Abstract: A member for semiconductor manufacturing apparatus includes a central ceramic member having a wafer placement surface on an upper surface; an annular outer circumferential ceramic member having a focus ring placement surface on an upper surface; and a conductive base member having a central support joined to the central ceramic member, and an outer circumferential support joined to the outer circumferential ceramic member, wherein an outer circumferential surface of the central ceramic member and an inner circumferential surface of the outer circumferential ceramic member each change in diameter in an up-down direction, and a maximum diameter of the outer circumferential surface of the central ceramic member is smaller than a maximum diameter of the inner circumferential surface of the outer circumferential ceramic member, and larger than a minimum diameter of the inner circumferential surface of the outer circumferential ceramic member, and the central ceramic member is insulating ceramics.

Abstract: A vehicle air conditioning system includes: an air conditioning duct for allowing air from a vehicle interior to flow therethrough; and an air conditioning device disposed within the air conditioning duct. The air conditioning device includes: a honeycomb structure having an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path, at least the partition walls being made of a material having a PTC property; and a cooling member disposed over the outer peripheral wall of the honeycomb structure, the cooling member forming a flow path between the honeycomb structure and the cooling member, the flow path allowing a refrigerant to flow therethrough.

Abstract: A vehicle air conditioning system includes: an air conditioning duct for allowing air from a vehicle interior or a vehicle exterior to flow therethrough, the air conditioning duct having two or more branched paths; an air conditioning device disposed at each of the two or more branched paths; a heat pump cycle having a condenser for performing heat exchange between heat of the refrigerant and the air and an evaporator for performing heat exchange between cold of the refrigerant and the air, the condenser and the evaporator being disposed in the air conditioning duct connected to the vehicle interior on a downstream side of the air conditioning device; and a control unit for controlling the air conditioning device and the heat pump cycle in response to an operation mode.

Abstract: The wafer placement table includes a ceramic plate, a thermal diffusion plate, a first adhesive layer, a cooling plate, and a second adhesive layer. The ceramic plate has a wafer placement surface on its upper surface, and includes built-in electrodes. The thermal diffusion plate is provided on the lower surface of the ceramic plate. The first adhesive layer bonds the ceramic plate and the thermal diffusion plate together. The cooling plate is provided on the lower surface of the thermal diffusion plate, and internally includes a refrigerant flow path. The second adhesive layer is provided between the thermal diffusion plate and the cooling plate. The second adhesive layer is provided with an adhesive part and a hollow part, the adhesive part bonding the thermal diffusion plate and the cooling plate together, the hollow part being a gap provided between the thermal diffusion plate and the cooling plate.

Abstract: A heat treatment furnace may include: a furnace body comprising a heat treatment space; a plurality of movable members; a pusher configured to push the plurality of movable members forward; and a plurality of gas supplying pipes each comprising a gas supplying opening, the gas supplying pipes being aligned in a left-right direction. Each of the movable members may be positioned between a corresponding pair of the gas supplying pipes adjacent in the left-right direction. The heat treatment furnace may include a plurality of gas exhausting openings through which the furnace atmosphere gas in the heat treatment space is exhausted to outside of the furnace body. As the furnace body is viewed in the front-rear direction, the gas exhausting openings may be positioned directly above the intervals between stacks of objects aligned in the left-right direction on the movable members.

Abstract: A wafer support table includes a ceramic base having a wafer placement surface and including an RF electrode and a heater electrode embedded; a hole extending from a surface of the ceramic base opposite the wafer placement surface toward the RF electrode; and an RF rod having a top end joined to the RF electrode exposed to a bottom of the hole or joined to a conductive member connected to the RF electrode; wherein the RF rod is a hybrid rod including a first rod member that is made of Ni and constitutes a portion of the RF rod from the top end to a predetermined position and a second rod member that is joined to the first rod member and constitutes a portion of the RF rod from the predetermined position to the base end, and the second rod member is a non-magnetic core member with an oxidation-resistant film.

Abstract: A heat exchange member including: a honeycomb structure body including: partition walls extending from a first end surface to a second end surface to define cells forming flow passages for a first fluid; and an outer peripheral wall; and a covering member configured to cover the outer peripheral wall of the honeycomb structure body. The partition walls and the outer peripheral wall contain ceramic as a main component, and the outer peripheral wall surface has a peak count RPc according to JIS B 0601:2013 set to 55 pks/cm or larger.

Abstract: A member for semiconductor manufacturing apparatus includes: an upper plate that has a wafer placement surface, contains no electrode, and is a ceramic material plate; an intermediate plate that is provided on a surface of the upper plate, opposite to the wafer placement surface, that is used as an electrostatic electrode, and that is a conductive material plate; and a lower plate that is joined to a surface of the intermediate plate, opposite to the surface on which the upper plate is provided, and that is a ceramic material plate.

Abstract: An electrostatic chuck includes a ceramic plate through holes which penetrate the plate, and a pair of positive and negative electrodes. The plate has division areas virtually divided, which are equal in number to the number of the through holes. The positive electrode and the negative electrode have pairs of positive and negative helical electrode portions, and for each of the division areas, one of the pairs is provided in parallel so as to cover the entirety of the division area from each of a positive electrode start point and a negative electrode start point which are close to one of the through holes. The positive electrode is such that the positive helical electrode portions are connected via outer circumferential portions of the plate, and the negative electrode is such that the negative helical electrode portions are connected via a central portion of the plate.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on an upper surface, an electrostatic electrode embedded in the ceramic plate, an electrode lead-out portion embedded in the ceramic plate and extending downward from the electrostatic electrode, a terminal hole extending from a lower surface of the ceramic plate to the electrode lead-out portion, a terminal in the terminal hole, a conductive bonding portion located between the terminal and the electrode lead-out portion and bonding the terminal and the electrode lead-out portion together. The terminal hole has a terminal hole tapering surface that tapers toward a bottom of the hole, and the terminal hole tapering surface intersects a lateral surface of the electrode lead-out portion.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate including a horizontal and circular wafer placement surface, and a horizontal and annular focus ring placement surface provided on an outer circumference of the wafer placement surface at a position lower than the wafer placement surface by one step, and a connection part that connects the wafer placement surface and the focus ring placement surface; and a cooling plate provided on a lower surface of the ceramic plate, wherein the connection part has a lateral surface of a circular truncated cone with a diameter that increases from the wafer placement surface to the focus ring placement surface, and the diameter of the upper surface of the circular truncated cone matches the outer diameter of the wafer placement surface, and the diameter of the lower surface of the circular truncated cone matches the inner diameter of the focus ring placement surface.

Abstract: Provided is a ceramic plate including the ceramic substrate containing aluminum oxide and/or aluminum nitride; the inner electrode embedded inside the ceramic substrate containing an electrode base material, a thermal expansion coefficient modifier, and Ti; and wherein the ceramic substrate has a Ti diffusion region in which Ti is diffused around the inner electrode.

Abstract: A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

Abstract: A composite substrate includes a supporting substrate composed of quartz, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an interface layer along a bonding interface between the supporting substrate and the piezoelectric material substrate. The interface layer has amorphous structure and contains constituent components including silicon, oxygen and at least one of tantalum and niobium. The interface layer has concentrations of hydrogen atoms, nitrogen atoms and fluorine atoms of 1×1018 atoms/cm3 or higher and 5×1021 atoms/cm3 or lower, respectively.

Abstract: Provided is a solid electrolyte which is identified as 3LiOH·Li2SO4 by diffractometry. The solid electrolyte further contains boron.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×1015?/? or higher.

Abstract: A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.

Abstract: There is provided a neutron-generating target, including a beryllium layer composed of a plurality of beryllium crystal grains having a columnar structure that has grown in a thickness direction, wherein the beryllium layer has gaps between the plurality of beryllium crystal grains.

Abstract: There is provided a multizone ceramic heater including a ceramic plate including an inner zone and an outer zone, an inner zone heater circuit embedded in the inner zone, an outer zone heater circuit embedded in the outer zone, one pair of first feeding terminals for feeding power to the inner zone heater circuit, one pair of second feeding terminals for feeding power to the outer zone heater circuit, and one pair of jumpers embedded in the inner zone of the ceramic plate, one of which connects one of the second feeding terminals and the outer zone heater circuit by a first junction and the other of which connects the other of the second feeding terminals and the outer zone heater circuit by a second junction. Thicknesses of the jumpers are from 1.2 to 3.0 times a thickness of the outer zone heater circuit.

Abstract: An electrostatic chuck heater includes an electrostatic chuck including an electrostatic electrode embedded in a ceramic sintered body, a cooling member cooling the electrostatic chuck, and a heater layer disposed between the electrostatic chuck and the cooling member and including a plurality of metal layers embedded therein in multiple stages, the metal layers including resistance heating element layers. The heater layer includes a ceramic insulating layer with a thickness of 2 ?m or more and 50 ?m or less between the metal layers.