Patents Assigned to Murata Manufacturing Co., Ltd.
  • Patent number: 11374608
    Abstract: Radio-frequency front-end circuit includes: first transfer circuit that transfers a 4G signal, a first antenna terminal connected to a first antenna, a second antenna terminal connected to a second antenna, and a switch that includes a first selection terminal and a second selection terminal. The first selection terminal is connected to the first transfer circuit, and the second selection terminal is connected to a second transfer circuit that transfers a 5G signal. The switch: when the first antenna is high in antenna sensitivity, connects the first antenna terminal to the first selection terminal, and connects the second antenna terminal to the second selection terminal; and when the second antenna is high in antenna sensitivity, connects the first antenna terminal to the second selection terminal, and connects the second antenna terminal to the first selection terminal.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Atsushi Ono
  • Patent number: 11374550
    Abstract: An elastic wave device includes first mass adding films provided on a first dielectric film to overlap with first and second electrodes fingers of an IDT electrode when seen from above, extend in a direction in which the first and second electrode fingers extend, and are provided in a center region, and second and third mass adding films that are provided on the first dielectric film and are provided in first and second edge regions, respectively, and a portion of which overlap with at least one of the first and second electrode fingers when seen from above. Dimensions of the second and third mass adding films along an elastic wave propagation direction are larger than a dimension of the first mass adding films along the elastic wave propagation direction.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Katsuya Daimon, Daisuke Tamazaki
  • Patent number: 11374301
    Abstract: A cable type antenna is provided having a small-sized lightweight configuration and enabling specifying of a radiation region having a desired antenna length. The cable type antenna may be sectionalized into a first region on the power feeding circuit side and a second region on the leading end side. The cable type antenna of the present disclosure further comprises a balanced-to-unbalanced transformer element disposed between the first region and the second region, wherein the balanced-to-unbalanced transformer element includes an unbalanced-side terminal connected to the first region and a balanced-side terminal connected to the second region configured to allow the first region to serve as a non-radiation part and the second region to serve as a radiation part.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Noboru Kato
  • Patent number: 11375611
    Abstract: A multilayer substrate that includes a first ceramic layer that is a dense body, a second ceramic layer that has open pores, and a resin layer adjacent the second ceramic layer, wherein a material of the resin layer is present in the open pores of the second ceramic layer.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Masaaki Hanao, Tsuyoshi Katsube
  • Patent number: 11374307
    Abstract: An antenna device includes first and second radiating elements, a first coil coupled to the first radiating element or a feeding circuit, and a second coil coupled to the second radiating element and coupled to the first coil via an electromagnetic field. The first and second radiating elements are coupled to each other via an electric field. At a resonant frequency defined by the antenna coupling element and the second radiating element, the absolute value of the phase difference between a current flowing into the second radiating element due to the electromagnetic field of the first coil and the second coil and a current flowing into the second radiating element due to the electric field is equal to or less than about 90 degrees.
    Type: Grant
    Filed: August 13, 2020
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takafumi Nasu
  • Patent number: 11374552
    Abstract: A multiplexer includes a filter located between a common terminal and an individual terminal, and a filter that is located between the common terminal and an individual terminal and that has a pass band whose frequency is lower than the pass band of the filter. The filter includes serial arm resonators provided on the first path connecting the common terminal to the individual terminal. Each of the serial arm resonators includes a piezoelectric substrate and an IDT electrode which use leaky waves as principal acoustic waves. The occurrence frequency of the Rayleigh wave response of the serial arm resonator is different from that of the serial arm resonator.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Miki Takamiya
  • Patent number: 11374252
    Abstract: Provided is a lithium ion secondary battery system having excellent reliability. Provided is a lithium ion secondary battery system including, at least a lithium ion secondary battery including a positive electrode and a negative electrode, and a lithium deposition sensor. In this lithium ion secondary battery system, the lithium deposition sensor includes an endotherm detector, and the endotherm detector detects endotherm in a constant current charging range.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: June 28, 2022
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Motoki Endo
  • Patent number: 11373805
    Abstract: An Mn/Ti peak intensity ratio in a dielectric ceramic layer in an end surface outer layer portion is within two times to fifteen times of the Mn/Ti peak intensity ratio in a central portion, a rare earth element/Ti peak intensity ratio in the dielectric ceramic layer in the end surface outer layer portion is within two times to seven times the rare earth element/Ti peak intensity ratio in the central portion, an Si/Ti peak intensity ratio in the dielectric ceramic layer in a side surface outer layer portion is within two times to five times the Si/Ti peak intensity ratio in the central portion, and the rare earth element/Ti peak intensity ratio in the dielectric ceramic layer in the side surface outer layer portion is within two times to seven times the rare earth element/Ti peak intensity ratio.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takehisa Sasabayashi, Yasuyuki Shimada, Naoto Muranishi, Shinichi Kokawa
  • Patent number: 11369996
    Abstract: A vibration device includes a protective cover, a first cylindrical body, a plate spring, a second cylindrical body, a piezoelectric element, and a vibrating plate. The vibration device further includes a non-equilibrium structure that removes a mass of a portion of or adds a mass to at least one of the protective cover, the first cylindrical body, the plate spring, the second cylindrical body, and the vibrating plate.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Katsumi Fujimoto, Yuuki Ishii, Hitoshi Sakaguchi
  • Patent number: 11373793
    Abstract: A multilayer substrate includes a stacked body of insulating base material layers and conductor patterns on the insulating base material layers. A thickness adjustment base material layer includes a frame portion, an opening portion inside the frame portion, and an island shaped portion inside the frame portion, and connection portions to connect the island shaped portion to the frame portion. The conductor patterns, in a stacking direction of the insulating base material layers, are wound around the island shaped portion. A line width of the connection portions is smaller than the width of the island shaped portion connected to the frame portion through the connection portions. An area overlapped with the conductor patterns is larger in the opening portion than in the frame portion and the island shaped portion.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Shingo Ito, Naoki Gouchi, Hirotaka Fujii, Kazutaka Muraoka
  • Patent number: 11373796
    Abstract: An inductor component 1 includes a resin layer 2, a protective film 4, two metal pins 5 provided to stand in the resin layer 2, and a metal plate 6 joined to both of the metal pins 5, and both of the metal pins 5 and the metal plate 6 configure an inductor electrode 7. Both of the metal pins 5 are provided to stand in the resin layer 2, upper end surfaces 5a thereof are exposed to an upper surface 2a of the resin layer 2, and lower end surfaces 5b thereof are exposed to a lower surface 2b. Recesses 8 are formed around the peripheral edges of the upper end surfaces 5a of both of the metal pins 5 by laser beam irradiation.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yoshihito Otsubo, Mitsuyoshi Nishide
  • Patent number: 11374598
    Abstract: A radio frequency module includes a module board, a transmission power amplifier, a first inductance element mounted on the module board and connected to an output terminal of the transmission power amplifier, a reception low noise amplifier, a first inductance element mounted on the module board and connected to an input terminal of the reception low noise amplifier, and a wall body made of plated metal and disposed on the module board. The wall body is disposed between the first inductance element and the second inductance element.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takanori Uejima
  • Patent number: 11373810
    Abstract: In a multilayer ceramic capacitor, a first segregation defined by at least one metal element selected from a group consisting of Mg, Mn, and Si is present at each of an end in a length direction of a first internal electrode layer not connected to a second external electrode and an end in a length direction of a second internal electrode layer not connected to a first external electrode. A second segregation defined by at least one metal element selected from a group consisting of Mg, Mn, and Si is present at each of an end of the first internal electrode layer in a width direction and an end of the second internal electrode layer in the width direction.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yuta Saito, Yuta Kurosu, Masahiro Wakashima, Daiki Fukunaga, Yu Tsutsui
  • Patent number: 11373806
    Abstract: A film capacitor that includes a dielectric resin film and a metal layer on one surface of the dielectric resin film. The dielectric resin film has a crosslink density at 225° C. of 2700 mol/m3 or more, or the dielectric resin film has a storage elastic modulus at 125° C. of 1.1 GPa or more.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: June 28, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Tomomichi Ichikawa, Tomoki Inakura, Shinichi Kobayashi
  • Publication number: 20220199557
    Abstract: In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shunji YOSHIMI, Satoshi GOTO, Mikiko FUKASAWA
  • Publication number: 20220199558
    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, at least one switch circuit including a switch is disposed within the first surface. A second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of transistors that are made of a compound semiconductor and form a radio-frequency amplifier circuit. A first conductive protrusion protrudes from the second member on an opposite side to the first member. The first member includes a circuit element disposed between the radio-frequency amplifier circuit and the at least one switch circuit in a plan view, the circuit element not forming the switch circuit.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi GOTO, Shunji YOSHIMI, Mikiko FUKASAWA
  • Publication number: 20220199548
    Abstract: A semiconductor device includes first and second members. In the first member, a first electronic circuit including a semiconductor element is formed. The second member is joined to an area of part of a first surface of the first member, and includes a second electronic circuit including a semiconductor element formed of a semiconductor material different from that of the semiconductor element of the first electronic circuit. An interlayer insulating film covers the second member and an area of the first surface of the first member to which the second member is not joined. An inter-member connection wire on the interlayer insulating film couples the first and second electronic circuits through an opening in the interlayer insulating film. A shield structure including a first metal pattern disposed on the interlayer insulating film shields a shielded circuit, which is part of the first electronic circuit, in terms of radio frequencies.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi GOTO, Masayuki Aoike, Mikiko Fukasawa
  • Publication number: 20220200542
    Abstract: A power amplifier comprising a first member and a second member including a compound semiconductor region joined to a first face of the first member including a semiconductor region. The second member includes an amplifier circuit including a compound semiconductor element, and multiple clamp diodes connected in multiple stages and between an output port of the amplifier circuit and ground. The first member includes a switch, connected between an extension point, which is a middle point of the multiple clamp diodes and the ground, a temperature sensor, and a switch control circuit which performs on-off control of the switch based on a result of measurement by the temperature sensor. The extension point is connected to the switch via a path including an inter-member connection wire on an interlayer insulating film from the first face of the first member to a surface of the second member.
    Type: Application
    Filed: December 14, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Takayuki TSUTSUI, Masao KONDO
  • Publication number: 20220199484
    Abstract: In a semiconductor device, when a first surface of a first member is viewed in plan, a plurality of circuit blocks are disposed in an inner region of the first surface. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes one or more circuit blocks. A conductive protrusion protrudes from the second member on an opposite side to the first member. One of the circuit blocks in the second member constitutes a first amplifier circuit including a plurality of first transistors that are connected in parallel to each other. At least one of the circuit blocks in the first member overlaps at least one circuit block in the second member in a plan view.
    Type: Application
    Filed: December 17, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mikiko FUKASAWA, Satoshi GOTO, Shunji YOSHIMI
  • Publication number: 20220200548
    Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mikiko FUKASAWA, Satoshi GOTO, Shunji YOSHIMI, Yuji TAKEMATSU, Mitsunori SAMATA