Patents Assigned to Mitsubishi Materials Corporation
  • Free-cutting copper alloy and method for producing free-cutting copper alloy
    Patent number: 11434548
    Abstract: This free-cutting copper alloy comprises 75.4-78.7% Cu, 3.05-3.65% Si, 0.10-0.28% Sn, 0.05-0.14% P, and at least 0.005% to less than 0.020% Pb, with the remainder comprising Zn and inevitable impurities. The composition satisfies the following relations: 76.5?f1=Cu+0.8×Si?8.5×Sn+P?80.3; 60.7?f2=Cu?4.6×Si?0.7×Sn?P?62.1; and 0.25?f7=P/Sn?1.0. The area percentage (%) of respective constituent phases satisfies the following relations: 28???67; 0???1.0; 0???0.2; 0???1.5; 97.4?f3=?+?; 99.4?f4=?+?+?+?; 0?f5=?+??2.0; and 30?f6=?+6×?1/2+0.5×??70. The long side of the ? phase is at most 40 ?m, the long side of the ? phase is at most 25 ?m, and ? phase is present in ? phase.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: September 6, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Keiichiro Oishi, Kouichi Suzaki, Shinji Tanaka, Takayuki Oka
  • FREE-CUTTING COPPER ALLOY CASTING, AND METHOD FOR PRODUCING FREE-CUTTING COPPER ALLOY CASTING
    Publication number: 20220275479
    Abstract: This copper alloy casting includes, in terms of mass %: Cu: higher than 58.5% and lower than 65.0%; Si: higher than 0.40% and lower than 1.40%; Pb: higher than 0.002% and lower than 0.25%; P: higher than 0.003% and lower than 0.19%; and Bi: 0.001% to 0.100% as an optional element, with the balance being Zn and inevitable impurities, the total content of Fe, Mn, Co, and Cr is lower than 0.45% and the total content of Sn and Al is lower than 0.45%, a relationship of 56.0?f1=[Cu]?5×[Si]+0.5×[Pb]+0.5×[Bi]?0.5×[P]?59.5 is satisfied, when Bi is included, a relationship of 0.003<f0=[Pb]+[Bi]<0.25 is further satisfied.
    Type: Application
    Filed: February 17, 2020
    Publication date: September 1, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Keiichiro Oishi, Kouichi Suzaki, Hiroki Goto
  • BONDED BODY, POWER MODULE SUBSTRATE, POWER MODULE, METHOD FOR MANUFACTURING BONDED BODY, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE
    Publication number: 20220278019
    Abstract: A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a Cu3P phase in a region extending by up to 50 ?m toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.
    Type: Application
    Filed: May 11, 2022
    Publication date: September 1, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • Insulated conductor and insulated conductor manufacturing method
    Patent number: 11430585
    Abstract: An insulated conductor having a conductor and an insulating film provided on a surface of the conductor, in which the insulating film has a fluorine-containing resin composition layer including a cured product of a thermosetting resin and a fluororesin and a fluorine concentration gradient layer which is disposed between the conductor and the fluorine-containing resin composition layer. The fluorine-containing resin composition layer includes a cured product of a thermosetting resin and a fluororesin, and is provided with a concentration gradient in which a fluorine atom content decreases from the fluorine-containing resin composition layer side toward the conductor.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: August 30, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Shintaro Iida, Hideaki Sakurai
  • Sputtering target material
    Patent number: 11427888
    Abstract: A sputtering target material contains one kind or two or more kinds selected from the group consisting of Ag, As, Pb, Sb, Bi, Cd, Sn, Ni, and Fe in a range of 5 massppm or more and 50 massppm or less, in terms of a total content; and a balance consisting of Cu and an inevitable impurity. In the sputtering target material, in a case in which an average crystal grain size calculated as an area average without twins is denoted by X1 (?m), and a maximum intensity of pole figure is denoted by X2, upon an observation with an electron backscatter diffraction method, Expression (1): 2500>19×X1+290×X2 is satisfied, a kernel average misorientation (KAM) of a crystal orientation measured by an electron backscatter diffraction method is 2.0° or less, and a relative density is 95% or more.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: August 30, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Satoru Mori, Satoshi Kumagai, U Tani, Yuuji Sato
  • DRILL
    Publication number: 20220266352
    Abstract: In this drill, a main cutting edge is formed on a tip-side ridge portion of a chip discharge flute (6) formed on an outer periphery of a tip portion of a drill body, a thinning edge is formed on a tip-side ridge portion of a thinning portion having a concave groove shape formed on a tip inner peripheral portion of the chip discharge flute, when viewed from a twist direction of the chip discharge flute, a radius of an the chip discharge flute inscribed circle is in a range of 0.3×D2 to 0.7×D2 with respect to a diameter D2 of a second circle; in the thinning portion, a radius (R2) of a thinning inscribed circle (C6) is in a range of 0.3×d to 0.7×d with respect to a core diameter (d) when viewed in a thinning direction.
    Type: Application
    Filed: June 30, 2020
    Publication date: August 25, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Akira Sato, Tomoki Kimura
  • Free-cutting copper alloy and method for producing free-cutting copper alloy
    Patent number: 11421302
    Abstract: This free-cutting copper alloy comprises 76.0-78.7% Cu, 3.1-3.6% Si, 0.40-0.85% Sn, 0.05-0.14% P, and at least 0.005% to less than 0.020% Pb, with the remainder comprising Zn and inevitable impurities. The composition satisfies the following relations: 75.0?f1=Cu+0.8×Si?7.5×Sn+P+0.5×Pb?78.2; 60.0?f2=Cu?4.8×Si?0.8×Sn?P+0.5×Pb?61.5; and 0.09?f3=P/Sn?0.30. The area percentage (%) of respective constituent phases satisfies the following relations: 30???65; 0???2.0; 0???0.3; 0???2.0; 96.5?f4=?+?; 99.4?f5=?+?+?+?; 0?f6=?+??3.0; and 35?f7=1.05×?+6×?1/2+0.5×??70. ? phase is present in ? phase, the long side of the ? phase is at most 50 ?m, and the long side of the ? phase is at most 25 ?m.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: August 23, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Keiichiro Oishi, Kouichi Suzaki, Hiroki Goto, Shinji Tanaka
  • Free-cutting copper alloy casting and method for producing free-cutting copper alloy casting
    Patent number: 11421301
    Abstract: This free-cutting copper alloy casting contains: 76.0-79.0% Cu, 3.1-3.6% Si, 0.36-0.85% Sn, 0.06-0.14% P, 0.022-0.10% Pb, with the remainder being made up of Zn and unavoidable impurities. This composition satisfies the following relations: 75.5?f1=Cu+0.8×Si?7.5×Sn+P+0.5×Pb?78.7, 60.8?f2=Cu?4.5×Si—0.8×Sn?P+0.5×Pb?62.2, 0.09?f3=P/Sn?0.35. The area ratios (%) of the constituent phases satisfy the following relations, 30???63, 0???2.0, 0???0.3, 0???2.0, 96.5?f4=?+?, 99.3?f5=?+?+?+?, 0?f6=?+??3.0, and 37?f7=1.05×?+6×?1/2+0.5×??72. The ? phase is present within the ? phase, the long side of the ? phase does not exceed 50 ?m, and the long side of the ? phase does not exceed 25 ?m.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: August 23, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Keiichiro Oishi, Kouichi Suzaki, Shinji Tanaka, Yoshiyuki Goto
  • COPPER ALLOY TROLLEY WIRE
    Publication number: 20220259701
    Abstract: A copper alloy trolley wire is formed of a composition containing Mg in a range of 0.15% by mass or more and 0.50% by mass or less, Cr in a range of 0.25% by mass or more and 1.0% by mass or less, and a Cu balance containing inevitable impurities, in which a tensile strength is 600 MPa or higher and an electrical conductivity is 60% IACS or higher.
    Type: Application
    Filed: June 3, 2020
    Publication date: August 18, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yoshiyuki Akiyama, Satoshi Kumagai, Norikazu Ishida, Tadanori Usuki, Chikara Yamashita
  • FREE-CUTTING COPPER ALLOY AND METHOD FOR PRODUCING FREE-CUTTING COPPER ALLOY
    Publication number: 20220259711
    Abstract: This free-cutting copper alloy contains Cu: more than 57.5% but less than 64.5%, Si: more than 0.20% but less than 1.20%, Pb: more than 0.001% but less than 0.20%, Bi: more than 0.10% but less than 1.00%, and P: more than 0.001% but less than 0.20%, with the balance being Zn and unavoidable impurities, wherein the total amount of Fe, Mn, Co and Cr is less than 0.45%, the total amount of Sn and Al is less than 0.45%, relationships of 56.3?f1=[Cu]?4.8×[Si]+0.5×[Pb]+0.5×[Bi]?0.5×[P]?59.5 and 0.12?f2=[Pb]+[Bi]<1.0 are satisfied.
    Type: Application
    Filed: March 16, 2020
    Publication date: August 18, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Keiichiro Oishi, Kouichi Suzaki, Hiroki Goto
  • PIEZOELECTRIC FILM AND PIEZOELECTRIC ELEMENT
    Publication number: 20220254987
    Abstract: A piezoelectric film contains iron-containing potassium sodium niobate represented by General Formula (1) and granular crystal particles having an average aspect ratio of 3 or less. (KxNa1-x)a(FeyNbz)O3??(1) In Formula (1), x represents a number satisfying 0<x<1, a represents a number satisfying 0.90<a?1, and y and z represent numbers satisfying y+z=1 and 0.006?y/z?0.04.
    Type: Application
    Filed: July 8, 2020
    Publication date: August 11, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Naoto Tsujiuchi, Nobuyuki Soyama
  • Insulated heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulated heat transfer substrate
    Patent number: 11404622
    Abstract: An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 ?m or larger and 50 ?m or smaller.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: August 2, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Koya Arai, Shuji Nishimoto, Masahito Komasaki, Yoshiyuki Nagatomo, Yoshirou Kuromitsu
  • Surface-coated cutting tool
    Patent number: 11400520
    Abstract: This surface-coated cutting tool is a surface-coated cutting tool having a hard coating layer formed on a surface of a tool body in which the hard coating layer includes at least one orientational Ti compound layer made of a rock salt-type cubic crystal structure containing 35 at % or more of Ti and 30 at % or more of N, a maximum TC value (TC max) is 2.5 or more, and, in the case of measuring crystal orientations, in a plane parallel to the surface of the tool body, of crystal grains for which a plane having the maximum TC value is perpendicular to the surface of the tool body, a full width at half maximum of ? scan is 30° or less.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: August 2, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventor: Akihiro Murakami
  • Electronic component and method of manufacturing electronic component
    Patent number: 11396164
    Abstract: An electronic component includes a ceramic element, glass-containing Au layers formed on both surfaces of the ceramic element, and an Au—Sn alloy layer formed on at least one of the glass-containing Au layers; the electronic component further includes a pure-Au layer between the glass-containing Au layer and the Au—Sn alloy layer; furthermore, the Au—Sn alloy layer has an Au—Sn eutectic structure.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: July 26, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Masayuki Ishikawa, Satoru Daido, Kaoru Nishizawa, Akihiro Yoshida, Hiroki Sato
  • Copper/ceramic bonded body, insulating circuit substrate, copper/ceramic bonded body production method, and insulating circuit substrate production method
    Patent number: 11396059
    Abstract: A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: July 26, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventor: Nobuyuki Terasaki
  • COPPER/CERAMIC ASSEMBLY, INSULATED CIRCUIT BOARD, METHOD FOR PRODUCING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR PRODUCING INSULATED CIRCUIT BOARD
    Publication number: 20220230935
    Abstract: This A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of oxygen-containing ceramics, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is formed on a ceramic member side between the copper member and the ceramic member, and an active metal oxide phase composed of an oxide of one or more active metals selected from Ti, Zr, Nb, and Hf is dispersed inside a copper layer in contact with the magnesium oxide layer.
    Type: Application
    Filed: June 23, 2020
    Publication date: July 21, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventor: Nobuyuki Terasaki
  • Bonded body, power module substrate, power module, method for manufacturing bonded body, and method for manufacturing power module substrate
    Patent number: 11393738
    Abstract: A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a Cu3P phase in a region extending by up to 50 ?m toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: July 19, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Nobuyuki Terasaki, Yoshiyuki Nagatomo
  • TiN-based sintered body and cutting tool made of TiN-based sintered body
    Patent number: 11389878
    Abstract: Disclosed is a TiN-based sintered body and a cutting tool made of the TiN-based sintered body, which has 70 to 94 area % of a TiN phase, 1 to 25 area % of a Mo2C phase, and a remainder including a binder phase. The binder phase contains Fe and Ni whose total area ratio is 5 to 15 area %, and an amount of Ni to a total amount of Fe and Ni is 15 to 35 mass %. When an X-ray diffraction profile is measured in the cross section of the TiN-based sintered body, the diffraction peaks of TiN, Mo2C and Fe—Ni having an fcc structure are present, but the diffraction peaks of Fe—Ni having a bcc structure, a Fe3Mo3C phase, and a Fe3Mo3N phase are absent. The lattice constant of the TiN is 4.235 to 4.245 ?, and that of the Fe—Ni having an fcc structure is 3.58 to 3.62 ?.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: July 19, 2022
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Makoto Igarashi, Kazutaka Fujiwara
  • COPPER/CERAMIC JOINED BODY, INSULATING CIRCUIT SUBSTRATE, COPPER/CERAMIC JOINED BODY PRODUCTION METHOD, AND INSULATING CIRCUIT SUBSTRATE PRODUCTION METHOD
    Publication number: 20220223492
    Abstract: This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a Mg—N compound phase extending from a ceramic member side to a copper member side is present at a bonded interface between the copper member and the ceramic member, and at least a part of the Mg—N compound phase enters into the copper member.
    Type: Application
    Filed: August 13, 2020
    Publication date: July 14, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventor: Nobuyuki Terasaki
  • INSULATION CIRCUIT BOARD WITH HEAT SINK
    Publication number: 20220223493
    Abstract: An insulated circuit board which is obtained by bonding a circuit layer onto one side of a ceramic substrate, and bonding a metal layer made of copper or copper alloy onto the other side of the ceramic substrate; and a heat sink which is bonded to the metal layer are included; the heat sink has a first metal layer made of aluminum or aluminum alloy joined to the metal layer, a ceramic board material joined to the first metal layer at an opposite side to the metal layer, and a second metal layer made of aluminum or aluminum alloy joined to the ceramic board material at an opposite side to the first metal layer; a thickness T1 of the first metal layer and a thickness T2 of the second metal layer are 0.8 mm to 3.0 mm inclusive; and a thickness ratio T1/T2 is 1.0 or more.
    Type: Application
    Filed: March 28, 2022
    Publication date: July 14, 2022
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Ryohei Yumoto, Tomoya Oohiraki, Takeshi Kitahara, Yoshiyuki Nagatomo