Abstract: This application relates to a process to suppress the impurity diffusion through gate oxide on silicided amorphous-Si gate structures that utilize the silicide layers as the implantation barrier to minimize the impurity diffusion by reducing the projectile range and implant-induced defects, resulting in smaller flat-band voltage(VFB) shift and better characteristics of the breakdown field(Ebd) and charge to breakdown(Qbd). In addition, the amorphous-Si underlying layer is simultaneously kept during the formation of a low-temperature self-aligned silicide (SAD) process to further retard the impurity diffusion. Hence, the usage of such bilayered silicide/amorphous-Si films could effectively retard the impurity diffusion, by combining both effects of the amorphous-Si layer and the silicide process or inducing other undesirable effects such as the increase of gate sheet resistance.

Abstract: A method for selectively oxidizing hydrogen sulfide to elemental sulfur is disclosed. The elemental sulfur can be effectively recovered from a gas mixture containing hydrogen sulfide in the presence of a multi-component catalyst. The multi-component catalyst includes an antimony-containing substance and a vanadium-and-magnesium-containing material. The antimony containing substance may be antimonous oxide (Sb2O3) or antimony tetraoxide (&agr;-Sb2O4), and the vanadium and magnesium containing material may be magnesium pyrovanadate (Mg3V2O8) or Mg2V2O7.

Abstract: The invention provides a set of two PCR primers designed based on a DNA sequence of a gene encoding malic acid dehydrogenase and a specific DNA of Salmonella typhimurium. The invention provides also a DNA probe specific for the above-mentioned PCR primers. Finally, a PCR method using above-mentioned primers is provided for the rapid and specific detection of Salmonella typhimurium in food and clinical specimens such as human fecal specimens. Said PCR method comprises further a Southern hybridization assay for detecting PCR products. The whole process could be shortened from 5-7 days for BAM method to 1-2 days.

Abstract: A method for preparing a barium fluorotitante (BaTiF6) powder and depositing a barium titanate (BaTiO3) thin film on a silicon wafer is disclosed. The method includes steps of a) producing a barium fluorotitante powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitante powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.

Abstract: A frequency synthesizer using a multiphase reference signal source consists of three portions: a basic phase locked loop including a variable frequency oscillator, a loop filter, a phase detector, and a frequency divider; a generating circuit including a multiphase reference signal source for providing a reference signal to the basic phase locked loop; and a frequency discriminator and phase modulator. The frequency discriminator facilitates detection of whether the main loop of the frequency synthesizer is approaching a phase locking state for a proper change of the loop bandwidth. The phase modulator is employed to change the output phase of the reference signal source in order to speed up phase locking and make it applicable to creating signals with a rapid frequency switching speed, frequency tuning capability, and fine channel resolution.

Abstract: An apparatus for determining a flow rate of fluid substance discharged from a reserving device includes an instantaneous sensor for measuring an instantaneous state parameter of the fluid substance stored in the reserving device and a data processor electrically connecting with the instantaneous sensor for calculating the flow rate of the fluid substance according to the instantaneous state parameter. The reserving device includes a reservoir for storing the fluid substance, a controlling valve linked to the reservoir for adjusting the flow rate of the fluid substance, and a tube linked to the valve for transporting the fluid substance. The flow rate of the fluid substance is determined by an equation m .

Abstract: A plasma generator is composed of a surface wave resonant cavity and a vacuum cavity. A microwave energy is introduced into the surface wave resonant cavity via a couple hole of the surface wave resonant cavity, thereby causing the surface wave resonant cavity to resonate to bring about an electromagnetic surface wave, which is then guided into the vacuum cavity via a large area quartz or ceramic couple window located at the top of the vacuum cavity, so as to result in the production of a large area planarized plasma by a low pressure gas contained in the vacuum cavity.

Abstract: This invention demonstrates the methods that use semiconductor laser amplifier (SLA) as a wavelength discriminator, as well as several apparatus designed using these methods. The functions of the invented apparatus include wavelength measurement, wavelength tracking, wavelength comparison, and wavelength stabilization and control of lasers. The key concept for which these methods and apparatus work is the variation of the transparent current of a SLA with the wavelength of an incident light. The transparent current of a SLA can be easily detected from the induced voltage across the diode junction when the incident light is intensity-modulated. The incident wavelength can be accurately determined by measuring the transparent current. These methods and apparatus are expected to be very useful in wavelength display for photonic instruments, wavelength control and wavelength registration for photonic networks, and wavelength stabilization for laser diodes.

Abstract: This invention proposed a temperature and optical frequency sensor using two different optical resonators. The fiber with different thermal expansion factor and refractive index can be used to sense the temperature variation. The optical resonators with different cavity lengths can be used to detect the frequency deviation. Applying a laser, a microprocessor and two optical resonators with different thermal expansion factors and resonate lengths, we invent the device which can detect the temperature and frequency simultaneously. Furthermore, the device can provide tunable and highly stabilized light source for optical system application.

Abstract: A structure and producing method of a three-electrode capacitive pressure sensor can integrate and produce sensor capacitor and reference capacitor in the same pressure sensor cavity. This dual capacitor integration structure can cancel off environment interference of the same mode by differentiated circuit. Avoiding connection between upper and lower electrode plates can be achieved through the existence of a third electrode plate. In working pressure interval from 25 psi to 40 psi, the sensitivity of said three-electrode capacitive sensor is a 0.21 pF/psi, while the sensitivity of an ordinary planar connection pressure sensor is 0.05 pF/psi. The merits of said three-electrode capacitive pressure sensor include trivial production procedure and connection with planar and high sensitivity.

Abstract: The present invention discloses a method of forming a metal layer by thermal evaporation or RF reactive sputtering in order to fabricate a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of the ion sensitive field effect transistor with a metal thin film as a light shielding layer is SnO2/metal/SiO2 or SnO2/metal/Si3N4/SiO2, and is able to lower the effect of light successfully.

Abstract: A method is provided for selective oxidation on source/drain regions of transistors on an integrated circuit. The method includes the steps of a) incorporating a neutral species into first kind of the source/drain regions, and b) forming oxidation regions over the first kind of source/drain regions and second kind of the source/drain regions, wherein the oxidation regions over the second kind are thicker than the oxidation regions over the first kind.

Abstract: The present invention relates to the structure and fabrication process of a high-gain monocrystal Silicon Carbide phototransistor applicable at high temperature. In view of the optical gain and applicable temperature of the conventional n-p-n type Silicon Carbide phototransistor are too low for practical usage, the present invention utilizes a newly developed n-i-p-i-n structure to strengthen the intrinsic properties of the element, in order to enhance optical gain of the phototransistor for being able to operate at high temperature steadily.

Abstract: A semiconductor device has an improved schottky barrier junction. The device includes: a substrate; an epitaxial layer covering the substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxidant of a rare earth element; and a metal layer covering the epitaxial layer and forming said schottky barrier junction with said epitaxial layer.

Abstract: The invention concerns a process for producing aquafuel by replacing conventional inflexible carbon bars with thin, flexible and tough carbon fiber bundles as consumptive electrodes which thereby can be sustainedly fed and can produce aquafuel continuously. Such carbon fiber bundle electrodes can be prepared by pultrusion, and electrodes may be further carbonized or graphitized in order to increase the conductivity and gas productivity thereof.

Abstract: A sensitive material-tin oxide (SnO2) obtained by thermal evaporation or by r.f. reactive sputtering is used as a high-pH-sensitive material for a Multi-Structure Ion Sensitive Field Effect Transistor. The multi-structure of this Ion Sensitive Field Effect Transistor (ISFET) includes SnO2/SiO2 gate ISFET or SnO2/Si3N4/SiO2 gate ISFET respectively, and which have high performances such as a linear pH sensitivity of approximately 56˜58 mV/pH in a concentration range between pH2 and pH10. A low drift characteristics of approximately 5 mv/day, response time is less than 0.1 second, and an isothermal point of this ISFET sensor can be obtained if the device operates with an adequate drain-source current. In addition, this invention has other advantages, such as the inexpensive fabrication system, low cost, and mass production characteristics. Based on these characteristics, a disposal sensing device can be achieved. Thus, this invention has a high feasibility in Ion Sensitive Field Effect Transistor.

Abstract: The device concerns measuring the propagation and bending losses that take place in the individual mode of the multi-mode waveguide. The method applied is a new one comprising butt-couple and prism-couple together with phase-modulation method. Electrodes are made on the waveguide, and applied with voltage. The electro-optical effect is used to modulate the effective length of the waveguide in forming a Fabry-Perot etalon. From here, the contrast of the butt-couple's output and the loss can be measured. At the same time, as the prism-couple is able to separate the multiple modes individually, and measure the contrast and loss of each mode through every output mode which are then compared with the butt-couple, each mode's propagation and bending losses values of the multi-mode waveguide can be derived.

Abstract: An inorganic binder and a dissolving agent are put into ceramic powder. They are mixed to form a plastic green mixture. Then the said mixture is formed into a thin green layer. Preferably, this thin green layer will be preheated and dried such that the thin green layer will be hardened due to the bonding effect of the inorganic binder. A portion of the thin green layer exposed under a directed high-energy beam is sintered, preferably by a laser beam, to cause ceramic molecules to bond together locally due to heat fusion. By controlling the scanning path of the high-energy beam, a two-dimensional thin cross section of the ceramic part in arbitrary form can be produced. A second thin ceramic layer can be built onto the first thin ceramic layer and bonded to it by the same method. After multiple repetitions of this procedure a three dimensional ceramic part can be fabricated layer upon layer. The green portion, which is not scanned by the high-energy beam, will be removed with suitable method.

Abstract: A CMOS active pixel sensor with motion detection includes a photo diode, a reset switch, two sample and hold circuits, and two readout circuits. Each sample and hold circuit includes a MOS switch and a capacitor. The readout circuit includes a source follower and a row select switch. The two sample and hold circuits can store current frame pixel data as well as previous frame pixel data, and these two image data can be read out by the two readout circuits. Therefore, the frame difference can be directly obtained in differential mode. This CMOS active pixel sensor can be used in single chip camera systems with motion detection and video compression functions. Furthermore, because of the low supply voltage consideration in the pixel circuit, this CMOS active pixel sensor is suitable for low power applications.

Abstract: The present invention is directed to a method for the production of a transgenic plant of rice crop comprising the steps of infecting an immature embryo of rice crop with the genus Agrobacterium for transformation; co-culturing the infected embryo with a dicot suspension culture during the step of transformation; allowing the transformed embryo to grow into a callus in a selective medium comprising a sufficient amount of a plant growth hormone for the growth of rice crop; and allowing the cultured callus to regenerate root and shoot in a regeneration medium comprising a pre-determined amount of nutrients for the growth of rice crop. The invention is further directed to a transformed rice plant made by methods of this invention.