Patents Assigned to National Taiwan University
  • Anomaly flow detection device and anomaly flow detection method
    Patent number: 11539620
    Abstract: An anomaly flow detection device and an anomaly flow detection method thereof are provided.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: December 27, 2022
    Assignee: National Taiwan University
    Inventors: Phone Lin, Xin-Xue Lin, En-Hau Yeh, Chia-Peng Lee, Char-Dir Chung
  • INTERVERTEBRAL FUSION DEVICE
    Publication number: 20220401623
    Abstract: An intervertebral fusion device includes a structural ceramic body. The structural ceramic body has a bottom surface, a top surface, a peripheral surface connected between the bottom surface and the top surface, and at least one pore channel penetrating the bottom surface and the top surface. The inner surface of the pore channel is either a convex curved surface or a funnel-shaped surface. For the pore channel having the convex curved surface, the pore diameter of the pore channel gradually expands from the center of the pore channel to the top surface and the bottom surface. The pore diameter can also gradually expand from the bottom surface to the top surface. The peripheral surface of the structural ceramic body is wavy or zigzag.
    Type: Application
    Filed: July 26, 2021
    Publication date: December 22, 2022
    Applicant: National Taiwan University
    Inventor: Wei-Hsing Tuan
  • Distributed feedback laser array
    Patent number: 11532924
    Abstract: A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: December 20, 2022
    Assignee: National Taiwan University
    Inventors: Chao-Hsin Wu, Chieh Lo
  • Vertical-cavity surface emitting laser for emitting a single mode laser beam
    Patent number: 11532923
    Abstract: A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: December 20, 2022
    Assignee: National Taiwan University
    Inventors: Chao-Hsin Wu, Szu-Yu Min, Hao-Tien Cheng
  • Method for non-resist nanolithography
    Patent number: 11532729
    Abstract: A method for forming a semiconductor device is provided. A first patterned mask is formed on the substrate, the first patterned mask having a first opening therein. A second patterned mask is formed on the substrate in the first opening, the first patterned mask and the second patterned mask forming a combined patterned mask. The combined patterned mask is formed having one or more second openings, wherein one or more unmasked portions of the substrate are exposed. Trenches that correspond to the one or more unmasked portions of the substrate are formed in the substrate in the one or more second openings.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: December 20, 2022
    Assignees: Taiwan Semiconductor Manufacturing Company, National Taiwan University
    Inventors: Miin-Jang Chen, Kuen-Yu Tsai, Chee-Wee Liu
  • Memory device and manufacturing method thereof
    Patent number: 11532669
    Abstract: A memory device includes a transistor and a memory cell. The memory cell includes a bottom electrode, a top electrode, and a dielectric structure. The top electrode is electrically connected to the transistor. The dielectric structure includes a thin portion and a thick portion. The thin portion is sandwiched between the bottom electrode and the top electrode. The thick portion is thicker than the thin portion and between the bottom electrode and the top electrode.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: December 20, 2022
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jenn-Gwo Hwu, Tzu-Hao Chiang
  • Method of manufacturing optical component having micro-structures
    Patent number: 11524472
    Abstract: A method of manufacturing an optical component having micro-structures is described. The method detects a crystallization temperature within a crystallization temperature interval for fully filling the molding material into a mold cavity to rapidly produce the optical element having a micro-structure with a large area.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: December 13, 2022
    Assignee: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Chao-Chang Chen, Cheng-Fan Yu, Chang-Shun Lai, Chien-Yu Hou
  • Robust conjugated-symmetric optical apparatus and design method thereof
    Patent number: 11520104
    Abstract: A robust conjugate symmetric optical apparatus is disclosed. The robust conjugate symmetric optical apparatus comprises a first optical cell set and a second optical cell set. The first optical cell set includes a first plurality of cells, each of which includes a first left half cell and a first right half cell, and the respective first right half cell and the corresponding first left half cells form a first symmetric structure therebetween.
    Type: Grant
    Filed: January 14, 2021
    Date of Patent: December 6, 2022
    Assignee: National Taiwan University
    Inventors: Wen-Jeng Hsueh, Yu-Chuan Lin, Shih-Han Chou
  • Stacked vertically isolated MOSFET structure and method of forming the same
    Patent number: 11515334
    Abstract: A MOSFET structure including stacked vertically isolated MOSFETs and a method for forming the same are disclosed.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: November 29, 2022
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Yu-Shiang Huang, Hung-Yu Yeh, Wen Hung Huang, Chee-Wee Liu
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20220375782
    Abstract: A method includes forming a mask layer above a substrate. The substrate is patterned by using the mask layer as a mask to form a trench in the substrate. An isolation structure is formed in the trench, including feeding first precursors to the substrate. A bias is applied to the substrate after feeding the first precursors. With the bias turned on, second precursors are fed to the substrate. Feeding the first precursors, applying the bias, and feeding the second precursors are repeated.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 24, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chun-Yi CHOU, Po-Hsien CHENG, Tse-An CHEN, Miin-Jang CHEN
  • LIGHT SUPPLY METHOD AND LIGHT SUPPLY SYSTEM FOR PHOTOTHERAPY
    Publication number: 20220370824
    Abstract: A light supply method and a light supply system for phototherapy are provided. The light supply method includes the following. A plurality of light emitting modules of a light source device are driven so that a light source device outputs a first light. The first light is sensed by a light sensing module. A light parameter corresponding to best physiology of a user is received. A light output ratio of the light emitting modules is adjusted based on the light parameter, thereby adjusting the first light to a second light. The light emitting modules respectively have different central wavelengths. A half-height width of a plurality of spectra of the light emitting modules is less than 30 nanometers.
    Type: Application
    Filed: November 11, 2021
    Publication date: November 24, 2022
    Applicant: National Taiwan University of Science and Technology
    Inventors: Chien-Yu Chen, Hung-Wei Chen
  • Use of anthranilic acid derivative as matrix for MALDI mass spectrometry
    Patent number: 11508566
    Abstract: A use of an anthranilic acid derivative as a matrix for a MALDI Mass spectrometry, comprising: preparing a matrix compound represented by the following formula: wherein X is selected from hydrogen and a hydroxyl group, and Y is selected from hydrogen, a methyl group or an acetyl group, provided that when X is hydrogen, Y is hydrogen or an acetyl group, and when X is a hydroxyl group, Y is a methyl group; applying the matrix compound and an analyte onto a sample holder; and analyzing the analyte by the MALDI mass spectrometer.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: November 22, 2022
    Assignee: National Taiwan University
    Inventors: Cheng-Chih Hsu, Pi-Tai Chou, Chuping Lee, Peng-Hsuan Huang, Li-En Lin, Chun-Ying Huang, Ta-Chun Lin
  • Semiconductor device and manufacturing method thereof
    Patent number: 11508572
    Abstract: A method includes forming a dummy gate structure over a wafer. Gate spacers are formed on either side of the dummy gate structure. The dummy gate structure is removed to form a gate trench between the gate spacers. A gate dielectric layer is formed in the gate trench. A gate electrode is formed over the gate dielectric layer. Forming the gate dielectric layer includes applying a first bias to the wafer. With the first bias turned on, first precursors are fed to the wafer. The first bias is turned off. After turning off the first bias, second precursors are fed to the wafer.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: November 22, 2022
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chun-Yi Chou, Po-Hsien Cheng, Tse-An Chen, Miin-Jang Chen
  • 8-phenyl-isoquinolines and pharmaceutical composition thereof used in the treatment of irritable bowel syndrome
    Patent number: 11505529
    Abstract: A series of 8-phenyl-isoquinoline derivatives (I) exhibit high binding affinity to 5-HT7 receptor (5-HT7R) and demonstrate potent antinociceptive activity in two animal models for Irritable Bowel Syndrome (IBS) by intraperitoneal injection (i.p.) or by oral administration (p.o.). These 5-HT7 receptor antagonists are a new class of therapeutic agents for the treatment of IBS.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: November 22, 2022
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventor: Linda Chia-Hui Yu
  • Charge storage and sensing devices and methods
    Patent number: 11502189
    Abstract: Charge storage and sensing devices having a tunnel diode operable to sense charges stored in a charge storage structure are provided. In some embodiments, a device includes a substrate, a charge storage device on the substrate, and tunnel diode on the substrate adjacent to the charge storage device. The tunnel diode includes a tunnel diode dielectric layer on the substrate, and a tunnel diode electrode on the tunnel diode dielectric layer. A substrate electrode is disposed on the doped region of the substrate, and the tunnel diode electrode is positioned between the charge storage device and the substrate electrode.
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: November 15, 2022
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Jenn-Gwo Hwu, Chien-Shun Liao, Wei-Chih Kao
  • Semiconductor device with ferroelectric aluminum nitride
    Patent number: 11502176
    Abstract: Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: November 15, 2022
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Miin-Jang Chen, Tzong-Lin Jay Shieh, Bo-Ting Lin
  • Asynchronous circuits and test methods
    Patent number: 11500018
    Abstract: Circuits, methods, and systems are provided which facilitate testing of asynchronous circuits having one or more global or local feedback loops. A circuit includes a data path and a scan path. The data path has an input configured to receive a data input signal, and a first output. The scan path includes a first multiplexer having a first input configured to receive the data input signal, a latch coupled to an output of the first multiplexer, a scan isolator coupled to an output of the latch, and a second multiplexer having a first input coupled to the first output of the data path and a second input coupled to an output of the scan isolator. The second multiplexer is configured to output a data output signal.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: November 15, 2022
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Ting-Yu Shen, Chien-Mo Li
  • MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20220358980
    Abstract: A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Zong-You LUO, Ya-Jui TSOU, Chee-Wee LIU, Shao-Yu LIN, Liang-Chor CHUNG, Chih-Lin WANG
  • SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF
    Publication number: 20220360222
    Abstract: A device includes a substrate, a first electrode and a second electrode. The first electrode is disposed on the substrate, and configured to receive an input signal. The second electrode is disposed on the substrate, and configured to output an output signal based on the input signal. When the input signal is configured to oscillate within a first range between a first voltage value and a second voltage value with a first frequency, the output signal is an inverted version of the input signal, and has the first frequency. When the input signal is configured to oscillate within a second range including the first voltage value without the second voltage value with the first frequency, the output signal has a second frequency which is approximately twice of the first frequency.
    Type: Application
    Filed: July 22, 2022
    Publication date: November 10, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jenn-Gwo HWU, Ting-Hao HSU
  • Use of known compounds as D-amino acid oxidase inhibitors
    Patent number: RE49340
    Abstract: The invention utilizes virtual screening strategy to seek for current market drugs as anti-schizophrenia therapy drug repurposing. Drug repurposing strategy finds new uses other than the original medical indications of existing drugs. Finding new indications for such drugs will benefit patients who are in needs for a potential new therapy sooner since known drugs are usually with acceptable safety and pharmacokinetic profiles. In this study, repurposing marketed drugs for DAAO inhibitor as new schizophrenia therapy was performed with virtual screening on marketed drugs and its metabolites. The identified and available drugs and compounds were further confirmed with in vitro DAAO enzymatic inhibitory assay.
    Type: Grant
    Filed: May 2, 2019
    Date of Patent: December 20, 2022
    Assignees: National Taiwan University, National Yang Ming Chiao Tung University, National Health Research Institutes
    Inventors: Yufeng Jane Tseng, Yu-Li Liu, Chung-Ming Sun, Hai-Gwo Hwu, Chih-Min Liu, Wen-Sung Lai