Abstract: A heat sink integrated insulating circuit substrate includes: a heat sink including a top plate part and a cooling fin; an insulating resin layer formed on the top plate part of the heat sink; and a circuit layer made of metal pieces arranged on a surface of the insulating resin layer opposite to the heat sink, wherein, when a maximum length of the top plate part is defined as L, an amount of warpage of the top plate part is defined as Z, and deformation of protruding toward a bonding surface side of the top plate part of the heat sink is defined as a positive amount of warpage, and a curvature of the heat sink is defined as C=|(8×Z)/L2|, a ratio P/Cmax between a maximum curvature Cmax(I/m) of the heat sink during heating from 25° C. to 300° C. and peel strength P (N/cm) of the insulating resin layer satisfies P/Cmax>60.

Abstract: This copper/ceramic assembly includes: a copper member consisting of copper or a copper alloy; and a ceramic member, wherein the copper member and the ceramic member are bonded to each other. At a bonded interface between the ceramic member and the copper member, an active metal compound layer is formed on a side of the ceramic member. In a region extending by 10 ?m from the active metal compound layer toward a side of the copper member, an area rate of an active metal carbide is 8% or less.

Abstract: A heat flow switching element includes a substrate of which at least an upper surface is formed of an insulating material, an N-type semiconductor layer, a P-type semiconductor layer, and an insulator layer, in which one semiconductor layer of the N-type semiconductor layer and the P-type semiconductor layer is formed on the substrate, the insulator layer is formed on the one semiconductor layer, and the other semiconductor layer of the N-type semiconductor layer and the P-type semiconductor layer is formed on the insulator layer. In this way, electric charges induced by an external voltage are generated both at and near an interface between the N-type semiconductor layer and the insulator layer and at and near an interface between the P-type semiconductor layer and the insulator layer.

Abstract: A method of manufacturing a metal compound film is a method of manufacturing a metal compound film in which a compound generating liquid containing, as a solute component, a substance that generates a metal compound is applied to a substrate having an opening portion on a surface and sintered to form a metal compound film, including: a pre-wet liquid application step of applying a pre-wet liquid to the surface of the substrate, and filling the opening portion with the pre-wet liquid, the pre-wet liquid having better wettability to the substrate than the compound generating liquid; a compound generating liquid application step of applying the compound generating liquid to stack the compound generating liquid on the pre-wet liquid on the substrate, and diffusing the solute component of the compound generating liquid in the pre-wet liquid; and a sintering step of sintering the applied compound generating liquid to form metal compound film.

Abstract: A hafnium compound-containing sol-gel solution contains a lower alcohol having 5 or less carbon atoms that serves as a solvent, a hafnium compound that serves as a hafnium source, and a polyalcohol having either or both of an ether group and a N atom in a molecule, as a wettability improver. The hafnium compound-containing sol-gel solution preferably further contains a stabilizer. It is preferable that the content of the hafnium compound is regulated within a range of 0.05 mass % or more and 10 mass % or less, and the content of the polyalcohol is regulated within a range of 0.05 mass % or more and 20 mass % or less.

Abstract: A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of an aluminum oxide, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of an interface between the copper member and the ceramic member; and a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase.

Abstract: This method for recovering a valuable metal from a used LIB includes: a step of adding, to an electrode assembly taken out of a detoxified used LIB, metallic zinc in an excess amount relative to a mass of the electrode assembly; a step of heating a mixture of the electrode assembly and the metallic zinc to form a molten metal; a step of taking out the molten metal and separating the molten metal into an alloy metal and a slag; and a step of heating the alloy metal to volatilize zinc in the alloy metal, and thereby, recovering an alloy metal of a valuable metal.

Abstract: A cBN sintered compact in accordance with an embodiment of the present invention comprises: cBN grains in the amount of 40 vol % or more and 80 vol % or less; and a binder phase containing titanium boride grains. The cBN sintered compact satisfies the following relation: 3.0?X/Y?10.0, where Y is the sum of the lengths of envelopes on which the cBN grains are in contact with the binder phase, and X is the sum of the interfacial lengths of the titanium boride grains that are present within 2 ?m from the surfaces of each cBN grain and have an oblateness of 1.3 or more and 30.0 or less where the oblateness is defined by L2/(4?S), where L is the interfacial length and S is the area of the titanium boride grain.

Abstract: Provided is a more appropriate method of producing lithium sulfide having high ionic conductivity and no by-products generated. The method of producing lithium sulfide includes a temperature rising step (Step S14) of reducing lithium sulfate fed into a furnace in a state of heating to a temperature of more than 700° C. under an atmosphere of a reduced pressure of 0.05 MPa or less.

Abstract: This continuous cast wire rod contains Cu: 62.0 mass % or greater and 70.0 mass % or less, Sn: 0.3 mass % or greater and 0.9 mass % or less, Zr: 0.0050 mass % or greater and 0.1000 mass % or less, and P: 0.0050 mass % or greater and 0.1000 mass % or less, with a balance being Zn and impurities, and a mass ratio Zr/P of Zr to P is 0.3 or greater.

Abstract: This copper/ceramic assembly includes: a copper member consisting of copper or a copper alloy; and a ceramic member consisting of silicon nitride, wherein the copper member and the ceramic member are bonded. At a bonded interface between the ceramic member and the copper member, an active metal nitride layer is formed on a side of the ceramic member. In a region extending by 10 ?m from the active metal nitride layer toward a side of the copper member, an area rate of an active metal compound containing Si and an active metal is 10% or less. A ratio PA/PB of an area rate PA of the active metal compound in a peripheral part region of the copper member to an area rate PB of the active metal compound in a central part region of the copper member is in a range of 0.7 or more and 1.4 or less.

Abstract: A bonded body includes an aluminum member made of an aluminum alloy and a copper member made of copper or a copper alloy, in which the aluminum member is made of an Al—Mn-based alloy containing Mn, an Mn concentration C0 of the entire aluminum member is in a range of 0.4 mass % or more and 1.5 mass % or less, and, when an Mn concentration in a region excluding a precipitate in the aluminum member is defined as an Mn solid solution concentration C1 and a value obtained by subtracting the Mn solid solution concentration C1 from the Mn concentration C0 of the entire aluminum member is defined as an Mn precipitate concentration C2, a ratio C1/C2 of the Mn solid solution concentration C1 to the Mn precipitate concentration C2 is in a range of 0.1 or more and 2.7 or less.

Abstract: A pure copper sheet has a composition including 99.96 mass % or more of Cu, 9.0 mass ppm or more and less than 100.0 mass ppm of a total content of Ag, Sn, and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 ?m or more, the pure copper sheet has crystals in which crystal planes parallel to the rolled surface are a {022} plane, a {002} plane, a {113} plane, a {111} plane, and a {133} plane, and diffraction peak intensities of the individual crystal planes that are obtained by X-ray diffraction measurement by a 2?/? method on the rolled surface satisfy I {022}/(I {022}+I {002}+I {113}+I {111}+I {133})?0.15, I {002}/I {111}?10.0, and I {002}/I {113}?15.0.

Abstract: A cutting insert includes first and second polygonal surfaces and a plurality of side surfaces. A corner edge that has a corner rake surface on the first polygonal surface is formed at a first corner portion, and a main cutting edge is formed from the corner edge to a second corner portion. The main cutting edge includes, at least on a corner edge side, a rake angle gradual increase region where a rake angle of a main rake surface gradually increases to a positive angle side as going from a first end portion of the corner edge toward a second corner portion side.

Abstract: A thermoelectric conversion module is formed by arranging, on one surface, a plurality of thermoelectric conversion element pairs in which an n-type thermoelectric conversion element and a p-type thermoelectric conversion element are connected by interposing an electrode plate, and connecting the plurality of the thermoelectric conversion element pairs in series; and the thermoelectric conversion module has a first output terminal provided on one thermoelectric conversion element pair arranged at one end side of the plurality of the thermoelectric conversion element pairs connected in series, a second output terminal provided on the other thermoelectric conversion element pair arranged at the other end side of the plurality of the thermoelectric conversion element pairs connected in series, and an intermediate output terminal provided at any position between the thermoelectric conversion element pair arranged at the one end side and the thermoelectric conversion element pair arranged at the other end side.

Abstract: A bonded body of copper and ceramic includes: a copper member made of copper or a copper alloy and a ceramic member made of an aluminum oxide, the copper member and the ceramic member being bonded to each other; a magnesium oxide layer which is formed on a ceramic member side between the copper member and the ceramic member; and a Mg solid solution layer which is formed between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, in which one or more active metals selected from Ti, Zr, Nb, and Hf are present in the Mg solid solution layer.

Abstract: In a copper/ceramic bonded body according to the present invention, copper members and are each bonded to one surface and the other surface of a ceramic member, active metal nitride layers and are formed on the ceramic member side of the copper members and, area rates A1 and A2 of an active metal compound containing Si and an active metal are set to 10% or less in regions (E1) and (E2) of 10 ?m from the active metal nitride layers and to the copper members and, and a ratio A1/A2 of the area rate A1 of the active metal compound on a side of the one surface and the area rate A2 of the active metal compound on a side of the other surface is set in a range of 0.7 or more and 1.4 or less.

Abstract: Provided are a nitride insulator material having low lattice thermal conductivity, a method for producing the same, a heat flow switching element, and a thermoelectric conversion element. The nitride insulator material of the present invention consists of a metal nitride represented by the general formula: M-Si—N—Te (where M represents at least one of Ta and Hf, and Te is an arbitrary element) and has a nanocrystalline structure. In addition, the heat flow switching element of the present invention includes: an N-type semiconductor layer 3; an insulator layer 4 laminated on the N-type semiconductor layer; and a P-type semiconductor layer 5 laminated on the insulator layer, wherein the insulator layer is made of the above-described nitride insulator material.

Abstract: This hot-rolled copper alloy sheet contains Mg: 0.2 mass % or more and 2.1 mass % or less, and Al: 0.4 mass % or more and 5.7 mass % or less, with a remainder being Cu and inevitable impurities, among the inevitable impurities, an amount of Fe is 0.0020 mass % or less, an amount of O is 0.0020 mass % or less, an amount of S is 0.0030 mass % or less, and an amount of P is 0.0010 mass % or less, a special grain boundary length ratio (L?/L) which is a ratio of a sum L? of lengths of grain boundaries with 3???29 to a length L of all measured crystal grain boundaries by an EBSD method is 20% or more, and an average crystal grain size ?A in a sheet-thickness central portion is 40 ?m or less.

Abstract: Any metal having a low ?-ray emission, the metal being any one of tin, silver, copper, zinc, or indium, wherein an emission of an ?-ray after heating the metal at 100° C. in an atmosphere for six hours is 0.002 cph/cm2 or less. Any metal of tin, silver, copper, zinc and indium each including lead as an impurity is dissolved to prepare a hydrosulfate aqueous solution of the metal and lead sulfate is precipitated and removed in the solution. The lead sulfate is precipitated in the hydrosulfate aqueous solution by adding a lead nitrate aqueous solution including lead having an ?-ray emission of 10 cph/cm2 or less to the hydrosulfate aqueous solution, from which the lead sulfate has been removed, and, at the same time, the solution is circulated while removing the lead sulfate to electrowinning the metal using the hydrosulfate aqueous solution as an electrolytic solution.