Abstract: A lithographic process for the production of a semiconductor device has recently caused a problem in terms of generation of a sublime component (sublimate) derived from a low-molecular-weight compound (e.g., polymer resin, crosslinking agent, or crosslinking catalyst) during baking upon formation of a resist underlayer film from a resist underlayer film-forming composition. The resist underlayer film-forming composition of the present invention uses an organic acid having a fluoroalkyl group or an organic acid salt having a fluoroalkyl group, as a crosslinking catalyst, and thus the resist underlayer film-forming composition containing the crosslinking catalyst can effectively prevent generation of a sublimate derived from a low-molecular-weight component contained in the resist underlayer film during formation of the film.

Abstract: A protective film formation composition contains a polymer having a unit structure represented by formula (1-1), a compound or a polymer having phenolic hydroxy group other than catechol, (C) a thermal acid generator, and (D) a solvent. (Ar represents a benzene, naphthalene, or an anthracene ring; R1 represents a hydroxy, mercapto,amino, halogeno, or an alkyl group that has 1-10 carbon atoms and that may be substituted or interrupted by a hetero atom and may be substituted by a hydroxy group; n1 represents an integer of 0-3; L1 represents a single bond or an alkylene group having 1-10 carbon atoms; E represents an epoxy group; when n2=1, T1 represents a single bond or an alkylene group having 1-10 carbon atoms and may be interrupted by an ether bond, an ester bond, or an amide bond; and when n2=2, T1 represents a nitrogen atom or an amide bond.

Abstract: The present invention is directed to new crystalline forms of Pitavastatin hemicalcium salt, referred to hereinafter as polymorphic Forms A, B, C, D, E and F, as well as the amorphous form. Furthermore, the present invention is directed to processes for the preparation of these crystalline forms and the amorphous form and pharmaceutical compositions comprising these crystalline forms or the amorphous forms.

Abstract: A method for producing a drug substance of crystalline pitavastatin calcium excellent in stability, is presented. In the production of a compound (pitavastatin calcium) represented by the formula (1): The water content is adjusted to a level of from 5 to 15%, and the crystal form is controlled to be crystal form A, thereby to obtain a drug substance excellent in stability.

Abstract: A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for detecting impurities on a surface of a wafer for manufacturing semiconductors includes: a step for coating the surface of the wafer with a film-forming composition, and performing baking to form a film; and then a step for detecting impurities by means of a wafer inspection tool.

Abstract: An adhesive composition for forming an adhesive layer that can bond a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate in a peelable manner, the composition containing a component (A) which is cured through hydrosilylation and a peeling component (B) which contains a component containing an epoxy-modified polyorganosiloxane, wherein the component (A) contains a polysiloxane (A1) including a siloxane unit represented by SiO2 (unit Q) and the like, and a platinum group metal catalyst (A2); and the polysiloxane (A1) contains a polyorganosiloxane (a1) including a siloxane unit represented by SiO2 (unit Q?) and the like, and a polyorganosiloxane (a2) including a siloxane unit represented by SiO2 (unit Q?) and the like, and having a functional group (Si—H) content of 5.0 mol/kg or greater.

Abstract: A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.

Abstract: A method for producing ammonia from nitrogen molecules, by supplying electrons from a power source, protons from a proton source, and nitrogen molecules from a device for supplying nitrogen gas, in the presence of a molecular catalyst and a solid catalyst at the cathode of a production apparatus that performs electrolysis. Regarding the molecular catalyst and the solid catalyst, bis(cyclopentadienyl)titanium dichloride, for example, is used as the molecular catalyst, and a metal catalyst, an oxide catalyst, or a combination thereof is used as the solid catalyst.

Abstract: A composition for forming a resist underlayer film that enables formation of an intended resist pattern, and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film includes: a compound represented by formula (1); a polymer; and an organic solvent. (In formula (1), Y1 represents a single bond, an oxygen atom, a sulfur atom, a halogen atom, or a C1-10 alkylene group which may be substituted with a C6-40 aryl group, or a sulfonyl group, T1 and T2 each represent a C1-10 alkyl group, R1 and R2 each independently represent a C1-10 alkyl group which is substituted with at least one hydroxy group, and n1 and n2 each independently represent an integer of 0-4).

Abstract: A method for producing ammonia involves producing ammonia from molecular nitrogen in a production apparatus for performing electrolysis by supplying electrons from a power source, protons from a proton source and molecular nitrogen from a device for supplying a nitrogen gas while in the presence of a solid catalyst and a complex in a cathode. For example, a molybdenum complex represented by formula (A1) or formula (B2) as the complex, and a platinum catalyst or a platinum catalyst/gold catalyst combination as the solid catalyst are used.

Abstract: A laminate having a semiconductor substrate, a support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate, wherein the release layer is a film formed from a releasing agent composition containing an organic resin, a branched-chain polysilane, and a solvent.

Abstract: There is provided an epoxy composition which has difficulty in precipitating a crystal during storage, is homogeneous and can be stored for a long period; and a cured product of the composition having excellent transparency, heat resistance, and light resistance can be obtained on curing. An ?-type tris-(2,3-epoxypropyl)-isocyanurate crystal including ?-type tris-(2,3-epoxypropyl)-isocyanurate in the crystal in a ratio of 2% by mass to 15% by mass. A method for producing the ?-type tris-(2,3-epoxypropyl)-isocyanurate crystal including step (i) separating ?-type tris-(2,3-epoxypropyl)-isocyanurate contained in a tris-(2,3-epoxypropyl)-isocyanurate solution from the solution as a solid to obtain a crystal with an increased content ratio of ?-type tris-(2,3-epoxypropyl)-isocyanurate.

Abstract: A layer contains a block copolymer in which a microphase-separated structure of the block copolymer has been induced to be perpendicular to a substrate, the process being difficult to perform by means of heating at atmospheric pressure. A method produces this layer. A method produces a semiconductor device in which a vertically phase-separated block copolymer layer is used. The vertically phase-separated block copolymer layer is formed by heating under a pressure below atmospheric pressure and at a temperature at which induced self-assembly can occur. It is preferable that the vertical phase separation includes a lamellar portion. It is preferable that the lamellar portion includes PMMA. It is preferable that the heating temperature is 290° C. or higher. It is preferable to additionally have a layer, which neutralizes the surface energy of the block copolymer, beneath the block copolymer layer.

Abstract: An additive for a cement slurry for a well that is capable of suppressing the generation of free water and preventing flotation/separation of low-specific-gravity aggregate while securing sufficient cement strength even at a high temperature and a method for producing this additive are disclosed. The additive contains an aqueous dispersion of silica and a layered silicate.

Abstract: An upper layer film-forming composition exhibits good solubility in hydrophobic solvents and can bring about vertical alignment of a block copolymer without dissolution, swelling or the like of a layer containing the block copolymer formed on a substrate. This upper layer film-forming composition is used for phase separation of a layer containing a block copolymer formed on a substrate, and contains: (A) a copolymer containing a unit structure derived from a maleimide structure (a) and a unit structure derived from a styrene structure; and (B) as a solvent, a non-aromatic hydrocarbon compound that is a liquid at normal temperature and pressure.

Abstract: A laminate having a semiconductor substrate, a UV-ray-transmissive support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate. The release layer is a film formed from a releasing agent composition containing a polymer of an ethylenic unsaturated monomer having a tert-butoxycarbonyl group, a photoacid generator, and a solvent.

Abstract: A cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt and a composition solvent including a first organic solvent and a second organic solvent; the first organic solvent is an amide derivative represented by formula (Z) (wherein R0 represents an ethyl group, a propyl group, or an isopropyl group; and each of RA and RB represents a C1 to C4 alkyl group); the second organic solvent is a non-amide organic solvent other than the amide derivative; and the composition has a water content less than 4.0 mass %.

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the resist underlayer film-forming composition. The resist underlayer film-forming composition comprises an organic solvent and the reaction product of (A) a hydantoin-containing compound that has two epoxy groups and (B) a hydantoin-containing compound different from (A). This reaction product is preferably the reaction product of a secondary amino group present in the hydantoin-containing compound (B) and the epoxy group present in the hydantoin-containing compound (A).

Abstract: A composition for forming a resist underlayer film containing a solvent and polymer comprising a unit structure (A) represented by formula (1) and/or formula (2). The composition is capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, the composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films.

Abstract: The present invention is to provide a method for producing a cartilage tissue which comprises a step of providing a substrate for producing cell aggregates provided with a plurality of spots comprising a copolymer containing recurring units derived from monomers represented by the following formulae (I) and (II): [wherein Ua1, Ua, Ra1, Ra2 and Rb are as described in the specification and claims] on a substrate having an ability to suppress adhesion of cells; a step of seeding human cartilage progenitor cells which are positive for PRRX1 protein and derived from pluripotent stem cells on the substrate; a step of producing cell aggregates by culturing the cells; and a step of culturing the aggregates to produce a cartilage tissue.