Patents Assigned to Mitsui Mining & Smelting Co., Ltd.
  • Publication number: 20220351906
    Abstract: There is provided a double-sided copper-clad laminate for forming a capacitor that can exhibit excellent properties in voltage endurance and peel strength, while ensuring high capacitor capacity, when used as a capacitor. This double-sided copper-clad laminate includes an adhesive layer and a copper foil in order on each of both surfaces of a resin film, the resin film is in a cured state at 25° C., and each of the copper foils has a maximum peak height Sp of 0.05 ?m or more and 3.3 ?m or less as measured in accordance with ISO 25178 on a surface on a side being in contact with the adhesive layer.
    Type: Application
    Filed: June 4, 2021
    Publication date: November 3, 2022
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Ryuji ISHIZUKA, Yoshihiro YONEDA, Toshihiro HOSOI, Yuji KAGEYAMA
  • Patent number: 11485644
    Abstract: Provided are the following: an MWW type zeolite which has many Brønsted acid sites when in the form of a proton type and which is highly suitable as a cracking catalyst for cumene; a method for producing same; and an application of same. The present invention provides an MWW type zeolite in which the ratio (B/A) of the peak intensity (B) attributable to tetracoordinate aluminum relative to the peak intensity (A) attributable to hexacoordinate aluminum is 2 or more in 27Al MAS NMR, when measured as an ammonium type. The present invention also provides a method for producing an MWW type zeolite, the method having a step for carrying out a hydrothermal synthesis reaction in the presence of: a seed crystal of an MWW type zeolite containing no organic structure-directing agent; and a reaction mixture containing a silica source, an alumina source, an alkali source, an organic structure-directing agent, and water. The reaction mixture satisfies the following molar ratio: X/SiO2<0.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: November 1, 2022
    Assignees: Mitsui Mining & Smelting Co., Ltd., NATIONAL UNIVERSITY CORPORATION TOTTORI UNIVERSITY, NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY
    Inventors: Yoshihiro Kamimura, Akira Endou, Yasuo Yamazaki, Naonobu Katada, Satoshi Suganuma, Yoshihiro Kubota, Satoshi Inagaki
  • Patent number: 11465120
    Abstract: A nitrogen oxide storage material comprising: Mg1-yAl2O4-y, wherein y is a number satisfying 0?y?0.2, a noble metal, an oxide of a metal other than the noble metal, and a barium compound, the noble metal, the oxide, and the barium compound being loaded on Mg1-yAl2O4-y. The metal oxide comprises at least one metal oxide selected from zirconium oxide, praseodymium oxide, niobium oxide, and iron oxide.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: October 11, 2022
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Masaaki Inamura, Masaaki Haneda, Yuma Kako
  • Patent number: 11458460
    Abstract: An exhaust gas purifying catalyst (10) according to the present invention is an exhaust gas purifying catalyst including the first catalyst layer (12). The first catalyst layer (12) includes the first section (14) and the second section (15) in the exhaust gas flow direction. The first section (14) is located on the upstream side in the exhaust gas flow direction relative to the second section (15). A catalyst layer (16) contains a catalytically active component including a specific element. The concentration of the specific element in the catalyst layer (12) is higher in the first section (14) than in the second section (15), in terms of mass per unit volume. When the first section is divided in half along the thickness direction of the first catalyst layer (12), the ratio of a1 to a2, a1/a2, is 1.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: October 4, 2022
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Hiroki Tanaka, Yuki Nagao, Tokuya Watanabe
  • Patent number: 11447396
    Abstract: Provided are the following: an MWW type zeolite which has many Brønsted acid sites when in the form of a proton type and which is highly suitable as a cracking catalyst for cumene; a method for producing same; and an application of same. The present invention provides an MWW type zeolite in which the ratio (B/A) of the peak intensity (B) attributable to tetracoordinate aluminum relative to the peak intensity (A) attributable to hexacoordinate aluminum is 2 or more in 27Al MAS NMR, when measured as an ammonium type. The present invention also provides a method for producing an MWW type zeolite, the method having a step for carrying out a hydrothermal synthesis reaction in the presence of: a seed crystal of an MWW type zeolite containing no organic structure-directing agent; and a reaction mixture containing a silica source, an alumina source, an alkali source, an organic structure-directing agent, and water. The reaction mixture satisfies the following molar ratio: X/SiO2<0.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: September 20, 2022
    Assignees: Mitsui Mining & Smelting Co., Ltd., NATIONAL UNIVERSITY CORPORATION TOTTORI UNIVERSITY, NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY
    Inventors: Yoshihiro Kamimura, Akira Endou, Yasuo Yamazaki, Naonobu Katada, Satoshi Suganuma, Yoshihiro Kubota, Satoshi Inagaki
  • Patent number: 11433377
    Abstract: A substrate (11) of an exhaust gas purification catalyst (10) includes inflow-side cells (21), outflow-side cells (22), and porous partition walls (23) each separating the inflow-side cell and the outflow-side cell. Catalyst portions (14, 15) are provided on surfaces of the partition walls that each face the inflow-side cell and/or surfaces of the partition walls that each face the outflow-side cell. In a cross section vertical to an exhaust gas flow direction, the percentage of the total area of voids, each void satisfying the expression L/{2(?S)1/2}?1.1, wherein L is the perimeter of the void in the cross section and S is the area of the void in the cross section, is from 3 to 10% based on the apparent area of the catalyst portion present on the partition wall.
    Type: Grant
    Filed: March 9, 2020
    Date of Patent: September 6, 2022
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Yusuke Nagai, Shingo Akita, Hiroki Kurihara, Yoshinori Endo
  • Patent number: 11419210
    Abstract: An object of the present invention is to provide a resin composition which enables formation of a resin layer having excellent electrical performance including high frequency performance and appropriate solubility with desmear solution required on a material used in manufacturing of a printed wiring board. To achieve the object, the resin composition used for constituting a resin layer on a metal layer surface of a laminate includes a polyphenylene ether compound and 10 parts by mass to 100 parts by mass of a styrene-butadiene block copolymer and 0.1 parts by mass to 100 parts by mass of a component promoting solubility with desmear solution against 100 parts by mass of the polyphenylene ether compound.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: August 16, 2022
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Toshifumi Matsushima, Tetsuro Sato
  • Publication number: 20220223456
    Abstract: Provided is a carrier-attached metal foil with which both exposure for rough circuits and exposure for fine circuits in wiring formation can be performed based on the same alignment marks, and as a result, rough circuits and fine circuits can be simultaneously formed in a one-stage circuit formation process. This carrier-attached metal foil is a carrier-attached metal foil including a carrier, a release layer provided on at least one surface of the carrier, and a metal layer provided on the release layer, wherein the carrier-attached metal foil includes: a wiring region throughout which the carrier, the release layer, and the metal layer are present; and at least two positioning regions provided on the at least one surface of the carrier-attached metal foil and forming alignment marks used for positioning in wiring formation involving exposure and development.
    Type: Application
    Filed: May 18, 2020
    Publication date: July 14, 2022
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshinori MATSUURA, Toshimi NAKAMURA
  • Patent number: 11387487
    Abstract: A sulfur-containing compound containing a lithium (Li) element, a phosphorus (P) element, a sulfur (S) element, and a halogen (X) element, which can be suitably used as a solid electrolyte, and is able to suppress the generation of a hydrogen sulfide gas even when exposed to moisture in the atmosphere. The sulfur-containing compound has a peak at each position of 2?=21.3°±1.0°, 27.8°±1.0°, and 30.8°±0.5° in an X-ray diffraction pattern measured by an X-ray diffraction apparatus (XRD) using CuK?1 rays.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: July 12, 2022
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Tsukasa Takahashi, Takahiro Ito, Masaru Hyakutake, Teruaki Yagi
  • Patent number: 11374248
    Abstract: An oriented apatite-type oxide ion conductor includes a composite oxide expressed as A9.33+x[T6.00?yMy]O26.0+z, where A represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba, T represents an element including Si or Ge or both, and M represents one or two or more elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo, and where x is from ?1.00 to 1.00, y is from 0.40 to less than 1.00, and z is from ?3.00 to 2.00.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: June 28, 2022
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Shingo Ide, Yusuke Shiro
  • Publication number: 20220192029
    Abstract: There is provided a method for manufacturing a printed wiring board that effectively suppresses pattern failure and is also excellent in fine circuit forming properties. This method includes: providing an insulating substrate including a roughened surface; performing electroless plating on the roughened surface of the insulating substrate to form an electroless plating layer less than 1.0 ?m thick having a surface having an arithmetic mean waviness Wa of 0.10 ?m or more and 0.25 ?m or less as measured in accordance with JIS B0601-2001 and a kurtosis Sku of 2.0 or more and 3.5 or less as measured in accordance with ISO 25178; laminating a photoresist on the surface of the electroless plating layer; performing exposure and development to form a resist pattern; applying electroplating to the electroless plating layer; stripping the resist pattern; and etching away an unnecessary portion of the electroless plating layer to form a wiring pattern.
    Type: Application
    Filed: March 17, 2020
    Publication date: June 16, 2022
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshinori SHIMIZU, Hiroto IIDA, Misato MIZOGUCHI, Akitoshi TAKANASHI, Makoto HOSOKAWA
  • Publication number: 20220183158
    Abstract: There is provided a method for manufacturing a printed wiring board that effectively suppresses pattern failure and is also excellent in fine circuit forming properties. This method includes: providing an insulating substrate including a roughened surface; performing electroless plating on the roughened surface of the insulating substrate to form an electroless plating layer less than 1.0 ?m thick having a surface having an arithmetic mean waviness Wa of 0.10 ?m or more and 0.25 ?m or less and a valley portion void volume Vvv of 0.010 ?m3/?m2 or more and 0.028 ?m3/?m2 or less; laminating a photoresist on the surface of the electroless plating layer; performing exposure and development to form a resist pattern; applying electroplating to the electroless plating layer; stripping the resist pattern; and etching away an unnecessary portion of the electroless plating layer to form a wiring pattern.
    Type: Application
    Filed: March 17, 2020
    Publication date: June 9, 2022
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshinori SHIMIZU, Hiroto IIDA, Misato MIZOGUCHI, Akitoshi TAKANASHI, Makoto HOSOKAWA
  • Publication number: 20220169842
    Abstract: There is provided a resin composition including (a) an acrylic polymer having a tensile modulus of 200 MPa or less, (b) a resin that is solid at 25° C., (c) a resin that is liquid at 25° C. and crosslinkable with at least one of the component (a) or the component (b), and (d) a polymerization initiator. The content of the component (a) is 35 parts by weight or more and 93 parts by weight or less, the content of the component (b) is 3 parts by weight or more and 60 parts by weight or less, and the content of the component (c) is 1 part by weight or more and 25 parts by weight or less, based on 100 parts by weight of the total amount of the component (a), the component (b), and the component (c).
    Type: Application
    Filed: March 5, 2020
    Publication date: June 2, 2022
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Kazuhiro OOSAWA, Haruka MAKINO, Kuniharu OGAWA
  • Publication number: 20220162418
    Abstract: There is provided a resin composition that can greatly improve voltage endurance while ensuring high capacitance and excellent circuit adhesion, when used as the dielectric layer of a capacitor. This resin composition includes a binder component including bisphenol S, an epoxy resin curing agent having a phenolic hydroxyl group, and an epoxy resin; and a dielectric filler.
    Type: Application
    Filed: February 7, 2020
    Publication date: May 26, 2022
    Applicant: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Toshihiro HOSOI, Kenshiro FUKUDA, Yoshihiro YONEDA, Tomohiro ISHINO, Tetsuro SATO
  • Publication number: 20220139865
    Abstract: A bonded body is provided including: a bonding layer containing Cu; and a semiconductor element bonded to the bonding layer. The bonding layer includes an extending portion laterally extending from a peripheral edge of the semiconductor element. In a cross-sectional view in a thickness direction, the extending portion rises from a peripheral edge of a bottom of the semiconductor element or from the vicinity of the peripheral edge of the bottom of the semiconductor element, and includes a side wall substantially spaced apart from a side of the semiconductor element. Preferably, the extending portion does not include any portion where the side wall and the side of the semiconductor element are in contact with each other. A method for manufacturing a bonded body is also provided.
    Type: Application
    Filed: March 2, 2020
    Publication date: May 5, 2022
    Applicants: Mitsui Mining & Smelting Co., Ltd., Mitsui Mining & Smelting Co., Ltd.
    Inventors: Kei ANAI, Shinichi YAMAUCHI, Jung-Lae JO, Takahiko SAKAUE
  • Patent number: 11317522
    Abstract: Provided is a method of manufacturing a circuit board involves: preparing a composite laminate including a support, a release layer, and a multilayered circuit board; disposing the composite laminate on a stage such that one face of the composite laminate is put into tight contact with the stage; and releasing the support or the multilayered circuit board from the release layer such that the support or the multilayered circuit board forms a convex face with a curvature radius of 200 to 5000 mm while the face of the composite laminate is kept in tight contact with the stage. The method according to the present invention can prevent the occurrences of defects, for example, breaking in the support and cracking and wire disconnections in the multilayered circuit board in manufacturing of circuit boards, such as coreless circuit boards, and ensure stable release of the support or the multilayered circuit board.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: April 26, 2022
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Toshimi Nakamura, Yoshinori Matsuura
  • Patent number: 11310910
    Abstract: A resin composition for use in a dielectric layer of a capacitor device or a capacitor-embedded printed circuit board is provided in which the resin composition can improve stability in capacitance and insulation properties of the capacitor device under high temperature and high humidity and ensures high adhesion of the dielectric layer to the device. The resin composition comprises a resin component and a dielectric filler. The resin component comprises an epoxy resin, an active ester resin, and an aromatic polyamide resin.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: April 19, 2022
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventors: Yoshihiro Yoneda, Toshifumi Matsushima, Toshihiro Hosoi, Kenshiro Fukuda
  • Patent number: 11302929
    Abstract: Provided is a method with which it is possible to easily produce an electrode catalyst having excellent catalytic performance such as kinetically controlled current density. The method involves: a dispersion liquid preparation step of preparing a dispersion liquid by mixing (i) at least one type of solvent selected from the group consisting of sulfoxide compounds and amide compounds, (ii) a catalyst carrier powder constituted by a metal oxide, (iii) a platinum compound, (iv) a transition metal compound, and (v) an aromatic compound including a carboxyl group; and a loading step of heating the dispersion liquid to thereby load a platinum alloy of platinum and a transition metal on a surface of the catalyst carrier powder.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: April 12, 2022
    Assignees: MITSUI MINING & SMELTING CO., LTD., TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuichi Senoo, Koichi Miyake, Koji Taniguchi, Hiromu Watanabe, Naohiko Abe, Tatsuya Arai
  • Patent number: 11292964
    Abstract: Provided is a new phosphor which can be excited by visible light in a wide band to emit a broad fluorescence spectrum, and also to emit near-infrared light with high intensity. Proposed is a phosphor, which is an oxide comprising Ca, Cu, and Si, wherein the containing molar ratios of the elements are 0.15?Ca/Si<0.25 and 0.13?Cu/Si<0.25.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: April 5, 2022
    Assignee: Mitsui Mining & Smelting Co., Ltd.
    Inventors: Ikuhiro Ozawa, Takayoshi Mori, Riko Sato, Jun-ichi Itoh
  • Patent number: 11285700
    Abstract: A multi-layered board includes: a middle conductive layer; a first dielectric layer that is disposed directly on a first surface of the middle conductive layer; a second dielectric layer that is disposed directly on a second surface of the middle conductive layer; a first outer surface conductive layer that is disposed directly on an outer side of the first dielectric layer; and a second outer surface conductive layer that is disposed directly on an outer side of the second dielectric layer. The first outer surface conductive layer serves as a first outer surface of the multi-layered board, and the second outer surface conductive layer serves as a second outer surface of the multi-layered board. The middle conductive layer is solidly formed over an entire planar direction of the multi-layered board. The first dielectric layer and the second dielectric layer each independently have a thickness variation of 15% or less.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: March 29, 2022
    Assignee: MITSUI MINING & SMELTING CO., LTD.
    Inventor: Yoshihiro Yoneda