Abstract: In a ceramic/aluminum bonded body according to the present invention, a ceramic member and an aluminum member formed of aluminum or an aluminum alloy are bonded to each other, the ceramic member has a ceramic main body formed of silicon nitride, and an aluminum nitride layer or an aluminum oxide layer formed on the surface of the ceramic main body to which the aluminum member is bonded, the ceramic member and the aluminum member are bonded to each other through the aluminum nitride layer or the aluminum oxide layer, the ceramic main body is provided with silicon nitride phases and a glass phase formed between the silicon nitride phases, Al is present in a portion of the glass phase of the ceramic main body at an interface with the aluminum nitride layer or aluminum oxide layer.

Abstract: A wiper insert includes three first corner portions and three second corner portions which are alternately aligned on a polygonal surface in an insert circumferential direction. A cutting edge has a first cutting edge that performs a finishing operation on a work material, and a second cutting edge. An outer peripheral surface has a first flank face, a second flank face, and a first restraint surface disposed outward from the second cutting edge in an insert radial direction. When viewed in an insert axial direction, an insert shape is rotationally symmetrical by 180° around a rotation center axis passing through the second corner portion adjacent to a first side of a predetermined first corner portion in the insert circumferential direction and an insert center axis.

Abstract: This free-cutting copper alloy includes Cu: more than 58.0% and less than 65.0%, Si: more than 0.30% and less than 1.30%, Pb: more than 0.001% and 0.20% or less, Bi: more than 0.020% and 0.10% or less, and P: more than 0.001% and less than 0.20%, with the remainder being Zn and unavoidable impurities, a total amount of Fe, Mn, Co and Cr is less than 0.45%, a total amount of Sn and Al is less than 0.45%, relationships of 56.5?[Cu]?4.7×[Si]+0.5×[Pb]+0.5×[Bi]?0.5×[P]?59.5, and 0.025?[Pb]+[Bi]<0.25 are satisfied, in constituent phases of a metallographic structure, relationships of 20?(?)<85, 15<(?)?80, 0?(?)<5, 8.0?([Bi]+[Pb]?0.002)1/2×10+([P]?0.001)1/2×5+((?)?7)1/2×([Si]?0.1)1/2×1.2+(?)1/2×0.5?17.0, and 0.9?([Bi]+[Pb]?0.002)1/2×((?)?7)1/2×([Si]?0.1)1/2?4.0 are satisfied, and a particle containing Bi is present in ? phase.

Abstract: The tin alloy plating solution of the present invention includes (A) a soluble salt including at least a stannous salt, (B) a soluble salt of a metal nobler than tin, (C) an alkane sulfonic acid including 9 to 18 carbon atoms in a molecule or a salt thereof, (D) a non-ionic surfactant including one or more phenyl groups in a molecule, and (E) a leveling agent.

Abstract: In production of a solid electrolyte member, the amount or kinds of sulfides used as raw materials are reduced. A method of producing a solid electrolyte member is a method of producing a solid electrolyte member based on sulfide, the method including: a preparation step (S10) of preparing an aggregate of starting materials, in which the starting materials include elemental sulfur, and a non-sulfide raw material that is at least one of an element as an elemental substance other than sulfur that constitutes the solid electrolyte member, and a compound of elements other than sulfur that constitute the solid electrolyte member; and a forming step (S12) of heating the aggregate of starting materials to form the solid electrolyte member. The non-sulfide raw material contains no elements other than elements except sulfur that constitute the solid electrolyte member, except inevitable impurities.

Abstract: A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/?m or more and 50 mass %/?m or less.

Abstract: The plasma-resistant coating film according to the present invention is formed on a substrate, including crystalline Y2O3 particles having an average particle diameter of 0.5 ?m to 5.0 ?m in a SiO2 film, in which a film density of the plasma-resistant coating film is 90% or more, the film density being obtained by performing image analysis of a cross section of the film with an electron scanning microscope and by using the following expression (1), a size of pores in the film is 5 ?m or less in terms of diameter, and a peeling rate of the film from the substrate measured by performing a cross-cut test is 5% or less. Film density (%)=[(S1?S2)/S1]×100 (1). However, in the expression (1), S1 is an area of the film and S2 is an area of a pore portion in the film.

Abstract: What is provided is a method for separating cobalt and nickel including: a crushing and sorting step of crushing and classifying the lithium ion secondary battery to obtain an electrode material containing at least cobalt, nickel, copper, and lithium; a leaching step of immersing the electrode material in a processing liquid containing sulfuric acid and hydrogen peroxide to obtain a leachate; a copper separation step of adding a hydrogen sulfide compound to the leachate with stirring and subsequently carrying out solid-liquid separation to obtain an eluate containing cobalt and nickel and a residue containing copper sulfide; and a cobalt/nickel separation step of adding an alkali metal hydroxide to the eluate to adjust a pH and subsequently, adding a hydrogen sulfide compound with stirring and carrying out solid-liquid separation to obtain a precipitate containing cobalt sulfide and nickel sulfide and a residual liquid containing lithium.

Abstract: A slit copper material, a purity of Cu is comprises 99.96% by mass or greater of Cu. In this slit copper material, a ratio W/t of a plate width W to a plate thickness t is 10 or greater, an electrical conductivity is 97.0% IACS or greater, a ratio B/A of an average crystal grain size B in a plate surface layer portion to an average crystal grain size A in a plate center portion is in a range of 0.80 or greater and 1.20 or less, and the average crystal grain size A in the plate center portion is 25 ?m or less.

Abstract: There is provided an insulating resin circuit substrate including an insulating resin layer and a circuit layer consisting of a plurality of metal pieces disposed to be spaced apart in a circuit pattern shape on one surface of the insulating resin layer, in which in a case where a surface of the insulating resin layer in a gap between the metal pieces is analyzed by SEM-EDX, the area rate of a metal element constituting the metal pieces is less than 2.5%.

Abstract: A copper alloy plastically-worked material comprises Mg in the amount of 10-100 mass ppm and a balance of Cu and inevitable impurities, which comprise 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio of [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 or greater and 50 or less. The electrical conductivity is 97% IACS or greater. The tensile strength is 275 MPa or less. The heat-resistant temperature after draw working is 150° C. or higher.

Abstract: A method of recovering cobalt and nickel includes the steps of: adding alkaline to an acidic solution containing aluminum together with cobalt and nickel, adjusting pH of the acidic solution to 5 to 7, and converting the cobalt, the nickel and the aluminum into hydroxides thereof; recovering the hydroxides by solid-liquid separation, mixing the recovered hydroxides with an alkaline solution, and leaching aluminum contained in the hydroxides under a liquid condition of pH 8 or more; and recovering a cobalt hydroxide and a nickel hydroxide that aluminum is separated therefrom by solid-separation on a leachate.

Abstract: A base material at least a surface is made of copper or copper alloy and a silver-nickel-potassium alloy plating layer formed on at least a part of the base material are provided; the silver-nickel-potassium alloy plating layer has a film thickness of 0.5 ?m or more and 20.0 ?m or less, a nickel content of 0.02% by mass or more and 0.60% by mass or less, and a potassium content of 0.03% by mass or more and 1.00% by mass or less; and an average crystal grain size of the silver-nickel-potassium alloy plating layer is preferably 10 nm or more and 150 nm or less.

Abstract: A terminal material for a connector provided with a base material in which at least a surface layer is made of copper or copper alloy, a nickel-plating layer made of nickel or nickel alloy and formed on a surface of the base material, a silver-nickel alloy plating layer made of silver-nickel alloy and formed on at least a part of the nickel-plating layer, and a silver-plating layer made of silver and formed on the silver-nickel alloy plating layer; the silver-nickel alloy plating layer has a film thickness 0.05 µm or more and less than 0.50 µm and a nickel content 0.03 at% or more and 1.00 at% or less.

Abstract: The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.

Abstract: In a method for producing high-purity electrolytic copper, a first additive (A) containing an aromatic ring of a hydrophobic group and a polyoxyalkylene group of a hydrophilic group, a second additive (B) formed of polyvinyl alcohols, and a third additive (C) formed of tetrazoles are added to a copper electrolyte, copper electrolysis is performed by controlling each concentration of the first additive (A), the second additive (B), and the third additive (C), a current density and a bath temperature, and accordingly, electrolytic copper in which a concentration of Ag is less than 0.2 mass ppm, a concentration of S is less than 0.07 mass ppm, a concentration of all impurities is less than 0.2 mass ppm, and an area ratio of crystal grains having an average crystal grain misorientation (referred to as a GOS value) exceeding 2.5° is 10% or less is obtained.

Abstract: A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

Abstract: A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.

Abstract: A chip discharging flute is formed in a tip outer peripheral portion of a drill body rotated around an axis in a drill rotation direction. A cutting edge is formed in an intersection ridgeline portion between a wall surface of the chip discharging flute facing the drill rotation direction and a tip flank. The cutting edge includes a main cutting edge portion extending from an inner peripheral side toward an outer peripheral side of the drill body, and a cutting edge shoulder portion extending from an outer peripheral end of the main cutting edge portion to an outer periphery of the drill body, and is subjected to honing. Compared to the outer peripheral end of the main cutting edge portion, in an outer peripheral end of the cutting edge shoulder portion, a true rake angle is increased on a negative rake angle side, and a size of the honing decreases.

Abstract: A corrosion-resistant terminal material for an aluminum core wire having a good adhesion of plating and a high effect of corrosion resistant, having a base material in which at least a surface is made of copper or copper alloy and a corrosion-resistant film formed on at least a part of the base material; the corrosion film having an intermediate alloy layer made of tin alloy, a zinc layer made of zinc or zinc alloy formed on the intermediate alloy layer, and a tin-zinc alloy layer made of tin alloy containing zinc and formed on the zinc layer; and a tin content in the intermediate alloy layer is 90 at % or less.