Abstract: The present invention provides a fine silicon powder and the like including fine silicon particles having a microscopically measured particle diameter of 1 ?m or more and an average circularity determined in accordance with Formula (1) of 0.93 or more, in which an average particle diameter based on volume, which is measured by a laser diffraction scattering method, is in a range of 0.8 ?m or more and 8.0 ?m or less, an average particle diameter based on number, which is measured by the laser diffraction scattering method, is in a range of 0.100 ?m or more and 0.150 ?m or less, and a specific surface area, which is measured by a BET method, is in a range of 4.0 m2/g or more and 10 m2/g or less. Circularity=(4×?×projected area of particle)1/2/peripheral length of particle (1).

Abstract: An insulated conductor of the present invention is an insulated conductor having a conductor and an insulating film provided on a surface of the conductor, in which the insulating film has a low-concentration fluorine layer disposed on a surface side of the conductor and a high-concentration fluorine layer disposed on at least a part of an outside surface of the low-concentration fluorine layer, the low-concentration fluorine layer includes a cured product of a thermosetting resin and a fluororesin and has a fluorine atom content relatively lower than that of the high-concentration fluorine layer, and the high-concentration fluorine layer includes a cured product of a thermosetting resin and a fluororesin and has a fluorine atom content relatively higher than that of the low-concentration fluorine layer.

Abstract: A thermistor includes a thermistor element, a protective film formed on the surface of the thermistor element, and electrode portions formed on both end portions of the thermistor element, in which the protective film is formed of silicon oxide, and, as a result of observing a bonding interface between the thermistor element and the protective film, a ratio L/L0 of a length L of an observed peeled portion to a length L0 of the bonding interface in an observation field is 0.16 or less.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.

Abstract: A silver-coated resin particle having a resin particle and a silver coating layer provided on a surface of the resin particle, in which an average value of a 10% compressive elastic modulus is in a range of 500 MPa or more and 15,000 MPa or less and a variation coefficient of the 10% compressive elastic modulus is 30% or less.

Abstract: This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside.

Abstract: In a ceramic/copper/graphene assembly, a ceramic member, a copper member formed of copper or a copper alloy, and a graphene-containing carbonaceous member containing a graphene aggregate are joined. At a joining interface between the copper member and the graphene-containing carbonaceous member, an active metal carbide layer containing a carbide of one or more kinds of active metals selected from Ti, Zr, Nb, and Hf is formed on a side of the graphene-containing carbonaceous member, and a Mg solid solution layer having Mg dissolved in a matrix phase of Cu is formed between the active metal carbide layer and the copper member.

Abstract: A magnesium-based thermoelectric conversion material includes a first layer formed of Mg2Si and a second layer formed of Mg2SixSn1-x (here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.

Abstract: According to this method, a fatty acid of CnH2nO2 (n=5 to 14) is mixed with a plurality of metal sources selected from Zn, In, Sn, Sb, and Al, thereby fatty acid metal salts are obtained, subsequently the fatty acid metal salts are heated at 130° C. to 250° C., and a metal soap that is a precursor is obtained. This precursor is heated at 200° C. to 350° C., and metal oxide primary particles are dispersed in the precursor melt. To this dispersion liquid, a washing solvent having a ?P value higher by 5 to 12 than the ?P value of the Hansen solubility parameter of the final dispersing solvent is added, thereby the metal oxide primary particles are washed and agglomerated, metal oxide secondary particles are obtained, and then washing is repeated.

Abstract: A copper alloy has a composition including 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and a length LLB of a low-angle grain boundary and a subgrain boundary and a length LHB of a high-angle grain boundary have a relationship of LLB/(LLB+LHB)>20%.

Abstract: A copper/ceramic bonded body is provided, including: a copper member made of copper or a copper alloy; and a ceramic member, the copper member and the ceramic member being bonded to each other, in which a total concentration of Al, Si, Zn, and Mn is 3 atom % or less when concentration measurement is performed by an energy dispersive X-ray analysis method at a position 1000 nm away from a bonded interface between the copper member and the ceramic member to a copper member side, assuming that a total value of Cu, Mg, Ti, Zr, Nb, Hf, Al, Si, Zn, and Mn is 100 atom %.

Abstract: This pure copper plate or sheet contains 99.96% by mass or greater of Cu, in which when an average crystal grain size of crystal grains in a rolled surface is represented by X ?m and an amount of Ag is represented by Y mass ppm, an expression of 1×10?8?X?3Y?1?1×10?5 is satisfied, and when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NFJE and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NFJ2, an expression of 0.30<(NFJ2/(1?NFJ3))0.5?0.48 is satisfied.

Abstract: Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

Abstract: In a terminal material with a silver coating film including a silver layer on a surface, a terminal and a terminal material having high reliability are easily manufactured with low cost without a heat treatment. A base material formed of copper or a copper alloy; and nickel layer, an intermediate layer, and a silver layer laminated on the base material in this order are included, the nickel layer has a thickness of 0.05 ?m to 5.00 ?m and is formed of nickel or a nickel alloy, the intermediate layer has a thickness of 0.02 ?m to 1.00 ?m and is an alloy layer containing silver (Ag) and a substance X, and the substance X includes one or more kinds of tin, bismuth, gallium, indium, and germanium.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, an average crystal grain size is in a range of 10 ?m or more and 100 ?m or less, an electrical conductivity is 90% IACS or more, and a residual stress rate is 50% or more at 150° C. after 1000 hours.

Abstract: The present invention provides a high-concentration tin sulfonate aqueous solution, in which a divalent tin ion (Sn2+) concentration is 360 g/L to 420 g/L, a tetravalent tin ion (Sn4+) concentration is 10 g/L or less, a free methanesulfonic acid concentration is 40 g/L or less, a Hazen unit color number (APHA) is 240 or less, and a turbidity is 25 FTU or less. This aqueous solution is produced such that stannous oxide powder whose temperature is adjusted to a temperature of 10° C. or lower is added to an aqueous methanesulfonic acid solution having a concentration of 60% by mass to 90% by mass when the aqueous solution circulates in a state of being maintained at the temperature of 10° C. or lower, and the stannous oxide powder is dissolved.

Abstract: A nickel alloy sputtering target comprises: a nickel alloy containing an element capable of decreasing the Curie temperature of nickel, wherein an area ratio of a Ni phase having a Ni content of 99.0 mass % or more is 13% or less and an average crystal grain diameter is 100 gm or less. It is preferred that an area ratio of a high-purity Ni phase having a Ni content of 99.5 mass % or more be 5% or less.

Abstract: A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 ?m to 1.0 ?m inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 ?m to 2.5 ?m inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 ?m to 3.0 ?m inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 ?m and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 ?m or more, and a grain size ratio Ds/Dc is five or less.

Abstract: This free-cutting copper alloy contains Cu: 58.5 to 63.5%, Si: more than 0.4% and 1.0% or less, Pb: 0.003 to 0.25%, and P: 0.005 to 0.19%, with the remainder being Zn and inevitable impurities, a total amount of Fe, Mn, Co and Cr is less than 0.40%, a total amount of Sn and Al is less than 0.40%, a relationship of 56.3?f1=[Cu]?4.7×[Si]+0.5×[Pb]?0.5×[P]?59.3 is satisfied, constituent phases of a metal structure have relationships of 20?(?)?75, 25?(?)?80, 0?(?)<2, 20?(?)1/2×3+(?)×(?0.5×([Si])2+1.5×[Si])?78, and 33?(?)1/2×3+(?)×(?0.5×([Si])2+1.5×[Si])+([Pb])1/2×33+([P])1/2×14, and a compound including P is present in ? phase.

Abstract: A deposition apparatus for cutting tools with a coating film capable of depositing the coating film in an appropriate temperature condition is provided. The deposition apparatus includes: a deposition chamber in which a coating film is formed on the cutting tools; a pre-treatment chamber and post-treatment chamber, each of which is connected to the deposition chamber through a vacuum valve; and a conveying line that conveys the cutting tools from the pre-treatment chamber to the post-treatment chamber going through the deposition chamber, the in-line deposition apparatus using a conveyed carrier on which rods supporting cutting tools are provided in a standing state along a conveying direction. The deposition chamber includes: a deposition region; a conveying apparatus; a heating region; and a carrier-waiting region.