Abstract: Disclosed is a light-emitting device including a first electrode; a second electrode opposite to the first electrode; and an organic layer that is formed between the first electrode and the second electrode and includes a light-emitting layer. The second electrode includes a conductive protection layer that is formed on the organic layer so as to protect the organic layer and a conductive main electrode layer that is formed on the protection layer.

Abstract: In a semiconductor manufacturing method that manufactures a coplanar type thin film transistor, a microcrystalline film 10 that will become a channel region is formed on a glass substrate S, a sacrificial silicon oxide 20 film is formed on the microcrystalline film 10, and, in a state in which a surface boundary of the microcrystalline film 10 is protected by the sacrificial silicon oxide film 20, a doped silicon film 30 is built up that will become a source region and a drain region. A photoresist R film is applied on the doped silicon film 30 and planarized. With the sacrificial silicon oxide film 20 in an uncovered state, etching is performed until the microcrystalline film 10 and the doped silicon film 30 reside in approximately the same plane.

Abstract: Disclosed is a shower plate which is formed with a large number of process-gas blowing holes having a simple structure, high machinability and high dimensional accuracy without the risk of unevenness in blowing of a process gas and outbreak of particles, while ensuring constant quality and interchangeability. Through a press forming process, a powder for a ceramic material with a low dielectric constant is formed into a disc-shaped compact having dimensions determined in consideration of a sintering shrinkage value and a machining value. A gas inlet passage 3 and a large number of blowing holes 2 for a compact stage are bored in the disc-shaped compact, and then the disc-shaped compact is sintered. Subsequently, the gas inlet passage 3 and a main hole portion 2b in each of the blowing holes are subjected to grinding to have a surface roughness of Is or less.

Abstract: There is provided a wafer on which a plurality of electronic devices and circuits under test are to be formed, where each circuit under test includes a plurality of transistors under measurement provided in electrically parallel, a selecting section which sequentially selects the respective transistors under measurement, and an output section which sequentially outputs the source voltages of the transistors under measurement sequentially selected by the selecting section.

Abstract: There is provided a device identifying method for identifying an electronic device including therein an actual operation circuit and a test circuit having a plurality of test elements provided therein, where the actual operation circuit operates during an actual operation of the electronic device and the test circuit operates during a test of the electronic device.

Abstract: In a method of manufacturing a metal member, a metal material containing aluminum as a main component is anodized in an anodization solution having a pH of 4 to 10 and containing a nonaqueous solvent having a dielectric constant smaller than that of water and capable of dissolving water, thereby forming a nonporous amorphous aluminum oxide passivation film on a surface of the metal member. The method includes a step of controlling the viscosity of the anodization solution. In the step of controlling the viscosity, the viscosity of the anodization solution is lowered by elevating the temperature of the anodization solution above the room temperature or by adding to the anodization solution a substance having a dielectric constant smaller than that of water and a viscosity lower than that of the nonaqueous solvent.

Abstract: To extend the temperature range for a stable operation without mode hopping and obtain a stable laser oscillation, a laser oscillator is provided. The laser oscillator includes: an optical circulator in which light incident on a first port is exited from the second port, light incident on the second port is exited from a third port, and light incident on a fourth port is exited from the first port; a first optical amplification fiber that amplifies the light exited from the third port because of being excited by an exciting light and injects the same into the first port; a reflective optical filter that reflects light with a predetermined wavelength among the light exited from the second port and injects the same into the second port again; and an pump light source that generates an exciting light to excite the first optical amplification fiber.

Abstract: A microwave plasma processing apparatus 100 includes a plurality of dielectric parts 31, through which microwaves are transmitted via a slot, and gas nozzles 27 disposed at positions lower than the dielectric parts 31. The dielectric parts 31 and the gas nozzles 27 are each constituted with a porous portion and a dense portion. A first gas supply unit supplies argon gas into a processing chamber through porous portions 31P at the individual dielectric parts 31. A second gas supply unit supplies silane gas and hydrogen gas into the processing chamber through porous portions 27P at the gas nozzles 27. The gases decelerate as they travel through the porous portions and, as a result, excessive agitation in the gases can be inhibited. Consequently, uniform plasma is generated and a high quality amorphous silicon film can be formed with the plasma.

Abstract: For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semicon