Abstract: An object of the present invention is to provide a novel electrochromic device (ECD).

Abstract: An indoor positioning system and method are provided. The indoor positioning method includes: establishing an image database through a BIM model of a target area, and using a trained deep learning model to extract features of a virtual image; after obtaining a captured image in the target area, using the trained deep learning model to extract features thereof, and performing similarity matching with the image database to calculate a spatial position of a most similar image; calculating the most similar image and its essential matrix through multiple sets of feature points, and obtaining capturing positions and capturing pose parameters as positioning results; projecting the BIM model to a tracking captured image, and updating the positioning results and the capturing pose parameters with a visual inertial odometer; and continuously correcting the positioning results and the capturing pose parameters by detecting horizontal and vertical planes from the tracking captured image.

Abstract: A device includes a conductive feature, a first dielectric layer, a via, an etch stop layer, a second dielectric layer, and a conductive line. The first dielectric layer is above the conductive feature. The via is in the first dielectric layer and above the conductive feature. The etch stop layer is above the first dielectric layer. A side surface of the etch stop layer is coterminous with a sidewall of the via. The second dielectric layer is above the etch stop layer. The conductive line is in the second dielectric layer and over the via. The conductive line is in contact with the side surface of the etch stop layer and a top surface of the etch stop layer.

Abstract: An earthquake monitoring system includes a first monitor and a computer system. The first monitor is configured to photograph at least one reference point disposed on a first floor slab of a building to generate a first initial image and a first image stream. The first monitor is disposed on a second floor slab of the building. The computer system is configured to process the first initial image and the first image stream, to obtain a first interlayer relative displacement vector between the first floor and the second floor according to the first image stream and a rotation angle of the first monitor, and output a warning signal according to the first interlayer relative displacement vector.

Abstract: The disclosure provides a primary battery and an electrode assembly thereof. The electrode assembly includes a separator, a positive electrode, and a negative electrode current collector. The separator has a positive electrode side and a negative electrode side opposite to each other. The positive electrode is located at the positive electrode side of the separator, and the positive electrode includes a positive electrode current collector and a positive electrode material. The negative electrode current collector is located at the negative electrode side of the separator. The electrode assembly does not include a negative electrode material before charging or activation.

Abstract: In the porous substrate loaded with porous nano-particles structure and one-step micro-plasma production method thereof, since the micro-plasma system enhances the electron density and promotes reaction speed in the reaction without generating thermal effect, the method may be performed at an atmosphere environment. The nano-particles also can be quickly obtained by aforementioned micro-plasma system. The electromagnetic field generated by the micro-plasma can drive the nano-particles to be loaded onto the porous substrate in a one step, rapid and low cost process to improve the conventional techniques which require a relatively long procedure time and a complicated process.

Abstract: A method for manufacturing a semiconductor device includes forming a source region, a drain region, and a gate dielectric layer and a gate electrode covering a channel region between the source region and the drain region, forming an insulating layer over the source region, the drain region, and the gate electrode, forming first to third vias penetrating the insulating layer and exposing portions of the source region, the drain region, and the gate electrode, respectively, forming a source contact in the first via to electrically connect to the source region, forming a drain contact in the second via to electrically connect to the drain region, and forming a gate contact in the third via to electrically connect to the gate electrode. One or more of the first to third vias is formed by ion bombarding by a focused ion beam and followed by a thermal annealing process.

Abstract: A system for quantitative differential phase contrast microscopy with isotropic transfer function utilizes a modulation mechanism to create a detection light field having a radial or other axial orientation of optical intensity gradient or other distribution. A condenser generates an off-axis light field to project onto an object under examination, thereby generating an object light field, which is then guided to an image capturing device through an objective lens for capturing images. A differential phase contrast algorithm is applied to the images for obtaining a phase, thereby a depth information corresponding to the phase can be obtained to reconstruct the surface profile of the object.

Abstract: Present invention is related to an ultrathin triboelectric nanogenerator having a positive assembly layer and a negative assembly layer electrically connected together. The positive assembly layer comprises a positive layer and a first electrode. The negative assembly layer comprises a negative layer and a second electrode. The said first electrode and the said second electrode are electrically connected with each other. The positive layer could be a foam layer with under 90 ?m thickness and less than 60 ?m pore size. The present invention firstly provides the ultrathin triboelectric nanogenerator with PU foam as the positive layer which could achieve better electrical performance compared to any conventional triboelectric nanogenerator.

Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.

Abstract: A semiconductor device includes a substrate, a 2-D material channel layer, a 2-D material passivation layer, source/drain contacts, and a gate structure. The 2-D material channel layer is over the substrate, wherein the 2-D material channel layer is made of graphene. The 2-D material passivation layer is over the 2-D material channel layer, wherein the 2-D material passivation layer is made of transition metal dichalcogenide (TMD). The source/drain contacts are over the 2-D material passivation layer. The gate structure is over the 2-D material passivation layer and between the source/drain contacts.

Abstract: A tattoo needle structure is provided. A tattoo needle has a plurality of needle tips, an ink holding space is formed by the arrangement of the needle tips, and a multi-component alloy film is deposited on each needle tip of the tattoo needle by sputtering technology, so that when the tattoo needle is dipped into the tattoo ink, the tattoo ink does not stick to the surface of the multi-component alloy film by the hydrophobic property of the multi-component alloy film, and the tattoo ink is contained in the ink holding space by the cohesive property of the tattoo ink. Thus, when the tattoo needle is dipped into the tattoo ink and the tattoo process is performed, the dyeing area of the skin with the tattoo ink is the cross-sectional area of the ink holding space, thereby achieving the technical effect of improving the contouring resolution of a tattoo.

Abstract: A method employs an unmanned aerial vehicle to carry an electromagnetic field measurement system to overcome environmental obstacles in measuring environmental electromagnetic field. The electromagnetic field measurement system senses the electromagnetic field of a spatial position in the environment to generate a sensing signal, then processes the sensing signal to remove the high-frequency electromagnetic interference generated by the operation of the unmanned aerial vehicle itself from the sensing signal, and converts the processed sensing signal into a digital signal. The digital signal is processed to extract at least one wave according to a fundamental frequency and a harmonic order, thereby removing the low-frequency electromagnetic interference from the digital signal. The extracted wave is employed in calculating an environmental electromagnetic field value of the spatial location.

Abstract: The disclosure is directed to spin-orbit torque MRAM structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.

Abstract: A detection kit suitable for detecting a target in a sample is provided. The detection kit includes a syringe, a first reaction container, a second reaction container, and a plurality of fluorescent substances. The syringe is loaded with first organic solvent. The first reaction container is connected to the syringe and is loaded with the sample. The second reaction container is connected to the first reaction container and is loaded with second organic solvent. The fluorescent substances are dispersed in the second organic solvent and emit fluorescence. When the target in the sample is dissolved in the first organic solvent and reacts with the fluorescent substances in the second organic solvent, the fluorescence emitted by the fluorescent substances is quenched.

Abstract: A method is performed by using a master smart scale with a master-slave mode, a remote communication device and a slave smart scale to manage multiple chemicals from a remote place. The master smart scale performs an initialization procedure to obtain an initial weight of one chemical; generate an identification information by reading a radio frequency tag of the chemical; use the identification information to inform the remote communication device to open an input page for users to input a basic information into the master smart scale; and mark the basic information and the initial weight with the identification information. In the master-slave mode, the master smart scale allows receiving the information of the chemical from its slave smart scale. For inquiry, a specific page is opened with the remote communication device to receive and display a statistical data generated from the master smart scale.

Abstract: The disclosure provides an eye state assessment method and an electronic device. The method includes: obtaining an optic disc image area from a first fundus photography and generating multiple optic cup-to-disc ratio assessment results by multiple first models based on the optic disc image area; obtaining a first assessment result of an eye based on the optic cup-to-disc ratio assessment results; performing multiple data augmentation operations on the first fundus photography to generate multiple second fundus photographies; generating multiple retinal nerve fiber layer (RNFL) defect assessment results by multiple second models based on the second fundus photographies; obtaining a second assessment result of the eye based on the RNFL defect assessment results; and obtaining an optic nerve assessment result of the eye based on the first assessment result and the second assessment result.

Abstract: A semiconductor device includes a substrate, a semiconductor strip, an isolation dielectric, a plurality of channel layers, a gate structure, a plurality of source/drain structures, and an isolation layer. The semiconductor strip extends upwardly from the substrate and has a length extending along a first direction. The isolation dielectric laterally surrounds the semiconductor strip. The channel layers extend in the first direction above the semiconductor strip and arrange in a second direction substantially perpendicular to the substrate. The gate structure surrounds each of the channel layers. The source/drain structures are above the semiconductor strip and on either side of the channel layers. The isolation layer is interposed between the semiconductor strip and the gate structure and further interposed between the semiconductor strip and each of the plurality of source/drain structures.

Abstract: A method includes forming a 2-D material semiconductor layer over a substrate; forming source/drain electrodes covering opposite sides of the 2-D material semiconductor layer, while leaving a portion of the 2-D material semiconductor layer exposed by the source/drain electrodes; forming a first gate dielectric layer over the portion of the 2-D material semiconductor layer by using a physical deposition process; forming a second gate dielectric layer over the first gate dielectric layer by using a chemical deposition process, in which a thickness of the first gate dielectric layer is less than a thickness of the second gate dielectric layer; and forming a gate electrode over the second gate dielectric layer.

Abstract: A device includes a substrate, a dielectric structure, a gate electrode, and a drain electrode. The dielectric structure is over the substrate. The dielectric structure includes a first portion, a second portion, and a third portion. The first portion has a first equivalent oxide thickness. The second portion is spaced apart from the first portion and has a second equivalent oxide thickness. The third portion laterally surrounds the first and second portions and has a third equivalent oxide thickness greater than the first equivalent oxide thickness of the first portion. The gate electrode is over the dielectric structure and in contact with the first and third portions of the dielectric structure. The drain electrode is over the dielectric structure and in contact with the second and third portions of the dielectric structure.