Abstract: Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.
Abstract: Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.
Abstract: The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.
Type:
Grant
Filed:
November 10, 2016
Date of Patent:
July 24, 2018
Assignee:
Nanosys, Inc.
Inventors:
John J. Curley, Tim Slugocki, Charlie Hotz
Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.
Type:
Application
Filed:
March 5, 2018
Publication date:
July 12, 2018
Applicant:
Nanosys, Inc.
Inventors:
Jason Hartlove, Veeral Hardev, Shihai Kan, Jian Chen, Jay Yamanaga, Christian Ippen, Wenzhuo Guo, Charles Hotz, Robert Wilson
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
Type:
Application
Filed:
December 22, 2017
Publication date:
June 7, 2018
Applicant:
Nanosys, Inc.
Inventors:
Wenzhuo GUO, Jian CHEN, Robert DUBROW, William P. FREEMAN
Abstract: The present invention relates to silicone polymer ligands for binding to quantum dots. The silicone polymer ligands contain a multiplicity of amine, carboxy, and/or phosphine binding groups suitable for attachment to quantum dots. The present invention also describes a process for the preparation of quantum dot binding ligands.
Abstract: The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices.
Type:
Grant
Filed:
February 19, 2015
Date of Patent:
March 6, 2018
Assignee:
Nanosys, Inc.
Inventors:
Robert S. Dubrow, Jian Chen, Veeral D. Hardev, Hans Jurgen Hofler, Ernest Lee
Abstract: The present invention provides methods for hermetically sealing luminescent nanocrystals, as well as compositions and containers comprising hermetically sealed luminescent nanocrystals. By hermetically sealing the luminescent nanocrystals, enhanced lifetime and luminescence can be achieved.
Abstract: Embodiments of a population of buffered barrier layer coated nanostructures and a method of making the nanostructures are described. Each of the buffered barrier layer coated nanostructures includes a nanostructure, an optically transparent buffer layer disposed on the nanostructure, and an optically transparent buffered barrier layer disposed on the buffer layer. The buffered barrier layer is configured to provide a spacing between adjacent nanostructures in the population of buffered barrier layer coated nanostructures to reduce aggregation of the adjacent nanostructures. The method for making the nanostructures includes forming a solution of reverse micro-micelles using surfactants, incorporating nanostructures into the reverse micro-micelles, and incorporating a buffer agent into the reverse micro-micelles.
Type:
Application
Filed:
June 21, 2017
Publication date:
December 28, 2017
Applicant:
Nanosys, Inc.
Inventors:
Shihai KAN, Jay YAMANAGA, Charles HOTZ, Christian IPPEN, Wenzhuo GUO
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Type:
Grant
Filed:
February 8, 2016
Date of Patent:
October 31, 2017
Assignee:
Nanosys, Inc.
Inventors:
Robert S. Dubrow, William P. Freeman, Ernest Lee, Paul Furuta
Abstract: Embodiments of a device and a method of forming the same are described. The device includes a backlight unit and an image generating unit. The backlight unit includes an optical cavity having a top side, a bottom side, and side walls. The backlight unit further includes an array of light sources coupled to the optical cavity and a quantum dot film positioned within the optical cavity. The quantum dot film is configured to process, light received from the array of light sources and the backlight unit is configured to transit the processed light to the image generating unit. The method includes providing an optical cavity having a top side, a bottom side, and side walls. The method further includes coupling an array of light sources to the optical cavity and supporting a quantum dot film within the optical cavity.
Type:
Application
Filed:
April 4, 2017
Publication date:
September 21, 2017
Applicant:
Nanosys, Inc.
Inventors:
Ernest LEE, Robert E. WILSON, Steven GENSLER
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Type:
Grant
Filed:
February 8, 2016
Date of Patent:
September 5, 2017
Assignee:
Nanosys, Inc.
Inventors:
Robert S. Dubrow, William P. Freeman, Ernest Lee, Paul Furuta
Abstract: The present invention provides light-emitting diode (LED) devices comprises compositions and containers of hermetically sealed luminescent nanocrystals. The present invention also provides displays comprising the LED devices. Suitably, the LED devices are white light LED devices.
Type:
Grant
Filed:
January 25, 2013
Date of Patent:
June 13, 2017
Assignee:
Nanosys, Inc.
Inventors:
Robert S. Dubrow, Jian Chen, Veeral D. Hardev, H. Jurgen Hofler, Ernest Lee
Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.
Type:
Application
Filed:
December 2, 2016
Publication date:
June 8, 2017
Applicant:
Nanosys, Inc.
Inventors:
Jason HARTLOVE, Veeral Hardev, Shihai Kan, Jian Chen, Jay Yamanaga, Christian Ippen, Wenzhuo Guo, Charles Hotz, Robert Wilson
Abstract: Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.
Type:
Application
Filed:
December 2, 2016
Publication date:
June 8, 2017
Applicant:
Nanosys, Inc.
Inventors:
Shihai KAN, Jay Yamanaga, Charles Hotz, Jason Hartlove, Veeral Hardev, Jian Chen, Christian Ippen, Wenzhuo Guo, Robert Wilson
Abstract: Embodiments of a device and a method of forming the same are described. The device includes a backlight unit and an image generating unit. The backlight unit includes an optical cavity having a top side, a bottom side, and side walls. The backlight unit further includes an array of light sources coupled to the optical cavity and a quantum dot film positioned within the optical cavity. The quantum dot film is configured to process light received from the array of light sources and the backlight unit is configured to transit the processed light to the image generating unit. The method includes providing an optical cavity having a top side, a bottom side, and side walls. The method further includes coupling an array of light sources to the optical cavity and supporting a quantum dot film within the optical cavity.
Type:
Grant
Filed:
March 4, 2016
Date of Patent:
May 23, 2017
Assignee:
Nanosys, Inc.
Inventors:
Ernest Lee, Robert E. Wilson, Steven Gensler
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
Type:
Grant
Filed:
March 26, 2015
Date of Patent:
April 25, 2017
Assignee:
Nanosys, Inc.
Inventors:
Wenzhuo Guo, Jian Chen, Robert Dubrow, William P. Freeman
Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
Type:
Application
Filed:
February 8, 2016
Publication date:
December 1, 2016
Applicant:
Nanosys, Inc.
Inventors:
Robert S. DUBROW, William P. FREEMAN, Ernest LEE, Paul FURUTA
Abstract: Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
Type:
Grant
Filed:
October 7, 2014
Date of Patent:
October 18, 2016
Assignee:
Nanosys, Inc.
Inventors:
Erik C. Scher, Mihai A. Buretea, William P. Freeman, Joel Gamoras, Baixin Qian, Jeffrey A. Whiteford
Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
Type:
Application
Filed:
September 28, 2015
Publication date:
April 7, 2016
Applicant:
Nanosys, Inc.
Inventors:
Wenzhuo Guo, Jian Chen, Robert Dubrow, William P. Freeman