Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L1 and L2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L1 and that of the alkyl group L2 is 6 or less) in an amount of 80 mass % or more.

Abstract: A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, characterized in that the remover composition contains a solvent but no salt; the solvent includes one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.

Abstract: The invention provides a cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor is formed of a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride.

Abstract: A resist underlayer film forming composition which has high storage stability, has a low film curing start temperature, can cause the generation of a sublimated product in a reduced amount, and enables the formation of a film that is rarely eluted into a photoresist solvent; a method for forming a resist pattern using the resist underlayer film forming composition; and a method for manufacturing a semiconductor device. The resist underlayer film forming composition includes a crosslinkable resin, a crosslinking agent, a crosslinking catalyst represented by formula (I) and a solvent. (A-SO3)?(BH)+[wherein A represents a linear, branched or cyclic saturated or unsaturated aliphatic hydrocarbon group which may be substituted, an aryl group which may be substituted by a group other than a hydroxy group, or a heteroaryl group which may be substituted; and B represents a base having a pKa value of 6.5 to 9.5.

Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

Abstract: A substrate for producing cell aggregates provided with a plurality of spots which comprises a polymer containing a recurring unit derived from a monomer represented by the following formula (I): wherein Ua1, Ua2, Ra1 and Ra2 are as defined herein, on a substrate having an ability to inhibit adhesion of cells, wherein a ratio of a total area of the spots to a surface area of the substrate is 30% or more, a diameter of each spot is 50 to 5,000 ?m, and a distance between the spots is 30 to 1,000 ?m, a method for producing the same, and a method for producing cell aggregates using such a substrate and a method of improving cell utilization efficiency at the time of producing the cell aggregates.

Abstract: A protective film-forming composition excelling in preservation stability and having a favorable masking (protection) function against wet etching solutions when processing a semiconductor substrate, a protective film manufactured by using the composition, a substrate with a resist pattern, and a method for manufacturing a semiconductor device. The protective film-forming composition provides protection against wet etching solutions for semiconductors and contains: a polymer having a unit structure represented by Formula (1-1): Ar represents a benzene ring, a naphthalene ring, or an anthracene ring; R1 represents a hydroxy group, a mercapto group; n1 represents an integer from 0-3; n2 represents 1 or 2; L1 represents a single bond or an alkylene group that has 1-10 carbons; E represents an epoxy group; when n2=1, T1 represents an alkylene group that has 1-10 carbons; and when n2=2, T1 represents a nitrogen atom or an amide bond.

Abstract: A method for producing a coated substrate includes applying a photocurable silicon-containing coating film-forming composition to an uneven substrate; and exposing the photocurable silicon-containing coating film-forming composition to light, wherein the photocurable silicon-containing coating film-forming composition comprises a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane is a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) wherein R1 is a functional group relating to photocrosslinking; R2 is an alkyl group and is bonded to a silicon atom via an Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3.

Abstract: A gas barrier film-forming composition comprising the following components: plate-like particles composed of exfoliated layer substances generated through interlayer exfoliation of layered compound, plate-like particles having average thickness of 0.7 nm to 100 nm, average major-axis length of 100 nm to 100,000 nm, and ratio of (maximum major-axis length/width orthogonal to maximum major-axis length) of 1.0 to 10.0, and containing quaternary ammonium ions each having total carbon atom number of 13 to 45 and one or two C10-20 alkyl groups, and anionic surfactant having ammonium ion, wherein the amount of each of quaternary ammonium ions and anionic surfactant is more than 0% by mass and 3.0% by mass or less relative to mass of plate-like particles, a water-soluble polymer; and an aqueous medium. The gas barrier film-forming composition, wherein layered compound is ilerite. A formed product comprising a base and a gas barrier film disposed on surface of the base.

Abstract: Provided are a composition for forming a coating film, a coating film and a substrate having the coating film, which have excellent compatibility with biological substances, as well as a method for producing the same. A composition for forming a coating film having the ability to inhibit adhesion of biological substances, the composition comprising a copolymer and a solvent, wherein the copolymer is obtained by subjecting a monomer mixture to polymerization, wherein the monomer mixture comprises compounds represented by the following formulae (1), (2), and (3): wherein R1 to R6, n, and m are as defined in the Description and Claims, wherein the compound represented by the formula (3) above is contained in a predetermined amount in the monomer mixture, a coating film obtained from the composition, and a substrate having the coating film as well as a method for producing the same.

Abstract: Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass %, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.

Abstract: Provided is a method for producing a polymer, comprising: a first step for synthesizing a crude polymer by reacting a monomer containing a pyrimidinetrione structure, an imidazolidinedione structure, or a triazinetrione structure, in an organic solvent in the presence of a quaternary phosphonium salt or quaternary ammonium salt; and a second step for precipitating and separating a purified polymer by mixing a poor solvent with the crude polymer-containing solution obtained in the first step.

Abstract: The invention provides a substrate for producing cell aggregates provided with a spot(s) comprising a copolymer containing recurring units derived from monomers represented by the following formulae (I) and (II): wherein Ua1, Ua2, Ra1, Ra2 and Rb are as defined herein, on a substrate having an ability to inhibit adhesion of cells, wherein a completion time of forming cell aggregates after seeding cells is within 20 hours.

Abstract: The present invention provides a thin film forming composition for energy storage device electrodes, said composition containing a conductive carbon material, a dispersant, a solvent and a polymer that has a partial structure represented by formula (P1) in a side chain. (In the formula, L represents —O— or —NH—; R represents an alkylene group having from 1 to 20 carbon atoms; T represents a substituted or unsubstituted amino group, a nitrogen-containing heteroaryl group having from 2 to 20 carbon atoms or a nitrogen-containing aliphatic heterocyclic group having from 2 to 20 carbon atoms; and * represents a bonding hand.

Abstract: When a metal catalyst is used as a catalyst in a catalyst layer of a polymer electrolyte fuel cell, improvement in catalytic activity and improvement in durability of the metal catalyst are intended. The catalyst composition of the present invention comprises a metal catalyst, a carbon material having a nitrogen-containing group on which the metal catalyst is carried, and an ionomer.

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. The composition for forming an EUV resist underlayer film has a basic organic group substituted with a protective group on a side chain of a (meth)acrylic polymer and further includes a solvent, but does not include a polymer other than said (meth)acrylic polymer. The organic group is an acyloxy group that has an amino group substituted with a protective group, or that has a nitrogen-containing heterocycle substituted with a protective group.

Abstract: This invention provides a carbon nanotube dispersion that contains carbon nanotubes, a dispersant, a solvent, and a polymer which has a partial structure represented by formula (P1) on a side chain. (In the formula, L represents —O— or —NH—, R represents an alkylene group having 1-20 carbon atoms, T represents a substituted or unsubstituted amino group, a nitrogen-containing heteroaryl group having 2-20 carbon atoms, or a nitrogen-containing aliphatic heterocyclic group having 2-20 carbon atoms, and * represents a bond.