Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface on its top surface and incorporating an electrode; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided in the ceramic plate penetrating part and that allows gas to pass inside; a gas introduction passage provided at least inside the electrically conductive plate and communicating with the ceramic plate penetrating part; and an electrically conductive gas passage part provided in the gas introduction passage, being in contact with a bottom surface of the electrically insulating gas passage plug, being electrically continuous with the electrically conductive plate, and that allows gas to pass inside.

Abstract: A gas sensor includes: a sensor element including a sensing part on a side of one end portion thereof; a casing; and a connector disposed in the casing to electrically connect the sensor element to an outside, wherein the casing includes: an outer tube including a main portion in which a reference gas is included and a sealing portion being an end portion having a smaller diameter than the main portion, another end portion of the sensor element protruding to the main portion, a rubber seal member fitted into the sealing portion to seal the outer tube, and a spacer intervening between the seal member and the connector in the outer tube. The spacer includes a concave portion in an end surface on a side having contact with the connector, and has contact with the connector in the end surface except for the concave portion.

Abstract: A dielectric drying method for ceramic formed bodies includes drying a plurality of ceramic formed bodies placed side by side in a direction perpendicular to a conveying direction on upper surfaces of drying tables by conveying the ceramic formed bodies between electrodes of an upper electrode and a lower electrode, and applying a high frequency between the electrodes. In the direction perpendicular to the conveying direction of the ceramic formed body, a distance between the electrodes in two end regions between which a central region is interposed is shorter than a distance between the electrodes in the central region.

Abstract: A solid electrolyte contains M1, M2, and X, where M1 is an element(s) serving as a univalent cation and includes at least one element selected from a group consisting of Li, Na, and K, M2 is at least one element serving as a trivalent cation, and X is at least one element selected from a group consisting of F, Cl, Br, and I. All interaxial angles ?, ?, and ? of a unit cell in a crystal structure are 90°.

Abstract: A solid electrolyte contains Na, M?, M?, and F, where M? is at least one element serving as a trivalent cation, and M? is at least one element serving as a quadrivalent or higher-valent cation.

Abstract: In the production of an MOF membrane complex, seed crystals of a CAU-10 MOF are deposited on a support, an Al source solution that is an aqueous solution containing an Al ion source is prepared, and a ligand solution is prepared in which an organic ligand used for synthesis of the CAU-10 MOS dissolves in a solvent. Then, a starting material solution is prepared by mixing the Al source solution and the ligand solution at a rate that does not cause the starting material solution to become cloudy. The support is immersed in the starting material solution to form an MOF membrane that is the CAU-10 MOF on the support by Solvothermal synthesis.

Abstract: A composite sintered body includes aluminum nitride and spinel. The composite sintered body includes a plurality of crystal grains each containing aluminum nitride, and a grain boundary positioned between the crystal grains adjacent to each other out of the plurality of crystal grains. A thickness of at least part of the grain boundary is 0.6 nm or more.

Abstract: There is provided a battery which includes a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material capable of inserting and extracting carrier ions at 0.1 V (vs. Li/Li+) or higher, and an electrolyte layer disposed between the positive electrode and the negative electrode. At least one of the positive electrode, the negative electrode, and the electrolyte layer contains a solid electrolyte represented by M?aM?bM?cXd, wherein M? is at least one selected from the group consisting of Li, Na, and K; M? is an element that provides a trivalent cation; M? is an element that provides a tetravalent cation; X is at least one selected from the group consisting of F, Cl, Br, and I; and a, b, c, and d satisfy 0.9(3?x)?a?1.1(3?x), 0.9(1?x)?b?1.1(1?x), 0.9x?c?1.1x, 5.4?d?6.6, and 0<x<1.

Abstract: Provided is a gas sensor that prevents risks such as deterioration of airtightness of the interior of an outer tube, rupture of an elastic body, and occurrence of the displacement of a contact point without swaging a rear end side of the outer tube to have a tapered shape. In the gas sensor according to one aspect of the present invention, a diameter of a reduced diameter portion formed on a rear end side of a tubular body and swaging the elastic body is constant in the axial direction, and a value of a comprehensive parameter which is an index for evaluating the deformation of the elastic body is 0.038 or more and 0.171 or less.

Abstract: A method of operating an electrochemical device includes the steps of: applying a first adsorption voltage to a function electrode while supplying a predetermined gas to the function electrode; and switching the first adsorption voltage to a second adsorption voltage higher than the first adsorption voltage while maintaining the supply of the predetermined gas to the function electrode.

Abstract: Provided is a gas sensor that is low in risk of erosion of an elastic body even when the gas sensor is shortened and prevents a lead retaining portion from coming into contact with an inner surface of a through-hole of the elastic body or closing the through-hole. In the gas sensor according to one aspect of the present invention, one diameter-reduced portion for fixing the elastic body to a tubular body is provided, the lead retaining portion is apart from a front end surface of the elastic body by 0.1 mm or more, and a size or the like of each member is adjusted to satisfy a predetermined relational expression, thereby preventing the occurrence of contact misalignment.

Abstract: Electrical insulating properties between adjacent copper plates are improved while a defect of a bonded substrate which is caused by concentration of stress to end portions of the copper plates is prevented. A bonded substrate includes a silicon nitride ceramic substrate, a copper plate, and a bonding layer. The copper plate and the bonding layer are disposed on the silicon nitride ceramic substrate. The bonding layer bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer includes: an interplate portion between the silicon nitride ceramic substrate and the copper plate; and a protruding portion protruding from between the silicon nitride ceramic substrate and the copper plate. Exposure of the silicon nitride ceramic substrate is prevented at a position where the protruding portion is disposed.

Abstract: A mixed gas separation method includes supplying a mixed gas containing at least N2, H2, and CO2 and having a CO2 concentration of 30% or less by volume to a first separation membrane that selectively allows passage of H2, supplying the first non-permeated gas to a second separation membrane that selectively allows passage of CO2, and supplying the second non-permeated gas to a CO2 collector that separates and collects CO2 by a separation method other than membrane separation to collect CO2 contained in the second non-permeated gas. The first non-permeated gas has a CO2 concentration that is 5% or more by volume higher than or equal to the CO2 concentration in the mixed gas. The second non-permeated gas has an N2 concentration of 50% or more by volume and an H2 concentration of 30% or less by volume.

Abstract: A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface, wherein warping of a crystal plane of the first surface has a plurality of extremes.

Abstract: Each of one or more types of ceramic raw materials, a grinding medium, and a solvent put in a container are mixed by a rotation-revolution mixer. Alternatively, a production system including a plurality of apparatuses including such a rotation-revolution mixer or another apparatus and a robot system including one or more robots for at least one apparatus among the plurality of apparatuses are operated by a computer according to manufacturing method recipe data representing a ceramic manufacturing method recipe, thereby automatically performing one or more steps among a plurality of steps for preparation of a ceramic raw material.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base having a refrigerant flow channel, and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a distance from a ceiling surface of the refrigerant flow channel to the wafer placement surface at a most downstream part of the refrigerant flow channel is shorter than the distance at a most upstream part of the refrigerant flow channel.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on its upper surface; and a porous plug that is disposed in a plug insertion hole penetrating the ceramic plate in a up-down direction, and allows a gas to flow, wherein the porous plug has a first porous member exposed to the wafer placement surface, and a second porous member having an upper surface covered by the first porous member, the first porous member is higher in purity and smaller in thickness than the second porous member, and the second porous member is higher in porosity than the first porous member.

Abstract: A sensor element includes: an element body having a front end and a back end which are both ends in a longitudinal direction, a lateral face which is a face along the longitudinal direction, an outer lead section disposed on the lateral face; and a dense layer which covers part of the lateral face. The outer lead section has a first region which is covered at least in part by the dense layer. The first region contains zirconia. TM ratio is lower than 2, the TM ratio being a ratio Ht/Hm of a peak height Ht of T-phase to a peak height Hm of M-phase of zirconia in a Raman spectrum measured using Raman spectroscopy, and the dense layer has a thickness less than 11 ?m.

Abstract: There is provided a battery which exhibits an open circuit voltage of 3.0 V or higher after charging, and includes a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material, and an electrolyte layer disposed between the positive electrode and the negative electrode. At least one of the positive electrode, the negative electrode, and the electrolyte layer contains a solid electrolyte represented by M?aM?bM?cXd, wherein M? is at least one selected from the group consisting of Li, Na, and K; M? is an element that provides a trivalent cation; M? is an element that provides a tetravalent cation; X is at least one selected from the group consisting of F, Cl, Br, and I; and a, b, c, and d satisfy 0.9(3?x)?a?1.1(3?x), 0.9(1?x)?b?1.1(1?x), 0.9x?c?1.1x, 5.4?d?6.6, and 0<x<1.