Abstract: A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) ??Formula (1) wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R1 and R2 are optionally bonded together to form a ring structure; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of
July 12, 2022
November 24, 2022
NISSAN CHEMICAL CORPORATION
Wataru SHIBAYAMA, Hayato HATTORI, Ken ISHIBASHI, Makoto NAKAJIMA
Abstract: An object of the present invention is to provide a method for producing a peptide with high efficiency, and a method for producing a peptide which comprises the following steps (1) and (2): (1) a step of mixing an N-protected amino acid or an N-protected peptide with a carboxylic acid halide represented by the formula (I) (wherein X represents a halogen atom, R1, R2 and R3 each independently represent an aliphatic hydrocarbon group which may have a substituent, and a total number of the carbon atoms in R1, R2 and R3 is 3 to 40); and (2) a step of mixing the product obtained in the step (1) and a C-protected amino acid or a C-protected peptide is provided.
September 14, 2020
November 24, 2022
NISSAN CHEMICAL CORPORATION, PEPTIDREAM INC.
Abstract: Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X1 represents —N(R1)—; X2 represents —N(R2)—; X3 represents —CH(R3)—; X4 represents —CH(R4)— etc.; R1, R2, R3, and R4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R5, R6, R9, and R10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R7 and R8 represent benzene rings or naphthalene rings; and n and o are 0 or 1).
Abstract: A method for producing a medium composition for suspension culture of an adherent cell, including the following steps: (i) a step of making an extracellular matrix carried on a nanofiber composed of water-insoluble polysaccharides, (ii) a step of adding the extracellular matrix-carrying nanofiber obtained in step (i) to a medium is provided by the present invention.
Abstract: An indicator lamp of the present invention includes a lamp body, a light source unit disposed inside the lamp body, and a light transmissive resin member disposed at a position for transmitting light that is emitted from the light source unit and for outputting the light from the lamp body. The light source unit emits red light having a maximum value of light intensity at a wavelength of 600 nm or longer and 700 nm or shorter. The light transmissive resin member has an L* value of 35 or less, a transmittance of light having a wavelength of 675 nm of 90% or greater and a total light transmittance of 5% or greater in the state in which an optical path length of transmitting light is 2 mm. This configuration provides an indicator lamp with excellent design that shows its presence by showing a red chromatic tone when a light source is turned on and that shows a black color tone when the light source is turned off.
July 30, 2020
November 17, 2022
NISSAN MOTOR CO., LTD., MITSUBISHI CHEMICAL CORPORATION
Abstract: A resist underlayer film having an especially high dry etching rate; a composition for forming the resist underlayer film; a method for forming a resist pattern; and a method for producing a semiconductor device. The composition for forming the resist underlayer film has a solvent and a product of reaction between an epoxidized compound and a heterocyclic compound containing at least one moiety having reactivity with an epoxy group. It is preferable that the heteroring contained in the heterocyclic compound be selected from among furan, pyrrole, pyran, imidazole, pyrazole, oxazole, thiophene, thiazole, thiadiazole, imidazolidine, thiazolidine, imidazoline, dioxane, morpholine, diazine, thiazine, triazole, tetrazole, dioxolane, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, indole, purine, quinoline, isoquinoline, quinuclidine, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, and carbazole.
Abstract: A polishing composition having silica-based abrasive grains and a polishing method. A polishing composition having silica particles, wherein on the basis of a colloidal silica dispersion of the silica particles, the dispersion has an Rsp of 0.15 to 0.7 as measured using pulse NMR, and the colloidal silica particles have a shape coefficient SF1 of 1.20 to 1.80, wherein Rsp is calculated based on equation (1): Rsp=(Rav?Rb)/(Rb)??(1) (wherein Rsp is an index that indicates water affinity; Rav is an inverse of a relaxation time of the colloidal silica dispersion; and Rb is an inverse of a relaxation time of a blank aqueous solution obtained by removing the silica particles from the colloidal silica dispersion), and the shape coefficient SF1 is calculated based on equation (2): SF1=(area of a circle whose diameter is a maximum diameter of the particle)/(projected area)??(2).
Abstract: A novel production method enables selective production of an isocyanuric acid N-substituted product of interest in one pot, requiring neither multiple steps nor cumbersome treatment, the method producing an N-(hydrocarbon)isocyanuric acid which includes a step N for reacting, in a solvent, a dihalogenated isocyanuric acid derivative with at least one hydrocarbonization agent selected from the group consisting of a halogenated hydrocarbon compound, a pseudo-halogenated hydrocarbon compound, and a dialkyl sulfate compound.
Abstract: A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCH2CH(OH)CH2O— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.
Abstract: A sol of inorganic oxide particles is stably dispersed in a hydrophilic organic solvent containing a hydrocarbon such as a paraffinic hydrocarbon or a naphthenic hydrocarbon. The sol contains a dispersion medium containing an organic solvent containing a C6-18 paraffinic hydrocarbon, a C6-18 naphthenic hydrocarbon, or a mixture of these, a C4-8 alcohol having a carbon chain with a carbon-carbon bond in the molecule in an amount of 0.1 to 5% by mass in the entire dispersion medium, and inorganic oxide particles having an average particle diameter of 5 to 200 nm as measured by dynamic light scattering as a dispersoid, wherein the inorganic oxide particles contain a C1-3 alkyl group bonded to a silicon atom and a C4-18 alkyl group. The paraffinic hydrocarbon is a normal paraffinic hydrocarbon or an isoparaffinic hydrocarbon. The naphthenic hydrocarbon is a saturated aliphatic cyclic hydrocarbon substitutable with a C1-10 alkyl group.
Abstract: A composition for forming a resist underlayer film exhibits strong etching resistance, has a good dry etching rate ratio and a good optical constant, and is capable of forming a film that provides good coverage over a so-called multilevel substrate and that is flat with reduced difference in thickness after embedding. A resist underlayer film uses said composition for forming a resist underlayer film; and a method for producing a semiconductor device. The composition for forming a resist underlayer film contains: a polymer having the partial structure represented by formula (1); and a solvent. (In the formula, Ar represents an optionally substituted C6-20 aromatic group.
Abstract: An object of the present invention is to provide a cryopreservation vessel which has a coating that is capable of inhibiting the adhesion of cells or proteins and is resistant not only to aqueous solvents but also to organic solvents (for example, cryoprotectants, in particular, dimethyl sulfoxide). The invention provides a cell or protein cryopreservation vessel including, on at least a portion of the surface thereof, a coating that includes a repeating unit containing a group represented by the following formula (a), and a repeating unit containing a group represented by the following formula (b) (wherein Ua1, Ua2, Ua3, Ub1, Ub2, Ub3 and An? are as defined in the description and the claims).
Abstract: A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.
Abstract: A resist underlayer film, which, while exhibiting excellent resistance to a resist developer which is a resist solvent or an alkaline aqueous solution, exhibits removability, and preferably solubility, only in wet etching chemicals. This composition for forming a resist underlayer film contains a solvent, a heterocyclic compound having a dicyanostyryl group, a cyclic compound including an amide group, for example, and the reaction product of a heterocyclic compound precursor having an epoxy group and an active proton compound, for example.
Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one acetal structure in a molecule thereof, and forms a protective film exhibiting excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.
Abstract: There are provided a polishing composition that gives, in the step of polishing a wafer, a flat polished surface having a reduced height difference between a central region and a peripheral region (laser mark region) of the wafer, and a method for producing a wafer using the polished composition. A polishing composition comprising water, silica particles, an alkaline substance, and an amphoteric surfactant of formula (1): wherein R1 is a C10-20 alkyl group, or a C1-5 alkyl group containing an amide group; R2 and R3 are each independently a C1-9 alkyl group; and X?is a C1-5 anionic organic group containing a carboxylate ion or a sulfonate ion. Silica particles in the form of an aqueous dispersion of silica particles having a mean primary particle diameter of 5 to 100 nm may be used. A method for producing a wafer, wherein in the step of polishing a wafer, polishing is performed until a height difference between a central region and a peripheral region of the wafer becomes 100 nm or less.
Abstract: The invention provides a method for producing a peptide by (1) removing the N-terminal protective group of an amino acid or peptide compound of formula (I): wherein Y represents a residue of an N-protected amino acid or an N-protected peptide, and each of R1, R2, and R3 independently represents an aliphatic hydrocarbon group which may have a substituent or an aromatic hydrocarbon group which may have a substituent, wherein the total number of carbon atoms in the R1R2R3Si group is 18 to 80, and the R1R2R3SiCH2CH2 group is bonded to the C-terminus of the amino acid or peptide residue in Y; and (2) causing condensation of an N-protected amino acid or an N-protected peptide and the N-terminus of the C-protected amino acid or C-protected peptide obtained in the step (1).
Abstract: A stepped substrate-coating composition for forming a coating film having filling property of a pattern and flattening property including a compound (E) having a partial structure (I) and a partial structure (II) having a hydroxy group formed by a reaction of an epoxy group with a proton-generating compound, a solvent (F), and a crosslinkable compound (H), wherein the partial structure (I) is from Formulae (1-1) to (1-5) or including a partial structure of Formula (1-6) combined with a partial structure of Formula (1-7) or (1-8), and the partial structure (II) is of the following Formula (2-1) or (2-2), wherein the compound (E) contains the epoxy and hydroxy group at a molar ratio (epoxy group)/(hydroxy group) of 0 or more and 0.5 or less, and contains the partial structure (II) so the molar ratio (partial structure (II))/(partial structure (I)+partial structure (II)) is 0.01 or more and 0.8 or less.
Abstract: A purification method for a silicon-containing polymer composition capable of reducing metal impurities in a silicon-containing polymer composition to be treated, while suppressing the weight average molecular weight change before and after the treatment, by treating the silicon-containing polymer composition containing the metal impurities with an ion exchange resin having a specific structure; a silicon-containing polymer composition; and a method for producing a semiconductor device. A purification method for a silicon-containing polymer composition reduced in weight average molecular weight change before and after treatment, said method being treating a silicon-containing polymer composition to be treated containing an organic solvent with an gel-type cation exchange resin. The weight average molecular weight change before and after the treatment is 70 or less. The ion exchange resin preferably has a strongly acidic functional group.
Abstract: An underlayer film-forming composition which exhibits excellent solvent resistance, and which is capable of orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer formed on the substrate, said layer including a block copolymer. The underlayer film-forming composition includes a copolymer which includes: (A) unit structures derived from styrene compounds including tert-butyl groups; (B) unit structures, other than those in (A) above, which are derived from aromatic-containing vinyl compounds which do not include hydroxy groups; (C) unit structures derived from compounds which include (meth)acryloyl groups, and do not include hydroxy groups; and (D) unit structures derived from compounds including crosslink-forming groups. The copolymerization ratios with respect to the whole copolymer are: (A) 25-90 mol %; (B) 0-65 mol %; (C) 0-65 mol %; and (D) 10-20 mol %. Unit structures including aromatics account for 81-90 mol % of (A)+(B)+(C).