Abstract: Certain embodiments described herein include a memory system which can communicate with a host system such as a disk controller of a computer system. The memory system can include volatile and non-volatile memory and a controller which are configured such that the controller backs up the volatile memory using the non-volatile memory in the event of a trigger condition. In order to power the system in the event of a power failure or reduction, the memory system can include a secondary power source which is not a battery and may include, for example, a capacitor or capacitor array. The memory system can be configured such that the operation of the volatile memory is not adversely affected by the non-volatile memory or the controller when the volatile memory is interacting with the host system.

Abstract: According to certain aspects, a memory module is provided having at least one output configured to be operatively coupled to a memory controller of a host computer system. The memory module can be configured to operate in at least two modes comprising an initialization mode during which the memory module executes at least one initialization sequence and an operational mode. The memory module may include a controller circuit configured to cause the memory module to enter the initialization mode. The memory module may also include a notification circuit configured to drive the at least one output while the memory module is in the initialization mode to provide at least one notification signal to the memory controller indicating at least one status of the at least one initialization sequence.

Abstract: A memory module is provided having a plurality of integrated circuit packages. The memory module includes a first thermal conduit in thermal communication with a first set of integrated circuit packages on the first side, and substantially thermally isolated from a second set of one or more integrated circuit packages on the first side. The memory module further includes a second thermal conduit in thermal communication with the set of one or more integrated circuit packages.

Abstract: A load-reducing memory module includes a plurality of memory components such as DRAMs. The memory components are organized into sets or ranks such that they can be accessed simultaneously for the full data bit-width of the memory module. A plurality of load reducing switching circuits is used to drive data bits from a memory controller to the plurality of memory components. The load reducing switching circuits are also used to multiplex the data lines from the memory components and drive the data bits to the memory controller.

Abstract: A memory module that is couplable to a memory controller hub (MCH) of a host system includes a non-volatile memory subsystem, a data manager coupled to the non-volatile memory subsystem, a volatile memory subsystem coupled to the data manager and operable to exchange data with the non-volatile memory subsystem by way of the data manager, and a controller operable to receive read/write commands from the MCH and to direct transfer of data between any two or more of the MCH, the volatile memory subsystem, and the non-volatile memory subsystem based on the commands.

Abstract: A self-testing memory module includes a printed circuit board configured to be operatively coupled to a memory controller of a computer system and includes a plurality of memory devices on the printed circuit board, each memory device of the plurality of memory devices comprising data, address, and control ports. The memory module also includes a control module configured to generate address and control signals for testing the memory devices. The memory module includes a data module comprising a plurality of data handlers. Each data handler is operable independently from each of the other data handlers of the plurality of data handlers. Each data handler is operatively coupled to a corresponding plurality of the data ports of one or more of the memory devices and is configured to generate data for writing to the corresponding plurality of data ports.

Abstract: Data stored in a volatile memory subsystem is backed up redundantly into first and second channels of a non-volatile memory subsystem. The data is retrieved from the volatile memory subsystem upon detection of a trigger condition indicative of real or imminent power loss or reduction and multiple copies are stored in dedicated non-volatile memory channels. The stored copies may be error checked and corrected, and re-written if necessary. The redundantly backed up data can be subsequently retrieved from the non-volatile memory subsystem, error-corrected, and an error-free copy communicated to the volatile memory subsystem.

Abstract: A module is electrically connectable to a computer system. The module includes a first surface and a first plurality of circuit packages coupled to the first surface. The module further includes a second surface and a second plurality of circuit packages coupled to the second surface. The second surface faces the first surface. The module further includes at least one thermal conduit positioned between the first surface and the second surface. The at least one thermal conduit is in thermal communication with the first plurality of circuit packages and the second plurality of circuit packages.

Abstract: Certain embodiments described herein include a memory system which can communicate with a host system such as a disk controller of a computer system. The memory system can include volatile and non-volatile memory and a controller which are configured such that the controller backs up the volatile memory using the non-volatile memory in the event of a trigger condition. In order to power the system in the event of a power failure or reduction, the memory system can include a secondary power source which is not a battery and may include, for example, a capacitor or capacitor array. The memory system can be configured such that the operation of the volatile memory is not adversely affected by the non-volatile memory or the controller when the volatile memory is interacting with the host system.

Abstract: Certain embodiments described herein include a memory system which can communicate with a host system such as a disk controller of a computer system. The memory system can include volatile and non-volatile memory and a controller which are configured such that the controller backs up the volatile memory using the non-volatile memory in the event of a trigger condition. In order to power the system in the event of a power failure or reduction, the memory system can include a secondary power source which is not a battery and may include, for example, a capacitor or capacitor array. The memory system can be configured such that the operation of the volatile memory is not adversely affected by the non-volatile memory or the controller when the volatile memory is interacting with the host system.

Abstract: A circuit includes a first plurality of contacts configured to be in electrical communication with a plurality of electronic devices. The circuit card further includes a flexible portion including a dielectric layer, a second plurality of contacts, and a plurality of electrical conduits extending across a region of the flexible portion and in electrical communication with one or more contacts of the first plurality of contacts and with the second plurality of contacts. The flexible portion further includes an electrically conductive layer extending across the region of the flexible portion. The electrically conductive layer is superposed with the plurality of electrical conduits with the dielectric layer therebetween. The electrically conductive layer does not overlay one or more portions of the dielectric layer in the region of the flexible portion.

Abstract: Certain embodiments described herein include a memory module having a printed circuit board including at least one connector configured to be operatively coupled to a memory controller of a computer system. The memory module further includes a plurality of memory devices on the printed circuit board and a circuit including a first set of ports operatively coupled to at least one memory device. The circuit further includes a second set of ports operatively coupled to the at least one connector. The circuit includes a switching circuit configured to selectively operatively couple one or more ports of the second set of ports to one or more ports of the first set of ports. Each port of the first set and the second set comprises a correction circuit which reduces noise in one or more signals transmitted between the first set of ports and the second set of ports.

Abstract: Systems and methods are described for resolving certain interoperability issues among multiple types of memory modules in the same memory subsystem. The system provides a single data load DIMM for constructing a high density and high speed memory subsystem that supports the standard JEDEC RDIMM interface while presenting a single load to the memory controller. At least one memory module includes one or more DRAM, a bi-directional data buffer and an interface bridge with a conflict resolution block. The interface bridge translates the CAS latency (CL) programming value that a memory controller sends to program the DRAMs, modifies the latency value, and is used for resolving command conflicts between the DRAMs and the memory controller to insure proper operation of the memory subsystem.

Abstract: A memory module according to certain aspects has a plurality of memory devices arranged into one or more logical ranks. Each logical rank may correspond to a set of at least two physical ranks. The memory module can include a circuit operatively coupled to the plurality of memory devices and configured to be operatively coupled to a memory controller of a computer system to receive a logical rank refresh command. In response, the circuit can initiate a first refresh operation for one or more first physical ranks and then initiate a second refresh operation for one or more second physical ranks. The memory module can further include a memory location storing a refresh time (tRFC) value accessible by the memory controller and based at least in part on a calculated maximum amount of time for refreshing the logical rank.

Abstract: An apparatus is provided that includes a plurality of array dies and at least two die interconnects. The first die interconnect is in electrical communication with a data port of a first array die and a data port of a second array die and not in electrical communication with data ports of a third array die. The second die interconnect is in electrical communication with a data port of the third array die and not in electrical communication with data ports of the first array die and the second array die. The apparatus includes a control die that includes a first data conduit configured to transmit a data signal to the first die interconnect and not to the second die interconnect, and at least a second data conduit configured to transmit the data signal to the second die interconnect and not to the first die interconnect.

Abstract: Certain embodiments described herein include a memory module having a printed circuit board including at least one connector configured to be operatively coupled to a memory controller of a computer system. The memory module further includes a plurality of memory devices on the printed circuit board and a circuit including a first set of ports operatively coupled to at least one memory device. The circuit further includes a second set of ports operatively coupled to the at least one connector. The circuit includes a switching circuit configured to selectively operatively couple one or more ports of the second set of ports to one or more ports of the first set of ports. Each port of the first set and the second set comprises a correction circuit which reduces noise in one or more signals transmitted between the first set of ports and the second set of ports.

Abstract: A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system and to provide the first number of chip-select signals to the first number of ranks in response to the phase-locked clock signals, the received bank address signals, the received second number of chip-select signals, and at least one of the received row/column address signals.

Abstract: A circuit is configured to be mounted on a memory module configured to be operationally coupled to a computer system. The memory module has a first number of ranks of double-data-rate (DDR) memory circuits activated by a first number of chip-select signals. The circuit is configurable to receive a set of signals comprising address signals and a second number of chip-select signals smaller than the first number of chip-select signals. The circuit is further configurable to generate phase-locked clock signals, to selectively isolate a load of at least one rank of the first number of ranks from the computer system in response at least in part to the set of signals, and to generate the first number of chip-select signals in response at least in part to the phase-locked clock signals, the address signals, and the second number of chip-select signals.

Abstract: A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated at least in part to a first number of chip-select signals. The circuit is configurable to receive address signals and a second number of chip-select signals from the computer system. The circuit is further configurable to generate and transmit phase-locked clock signals to the first number of ranks, and to generate the first number of chip-select signals in response at least in part to the phase-locked clock signals, the address signals, and the second number of chip-select signals.

Abstract: A circuit is configured to be mounted on a memory module configured to be operationally coupled to a computer system. The memory module has a first number of ranks of double-data-rate (DDR) memory devices configured to be activated concurrently with one another in response to a first number of chip-select signals. The circuit is configurable to receive a set of signals comprising address signals and a second number of chip-select signals, the address signals comprising bank address signals. The circuit is further configurable to monitor command signals received by the memory module, to selectively isolate a load of at least one rank of the first number of ranks from the computer system in response to the command signals, and to provide the first number of chip-select signals to the first number of ranks in response at least in part to the received bank address signals and the received second number of chip-select signals.