Abstract: Any metal having a low ?-ray emission, the metal being any one of tin, silver, copper, zinc, or indium, wherein an emission of an ?-ray after heating the metal at 100° C. in an atmosphere for six hours is 0.002 cph/cm2 or less. Any metal of tin, silver, copper, zinc and indium each including lead as an impurity is dissolved to prepare a hydrosulfate aqueous solution of the metal and lead sulfate is precipitated and removed in the solution. The lead sulfate is precipitated in the hydrosulfate aqueous solution by adding a lead nitrate aqueous solution including lead having an ?-ray emission of 10 cph/cm2 or less to the hydrosulfate aqueous solution, from which the lead sulfate has been removed, and, at the same time, the solution is circulated while removing the lead sulfate to electrowinning the metal using the hydrosulfate aqueous solution as an electrolytic solution.

Abstract: A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 10.0 mass ppm or less of a total content of Pb, Se, and Te, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 ?m or more, an aspect ratio of the crystal grain on the rolled surface is 2.0 or less, and an average crystal grain size of the crystal grains on the rolled surface after a pressure heat treatment performed under conditions of a pressure of 0.6 MPa, a heating temperature of 850° C., and a retention time at the heating temperature of 90 minutes is 500 ?m or less.

Abstract: In an insulating circuit substrate, aluminum sheets formed of aluminum or an aluminum alloy are laminated and bonded to a surface of a ceramic substrate and, in the aluminum sheets, Cu is solid-solubilized at a bonding interface with the ceramic substrate and a ratio B/A between a Cu concentration A mass % at the bonding interface and a Cu concentration B mass % at a position of 100 ?m in a thickness direction from the bonding interface to the aluminum sheets side is 0.30 or more and 0.85 or less.

Abstract: Provided is a method of manufacturing an electrode plate for a plasma processing apparatus for forming a plurality of gas holes having a straight portion exceeding 12 mm in length in a thickness direction of an electrode plate main body in a penetrating state and in parallel to each other, the method including: a prepared hole forming step of forming a prepared hole with a diameter of 50% or more and 80% or less of a diameter of a hole forming the straight portion with a first drill from one surface of the electrode plate main body; and a straight portion forming step of forming the straight portion to overlap the prepared hole with a second drill.

Abstract: An infrared shielding film is an infrared shielding film including: an organic binder; and a plurality of tin-doped indium oxide particles (ITO particles) dispersed in the organic binder, in which the average center-to-center distance between adjacent particles of the ITO particles is in a range of 9 nm or more and 36 nm or less, the ratio of the average center-to-center distance between the adjacent particles to the average primary particle diameter of the ITO particles is in a range of 1.05 or more and 1.20 or less, and a roughness Ra of a film surface is in a range of 4 nm or more and 50 nm or less.

Abstract: Provided is a bonding sheet using a copper particle that is less prone to deteriorate the sintering property due to oxidation of the copper particle, and can form a dense bonding layer having fewer voids, and can also bond an electronic component and the like with a high bonding strength. A bonding sheet (1) contains a copper particle (2) and a solvent (3) having a boiling point of 150° C. or higher, in which the copper particle (2) has a surface covered with an organic protective film, the content ratio of the copper particle (2) to the solvent (3) is in the range of 99:1 to 90:10 by mass, and the BET diameter of the copper particle (2) is in the range of 50 nm to 300 nm both inclusive.

Abstract: A thermoelectric conversion module is formed by arranging, on one surface, a plurality of thermoelectric conversion element pairs in which an n-type thermoelectric conversion element and a p-type thermoelectric conversion element are connected by interposing an electrode plate, and connecting the plurality of the thermoelectric conversion element pairs in series; and the thermoelectric conversion module has a first output terminal provided on one thermoelectric conversion element pair arranged at one end side of the plurality of the thermoelectric conversion element pairs connected in series, a second output terminal provided on the other thermoelectric conversion element pair arranged at the other end side of the plurality of the thermoelectric conversion element pairs connected in series, and an intermediate output terminal provided at any position between the thermoelectric conversion element pair arranged at the one end side and the thermoelectric conversion element pair arranged at the other end side.

Abstract: This heat sink integrated insulating circuit substrate includes: a heat sink including a top plate part and a cooling fin; an insulating resin layer formed on the top plate part of the heat sink; and a circuit layer made of metal pieces arranged on a surface of the insulating resin layer opposite to the heat sink, wherein, when a maximum length of the top plate part is defined as L, an amount of warpage of the top plate part is defined as Z, and deformation of protruding toward a bonding surface side of the top plate part of the heat sink is defined as a positive amount of warpage, and a curvature of the heat sink is defined as C=|(8×Z)/L2|, a ratio P/Cmax between a maximum curvature Cmax(l/m) of the heat sink during heating from 25° C. to 300° C. and peel strength P (N/cm) of the insulating resin layer satisfies P/Cmax>60.

Abstract: A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.

Abstract: A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L0 of a length L of an observed peeled portion to a length L0 of the bonding interface in an observation field is 0.16 or less.

Abstract: A material for porous metal body having a coil shape of a wire material wound in a helical shape, made of metal which having good thermal conductivity and can join by sintering; an average wire diameter Dw of the wire material is 0.05 mm to 2.00 mm inclusive, an average coil outer diameter Dc is 0.5 mm to 10.0 mm inclusive, a coil length L of 1 mm to 20 mm inclusive, and a winding number N is 1 to 10; and the plurality of materials for porous metal body are combined and sintered to form a metal porous body having a plurality of pores so that a pore ratio of the metal porous body is facilitated to be controlled.

Abstract: This thermoelectric conversion structure has a heat source and a thermoelectric conversion module installed at the heat source, where the thermoelectric conversion module has a plurality of thermoelectric conversion elements, a first electrode portion disposed on one end side of the thermoelectric conversion elements, and a second electrode portion disposed on the other end side of the thermoelectric conversion elements, and has a structure in which the plurality of thermoelectric conversion elements are electrically connected to each other via the first electrode portion and the second electrode portion, and at least a first electrode portion side of the thermoelectric conversion module, facing a heat source direction, has a structure that is free of fixation and free of restraint.

Abstract: This silver paste is used to form a silver paste layer by applying the silver paste directly on the surface of a copper or copper alloy member, and the silver paste includes a silver powder, a fatty acid silver salt, an aliphatic amine, a high-dielectric-constant alcohol having a dielectric constant of 30 or more, and a solvent having a dielectric constant of less than 30. The content of the high-dielectric-constant alcohol is preferably 0.01% by mass to 5% by mass when an amount of the silver paste is taken as 100% by mass.

Abstract: A silver powder is produced by reducing silver carboxylate and a particle size distribution of primary particles comprises a first peak of a particle size in a range of 20 nm to 70 nm and a second peak of a particle size in a range of 200 nm to 500 nm, organic matters are decomposed in an extent of 50 mass % or more at 150° C., gases generated in heating at 100° C. are: gaseous carbon dioxide; evaporated acetone; and evaporated water.

Abstract: Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/m or more and 5 mass %/m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

Abstract: There is provided an insulated electric wire formed by covering a rectangular conductor wire having a rectangular cross-sectional shape with an insulating film. The insulating film is formed of an inner layer covering a surface of the rectangular conductor wire, and an outer layer covering a surface of the inner layer. A thickness (t1) of a section of the inner layer, which covers one short side of two facing short sides of the same length of a rectangular cross section of the rectangular conductor wire, is greater than a thickness (t2) (including that t2=0) of a section of the inner layer which covers the other short side. An elastic modulus and/or a yield stress of the inner layer are less than an elastic modulus and/or a yield stress of the outer layer.

Abstract: A thermoelectric conversion material includes Mg2SixSn1?x (where 0.3?X?1) and a boride containing one or two or more metals selected from titanium, zirconium, and hafnium. Further, it is preferable that the boride is one or two or more selected from TiB2, ZrB2, and HfB2.

Abstract: This tin or tin alloy electroplating solution according to one aspect contains a soluble salt (A) including at least a stannous salt, one or more compounds (B) selected from the group consisting of an organic acid, an inorganic acid, and a salt thereof, a surfactant (C) that is a polyoxyethylene polycyclic phenyl ether sulfuric acid ester salt represented by the following General Formula (1), and a leveling agent (D). In General Formula (1), m is an integer of 1 to 3, n is an integer of 10 to 30, and X is a cation.

Abstract: A connection terminal having a copper alloy as a base material, the copper alloy comprising Zn in an amount of 21 mass % or more and 27 mass % or less, Sn in an amount of 0.6 mass % or more and 0.9 mass % or less, Ni in an amount of 2.5 mass % or more and 3.7 mass % or less, and P in an amount of 0.01 mass % or more and 0.03 mass % or less, and the balance being Cu and inevitable impurities, wherein the copper alloy has: a 0.2% proof stress of 620 MPa or higher and 700 MPa or lower, and an electrical conductivity of 15% IACS or higher and 20% IACS or lower.

Abstract: A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 ?m to 1.2 ?m inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu6Sn5 is a main ingredient and part of copper in the Cu6Sn5 is substituted with nickel, and an average crystal grain size is 0.2 ?m to 1.5 ?m inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 ?m to 1000 ?m inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.