Abstract: A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers.

Abstract: A laser oscillator includes a ring resonator. The ring resonator includes an optical circulator having first, second, third, and fourth ports and a first optical amplification fiber connected to the optical circulator. Light incident on the first port is exited from the second port, and light incident on the second port is exited from the third port. The fourth port provides an exciting light and injects the exciting light into the ring resonator through the first port. The first optical amplification fiber amplifies light exited from the third port with the exciting light provided by the fourth port. The laser oscillator also includes an optical member connected to the optical circulator. The optical member reflects at least a part of the light exited from the second port and injects the same into the second port again.

Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Abstract: A thin-film transistor (TFT) has a gate insulating film excellent in transparency and flatness. The gate insulating film is formed by a transparent insulating film (131) which is composed of an oxide represented by RxMOy and which is arranged between a gate electrode and a semiconductor layer. The transparent insulating film (131) is made of a coating agent which is composed of one mixed liquid obtained by dissolving or dispersing a condensate, which is obtained by subjecting a compound represented by RxMXm-x (where R represents a non-hydrolyzable substituent, M represents Si, Ti, Al, Zr, Zn, Sn or In, X represents a hydrolyzable substituent, x represents an integer of 0-3, and m represents the valence of M) to a hydrolysis-condensation reaction, in an organic solvent, water or their mixed solvent, or alternatively a coating agent which is obtained by mixing two or more of such mixed liquids.

Abstract: There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

Abstract: A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

Abstract: A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, wherein a concentration of the element in the copper alloy is more than 0.1 and not more than 20 atomic percentage and within a solubility limit of the element in the copper.

Abstract: Provided is a shower plate in which there's no need for a cover plate. The shower plate 105 is disposed in a processing chamber 102 of a plasma processing apparatus, for discharging a plasma excitation gas to generate plasma in the processing chamber 102, and the shower plate 105 includes a horizontal hole 111 for introducing the plasma excitation gas into the shower plate 105 from a gas inlet port 110 of the plasma processing apparatus; and a vertical hole 112 communicating with the horizontal hole 111, wherein the shower plate 105 is formed as a single body.

Abstract: A gas ejected from a sonic nozzle toward the rear surface of a wafer. The flow speed of the gas flowing to the outer circumference side along the rear surface of the wafer is increased between the rear surface of the wafer and a second cup and is kept by Bernoulli's effects. Thus, flapping of wafer is suppressed. Furthermore, a resist solution is prevented from flowing around to the rear surface.

Abstract: The present invention provides a new high-performance composite material that uses inexpensive materials, has high toughness, has a low coefficient of friction, excellent wear resistance, lower electrical resistance, and excellent electromagnetic wave absorption, and corresponding manufacturing method. A sintered body containing 0.1˜90 mass % of carbon nanotubes 2 and 99.9˜10 mass % of alumina-silica ceramic 3. The alumina-silica ceramic 3 contains 99.5˜5 mass % alumina and 0.5˜95 mass % silica. A nanocomposite 1, wherein the nano crystals of the carbon nanotubes 2 and the alumina-silica ceramic 3 are mutually intertwined, exists as a construction element. The carbon nanotubes 2 and alumina-silica ceramic 3 raw materials are placed in a water or alcohol solvent to form a slurry that is then stirred for 3˜180 minutes after which the solvent is removed from this mixture material that is then sintered in a non-oxygenated atmosphere in the temperature range of 800° C.˜1,800° C. for 5 minutes to 5 hours.

Abstract: To extend the temperature range for a stable operation without mode hopping and obtain a stable laser oscillation, a laser oscillator is provided. The laser oscillator includes: an optical circulator in which light incident on a first port is exited from the second port, light incident on the second port is exited from a third port, and light incident on a fourth port is exited from the first port; a first optical amplification fiber that amplifies the light exited from the third port because of being excited by an exciting light and injects the same into the first port; a reflective optical filter that reflects light with a predetermined wavelength among the light exited from the second port and injects the same into the second port again; and an pump light source that generates an exciting light to excite the first optical amplification fiber.

Abstract: Granular calcium oxide and calcium hydroxide which are highly reactive with a halide gas and its decomposition products and favorably employable for filling a gas-fixing unit (32) of an apparatus (3) for fixing a halide gas are, respectively, a granule of porous spherical calcium oxide particles, which has a BET specific surface area of 50 m2/g or more and a total pore volume of pores having a diameter of 2-100 nm in the range of 0.40-0.70 mL/g and a granule of porous spherical calcium hydroxide particles which has a BET specific surface area of 20 m2/g or more and a total pore volume of pores having a diameter of 2-100 nm in the range of 0.25-0.40 mL/g.

Abstract: A multilevel interconnect structure in a semiconductor device comprises a first insulating layer (2) formed on a semiconductor wafer (1), a Cu interconnect layer (4) formed on the first insulating layer (2), a second insulating layer (6) formed on the Cu interconnect layer (4), and a metal oxide layer (5) formed at an interface between the Cu interconnect layer (4) and the second insulating layer (6). The metal oxide layer (5) is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer (4) and then heat-treating the plated layer in an oxidizing atmosphere.

Abstract: A substrate process apparatus that forms a light emitting device configured with an organic layer including a light emitting layer on a substrate to be processed, the organic layer being formed between a first electrode and a second electrode, includes an organic layer forming apparatus wherein the organic layer is formed on the first electrode formed on the substrate to be processed; an electrode forming apparatus wherein the second electrode is formed on the organic layer; and an etching apparatus wherein the organic layer is etched.

Abstract: An orifice changeable pressure type flow rate control apparatus comprises a valve body of a control valve for a pressure type flow rate control apparatus installed between an inlet side fitting block provided with a coupling part of a fluid supply pipe and an outlet side fitting block provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body and the inlet side fitting block, and a fluid outlet side of the valve body and the outlet side fitting block are detachably and hermitically connected respectively so a flow passage for gases through the control valve is formed; and, a gasket type orifice for a pressure type flow rate control apparatus is removably inserted between a gasket type orifice insertion hole provided on the outlet side of the valve body and a gasket type orifice insertion hole of the outlet side fitting block.

Abstract: Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.

Abstract: In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB6 film, can be formed uniformly over a wide area on an electron injection layer by a rotary magnet sputtering apparatus.

Abstract: A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr1 for transferring the photoelectric charges, and a storage capacitor element C connected to the photodiode PD at least through the transfer transistor Tr1 for accumulating, at least through the transfer transistor Tr1, the photoelectric charge overflowing from the photodiode PD during accumulating operation.

Abstract: Provided is a method for managing manufacturing apparatuses used in a managed production line including a plurality of manufacturing processes for manufacturing an electronic device, each of the apparatuses being used in each of the processes, the method including: acquiring a property of a reference device manufactured in a predetermined reference production line including the manufacturing processes to be performed; performing at least one of the manufacturing processes in the managed production line, performing the other manufacturing processes in the reference production line, and manufacturing a comparison device; measuring a property of the comparison device; comparing the measured properties between the reference and the comparison devices; and judging whether the manufacturing apparatus used in the at least one manufacturing process is defective or not, based on a property difference between the reference and the comparison devices.

Abstract: There is provided a manufacturing system for manufacturing an electronic device through a plurality of manufacturing stages. The manufacturing system includes a plurality of manufacturing apparatuses performing processes corresponding to the plurality of manufacturing stages.