Abstract: The present invention describes (1) an immortal cell line derived from grouper and a method for establishing the cell line; (2) methods for mass producing and purifying aquatic viruses using the immortal cell line from grouper; (3) an anti-NNV antibody and a method for producing the anti-NNV antibody; and (4) a vaccine of NNV and a method for protecting fish against NNV infection. The present immortal cell line is derived from the grouper and is susceptible to the viral families of Birnaviridae such as Infectious Pancreatic Necrosis Virus (IPNV); Herpesviridae such as Eel Herpes Virus Formosa (EHVF); Reoviridae such as Hard Clam Reovirus (HCRV); and Nodaviridae such as Nervous Necrosis Virus (NNV).

Abstract: A method of forming a gate oxide layer with improved ability to resist process damage increases the reliability and yield of a transistor device. First, a nitrogen-containing gate oxide layer is formed on an element area of a silicon substrate. Then, a polysilicon layer is deposited on the gate oxide layer. Next, a gate doping process and a fluorine ion implantation are performed on the polysilicon layer. Then, a high-temperature tempering procedure is performed to make the fluorine enter the gate oxide layer.

Abstract: The present invention proposes a novel photoacid generator, and a method of undergoing a photoacid-catalyzed reaction of a resin system, e.g. a curing reaction. The photoacid generator has the following structure of formula (I) wherein R′ and R are radicals which enable the photoacid generator (I) forming a compound (II) and a proton acid RH under irradiation: The present invention also discloses positive tone and negative tone photoresists containing the photoacid generator (I).

Abstract: This invention demonstrates an adjustable monolithic multi-wavelength laser diode array formed on a substrate a plurality of diode lasers, each has an active section and two mirrors with similar multiple reflectivity peaks. A phase control section can also be included in each laser for fine tuning of the laser wavelength. Each laser in the laser array can emit light at the same wavelength or can be easily tuned to form an array with multiple wavelengths. To serve as an application example of this invention, sampled grating DBR lasers are designed to form a laser array with adjustable multi-wavelength outputs. By varying from laser to laser the sampling periods of the sampled gratings in each laser, a uniformly-spaced multi-wavelength laser array can be achieved with a simple tuning mechanism. The lasers can also emit light at the same wavelength or be tuned to other wavelengths by tuning the sampled grating mirrors.

Abstract: A double &dgr;-doped In0.34 Al0.66As0.85 Sb0.15/InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 &mgr;A/mm at Vgs=−40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V,respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The gds is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled &dgr;-doped structure, InP channel, In0.34 Al0.66As0.85 Sb0.15 Schottky layer'and to the large conduction-band discontinuity(&Dgr;Ec) at the InAlAsSb/InP heterojunction.

Abstract: The invention discloses a method for producing a nitrogen-silicon containing stainless steel layer on a metal. The method includes a pack cementation process involving the use of silicon nitride, silica and sodium fluoride as the source materials.

Abstract: A process of forming a field emission electrode for manufacturing a field emission array is provided. The process includes steps of (a) providing a substrate having a metal layer thereon, (b) forming a plurality of mask units on the metal layer and partially removing the metal layer uncovered by the mask units, (c) oxidizing a surface of the remained metal layer by an anodic oxidization method for forming a metal oxide layer thereon such that an upper portion of the unoxidized remained metal layer is in the shape of plural conoids, and (d) removing the remained mask units and the metal oxide layer.

Abstract: A structure for being used in measuring a capacitance of a capacitor is provided. The structure includes a plurality of input terminals having an operating voltage and an operating frequency, a first quasi-inverting circuit having a first parasitic capacitor for generating a first current and electrically connected with the input terminals, a second quasi-inverting circuit having a second parasitic capacitor and a first reference capacitor for generating a second current and electrically connected with the first quasi-inverting circuit, and a third quasi-inverting circuit having the capacitor, a third parasitic capacitor and a second reference capacitor for generating a third current and electrically connected with the quasi-inverting circuit.

Abstract: A new technique is provided using only one coating material (pure silicon) to deposit thin films in a high vacuum, and using an ion source with a working gas (or gases) to control the refractive index of the thin film. This new technique can deposit different kinds of optical thin films with different refractive indices or gradient-indices and make different kinds of multilayer interference filters without opening the vacuum chamber during the process. The way of evaporation or sputtering of the coating material or target uses “electron beam evaporation”, “DC or RF magnetron sputtering”, or “ion beam sputtering”, etc. The way of controlling the refractive index of the film involves mixing Ar with O2 and N2 or just the mixture of N2 or O2, and feeding the gases into the ion source, as shown in FIG. 1 and FIG. 2. The amount of gas and the way of feeding are controlled by computer software.

Abstract: This invention concerns a method for production of AlN powder. The reactants discovered in the invention are aluminum powder and a compound which contains NHx (e.g. NH2, NH3, NH4, N2H4, and N2H6 etc.) or halogens and which can be thermally decomposed or vaporized below the melting point of Al (660° C.). These two reactants are mixed at an appropriate ratio and then pressed into a compact with an appropriate shape. These two reactants, after being mixed at an appropriate ratio, may also be placed in a refractory container which has an opening at one end or has porous walls. In preparing the reactant compact or the reactant mixture, a dilutant such as AlN powder may also be added and mixed with the two reactants. This reactant compact or reactant mixture is then placed in a reaction chamber which is filled with nitrogen. By heating the reactant compact or the reactant mixture, the combustion synthesis reaction is ignited and AlN powder is produced.

Abstract: A method for fabricating a quantum dot infrared photodetector by using molecular beam epitaxy is provided. The method includes steps of growing a first gallium arsenide layer as a buffer layer on a gallium arsenide substrate, growing a first undoped aluminum gallium arsenide layer as a blocking layer on the first gallium arsenide layer, growing a quantum dot structure layer on the first undoped aluminum gallium arsenide layer at a specific temperature, and growing a second gallium arsenide layer as a contact layer on the quantum dot structure layer.

Abstract: An apparatus and method of electrochemical polishing a workpiece with ring-form electrode is provided. A mechanism with a tool electrode, a DC power supply and electrolysis-supply tank of the present invention can be installed on the traditional production equipment. The tool electrode is connected with the negative pole of the DC power supply, while the workpiece is connected with the positive pole of the DC power supply and kept a fixed distance from the tool electrode. The electrode or the workpiece advances at a predetermined feeding speed while the workpiece is electrochemically polished. The present invention uses the centrifugal force of rotational tool electrode to discharge electrolytic byproducts, making electrochemical polishing more effective.

Abstract: This invention relates to a process for the preparation of tocopherol concentrates from a material containing tocopherols and free fatty acids. The free fatty acids in the tocopherol-containing material are converted to the alkali metal salts thereof in a specific organic solvent that can not, practically, dissolve the alkali metal salts of fatty acids. The free fatty acids are removed as a precipitate of their alkali salts, and the tocopherols are recovered from the supernatant by removing the solvent. The said specific organic solvents include acetone, ethyl acetate, dimethylformamide, acetonitrile and their mixtures. The alkali salts are preferably sodium and potassium salts.

Abstract: The present invention discloses a rewritable phase-change optical disk having a recording material of a five-element alloy, Te—(Ge,Bi,Sb)—X, wherein X is B (boron) or C (carbon); Te (tellurium) ranges from 47 to 60 atomic percentage (at. %); Ge (germanium) ranges from 12 to 48 at. %; and Si (silicon) together with Sb (antimony) range from 5 to 41 at. %, based on the total atomic number of Te, Ge, Bi and Sb; and B or C range from 0.05 to 4 at. %, based on the total atomic number of Te, Ge, Bi, Sb and X.

Abstract: A process of forming a low dielectric constant (low k) material is disclosed. The process of the present invention comprises introducing silane (SinH2n+2) and fluorocarbon (CmF2m+2) gases, where n=1 to 3 and m=1 to 3, into a chemical vapor deposition (CVD) chamber, thus forming a low dielectric material layer on a substrate having semiconductor devices by the CVD process. An in situ Argon annealing process is then performed in the chamber. The process of the present invention produces a layer having a dielectric constant of 2.5 and good thermal stability.

Abstract: The invention discloses a novel thermostable D-hydantoinase, and relates to the nucleic acid sequence, amino acid sequence and vector constructs of the enzyme. The thermostable D-hydantoinase of the invention shows about 45%-70% identity in amino acid sequence with other D-hydantoinases. The thermostable D-hydantoinase of the invention converts 5′-substituted D-hydantoinase to the corresponding N-carbamoyl-D- and/or -L-&agr;/&bgr;-amino acids, and retains at least 50% activity after 30 days at 50° C. In addition, the enzyme activity can also enhanced by certain divalent cations.

Abstract: In this patent, reaction sintering was used to prepare translucent strontium barium niobate ceramics (SrxBa1-xNb2O6, x=0.2-0.7). High purity powders of strontium carbonate (SrCO3) and barium carbonate (BaCO3) were mixed with niobium oxide (Nb2O5), respectively, at the same mole using ball milling. The mixed powders were dried and ground by a mortar. Thereafter, they were calcined at 800-1050° C. for 1-4 h in air to form strontium niobate (SrNb2O6) and Barium niobate (BaNb2O6), respectively. Precursor powders of strontium niobate (SrNb2O6) and barium niobate (BaNb2O6) were mixed in appropriate ratios and pressed. Compacts were reaction-sintered in a temperature range of 1300 to 1320° C. in O2 and then heat-treated in a temperature range of 1260 to 1275° C. in O2. We also propose the related basic principles and microstructures.

Abstract: A process for preparing 2,6-dimethylphenol from 2,4,6-trimethylphenol is provided. The process includes two steps: (1) selective oxidation of 2,4,6-trimethylphenol to 3,5-dimethyl-4-hydroxybenzaldehyde and (2) deformylation of the resulting benzaldehyde to 2,6-dimethylphenol. In step (1), the 2,4,6-trimethylphenol is reacted with oxygen-containing gases at temperatures of 20 to 200° C. in the presence of an iron-containing catalyst, which has higher 3,5-dimethyl-4-hydroxybenzaldehyde selectivity than the known copper-based catalysts. In step (2), a copper-containing catalyst is used to replace the customarily used precious metal catalysts for the effective deformylation of the 3,5-dimethyl-4-hydroxybenzaldehyde to 2,6-dimethylphenol.

Abstract: A dielectric ceramic material is provided. The ceramic material includes a mixture represented by the formula of Bi2−x(Zn2/3Nb4/3)O7−3x/2(BZN), 0≦x≦0.67, and a flux having an eutectic composition for lowering the sintering temperature of the mixture from 950˜1100° C. to 800˜850° C. The dielectric material has a dielectric constant larger than 45 (∈r>45) and a quality factor larger than 1200 (or Q·f>4500) at 3.5 GHz.

Abstract: A hybrid vehicle having an engine, a starter, a motor/generator, a driving shaft, a compound planetary-gear device and a vehicle control device is disclosed. The vehicle control device is used for powering the hybrid vehicle by the motor/generator alone when a vehicle speed detected by a vehicle speed detection device is below a predetermined switching vehicle speed, and for starting the engine by the starter as well as turning off the motor/generator when the vehicle speed reached the predetermined switching vehicle speed, and for modulating an output -driving torque by controlling a torque and a speed of the motor/generator.