Abstract: The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.

Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Abstract: Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.

Abstract: A display device is provided having a quantum dot formed directly on a surface or substrate of a backlight unit, without requiring an intervening layer. An optically transmissive layer is formed thereon. The quantum dot film may be provided that includes a population of optical features to permit the omission of additional films, such as a separate optical film. A population of optical features may include a population of embedded microspheres to achieve optical effects, to improve the overall thickness uniformity of the quantum dot film, or both. Additionally or alternatively, the quantum dot film may be provided having optical features embossed thereon, such as reflective and/or refractive features, prisms, grooves, grooved prisms, lenticular lenses, micro-lenses, micro-spheres, any other lenses, pitches, or other suitable brightness enhancement and/or optical features. Thereby, a separate optical film may be omitted from the overall device structure.

Abstract: Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

Abstract: The present invention provides methods for hermetically sealing luminescent nanocrystals, as well as compositions and containers comprising hermetically sealed luminescent nanocrystals. By hermetically sealing the luminescent nanocrystals, enhanced lifetime and luminescence can be achieved.

Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Abstract: Embodiments of a device and a method of forming the same are described. The device includes a backlight unit and an image generating unit. The backlight unit includes an optical cavity having a top side, a bottom side, and side walls. The backlight unit further includes an array of light sources coupled to the optical cavity and a quantum dot film positioned within the optical cavity. The quantum dot film is configured to process light received from the array of light sources and the backlight unit is configured to transit the processed light to the image generating unit. The method includes providing an optical cavity having a top side, a bottom side, and side walls. The method further includes coupling an array of light sources to the optical cavity and supporting a quantum dot film within the optical cavity.

Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

Abstract: Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.

Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Abstract: The present invention provides methods for hermetically sealing luminescent nanocrystals, as well as compositions and containers comprising hermetically sealed luminescent nanocrystals. By hermetically sealing the luminescent nanocrystals, enhanced lifetime and luminescence can be achieved.

Abstract: Disclosed herein are display systems comprising light-emitting, diodes (LEDs), suitably blue light LEDs, which demonstrate increased optical power output. In embodiments, the display systems include compositions comprising phosphors, including luminescent nanocrystals.

Abstract: The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and a thin inner shell layer. The nanostructures may have an additional outer shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.

Abstract: Systems and methods that provide compensation for ambient light in a location of a display device are described. According to various embodiments, a method of compensating for ambient light in a display device is provided. According to the method, an ambient light measurement may be received. The ambient light measurement may include information concerning the intensity of the ambient light present at the location of the display device, the spectrum of the ambient light present at the display device (e.g., color temperature, white balance, or wavelength), and/or both an intensity and a spectrum of the ambient light.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core are provided. Also provided are methods of increasing the sphericity of nanostructures comprising subjecting nanocrystal cores to an acid etch step, an annealing step, or a combination of an acid etch step and an annealing step.

Abstract: Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.

Abstract: The present invention provides a method of producing nanostructure compositions and nanostructure films. The method includes adjusting white point of the nanostructure films in a continuous process. The present invention also provides an apparatus for preparing a nanostructure film for real-time white point adjustment.

Abstract: Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.