Patents Assigned to MO' MOTION VENTURES
  • Patent number: 9409776
    Abstract: This invention relates to a method for making strontium-phosphate microparticles that incorporate radioisotopes for radiation therapy and imaging.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: August 9, 2016
    Assignee: MO-SCI Corporation
    Inventors: Delbert E. Day, Yiyong He
  • Patent number: 9402724
    Abstract: A resorbable bone graft scaffold material, including a plurality of overlapping and interlocking fibers defining a scaffold structure, plurality of pores distributed throughout the scaffold, and a plurality of glass microspheres distributed throughout the pores. The fibers are characterized by fiber diameters ranging from about 5 nanometers to about 100 micrometers, and the fibers are a bioactive, resorbable material. The fibers generally contribute about 20 to about 40 weight percent of the scaffold material, with the microspheres contributing the balance.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: August 2, 2016
    Assignee: MO-SCI CORPORATION
    Inventors: Thomas E. Day, Steven B. Jung, Charanpreet S. Bagga
  • Patent number: 9337328
    Abstract: A super-junction trench MOSFET with closed cell layout is disclosed, wherein closed gate trenches surrounding a deep trench in each unit cell. Trenched source-body contacts are disposed between the closed gate trenches and the deep trench. The deep trench has square, rectangular, circle or hexagon shape.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: May 10, 2016
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Patent number: 9293527
    Abstract: A super-junction trench MOSFET is disclosed by applying a first doped column region of first conductivity type between a pair of second doped column regions of second conductivity type adjacent to sidewalls of a pair of deep trenches with buried voids in each unit cell for super-junction. A buffer poly-silicon layer is deposited above the buried void for stress release to prevent wafer crack and silicon defects.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: March 22, 2016
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Publication number: 20150367003
    Abstract: This invention relates to low density radioactive magnesium-aluminum-silicate (MAS) microparticles for radiotherapy and/or radioimaging.
    Type: Application
    Filed: August 31, 2015
    Publication date: December 24, 2015
    Applicant: MO-SCI CORPORATION
    Inventors: Delbert E. Day, Yiyong He
  • Patent number: 9183045
    Abstract: A method, apparatus, and article of manufacture for collecting and exchanging data are disclosed. In one embodiment, the apparatus comprises a non-volatile memory device, which includes an interface for coupling the non-volatile memory device to a host system; non-volatile memory for storing data, including a plurality of executables at least two of which are executable on different operating systems or devices. The plurality of executables includes a data collection executable and a data transfer executable. The non-volatile memory device also includes a controller to cause execution of at least one executable in the plurality of executables, including the data collection executable and the data transfer executable, where execution of the data collection executable causes data to be collected and stored in the non-volatile memory, and execution of which causes the collected data to be transferred to a location external to the non-volatile memory device.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: November 10, 2015
    Assignee: MO-DV, INC.
    Inventors: Martin Boliek, Robert D. Widergren, Wayne Hossenlopp
  • Patent number: 9119887
    Abstract: This invention relates to low density radioactive magnesium-aluminum-silicate (MAS) microparticles that contain either samarium-yttrium, samarium, or lutetium as medical isotopes for radiotherapy and/or radioimaging.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: September 1, 2015
    Assignee: MO-SCI CORPORATION
    Inventors: Delbert E. Day, Yiyong He
  • Publication number: 20150221733
    Abstract: A trench MOSFET structure having self-aligned features for mask saving and on-resistance reduction is disclosed, wherein source regions are formed by performing source Ion Implantation through contact holes of a contact interlayer in the middle of adjacent terrace trenched gates, and further source diffusion. Both the contact holes and source regions are self-aligned to the terrace trenched gates.
    Type: Application
    Filed: February 3, 2014
    Publication date: August 6, 2015
    Applicant: Force Mos Technology Co., Ltd.
    Inventor: FU-YUAN HSIEH
  • Patent number: 9058838
    Abstract: An article of manufacture includes a machine-readable medium that stores a multimedia content file in a first format and multiple program sets. Each program set is a version of software that, when executed by a respective electronic system, produces the multimedia content file in a second format for use in the respective electronic system. A first program set is compatible with a first operating system executed by a first electronic system and a second program set is compatible with a second operating system executed by a second electronic system. The second operating system is distinct from the first operating system.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: June 16, 2015
    Assignee: MO-DV, INC.
    Inventor: Robert D. Widergren
  • Publication number: 20150139502
    Abstract: Techniques where a computer or mobile device performs video analysis of a person performing a physical activity are described. The computer or mobile device performs video analysis based on one or more reference skeletons. The reference skeleton may be superimposed over captured video of the person performing the physical activity or compared to a generated player skeleton based on the captured video to determine derivation from the reference skeleton in the physical activity performed by the person.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: MO' MOTION VENTURES
    Inventor: Maureen Holohan
  • Publication number: 20150125780
    Abstract: A sealant for forming a seal between at least two solid oxide fuel cell components wherein the sealant comprises a glass material comprising B2O3 as a principal glass former, BaO, and other components and wherein the glass material is substantially alkali-free and contains less than 30% crystalline material.
    Type: Application
    Filed: July 23, 2013
    Publication date: May 7, 2015
    Applicants: THE CURATORS OF THE UNIVERSITY OF MISSOURI, MO-SCI CORPORATION
    Inventors: Cheol Woon Kim, Richard K. Brow
  • Publication number: 20150118495
    Abstract: This invention relates to strontium-phosphate microparticles that incorporate radioisotopes for radiation therapy and imaging.
    Type: Application
    Filed: October 21, 2014
    Publication date: April 30, 2015
    Applicant: MO-SCI CORPORATION
    Inventors: Delbert E. Day, Yiyong He
  • Publication number: 20150118139
    Abstract: This invention relates to a method for making strontium-phosphate microparticles that incorporate radioisotopes for radiation therapy and imaging.
    Type: Application
    Filed: October 21, 2014
    Publication date: April 30, 2015
    Applicant: MO-SCI CORPORATION
    Inventors: Delbert E. Day, Yiyong He
  • Patent number: 9018701
    Abstract: A power semiconductor device with improved avalanche capability is disclosed by forming at least one avalanche capability enhancement doped region underneath an ohmic contact doped region. Moreover, a source mask is saved by using three masks process and the avalanche capability is further improved.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: April 28, 2015
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Patent number: 9000515
    Abstract: A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: April 7, 2015
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Patent number: 8999789
    Abstract: A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: April 7, 2015
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Patent number: 8915386
    Abstract: A disposable baby bottle kit (10) that is easy to assemble with lowered risk of contamination of the baby bottle. The disposable baby bottle kit comprising a container that has a first portion (1) and a second portion (2), a collapsible baby bottle (3) positioned within the first portion of the container and a teat unit (4) fitted to the second portion of the container. The first portion and the second portion of the container are coupled to each other enclosing the collapsible baby bottle and the teat unit therein.
    Type: Grant
    Filed: April 23, 2012
    Date of Patent: December 23, 2014
    Assignee: Asian Mos Co., Ltd.
    Inventor: Amonrat Limwanawong
  • Patent number: 8907415
    Abstract: A shielded gate trench metal oxide semiconductor filed effect transistor (MOSFET) having high switching speed is disclosed. The inventive shielded gate trench MOSFET includes a shielded electrode spreading resistance placed between a shielded gate electrode and a source metal to enhance the performance of the shielded gate trench MOSFET by adjusting doping concentration of poly-silicon in gate trenches to a target value. Furthermore, high cell density is achieved by employing the inventive shielded gate trench MOSFET without requirement of additional cost.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: December 9, 2014
    Assignee: Force Mos Technology Co., Ltd.
    Inventor: Fu-Yuan Hsieh
  • Publication number: 20140346593
    Abstract: A super-junction trench MOSFET with a short termination area is disclosed, wherein the short termination area comprising a charge balance region and a channel stop region formed near a top surface of an epitaxial layer with a trenched termination contact penetrating therethrough.
    Type: Application
    Filed: May 22, 2013
    Publication date: November 27, 2014
    Applicant: Force Mos Technology Co., Ltd.
    Inventor: FU-YUAN HSIEH
  • Patent number: D770023
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: October 25, 2016
    Assignee: MO-EL S.R.L.
    Inventor: Carlo Bertani