patent:
April 7, 2020
MITSUBISHI MATERIALS CORPORATION
Koji Tatsumi, Tsukasa Yasoshima, Takuma Katase
Abstract: The infrared sensor according to the present invention includes an insulating film; a pair of first terminal electrodes; a pair of second terminal electrodes; a first heat sensitive element; a second heat sensitive element; a pair of first pattern wiring parts and a pair of second pattern wiring parts that are patterned on either surface of the insulating film; an infrared-receiving region that is provided on the other surface of the insulating film so as to oppose to the first heat sensitive element; and an infrared reflection film that is formed on the other surface of the insulating film so as to avoid the infrared-receiving region and to cover at least the portion immediately above the second heat sensitive element, wherein the infrared reflection film has a thermal coupling part in proximity to a portion of the first pattern wiring part.
Abstract: A joined body manufacturing method includes: a laminating step for forming a laminated body in which either a copper circuit substrate (first member) or a ceramic substrate (second member) is coated beforehand with a temporary fixing material the main ingredient of which is a saturated fatty acid, the copper circuit substrate and the ceramic substrate are stacked and positioned by the temporary fixing material which has been melted, and by cooling the temporary fixing material the stacked copper substrate and ceramic substrate are temporarily fixed; and a joining step for forming a joined body in which the copper circuit substrate and the ceramic substrate are joined by heating with pressurizing the laminated body in the stacking direction.
Abstract: The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 ?m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 ?m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 ?m from the bonded interface toward the aluminum member side is 0.8 mass % or less.
August 29, 2016
Date of Patent:
March 31, 2020
MITSUBISHI MATERIALS CORPORATION, THE UNIVERSITY OF TOKYO
Abstract: A porous aluminum heat exchanger including: a porous aluminum body in which aluminum substrates are sintered each other; and a bulk body, which is an aluminum bulk body made of aluminum or aluminum alloy is provided. Pillar-shaped protrusions projecting toward an outside are formed on outer surfaces of the aluminum substrates, and pores of the porous aluminum body are configured to form flow channels of a heat medium.
July 2, 2015
Date of Patent:
March 24, 2020
MITSUBISHI MATERIALS CORPORATION
Toshihiko Saiwai, Koichi Kita, Ji-bin Yang, Koji Hoshino
Abstract: The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.
Abstract: A silver-coated particle (P1) is provided. The silver-coated particle (P1) includes a core particle (2) made of a resin particle or an inorganic particle and a silver coating layer (1) formed on a surface of the core particle (2), wherein, an amount of silver contained in the silver coating layer (1) is 5 to 90 parts by mass with respect to 100 parts of the silver-coated particle (P1), a crystallite diameter of the silver, which is calculated from a diffraction line obtained by filling a sample holder belonging to an X-ray diffraction apparatus with the silver-coated particle (P1); and irradiating X-ray in a range of 2?/?=30 to 120 deg., is in a range of 35 nm to 200 nm.
Abstract: Provided is a cBN sintered material for a tool body in which a ratio (PNTB/PNBN) of the number (PNTB) of cBN particles in contact with a Ti boride having a long axis of 150 nm or more to the total number (PNBN) of cBN particles is 0.05 or less.